摘要:
A semiconductor device includes a sense resistor that converts a sense current flowing through a sense terminal of a switching element to a voltage (sense voltage), and an overcurrent protection circuit that performs a protection operation for the switching element when the sense voltage exceeds a threshold. The overcurrent protection circuit can switch the threshold to a first reference voltage, or to a second reference voltage which is lower than the first reference voltage. The overcurrent protection circuit sets the threshold to the second reference voltage at the time of the switching element being in a steady state, and sets the threshold to the first reference voltage during a mirror period immediately after turning-on of the switching element.
摘要:
A gate drive circuit includes a turn-on side circuit for turning on a gate of a power switching device, the turn-on side circuit including a first turn-on side power supply circuit and a second turn-on side power supply circuit, the first turn-on side power supply circuit including: a first turn-on voltage source for supplying a first turn-on voltage; first turn-on wiring; and a first turn-on switch connected in the first turn-on wiring and controlled by a gate drive signal; and the second turn-on side power supply circuit including: a second turn-on voltage source for supplying a second turn-on voltage applied to the gate of the power switching device to set the power switching device in a steady (on) state; second turn-on wiring; a second turn-on switch connected in the second turn-on wiring; and a turn-on side delay circuit for delaying the gate drive signal and passing it to the second turn-on switch.
摘要:
A switching element drive circuit of the present invention outputs a voltage to the switching element by use of a voltage output unit configured as an amplifier circuit having a voltage amplification factor of 1 to drive the switching element. When the switching element is turned on, a turn-on voltage having a value higher than a threshold voltage of the switching element and lower than a value of a voltage of a power supply of the switching element drive circuit is provided to the voltage output unit. After elapse of a turn-on voltage maintenance period, a voltage provided to the voltage output unit is switched by a voltage switching unit to the voltage of the power supply of the switching element drive circuit.
摘要:
A power module comprises: first and second terminals; first and second switching elements having a first electrode and a second electrode which is connected to the second terminal; first and second wirings respectively connecting the first electrodes of the first and second switching elements to the first terminal; and a third wiring directly connecting the first electrode of the first switching element to the first electrode of the second switching element, wherein parasitic inductances of the first and second wiring are different or switching characteristics of the first and second switching elements are different.
摘要:
A gate drive circuit includes a turn-on side circuit for turning on a gate of a power switching device, the turn-on side circuit including a first turn-on side power supply circuit and a second turn-on side power supply circuit, the first turn-on side power supply circuit including: a first turn-on voltage source for supplying a first turn-on voltage; first turn-on wiring; and a first turn-on switch connected in the first turn-on wiring and controlled by a gate drive signal; and the second turn-on side power supply circuit including: a second turn-on voltage source for supplying a second turn-on voltage applied to the gate of the power switching device to set the power switching device in a steady (on) state; second turn-on wiring; a second turn-on switch connected in the second turn-on wiring; and a turn-on side delay circuit for delaying the gate drive signal and passing it to the second turn-on switch.
摘要:
A first bypass circuit has first and second nodes. The first load circuit is connected between the first node and a signal input terminal of the second drive circuit. The second load circuit has substantially the same impedance as the first load circuit, and is connected between the second node and the reference potential terminal of the second drive circuit. The first drive circuit has the same reference potential as the input buffer. The second bypass circuit passes a signal of a predetermined frequency or higher between a current path formed between the first load circuit and the signal input terminal of the second drive circuit and a current path formed between the second load circuit and the reference potential terminal of the second drive circuit. The first bypass circuit passes a signal of a predetermined frequency or higher between the first and second nodes.