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公开(公告)号：USD513480S1
公开(公告)日：2006-01-10
申请号：US29199792
申请日：2004-02-20
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公开(公告)号：USD504088S1
公开(公告)日：2005-04-19
申请号：US29199795
申请日：2004-02-20
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3.发明申请METHOD FOR PRODUCING NITRIDE SINGLE CRYSTAL AND AUTOCLAVE FOR USE IN THE METHOD 审中-公开用于生产氮化物单晶和自动化的方法用于该方法公开(公告)号：US20140205840A1
公开(公告)日：2014-07-24
申请号：US14128474
申请日：2011-06-23
申请人： Kensuke Aoki , Kazuo Yoshida , Katsuhito Nakamura , Tsuguo Fukuda
发明人： Kensuke Aoki , Kazuo Yoshida , Katsuhito Nakamura , Tsuguo Fukuda
CPC分类号： C30B7/105 , C01B21/0632 , C30B29/406 , Y10T117/1096 , Y10T428/2982
摘要： There is provided a novel method for producing a nitride single crystal with both a rapid crystal growth rate and high crystal quality, as well as a novel autoclave that can be used in the method. The invention provides a method for producing a Ga-containing nitride single crystal by an ammonothermal method, comprising introducing at least a starting material, an acidic mineralizer and ammonia into an autoclave, and then growing a Ga-containing nitride single crystal under conditions wherein the temperature (T1) at the single crystal growth site is 600° C. to 850° C., the temperature (T1) at the single crystal growth site and the temperature (T2) at the starting material feeder site are in the relationship T1>T2, and the pressure in the autoclave is 40 MPa to 250 MPa, as well as an autoclave that can be used in the method.
摘要翻译： 提供了一种用于生产具有快速晶体生长速率和高晶体质量的氮化物单晶的新颖方法，以及可用于该方法的新型高压釜。 本发明提供了一种通过氨热法制备含Ga氮化物单晶的方法，包括将至少一种起始材料，酸性矿化剂和氨引入高压釜中，然后在其中使含Ga的氮化物单晶生长 单晶生长部位的温度（T1）为600℃〜850℃，单晶生长部位的温度（T1）和原料供给部位的温度（T2）为T1> T2，高压釜中的压力为40MPa〜250MPa，以及可用于该方法的高压釜。
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公开(公告)号：USD681511S1
公开(公告)日：2013-05-07
申请号：US29409498
申请日：2011-12-23
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公开(公告)号：US07528462B2
公开(公告)日：2009-05-05
申请号：US11347236
申请日：2006-02-06
IPC分类号： H01L31/032 , H01L31/0368
CPC分类号： C30B25/183 , C30B29/403 , H01L21/02389 , H01L21/0242 , H01L21/02433 , H01L21/02488 , H01L21/0254 , H01L21/02609 , H01L21/0262 , H01L21/02658 , H01L33/007
摘要： An aluminum nitride single-crystal multi-layered substrate comprising an aluminum nitride single-crystal layer formed by direct reduction nitridation on a single-crystal α-alumina substrate such as a sapphire substrate and an edge-type dislocation layer having a thickness of 10 nm or less in the vicinity of the interface between the both crystals. Threading dislocation is rarely existent in the aluminum nitride single-crystal layer existent on the surface. It is useful as a semiconductor device substrate.
摘要翻译： 一种氮化铝单晶多层基板，其包括通过直接还原氮化在单晶α-氧化铝基板如蓝宝石基板和厚度为10nm的边缘型位错层上形成的氮化铝单晶层 或更小的两个晶体之间的界面附近。 在表面存在的氮化铝单晶层中很少存在穿透位错。 作为半导体器件基板是有用的。
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公开(公告)号：USD570250S1
公开(公告)日：2008-06-03
申请号：US29280289
申请日：2007-05-23
申请人： Katsuhito Nakamura
设计人： Katsuhito Nakamura
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公开(公告)号：US20060175619A1
公开(公告)日：2006-08-10
申请号：US11347236
申请日：2006-02-06
IPC分类号： H01L33/00
CPC分类号： C30B25/183 , C30B29/403 , H01L21/02389 , H01L21/0242 , H01L21/02433 , H01L21/02488 , H01L21/0254 , H01L21/02609 , H01L21/0262 , H01L21/02658 , H01L33/007
摘要： An aluminum nitride single-crystal multi-layered substrate comprising an aluminum nitride single-crystal layer formed by direct reduction nitridation on a single-crystal α-alumina substrate such as a sapphire substrate and an edge-type dislocation layer having a thickness of 10 nm or less in the vicinity of the interface between the both crystals. Threading dislocation is rarely existent in the aluminum nitride single-crystal layer existent on the surface. It is useful as a semiconductor device substrate.
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