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    MAGNETIC MEMORY
    1.
    发明申请
    MAGNETIC MEMORY 有权
    磁记忆

    公开(公告)号：US20130075846A1

    公开(公告)日：2013-03-28

    申请号：US13609230

    申请日：2012-09-10

    申请人： Katsumi SUEMITSU ,  Eiji Kariyada

    发明人： Katsumi SUEMITSU ,  Eiji Kariyada

    IPC分类号： H01L29/82 ,  H01L21/8246

    CPC分类号： H01L43/12 ,  G11C11/161 ,  G11C11/1655 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  H01L27/226 ,  H01L43/08

    摘要： A memory includes an underlying layer of a ferromagnetic body, a first nonmagnetic layer on the underlying layer, a data memorizing layer laid on the first nonmagnetic layer and made of a ferromagnetic body having perpendicular magnetic anisotropy, a reference layer coupled through a second nonmagnetic layer with the data memorizing layer, and first and second magnetization fixed layers laid underneath the underlying layer to come into contact with the underlying layer. The data memorizing layer includes a magnetization liberalized region having reversible magnetization, and overlapping with the reference layer, a first magnetization fixed region coupled with an end of the magnetization liberalized region, and having a magnetization direction fixed to +z direction by the first magnetization fixed layer, and a second magnetization fixed region coupled with a different end of the magnetization liberalized region, and having a magnetization direction fixed to −z direction by the second magnetization fixed layer.

    摘要翻译： 存储器包括铁磁体的下层，下层上的第一非磁性层，位于第一非磁性层上并由具有垂直磁各向异性的铁磁体构成的数据存储层，通过第二非磁性层耦合的参考层 数据存储层，第一和第二磁化固定层铺设在下层之下，与下层相接触。 数据存储层包括具有可逆磁化并与参考层重叠的磁化自由化区域，与磁化自由化区域的端部耦合的第一磁化固定区域，并且具有通过第一磁化固定的磁化方向固定到+ z方向 以及与磁化自由化区域的不同端部耦合的第二磁化固定区域，并且具有由第二磁化固定层固定在-z方向的磁化方向。

    Magnetic memory and manufacturing method for the same
    2.
    发明授权
    Magnetic memory and manufacturing method for the same 有权
    磁记忆及其制造方法相同

    公开(公告)号：US07582923B2

    公开(公告)日：2009-09-01

    申请号：US11667834

    申请日：2005-11-16

    申请人： Yoshiyuki Fukumoto ,  Tetsuhiro Suzuki ,  Katsumi Suemitsu

    发明人： Yoshiyuki Fukumoto ,  Tetsuhiro Suzuki ,  Katsumi Suemitsu

    IPC分类号： H01L27/115

    CPC分类号： H01L27/222 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  H01L43/08

    摘要： The present invention to provide a new technique to reduce a variation in switching field of a magnetization free layer in a magnetic memory. The magnetic memory according to the present invention includes a magnetization free layer including a ferromagnetic layer having a shape magnetic anisotropy in a first direction and a magnetic strain constant is positive; and a stress inducing structure configured to apply a tensile stress to said magnetization free layer in a same direction as the first direction.

    摘要翻译： 本发明提供一种减小磁存储器中的无磁化层的开关场变化的新技术。 根据本发明的磁存储器包括具有在第一方向上具有形状磁各向异性的铁磁层和磁应变常数为正的铁磁层的无磁化层; 以及构造成在与第一方向相同的方向上对所述无磁化层施加拉伸应力的应力诱导结构。

    MTJ FILM AND METHOD FOR MANUFACTURING THE SAME
    5.
    发明申请
    MTJ FILM AND METHOD FOR MANUFACTURING THE SAME 审中-公开
    MTJ薄膜及其制造方法

    公开(公告)号：US20120199470A1

    公开(公告)日：2012-08-09

    申请号：US13364740

    申请日：2012-02-02

    申请人： Kaoru MORI ,  Eiji KARIYADA ,  Katsumi SUEMITSU ,  Norikazu OHSHIMA

    发明人： Kaoru MORI ,  Eiji KARIYADA ,  Katsumi SUEMITSU ,  Norikazu OHSHIMA

    IPC分类号： C23C14/34 ,  C23C14/06

    CPC分类号： H01L43/12 ,  B82Y40/00 ,  G11C11/161 ,  H01F10/3236 ,  H01F10/3254 ,  H01F10/3286 ,  H01F41/307 ,  H01L43/08

    摘要： A method for manufacturing an MTJ film includes forming a first ferromagnetic layer; forming a tunnel barrier layer over the first ferromagnetic layer; and forming a second ferromagnetic layer over the tunnel barrier layer. The first ferromagnetic layer is a Co/Ni stacked film having perpendicular magnetic anisotropy. The step for forming a tunnel barrier layer includes repeating unit film formation treatment n times (n is an integer of 2 or more). The unit film formation treatment includes the steps of: depositing an Mg film by a sputtering method; and oxidizing the deposited Mg film. A film thickness of the deposited Mg film in the first unit film formation treatment is 0.3 nm or more and 0.5 nm or less. A film thickness of the deposited Mg film in the second unit film formation treatment or later is 0.1 nm or more and 0.45 nm or less.

