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    Magnetic memory
    1.
    发明授权
    Magnetic memory 有权
    磁记忆

    公开(公告)号：US08716820B2

    公开(公告)日：2014-05-06

    申请号：US13609230

    申请日：2012-09-10

    申请人： Katsumi Suemitsu ,  Eiji Kariyada

    发明人： Katsumi Suemitsu ,  Eiji Kariyada

    IPC分类号： H01L29/82

    CPC分类号： H01L43/12 ,  G11C11/161 ,  G11C11/1655 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  H01L27/226 ,  H01L43/08

    摘要： A memory includes an underlying layer of a ferromagnetic body, a first nonmagnetic layer on the underlying layer, a data memorizing layer laid on the first nonmagnetic layer and made of a ferromagnetic body having perpendicular magnetic anisotropy, a reference layer coupled through a second nonmagnetic layer with the data memorizing layer, and first and second magnetization fixed layers laid underneath the underlying layer to come into contact with the underlying layer. The data memorizing layer includes a magnetization liberalized region having reversible magnetization, and overlapping with the reference layer, a first magnetization fixed region coupled with an end of the magnetization liberalized region, and having a magnetization direction fixed to +z direction by the first magnetization fixed layer, and a second magnetization fixed region coupled with a different end of the magnetization liberalized region, and having a magnetization direction fixed to −z direction by the second magnetization fixed layer.

    摘要翻译： 存储器包括铁磁体的下层，下层上的第一非磁性层，位于第一非磁性层上并由具有垂直磁各向异性的铁磁体构成的数据存储层，通过第二非磁性层耦合的参考层 数据存储层，第一和第二磁化固定层铺设在下层之下，与下层相接触。 数据存储层包括具有可逆磁化并与参考层重叠的磁化自由化区域，与磁化自由化区域的一端耦合的第一磁化固定区域，并且具有通过第一磁化固定的磁化方向固定到+ z方向 以及与磁化自由化区域的不同端部耦合的第二磁化固定区域，并且具有由第二磁化固定层固定在-z方向的磁化方向。

    MAGNETIC MEMORY
    4.
    发明申请
    MAGNETIC MEMORY 有权
    磁记忆

    公开(公告)号：US20130075846A1

    公开(公告)日：2013-03-28

    申请号：US13609230

    申请日：2012-09-10

    申请人： Katsumi SUEMITSU ,  Eiji Kariyada

    发明人： Katsumi SUEMITSU ,  Eiji Kariyada

    IPC分类号： H01L29/82 ,  H01L21/8246

    CPC分类号： H01L43/12 ,  G11C11/161 ,  G11C11/1655 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  H01L27/226 ,  H01L43/08

    摘要： A memory includes an underlying layer of a ferromagnetic body, a first nonmagnetic layer on the underlying layer, a data memorizing layer laid on the first nonmagnetic layer and made of a ferromagnetic body having perpendicular magnetic anisotropy, a reference layer coupled through a second nonmagnetic layer with the data memorizing layer, and first and second magnetization fixed layers laid underneath the underlying layer to come into contact with the underlying layer. The data memorizing layer includes a magnetization liberalized region having reversible magnetization, and overlapping with the reference layer, a first magnetization fixed region coupled with an end of the magnetization liberalized region, and having a magnetization direction fixed to +z direction by the first magnetization fixed layer, and a second magnetization fixed region coupled with a different end of the magnetization liberalized region, and having a magnetization direction fixed to −z direction by the second magnetization fixed layer.

    摘要翻译： 存储器包括铁磁体的下层，下层上的第一非磁性层，位于第一非磁性层上并由具有垂直磁各向异性的铁磁体构成的数据存储层，通过第二非磁性层耦合的参考层 数据存储层，第一和第二磁化固定层铺设在下层之下，与下层相接触。 数据存储层包括具有可逆磁化并与参考层重叠的磁化自由化区域，与磁化自由化区域的端部耦合的第一磁化固定区域，并且具有通过第一磁化固定的磁化方向固定到+ z方向 以及与磁化自由化区域的不同端部耦合的第二磁化固定区域，并且具有由第二磁化固定层固定在-z方向的磁化方向。

