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公开(公告)号:US09153297B2
公开(公告)日:2015-10-06
申请号:US12061812
申请日:2008-04-03
IPC分类号: H03K3/00 , G11C7/10 , G11C11/4093
CPC分类号: G11C7/1051 , G11C7/1057 , G11C7/1078 , G11C7/1084 , G11C11/4093
摘要: An integrated circuit comprising at least one signal path which is adapted to route at least one signal from an origin to a target block, said signal path comprising at least an adjustable driver circuit comprising an input and an output, which is adapted to receive an electric signal having a first signal power as an input signal and which is adapted to provide an electric signal having a second signal power as an output signal is provided. Furthermore, the integrated circuit comprises at least one interconnect having an ohmic resistance and an electric capacity and being adapted to route said electric signal having a second signal power to said target block. Furthermore, a method for manufacturing such an integrated circuit is provided.
摘要翻译: 一种集成电路,包括至少一个信号路径,其适于将至少一个信号从原点路由到目标块,所述信号路径至少包括可调节驱动器电路,其包括输入和输出,其适于接收电 提供具有第一信号功率作为输入信号并且适于提供具有第二信号功率的电信号作为输出信号的信号。 此外,集成电路包括具有欧姆电阻和电容的至少一个互连,并且适于将具有第二信号功率的所述电信号路由到所述目标块。 此外,提供了一种用于制造这种集成电路的方法。
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公开(公告)号:US08180500B2
公开(公告)日:2012-05-15
申请号:US12512019
申请日:2009-07-29
申请人: Wen-Ming Lee
发明人: Wen-Ming Lee
IPC分类号: G05B15/00 , G05B11/01 , G05D23/00 , G06F13/00 , G06F13/28 , G11C7/04 , G11C7/00 , G11C5/14 , G11C11/34
CPC分类号: G01K7/24 , G01K1/02 , G01K7/425 , G01K2215/00 , G06F1/206 , G06F1/3203 , G11C7/04 , G11C11/406 , G11C11/40615 , G11C11/40626 , Y02D10/16
摘要: A temperature sensing system, which comprises: a temperature analyzing circuit, for sensing temperature and generating an analyzing result in response to the sensed temperature; and a control unit, for controlling a temperature sensing time interval; wherein the control unit continuously changes the temperature sensing time interval according to a predetermined temperature range in response to the sensed temperature.
摘要翻译: 一种温度感测系统,包括:温度分析电路,用于感测温度并响应于所感测的温度产生分析结果; 以及控制单元,用于控制温度感测时间间隔; 其中所述控制单元响应于所感测的温度,根据预定温度范围连续地改变温度感测时间间隔。
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公开(公告)号:US09019750B2
公开(公告)日:2015-04-28
申请号:US13684583
申请日:2012-11-26
申请人: Wen-Ming Lee , Chuan-Jen Chang
发明人: Wen-Ming Lee , Chuan-Jen Chang
IPC分类号: G11C11/24 , G11C5/06 , G11C11/4097
CPC分类号: G11C11/24 , G11C5/063 , G11C11/4097
摘要: The present invention provides a dynamic random access memory apparatus includes a first chip and a second chip. The first chip includes a plurality of memory cells and a plurality of through-silicon vias (TSVs). The plurality of memory cells are arranged in an array. First terminals of the TSVs are respectively coupled to the memory cells. The first chip and the second chip are overlapped, the second chip includes a plurality storage capacitors. Second terminals of the TSVs are respectively coupled to the storage capacitors storage capacitors.
摘要翻译: 本发明提供一种包括第一芯片和第二芯片的动态随机存取存储装置。 第一芯片包括多个存储单元和多个通硅通孔(TSV)。 多个存储单元被布置成阵列。 TSV的第一端分别耦合到存储单元。 第一芯片和第二芯片重叠,第二芯片包括多个存储电容器。 TSV的第二端子分别耦合到存储电容器存储电容器。
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公开(公告)号:US20140146597A1
公开(公告)日:2014-05-29
申请号:US13684583
申请日:2012-11-26
申请人: Wen-Ming Lee , Chuan-Jen Chang
发明人: Wen-Ming Lee , Chuan-Jen Chang
IPC分类号: G11C11/24
CPC分类号: G11C11/24 , G11C5/063 , G11C11/4097
摘要: The present invention provides a dynamic random access memory apparatus includes a first chip and a second chip. The first chip includes a plurality of memory cells and a plurality of through-silicon vias (TSVs). The plurality of memory cells are arranged in an array. First terminals of the TSVs are respectively coupled to the memory cells. The first chip and the second chip are overlapped, the second chip includes a plurality storage capacitors. Second terminals of the TSVs are respectively coupled to the storage capacitors storage capacitors.
摘要翻译: 本发明提供一种包括第一芯片和第二芯片的动态随机存取存储装置。 第一芯片包括多个存储单元和多个通硅通孔(TSV)。 多个存储单元被布置成阵列。 TSV的第一端分别耦合到存储单元。 第一芯片和第二芯片重叠,第二芯片包括多个存储电容器。 TSV的第二端子分别耦合到存储电容器存储电容器。
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公开(公告)号:US20110029272A1
公开(公告)日:2011-02-03
申请号:US12512019
申请日:2009-07-29
申请人: Wen-Ming Lee
发明人: Wen-Ming Lee
CPC分类号: G01K7/24 , G01K1/02 , G01K7/425 , G01K2215/00 , G06F1/206 , G06F1/3203 , G11C7/04 , G11C11/406 , G11C11/40615 , G11C11/40626 , Y02D10/16
摘要: A temperature sensing system, which comprises: a temperature analyzing circuit, for sensing temperature and generating an analyzing result in response to the sensed temperature; and a control unit, for controlling a temperature sensing time interval; wherein the control unit continuously changes the temperature sensing time interval according to a predetermined temperature range in response to the sensed temperature.
摘要翻译: 一种温度感测系统,包括:温度分析电路,用于感测温度并响应于所感测的温度产生分析结果; 以及控制单元,用于控制温度感测时间间隔; 其中所述控制单元响应于所感测的温度,根据预定温度范围连续地改变温度感测时间间隔。
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公开(公告)号:US07166900B1
公开(公告)日:2007-01-23
申请号:US11205402
申请日:2005-08-17
IPC分类号: H01L31/058
CPC分类号: G11C7/04 , G11C11/4074 , G11C11/4076 , G11C11/4094
摘要: A semiconductor memory device comprises a temperature dependent voltage source for outputting a voltage at its output in dependence on a temperature measured in the semiconductor memory device. At least one memory cell is provided with at least one first transistor. The first transistor includes a first transistor body, which is connected to the output of said temperature dependent voltage source.
摘要翻译: 半导体存储器件包括一个依赖于温度的电压源,用于根据在半导体存储器件中测量的温度在其输出端输出电压。 至少一个存储单元设置有至少一个第一晶体管。 第一晶体管包括与所述依赖于温度的电压源的输出端连接的第一晶体管本体。
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