摘要:
An image sensor comprising at least one first light emitting element for irradiating an original with light, at least one photoconductive element for sensing the light via the original and at least one second light emitting element for irradiating the photoconductive element with light. The second light emitting element emits light of photoenergy smaller than the optical band gap of the photoconductive element.
摘要:
A matrix circuit has a plurality of blocks each including a plurality of semiconductor unit elements, the semiconductor unit elements of each block being adapted to be impressed with a predetermined voltage at the same time, each unit element becoming active when impressed with the predetermined voltage, and a drive device for impressing the predetermined voltage to the plurality of blocks sequentially. The matrix circuit includes a first selective device for selecting either ground or a desired other than ground voltage, and a second selective device for selecting one of the output of the drive device and the output of the first selective device whereby the output of the second selective device renders active the plurality of unit elements of each block.
摘要:
An image readout apparatus includes a plurality of photoelectric conversion elements, storage devices provided for each of the photoelectric conversion elements for storing each output signal from the photoelectric conversion elements, and discharge switches provided each in parallel with each of the storage devices. In the image readout apparatus, the photoelectric conversion elements and discharge switches are respectively divided into a predetermined number of blocks and the signal transference is performed collectively for each block, thus enabling a high-speed and reliable operation.
摘要:
A photoconductive type sensor which comprises a photoconductive layer having a photosensing region. A pair of main electrodes are provided which are disposed on the photosensing region of the photoconductive layer. The sensor also comprises a gate electrode for applying a bias voltage to the photosensing region. The gate electrode provides a bias of one polarity so as to suppress the generation of a channel in the photosensing region.
摘要:
A photoelectric conversion apparatus has a plurallity of photoelectric conversion elements each providing an output signal to a storage capacitor. A matrix wiring unit is arranged opposite the photoelectric conversion elements so as not to cross the signal lines extending from the capacitors. The matrix wiring unit matrix transfers the signals from the capacitors. A switch array unit includes a first switch unit for sequentially transferring the matrix transferred signals, and a first readout device for reading out, as a voltage signal, the signals transferred by the first switch section. The switch array also includes a second switch unit arranged in correspondence with the first switch unit and operated synchronously therewith. The second switch unit receives signals corresponding to noise. A second readout device reads out, as a voltage signal, the output from the second switch unit. A differential amplifier is included for receiving the outputs from the first and second readout devices and outputs a signal corresponding to a difference therebetween.
摘要:
There is a photoelectric converting apparatus in which (N.times.M) photoelectric converting elements arranged in a one-dimensional array form are connected to N voltage applying electrodes and M signal readout electrodes in a matrix form. In this apparatus, the wiring crossing portions of the matrix connection are provided on the side of the voltage applying electrodes, and the insulation of the wiring crossing portion is formed as the laminated structure by a photoconductive layer and a high resistance layer.
摘要:
A photoelectric conversion device having a photoelectric conversion section and a transistor for transferring or amplification of the photoelectric conversion signal or an accumulating section of a photo carrier. The photoelectric conversion section and the transistor or the accumulating section have common semiconductor layer.
摘要:
There is a photoelectric converting apparatus in which (N.times.M) photoelectric converting elements arranged in a one-dimensional array form are connected to N voltage applying electrodes and M signal readout electrodes in a matrix form. In this apparatus, the wiring crossing portions of the matrix connection are provided on the side of the voltage applying electrodes, and the insulation of the wiring crossing portion is formed as the laminated structure by a photoconductive layer and a high resistance layer.
摘要:
A photoelectric conversion device having a photoelectric conversion section and a transistor for transferring or amplification of the photoelectric conversion signal or an accumulating section of a photo carrier. The photoelectric conversion section and the transistor or the accumulating section have common semiconductor layer.
摘要:
A photoelectric conversion device having a photoelectric conversion section and a transistor for transferring or amplification of the photoelectric conversion signal or an accumulating section of a photo carrier. The photoelectric conversion section and the transistor or the accumulating section have common semiconductor layer.