    Optical information recording medium and method of manufacturing the same
    5.
    发明授权
    Optical information recording medium and method of manufacturing the same 失效
    光信息记录介质及其制造方法

    公开(公告)号：US08524347B2

    公开(公告)日：2013-09-03

    申请号：US13125694

    申请日：2009-08-18

    申请人： Eiji Kariyada

    发明人： Eiji Kariyada

    IPC分类号： G11B7/24

    CPC分类号： G11B7/263 ,  G11B7/24038 ,  G11B7/256

    摘要： Provided is a manufacturing method of an optical information storage medium irradiated with laser beams to optically record or reproduce information. A method of manufacturing an optical information storage medium according to the present invention includes forming asperity patterns for guiding laser beams on both sides of a second substrate 12, forming information recording layers 41 and 42 in the asperity patterns, bonding a first substrate 11 to a surface where one information storage layer 41 is formed in the second substrate 12 with an ultraviolet curable resin 22 formed therebetween, and bonding a third substrate 13 to a surface where another information storage layer 42 is formed in the second substrate 12 with an ultraviolet curable resin 22 formed therebetween.

    摘要翻译： 提供了用激光束照射光学记录或再现信息的光学信息存储介质的制造方法。 根据本发明的光学信息存储介质的制造方法包括形成用于在第二基板12的两侧引导激光束的凹凸图案，以凹凸图案形成信息记录层41和42，将第一基板11接合到 在第二基板12中形成有一个信息存储层41的表面，其间形成有紫外线固化树脂22，并且用第二基板12将第三基板13接合到第二基板12中的另一个信息存储层42的表面， 22。

    Optical information recording medium
    6.
    发明授权
    Optical information recording medium 有权
    光信息记录介质

    公开(公告)号：US06875488B2

    公开(公告)日：2005-04-05

    申请号：US10408441

    申请日：2003-04-08

    申请人： Tatsunori Ide ,  Eiji Kariyada ,  Shuichi Ohkubo

    发明人： Tatsunori Ide ,  Eiji Kariyada ,  Shuichi Ohkubo

    IPC分类号： G11B7/258 ,  B32B3/02 ,  C23C14/18 ,  G11B7/24 ,  G11B7/243

    CPC分类号： G11B7/258 ,  C23C14/185 ,  G11B7/2403 ,  G11B7/24038 ,  G11B7/24062 ,  G11B7/243 ,  G11B7/2542 ,  Y10T428/21

    摘要： An optical information recording medium is provided that records and reproduces information by means of laser beams irradiated from the side of the light transmission layer. The optical information recording medium provides a large capacity and a high degree of reliability and is inexpensive. At least a reflective film and a light transmission layer are formed, in the presented order, on the information recording surface of the support substrate. Information is recorded and/or reproduced by using the laser beam irradiated from the side of the light transmission layer. The reflective film, which is made of an alloy containing Ni and Cr as main components, has a thickness of 20 nm or more to 80 nm or less.

    摘要翻译： 提供一种光学信息记录介质，其通过从光透射层侧照射的激光束记录和再现信息。 光信息记录介质提供大容量和高可靠性并且便宜。 在所述支撑基板的信息记录表面上，以所述顺序形成至少一反射膜和透光层。 通过使用从光透射层侧照射的激光束来记录和/或再现信息。 由含有Ni和Cr作为主要成分的合金制成的反射膜的厚度为20nm以上至80nm以下。

    Magnetic memory and manufacturing method thereof
    7.
    发明授权
    Magnetic memory and manufacturing method thereof 有权
    磁记忆及其制造方法

    公开(公告)号：US08481339B2

    公开(公告)日：2013-07-09

    申请号：US13360599

    申请日：2012-01-27

    申请人： Kiyokazu Nagahara ,  Eiji Kariyada

    发明人： Kiyokazu Nagahara ,  Eiji Kariyada

    IPC分类号： H01L21/00

    CPC分类号： H01L27/228 ,  H01L43/12

    摘要： A magnetic memory has a magnetic recording layer, a reference layer connected via a non-magnetic layer to the magnetic recording layer, first and second magnetization pinning layers disposed below the magnetic recording layer. The magnetic recording layer and the reference layer have a perpendicular magnetic anisotropy. The magnetic recording layer has a magnetization reversal region having a reversible magnetization and overlapping the difference layer, a first magnetization pinned region connected to a first boundary of the magnetization reversal region with the direction of the magnetization being fixed in a first direction, and a second magnetization pinned region connected to a second boundary of the magnetization reversal region with the direction of magnetization being fixed in a second direction anti-parallel to the first direction. The first and the second magnetization pinning layers fix the magnetization of the first and the second magnetization pinned regions.

