Nuclear power plant and operation method thereof
    2.
    发明申请
    Nuclear power plant and operation method thereof 有权
    核电厂及其运行方法

    公开(公告)号:US20050220253A1

    公开(公告)日:2005-10-06

    申请号:US11033953

    申请日:2005-01-13

    IPC分类号: G21C1/08 G21C19/00 G21D3/00

    摘要: A nuclear power plant of the invention is equipped, for example, with a reactor; a steam loop comprising high and low pressure turbines; a condenser for condensing steam discharged therefrom the low pressure turbine; a feedwater heater for heating feedwater supplied from the condenser; and a feedwater loop for leading feedwater discharged from the feedwater heater to the reactor, and an operation method thereof is characterized by augmenting a second reactor thermal power output in a second operation cycle of the reactor larger than a first reactor thermal power output in a first operation cycle; and making an increase ratio of extraction steam, which is led to the feedwater heater with being extracted from the steam loop, in the second operation cycle for the first operation cycle smaller than an increase ratio of the second reactor thermal power output for the first reactor thermal power output.

    摘要翻译: 本发明的核电站例如配备有反应器; 包括高压和低压涡轮机的蒸汽回路; 用于冷凝从其排出的蒸汽的冷凝器; 用于加热从冷凝器供给的给水的给水加热器; 以及用于从给水加热器排放到反应器的引导给水的给水回路及其操作方法的特征在于,在反应器的第二操作循环中增加第二反应堆热功率输出,其大于第一反应堆热功率输出 操作周期; 并且在第一操作循环的第二操作循环中,使第一反应器的第二反应堆热功率输出的增加比率小于从蒸汽回路引出的给水加热器的提取比例增加 火力输出。

    Semiconductor device
    5.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号:US08217491B2

    公开(公告)日:2012-07-10

    申请号:US12888640

    申请日:2010-09-23

    IPC分类号: H01L29/00

    摘要: A semiconductor device includes a base insulating film on which a silicon fuse, silicon wiring patterns, and a silicon guard ring are formed. The silicon guard ring surrounds the silicon fuse and has silicon cutout parts so as not to contact the silicon wiring patterns. A via guard ring, which has via cutout parts located above the silicon cutout parts, is formed in an interlayer insulating film and on the silicon guard ring. A metal wiring guard ring is formed on the via guard ring and the interlayer insulating film. A silicon nitride film is formed on the interlayer insulating film so as to cover the metal wiring guard ring. An interface between the interlayer insulating film and the metal wiring guard ring at the via cutout parts is covered by the silicon nitride film.

    摘要翻译: 半导体器件包括其上形成有硅熔丝,硅布线图案和硅保护环的基底绝缘膜。 硅保护环围绕硅熔丝并具有硅切口部分,以便不接触硅布线图案。 具有位于硅缺口部分上方的通孔切口部分的通孔保护环形成在层间绝缘膜中和硅保护环上。 在通孔保护环和层间绝缘膜上形成金属布线保护环。 在层间绝缘膜上形成氮化硅膜,以覆盖金属布线保护环。 在通孔切口部分处的层间绝缘膜和金属布线保护环之间的界面被氮化硅膜覆盖。

    Semiconductor device used in step-up DC-DC converter, and step-up DC-DC converter
    6.
    发明授权
    Semiconductor device used in step-up DC-DC converter, and step-up DC-DC converter 失效
    用于升压型DC-DC转换器的升压型DC-DC转换器

    公开(公告)号:US08212282B2

    公开(公告)日:2012-07-03

    申请号:US12889695

    申请日:2010-09-24

    IPC分类号: H01L29/66

    摘要: A power supply device is disclosed that is able to satisfy the power requirements of a device in service and has high efficiency. The power supply device includes a first power supply; a voltage step-up unit that steps up an output voltage of the first power supply; a voltage step-down unit that steps down an output voltage of the voltage step-up unit; and a load that is driven to operate by an output voltage of the voltage step-down unit. The voltage step-up unit steps up the output voltage of the first power supply to a lower limit of an operating voltage of the voltage step-down unit.

    摘要翻译: 公开了能够满足正在使用的设备的功率要求并具有高效率的电源装置。 电源装置包括第一电源; 升压单元,其升高第一电源的输出电压; 降压单元的输出电压的降压单元; 以及被驱动以通过降压单元的输出电压进行工作的负载。 升压单元将第一电源的输出电压升压到降压单元的工作电压的下限。

    Semiconductor resistor, method of manufacturing the same, and current generating device using the same
    7.
    发明授权
    Semiconductor resistor, method of manufacturing the same, and current generating device using the same 有权
    半导体电阻,其制造方法以及使用该半导体电阻的电流产生装置

    公开(公告)号:US07944000B2

    公开(公告)日:2011-05-17

    申请号:US11811860

    申请日:2007-06-11

    IPC分类号: H01L21/70

    摘要: A method for manufacturing a semiconductor resistor includes forming a well region in a semiconductor substrate, with the well region serving as a resistive region, forming a pair of contact regions spaced apart from each other in the well region, and forming a diffusion region in an intermediate portion between the pair of contact regions on a surface of the well region. The diffusion region is configured to adjust resistance and temperature dependence of the semiconductor resistor.

