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    Processing system and operating method of processing system
    1.
    发明申请
    Processing system and operating method of processing system 审中-公开
    处理系统和处理系统的操作方法

    公开(公告)号：US20050284575A1

    公开(公告)日：2005-12-29

    申请号：US11196398

    申请日：2005-08-04

    申请人： Kazuhide Hasebe ,  Atsushi Endo ,  Mitsuhiro Okada ,  Jun Ogawa ,  Akihito Yamamoto ,  Takashi Nakao ,  Masaki Kamimura ,  Yukihiro Ushiku

    发明人： Kazuhide Hasebe ,  Atsushi Endo ,  Mitsuhiro Okada ,  Jun Ogawa ,  Akihito Yamamoto ,  Takashi Nakao ,  Masaki Kamimura ,  Yukihiro Ushiku

    IPC分类号： C23C16/44 ,  H01L21/00 ,  C23F1/00 ,  B44C1/22

    CPC分类号： H01L21/67248 ,  C23C16/4405 ,  H01L21/67109

    摘要： A processing system of the present invention includes: a reaction container in which a substrate to be processed is placed, a process-gas supplying mechanism that supplies a process gas into the reaction container at a process to the substrate, a cleaning-gas supplying mechanism that supplies a corrosive cleaning gas into the reaction container at a cleaning process, a gas-discharging-way member connected to the reaction chamber, a heating unit that heats a specific portion of the reaction container and the gas-discharging-way member, a temperature detecting unit that detects a temperature of the specific portion, a temperature controlling unit that controls the heating unit based on a detection value detected by the temperature detecting unit in such a manner that the specific portion becomes to a predetermined target temperature, and a temperature changing unit that changes the target temperature between at the process to the substrate and at the cleaning process. By means of the temperature changing unit, the target temperature is set to a temperature at which adhesion of reaction by-products to the specific portion may be inhibited, at the process to the substrate, while the target temperature is set to a temperature at which corrosion of the specific portion may be inhibited, at the cleaning process.

    摘要翻译： 本发明的处理系统包括：反应容器，其中放置有待处理的基板，处理气体供给机构，其将处理气体在处理过程中提供给反应容器;清洗气体供给机构 在清洁过程中向反应容器提供腐蚀性清洁气体，连接到反应室的气体排出构件，加热反应容器的特定部分的加热单元和气体排出通路构件， 温度检测单元，其检测特定部分的温度;温度控制单元，其基于由温度检测单元检测的检测值以特定部分变为预定目标温度的方式控制加热单元;温度控制单元， 改变单元，其在过程到基板和清洁过程之间改变目标温度。 通过温度变化单元，将目标温度设定为在基板处理时可以抑制反应副产物对特定部分的粘附的温度，同时将目标温度设定为温度 在清洗过程中可能会抑制特定部分的腐蚀。

    Method of cleaning thin film deposition system, thin film deposition system and program
    2.
    发明申请
    Method of cleaning thin film deposition system, thin film deposition system and program 审中-公开
    清洗薄膜沉积系统，薄膜沉积系统和程序的方法

    公开(公告)号：US20060081182A1

    公开(公告)日：2006-04-20

    申请号：US11246290

    申请日：2005-10-11

    申请人： Mitsuhiro Okada ,  Atsushi Endo ,  Toshiharu Nishimura ,  Kazuhide Hasebe

    发明人： Mitsuhiro Okada ,  Atsushi Endo ,  Toshiharu Nishimura ,  Kazuhide Hasebe

    IPC分类号： C23C16/00 ,  B08B3/12 ,  B44C1/22 ,  B05C11/00

    CPC分类号： C23C16/4405

    摘要： A thin film deposition system cleaning method is capable of efficiently removing reaction products deposited on surfaces of component members of a thin film deposition system. A thermal processing system 1 capable of carrying out the thin film deposition system cleaning method includes a controller 100. The controller 100 controls a heating means so as to heat the interior of a reaction tube 2 at a temperature in the range of 400° C. to 700° C. The controller 100 controls a cleaning gas supply means for supplying a cleaning gas containing fluorine and hydrogen fluoride through a process gas supply pipe 17 into the reaction tube 2 to remove deposits deposited on surfaces exposed to an atmosphere in the reaction tube 2.

    摘要翻译： 薄膜沉积系统清洁方法能够有效地去除沉积在薄膜沉积系统的部件的表面上的反应产物。 能够进行薄膜沉积系统清洗方法的热处理系统1包括控制器100。 控制器100控制加热装置，以便在400℃至700℃范围内的温度下加热反应管2的内部。控制器100控制用于供应含有氟的清洁气体的清洁气体供应装置 和氟化氢通过工艺气体供给管17进入反应管2，以去除沉积在暴露于反应管2中的气氛的表面上的沉积物。

    Film formation apparatus and method of using the same
    4.
    发明授权
    Film formation apparatus and method of using the same 有权
    成膜装置及其使用方法

    公开(公告)号：US07604010B2

    公开(公告)日：2009-10-20

    申请号：US11209741

    申请日：2005-08-24

    申请人： Kazuhide Hasebe ,  Nobutake Nodera ,  Atsushi Endo ,  Makoto Umeki ,  Katsumi Nishimura ,  Masakazu Minami ,  Makoto Yoshida

