利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

5 条记录 (耗时 0.013 秒)

    Method for forming ohmic contact
    1.
    发明授权
    Method for forming ohmic contact 失效
    形成欧姆接触的方法

    公开(公告)号：US6001720A

    公开(公告)日：1999-12-14

    申请号：US726862

    申请日：1996-10-04

    申请人： Katsunari Hanaoka ,  Ikuo Shiota

    发明人： Katsunari Hanaoka ,  Ikuo Shiota

    IPC分类号： H01L21/265 ,  H01L21/285 ,  H01L21/28 ,  H01L21/31

    CPC分类号： H01L21/28512 ,  H01L21/2652 ,  Y10S438/95

    摘要： A method for forming ohmic contact has the steps of a) a process for forming an insulating film having a predetermined thickness on a diffusive layer formed on a semiconductor substrate; b) a process for forming a mask on the insulating film; the mask having a small selective ratio with respect to the insulating film and having an opening portion for a contact hole; c) a process for implanting ions into the diffusive layer through the opening portion; d) a process for taking heat treatment to electrically activate the implanted ions; e) a process for completely removing the mask and forming the contact hole by simultaneously etching the mask and the insulating film exposed through the opening portion of the mask; and f) a process for making an electrode come in ohmic contact with the semiconductor substrate exposed from the formed contact hole. In this method, the ohmic contact is formed with high accuracy with respect to a fine contact hole.

    摘要翻译： 一种形成欧姆接触的方法具有以下步骤：a）在半导体衬底上形成的扩散层上形成具有预定厚度的绝缘膜的工艺; b）在绝缘膜上形成掩模的工艺; 所述掩模相对于所述绝缘膜具有小的选择比并且具有用于接触孔的开口部分; c）通过所述开口部分将离子注入到扩散层中的方法; d）进行热处理以电激活注入离子的方法; e）通过同时蚀刻掩模和通过掩模的开口部分暴露的绝缘膜来完全去除掩模并形成接触孔的工艺; 以及f）用于使电极与形成的接触孔露出的半导体衬底欧姆接触的工艺。 在该方法中，相对于微细接触孔，高精度地形成欧姆接触。

    Oxynitride film and its manufacturing method
    4.
    发明授权
    Oxynitride film and its manufacturing method 失效
    氧氮化膜及其制造方法

    公开(公告)号：US4436770A

    公开(公告)日：1984-03-13

    申请号：US351619

    申请日：1982-02-24

    申请人： Jun-ichi Nishizawa ,  Ikuo Shiota

    发明人： Jun-ichi Nishizawa ,  Ikuo Shiota

    IPC分类号： C23C14/06 ,  C23C16/30 ,  H01L21/28 ,  H01L21/314 ,  H01L29/51 ,  H01L29/94 ,  B05D5/00 ,  C23C11/00 ,  C23C15/00

    CPC分类号： H01L29/513 ,  C23C14/0676 ,  C23C16/308 ,  H01L21/28264 ,  H01L21/3145 ,  H01L29/517 ,  H01L29/518 ,  H01L29/94 ,  Y10S438/958 ,  Y10T428/31678

    摘要： The oxynitride film according to the present invention contains Ga and/or Al and has O/N ratio of at least 0.15. This film is obtained by relying on, for example, chemical vapor deposition technique. The O/N ratio in the film may be varied by, for example, varying the distance between the substrate and the substance-supply source, or by varying the proportion of an oxidizing gas contained in a carrier gas. This film is used either as a surface passivation film of III-V compound semiconductors such as GaAs, or as an insulating film for active surface portions of IG-FET, or as an optical anti-reflective film.

    摘要翻译： 根据本发明的氧氮化物膜含有Ga和/或Al，并且O / N比至少为0.15。 通过依靠例如化学气相沉积技术获得该膜。 膜中的O / N比可以通过例如改变衬底和物质供应源之间的距离，或者改变载气中所含的氧化气体的比例来改变。 该膜既可用作III-V化合物半导体如GaAs的表面钝化膜，也可用作IG-FET的有源表面部分的绝缘膜或光学抗反射膜。

    Oxynitride film and its manufacturing method
    5.
    发明授权
    Oxynitride film and its manufacturing method 失效
    氧氮化膜及其制造方法

    公开(公告)号：US4331737A

    公开(公告)日：1982-05-25

    申请号：US215442

    申请日：1980-12-11

    申请人： Jun-ichi Nishizawa ,  Ikuo Shiota

    发明人： Jun-ichi Nishizawa ,  Ikuo Shiota

    IPC分类号： C23C14/06 ,  C23C16/30 ,  H01L21/28 ,  H01L21/314 ,  H01L29/51 ,  H01L29/94 ,  B32B15/04 ,  H01L3/00

    CPC分类号： H01L29/513 ,  C23C14/0676 ,  C23C16/308 ,  H01L21/28264 ,  H01L21/3145 ,  H01L29/517 ,  H01L29/518 ,  H01L29/94 ,  Y10S438/958 ,  Y10T428/31678

    摘要： The oxynitride film according to the present invention contains Ga and/or Al and has O/N ratio of at least 0.15. This film is obtained by relying on, for example, chemical vapor deposition technique. The O/N ratio in the film may be varied by, for example, varying the distance between the substrate and the substance-supply source, or by varying the proportion of an oxidizing gas contained in a carrier gas. This film is used either as a surface passivation film of III-V compound semiconductors such as GaAs, or as an insulating film for active surface portions of IG-FET, or as an optical anti-reflective film.

    摘要翻译： 根据本发明的氧氮化物膜含有Ga和/或Al，并且O / N比至少为0.15。 通过依靠例如化学气相沉积技术获得该膜。 膜中的O / N比可以通过例如改变衬底和物质供应源之间的距离，或者改变载气中所含的氧化气体的比例来改变。 该膜既可用作III-V化合物半导体如GaAs的表面钝化膜，也可用作IG-FET的有源表面部分的绝缘膜或光学抗反射膜。