    摘要翻译： 磁存储器具有磁记录层，通过非磁性层连接到磁记录层的参考层，设置在磁记录层下方的第一和第二磁化锁定层。 磁记录层和参考层具有垂直的磁各向异性。 磁记录层具有具有可逆磁化的磁化反转区域，与差分层重叠，第一磁化固定区域与磁化反转区域的第一边界连接，磁化方向固定在第一方向，第二磁化固定区域 磁化钉扎区域连接到磁化反转区域的第二边界，其中磁化方向在与第一方向反平行的第二方向上被固定。 第一和第二磁化钉扎层固定第一和第二磁化固定区域的磁化。

    Optical information recording medium suppressing sulfuration of silver
    8.
    发明申请
    Optical information recording medium suppressing sulfuration of silver 审中-公开
    光学信息记录介质抑制银的硫化

    公开(公告)号：US20070231529A1

    公开(公告)日：2007-10-04

    申请号：US11723829

    申请日：2007-03-22

    申请人： Eiji Kariyada ,  Shuichi Ohkubo

    发明人： Eiji Kariyada ,  Shuichi Ohkubo

    IPC分类号： B32B3/02

    CPC分类号： G11B7/257 ,  G11B7/24038 ,  G11B7/243 ,  G11B7/2534 ,  G11B7/2578 ,  G11B7/259 ,  G11B2007/25706 ,  G11B2007/25708 ,  G11B2007/2571 ,  G11B2007/25715

    摘要： A phase-change optical disk includes a recording film, a reflection film and a dielectric film including oxide of at least one element selected from a first group consisting of niobium and zinc as the principal ingredient thereof and oxide of at least one element selected from a second group consisting of aluminum, tantalum, silicon, cerium and hafnium. The composition ratio of the oxide of the at least one element selected from the second group in the dielectric film is between 10 mol % and 45 mol %. The oxide film prevents sulfuration of the recording film including Ag.

    摘要翻译： 相变光盘包括记录膜，反射膜和包含选自由铌和锌组成的第一组中的至少一种元素作为其主要成分的氧化物的电介质膜和选自以下的至少一种元素的氧化物： 第二组由铝，钽，硅，铈和铪组成。 选自电介质膜中的第二组的至少一种元素的氧化物的组成比为10摩尔％〜45摩尔％。 氧化物膜防止包含Ag的记录膜的硫化。

    Optical information recording medium
    10.
    发明申请
    Optical information recording medium 审中-公开
    光信息记录介质

    公开(公告)号：US20070087155A1

    公开(公告)日：2007-04-19

    申请号：US11549348

    申请日：2006-10-13

    申请人： Eiji Kariyada ,  Shuichi Ohkubo

    发明人： Eiji Kariyada ,  Shuichi Ohkubo

    IPC分类号： B32B3/02

    CPC分类号： G11B7/24038 ,  G11B7/252 ,  G11B7/259 ,  G11B2007/2571 ,  G11B2007/25713

    摘要： An optical disc includes a first information layer and a second information layer, with an optical separation layer between them. The first information layer, provided near the side of the laser beam incident surface, includes at least a first dielectric layer, a recording layer, a second dielectric layer, a metallic translucent layer and a transmittance adjustment layer, laminated in this order. The first dielectric layer includes sulfide, but the second dielectric layer does not include sulfide. The refractive index of the second dielectric layer is same as or larger than that of the first dielectric layer.

    摘要翻译： 光盘包括第一信息层和第二信息层，在它们之间具有光学分离层。 设置在激光束入射表面附近的第一信息层至少包括第一电介质层，记录层，第二电介质层，金属半透明层和透射率调整层。 第一电介质层包括硫化物，但第二电介质层不包括硫化物。 第二电介质层的折射率与第一电介质层的折射率相同或者更大。