    摘要翻译: 一种制造半导体电阻器的方法包括在半导体衬底中形成阱区,阱区用作电阻区,在阱区中形成彼此间隔的一对接触区,并形成扩散区 在该区域的表面上的一对接触区域之间的中间部分。 扩散区域被配置为调节半导体电阻器的电阻和温度依赖性。

    Nuclear reactor
    8.
    发明授权
    Nuclear reactor 失效
    核反应堆

    公开(公告)号:US06718001B2

    公开(公告)日:2004-04-06

    申请号:US09942945

    申请日:2001-08-31

    IPC分类号: G21C900

    摘要: In an indirect cycle nuclear reactor, a size of the reactor containment vessel is decreased by removing decay heat inside the reactor pressure vessel without using any active component to improve the economic feasibility. A main steam pipe communicating with a heat exchanger of the indirect cycle nuclear reactor is branched in a position upstream of a main steam isolation valve to connect the branched pipe to a heat exchanger in a pressure suppression pool through an isolation valve. A feed water pipe is also branched in a position upstream of an isolation valve to connect the branched pipe to the heat exchanger through the isolation valve. Decay heat is dissipated from the heat exchanger into the pressure suppression pool, and condensed water condensed by heat dissipation is returned to the heat exchanger to cool the inside of the pressure vessel. Heat in the pressure suppression pool is transferred from a condensing type heat exchanger to a heat dissipater outside a containment vessel to be dissipated to the outside of the containment vessel.

    摘要翻译: 在间接循环核反应堆中,通过在反应器压力容器内除去腐蚀热而不使用任何活性组分来改善反应堆容纳容器的尺寸以改善经济可行性。 与间接循环核反应堆的热交换器连通的主蒸汽管在主蒸汽隔离阀的上游位置分支,以通过隔离阀将分支管连接到压力抑制池中的热交换器。 给水管也在隔离阀的上游位置分支,以通过隔离阀将分支管连接到热交换器。 衰变热从热交换器消散到压力抑制池中,通过散热冷凝的冷凝水返回到热交换器以冷却压力容器的内部。 压力抑制池中的热量从冷凝式热交换器传送到安全壳外部的散热器,以散发到安全壳的外部。

    Semiconductor device with a fuse
    9.
    发明授权
    Semiconductor device with a fuse 失效
    带保险丝的半导体器件

    公开(公告)号:US08426942B2

    公开(公告)日:2013-04-23

    申请号:US12840872

    申请日:2010-07-21

    IPC分类号: H01L23/52

    摘要: A semiconductor device includes a semiconductor substrate, a base insulating layer, a silicon fuse, a pair of silicon wires, a silicon guard ring, an insulation coating, a first interlayer insulating layer, a via guard ring, a metal guard ring, a final insulating layer, and a fuse window. The base insulating layer is disposed over the semiconductor substrate. The silicon fuse is disposed on the base insulating layer. The pair of silicon wires is disposed on the base insulating layer. The silicon guard ring is disposed on the base insulating layer. The insulation coating is deposited at least over surfaces of the silicon wires. The first interlayer insulating layer is disposed on the base insulating layer. The final insulating layer is disposed on the interlayer insulating layer. The fuse window is defined above the silicon fuse inside the guard rings.

    摘要翻译: 半导体器件包括半导体衬底,基底绝缘层,硅熔丝,一对硅线,硅保护环,绝缘涂层,第一层间绝缘层,通孔保护环,金属保护环,最终 绝缘层和保险丝窗。 基极绝缘层设置在半导体衬底上。 硅保险丝设置在基底绝缘层上。 一对硅线设置在基底绝缘层上。 硅保护环设置在基底绝缘层上。 绝缘涂层至少沉积在硅线的表面上。 第一层间绝缘层设置在基底绝缘层上。 最后的绝缘层设置在层间绝缘层上。 保险丝窗口位于保护环内的硅保险丝上方。

    SEMICONDUCTOR DEVICE USED IN STEP-UP DC-DC CONVERTER, AND STEP-UP DC-DC CONVERTER
    10.
    发明申请
    SEMICONDUCTOR DEVICE USED IN STEP-UP DC-DC CONVERTER, AND STEP-UP DC-DC CONVERTER 失效
    升压DC-DC转换器和升压型DC-DC转换器中使用的半导体器件

    公开(公告)号:US20110012170A1

    公开(公告)日:2011-01-20

    申请号:US12889695

    申请日:2010-09-24

    IPC分类号: H01L29/74

    摘要: A power supply device is disclosed that is able to satisfy the power requirements of a device in service and has high efficiency.The power supply device includes a first power supply; a voltage step-up unit that steps up an output voltage of the first power supply; a voltage step-down unit that steps down an output voltage of the voltage step-up unit; and a load that is driven to operate by an output voltage of the voltage step-down unit. The voltage step-up unit steps up the output voltage of the first power supply to a lower limit of an operating voltage of the voltage step-down unit.

    摘要翻译: 公开了能够满足正在使用的设备的功率要求并具有高效率的电源装置。 电源装置包括第一电源; 升压单元,其升高第一电源的输出电压; 降压单元的输出电压的降压单元; 以及被驱动以通过降压单元的输出电压进行工作的负载。 升压单元将第一电源的输出电压升压到降压单元的工作电压的下限。