    摘要翻译： 制造MTJ薄膜的方法包括：形成第一铁磁层; 在所述第一铁磁层上形成隧道势垒层; 以及在所述隧道势垒层上形成第二铁磁层。 第一铁磁层是具有垂直磁各向异性的Co / Ni叠层膜。 形成隧道势垒层的步骤包括重复单元成膜处理n次（n为2以上的整数）。 单元成膜处理包括以下步骤：通过溅射法沉积Mg膜; 并氧化沉积的Mg膜。 第一单位成膜处理中的沉积的Mg膜的膜厚为0.3nm以上且0.5nm以下。 在第二单元成膜处理中或之后的沉积的Mg膜的膜厚度为0.1nm以上且0.45nm以下。

    Magnetic memory and method of manufacturing the memory
    6.
    发明申请
    Magnetic memory and method of manufacturing the memory 审中-公开
    磁存储器和制造存储器的方法

    公开(公告)号：US20060261425A1

    公开(公告)日：2006-11-23

    申请号：US10529851

    申请日：2003-09-19

    申请人： Katsumi Suemitsu ,  Kuniko Kikuta

    发明人： Katsumi Suemitsu ,  Kuniko Kikuta

    IPC分类号： H01L43/00

    CPC分类号： H01L43/12 ,  H01L43/08

    摘要： A magnetic memory includes a substrate, a lower portion structure of a magnetic element, an upper portion structure of the magnetic element, and a sidewall insulating film. The lower portion structure of the magnetic element is a portion of the magnetic element provided on the upside of the substrate. The upper portion structure of the magnetic element is a remaining portion of the magnetic element provided on the upside of the lower portion structure of the magnetic element. The sidewall insulating film is provided to surround the upper portion structure of the magnetic element and is formed of an insulating material. That is, the lower portion structure of the magnetic element is formed from one layer or a plurality of layers on a side close to the substrate, among a plurality of laminated films of the magnetic element provided on the upside of the substrate. The upper portion structure of the magnetic element is formed from layers other than the lower portion structure of the magnetic element among the plurality of laminated films of the magnetic element. Also, the side of the upper portion structure of the magnetic element is electrically insulated from other portions by the sidewall insulating film. That is, it is possible to avoid a short-circuit.

    摘要翻译： 磁存储器包括基板，磁性元件的下部结构，磁性元件的上部结构以及侧壁绝缘膜。 磁性元件的下部结构是设置在基板的上侧的磁性元件的一部分。 磁性元件的上部结构是设置在磁性元件的下部结构的上侧的磁性元件的剩余部分。 侧壁绝缘膜设置为围绕磁性元件的上部结构，并且由绝缘材料形成。 也就是说，磁性元件的下部结构在设置在基板的上侧的磁性元件的多个层压膜之中由靠近基板的一侧的一层或多层形成。 磁性元件的上部结构由磁性元件的多个层合膜之中的除了磁性元件的下部结构之外的层形成。 此外，磁性元件的上部结构的一侧通过侧壁绝缘膜与其它部分电绝缘。 也就是说，可以避免短路。

    Magnetic memory
    7.
    发明授权
    Magnetic memory 有权
    磁记忆

    公开(公告)号：US08716820B2

    公开(公告)日：2014-05-06

    申请号：US13609230

    申请日：2012-09-10

    申请人： Katsumi Suemitsu ,  Eiji Kariyada

    发明人： Katsumi Suemitsu ,  Eiji Kariyada

    IPC分类号： H01L29/82

    CPC分类号： H01L43/12 ,  G11C11/161 ,  G11C11/1655 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  H01L27/226 ,  H01L43/08

    摘要： A memory includes an underlying layer of a ferromagnetic body, a first nonmagnetic layer on the underlying layer, a data memorizing layer laid on the first nonmagnetic layer and made of a ferromagnetic body having perpendicular magnetic anisotropy, a reference layer coupled through a second nonmagnetic layer with the data memorizing layer, and first and second magnetization fixed layers laid underneath the underlying layer to come into contact with the underlying layer. The data memorizing layer includes a magnetization liberalized region having reversible magnetization, and overlapping with the reference layer, a first magnetization fixed region coupled with an end of the magnetization liberalized region, and having a magnetization direction fixed to +z direction by the first magnetization fixed layer, and a second magnetization fixed region coupled with a different end of the magnetization liberalized region, and having a magnetization direction fixed to −z direction by the second magnetization fixed layer.