    发明人： Kazuhide Hasebe ,  Nobutake Nodera ,  Atsushi Endo ,  Makoto Umeki ,  Katsumi Nishimura ,  Masakazu Minami ,  Makoto Yoshida

    IPC分类号： H01L21/00

    CPC分类号： C23C16/4405 ,  C23C16/4412 ,  Y02C20/30 ,  Y02P70/605

    摘要： A film formation apparatus for a semiconductor process includes a cleaning gas supply circuit, a concentration measuring section, and an information processor. The cleaning gas supply circuit is configured to supply a cleaning gas into a reaction chamber to perform cleaning of removing from an inner surface of the reaction chamber a by-product film derived from a film formation gas. The concentration measuring section is disposed in an exhaust system to monitor concentration of a predetermined component contained in exhaust gas from the reaction chamber. The information processor is configured to compare a measurement value obtained by the concentration measuring section with a preset value and to thereby determine an end point of the cleaning.

    摘要翻译： 用于半导体工艺的成膜装置包括清洁气体供应电路，浓度测量部分和信息处理器。 清洗气体供给回路构成为向反应室供给清洗气体，进行从反应室的内表面除去来自成膜气体的副产物膜的清洗。 集中测定部设置在排气系统中，以监测来自反应室的废气中所含有的预定成分的浓度。 信息处理器被配置为将由浓度测量部获得的测量值与预设值进行比较，从而确定清洁的终点。

    Film formation apparatus and method of using the same
    5.
    发明授权
    Film formation apparatus and method of using the same 有权
    成膜装置及其使用方法

    公开(公告)号：US07470637B2

    公开(公告)日：2008-12-30

    申请号：US11090082

    申请日：2005-03-28

    申请人： Mitsuhiro Okada ,  Toshiharu Nishimura ,  Atsushi Endo

    发明人： Mitsuhiro Okada ,  Toshiharu Nishimura ,  Atsushi Endo

    IPC分类号： H01L21/31

    CPC分类号： C23C16/4405 ,  C23C16/4404 ,  H01L21/0217 ,  H01L21/02271 ,  H01L21/3185

    摘要： A method of using a film formation apparatus for a semiconductor process includes removing by a cleaning gas a by-product film deposited on an inner surface of a reaction chamber of the film formation apparatus, and then chemically planarizing the inner surface of the reaction chamber by a planarizing gas. The inner surface contains as a main component quartz or silicon carbide. The removing is performed while supplying the cleaning gas into the reaction chamber, and setting the reaction chamber at a first temperature and first pressure to activate the cleaning gas. The planarizing is performed while supplying the planarizing gas into the reaction chamber, and setting the reaction chamber at a second temperature and second pressure to activate the planarizing gas. The planarizing gas contains fluorine and hydrogen fluoride. The second temperature is within a range of from 300 to 800° C.

    摘要翻译： 使用半导体工艺的成膜装置的方法包括：通过清洗气体除去沉积在成膜装置的反应室的内表面上的副产物膜，然后用反应室的内表面化学平面化反应室的内表面 平坦化气体。 内表面包含石英或碳化硅的主要成分。 在将清洁气体供应到反应室中并且将反应室设置在第一温度和第一压力下以启动清洁气体的同时进行除去。 在将平坦化气体供应到反应室中并且将反应室设置在第二温度和第二压力下以激活平坦化气体的同时进行平面化。 平坦化气体含氟和氟化氢。 第二温度在300至800℃的范围内。

    Film formation apparatus and method of using the same
    6.
    发明申请
    Film formation apparatus and method of using the same 有权
    成膜装置及其使用方法

    公开(公告)号：US20060068598A1

    公开(公告)日：2006-03-30

    申请号：US11090082

    申请日：2005-03-28

    申请人： Mitsuhiro Okada ,  Toshiharu Nishimura ,  Atsushi Endo

    发明人： Mitsuhiro Okada ,  Toshiharu Nishimura ,  Atsushi Endo

    IPC分类号： H01L21/31

    CPC分类号： C23C16/4405 ,  C23C16/4404 ,  H01L21/0217 ,  H01L21/02271 ,  H01L21/3185

    摘要： A method of using a film formation apparatus for a semiconductor process includes removing by a cleaning gas a by-product film deposited on an inner surface of a reaction chamber of the film formation apparatus, and then chemically planarizing the inner surface of the reaction chamber by a planarizing gas. The inner surface contains as a main component quartz or silicon carbide. The removing is performed while supplying the cleaning gas into the reaction chamber, and setting the reaction chamber at a first temperature and first pressure to activate the cleaning gas. The planarizing is performed while supplying the planarizing gas into the reaction chamber, and setting the reaction chamber at a second temperature and second pressure to activate the planarizing gas. The planarizing gas contains fluorine and hydrogen fluoride. The second temperature is within a range of from 300 to 800° C.

    摘要翻译： 使用半导体工艺的成膜装置的方法包括：通过清洗气体除去沉积在成膜装置的反应室的内表面上的副产物膜，然后用反应室的内表面化学平面化反应室的内表面 平坦化气体。 内表面包含石英或碳化硅的主要成分。 在将清洁气体供应到反应室中并且将反应室设置在第一温度和第一压力下以启动清洁气体的同时进行除去。 在将平坦化气体供应到反应室中并且将反应室设置在第二温度和第二压力下以激活平坦化气体的同时进行平面化。 平坦化气体含氟和氟化氢。 第二温度在300至800℃的范围内。