    摘要翻译： 存储器包括铁磁体的下层，下层上的第一非磁性层，位于第一非磁性层上并由具有垂直磁各向异性的铁磁体构成的数据存储层，通过第二非磁性层耦合的参考层 数据存储层，第一和第二磁化固定层铺设在下层之下，与下层相接触。 数据存储层包括具有可逆磁化并与参考层重叠的磁化自由化区域，与磁化自由化区域的一端耦合的第一磁化固定区域，并且具有通过第一磁化固定的磁化方向固定到+ z方向 以及与磁化自由化区域的不同端部耦合的第二磁化固定区域，并且具有由第二磁化固定层固定在-z方向的磁化方向。

    Magnetic Memory and Manufacturing Method For the Same
    8.
    发明申请
    Magnetic Memory and Manufacturing Method For the Same 有权
    磁记忆和制造方法相同

    公开(公告)号：US20080164502A1

    公开(公告)日：2008-07-10

    申请号：US11667834

    申请日：2005-11-16

    申请人： Yoshiyuki Fukumoto ,  Tetsuhiro Suzuki ,  Katsumi Suemitsu

    发明人： Yoshiyuki Fukumoto ,  Tetsuhiro Suzuki ,  Katsumi Suemitsu

    IPC分类号： H01L27/00

    CPC分类号： H01L27/222 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  H01L43/08

    摘要： The present invention to provide a new technique to reduce a variation in switching field of a magnetization free layer in a magnetic memory. The magnetic memory according to the present invention includes a magnetization free layer including a ferromagnetic layer having a shape magnetic anisotropy in a first direction and a magnetic strain constant is positive; and a stress inducing structure configured to apply a tensile stress to said magnetization free layer in a same direction as the first direction.

    摘要翻译： 本发明提供一种减小磁存储器中的无磁化层的开关场变化的新技术。 根据本发明的磁存储器包括具有在第一方向上具有形状磁各向异性的铁磁层和磁应变常数为正的铁磁层的无磁化层; 以及构造成在与第一方向相同的方向上对所述无磁化层施加拉伸应力的应力诱导结构。

    Magnetic memory and method of operation thereof
    9.
    发明申请
    Magnetic memory and method of operation thereof 审中-公开
    磁存储器及其操作方法

    公开(公告)号：US20050064157A1

    公开(公告)日：2005-03-24

    申请号：US10979428

    申请日：2004-11-02

    申请人： Takeshi Okazawa ,  Katsumi Suemitsu

    发明人： Takeshi Okazawa ,  Katsumi Suemitsu

    IPC分类号： G11C11/14 ,  G11C11/15 ,  G11C11/56 ,  H01F10/32 ,  H01L21/8246 ,  H01L27/105 ,  H01L43/08 ,  B32B7/06

    CPC分类号： G11C11/5607 ,  G11C11/15 ,  G11C11/161 ,  Y10T428/2486

    摘要： A magnetic memory according to the present invention comprises: a single magnetic memory cell having at least first to third magnetic layers, a first tunnel insulating layer between the first and second magnetic layers and a second tunnel insulating layer between the second and third magnetic layers. The resistance between the first and third magnetic layers when magnetization of the first and second magnetic layers are in opposite directions is different from the resistance between the second and third magnetic layers when magnetization of the second and third magnetic layers are in opposite directions. Multiple data are therefore stored into the memory cell.

    摘要翻译： 根据本发明的磁存储器包括：具有至少第一至第三磁性层的单个磁存储单元，在第一和第二磁性层之间的第一隧道绝缘层以及第二和第三磁性层之间的第二隧道绝缘层。 当第一和第二磁性层的磁化方向处于相反方向时，第一和第三磁性层之间的电阻不同于当第二和第三磁性层的磁化方向相反时第二和第三磁性层之间的电阻。 因此，多个数据被存储到存储单元中。

    Magnetic memory and method of operation thereof
    10.
    发明授权
    Magnetic memory and method of operation thereof 失效
    磁存储器及其操作方法

    公开(公告)号：US06812537B2

    公开(公告)日：2004-11-02

    申请号：US10141602

    申请日：2002-05-08

    申请人： Takeshi Okazawa ,  Katsumi Suemitsu

    发明人： Takeshi Okazawa ,  Katsumi Suemitsu

    IPC分类号： H01L2982

    CPC分类号： G11C11/5607 ,  G11C11/15 ,  Y10T428/2486

    摘要： A magnetic memory according to the present invention comprises: a single magnetic memory cell having at least first to third magnetic layers, a first tunnel insulating layer between the first and second magnetic layers and a second tunnel insulating layer between the second and third magnetic layers. The resistance between the first and third magnetic layers when magnetization of the first and second magnetic layers are in opposite directions is different from the resistance between the second and third magnetic layers when magnetization of the second and third magnetic layers are in opposite directions. Multiple data are therefore stored into the memory cell.

    摘要翻译： 根据本发明的磁存储器包括：具有至少第一至第三磁性层的单个磁存储单元，在第一和第二磁性层之间的第一隧道绝缘层以及第二和第三磁性层之间的第二隧道绝缘层。 当第一和第二磁性层的磁化方向处于相反方向时，第一和第三磁性层之间的电阻不同于当第二和第三磁性层的磁化方向相反时第二和第三磁性层之间的电阻。 因此，多个数据被存储到存储单元中。