摘要:
A dispersion compensating optical fiber for NZ-DSFs, includes: an uncovered dispersion compensating optical fiber; a double-layered resin coating disposed around the uncovered dispersion compensating optical fiber; and an outer coating layer having a thickness of 3 to 7 μm, containing silicone in an amount of 1 to 5% by weight, and disposed around the double-layered resin coating. The outer diameter of the uncovered dispersion compensating optical fiber is in a range from 90 to 125 μm, an outer diameter of the dispersion compensating optical fiber is in a range from 180 to 250 μm, and the amount of silicone contained in the outer coating layer is determined such that an adhesive property of the outer coating layer is 1 gf/mm or less.
摘要:
A dispersion compensating optical fiber includes an uncovered dispersion compensating optical fiber containing a core and a cladding, and a resin coating which is disposed around the uncovered dispersion compensating optical fiber, wherein the resin coating has an adhesive property of 10 g/mm or less, and which includes an outer coating layer which is formed to have a thickness of 3 μm or more, and the outer diameter of the uncovered dispersion compensating optical fiber is in a range from 90 to 125 μm, and the outer diameter of the dispersion compensating optical fiber is in a range from 180 to 250 μm.
摘要:
A dispersion compensating optical fiber for NZ-DSFs, includes: an uncovered dispersion compensating optical fiber; a double-layered resin coating disposed around the uncovered dispersion compensating optical fiber; and an outer coating layer having a thickness of 3 to 7 μm, containing silicone in an amount of 1 to 5% by weight, and disposed around the double-layered resin coating. The outer diameter of the uncovered dispersion compensating optical fiber is in a range from 90 to 125 μm, an outer diameter of the dispersion compensating optical fiber is in a range from 180 to 250 μm, and the amount of silicone contained in the outer coating layer is determined such that an adhesive property of the outer coating layer is 1 gf/mm or less.
摘要:
An optical fiber is formed by performing vapor phase deposition of SiO2 on the outside of a glass rod comprising a core section and a first cladding section and drawing a glass preform which formed by a second cladding section. Also, a single mode optical fiber is manufactured so that the ratio of the diameter D of the first cladding section and the diameter d of the core section is in a range of 4.0 to 4.8, and OH concentration is 0.1 ppm or less. Also, an optical fiber is manufactured so that a value of D/d>4.8, and the OH concentration is 0. 1 ppm or less. It is thereby possible to maintain an initial loss in the 1380 nm wavelength range even if hydrogen diffusion occurs.
摘要:
An optical/electrical interconnect board includes a base material composing an electrical circuit; a plurality of light receiving/emitting units, each of the units being constituted by a light emitting element and a light receiving element packaged on the base material; and an optical fiber tape that connects the light emitting element to the light receiving element for each of the light receiving/emitting units, the optical fiber tape being formed by bringing together optical wires for the units in a side-by-side manner and coating with a first coating material.
摘要:
A drawing method for a bare optical fiber, comprises the steps of: melting an optical fiber preform using a heating device and drawing the bare optical fiber; and naturally cooling down the bare optical fiber or forcibly cooling down the bare optical fiber by a cooling device after the heating and melting step, wherein a temperature history during the drawing the optical fiber preform to obtain the bare optical fiber in the heating device satisfies a relational expression: T≦−0.01X+12 where a time period when the heated and molten portion of the optical fiber preform heated and molten by the heating device reaches 1800° C. or higher is T (min) and a OH group concentration in a cladding layer of the optical fiber preform is X (wtppm).
摘要:
An optical fiber coating die is made such that an interfacial shear rate of the optical fiber to the resin coat is calculated in accordance with a pressure value of resin inside a coating cup, and the interfacial shear rate is in a range of −1.5×105 to 0 sec−1. Also, an optical fiber drawing die is made such that the interfacial shear rate of the optical fiber to the resin coat is calculated in accordance with a diameter of a coating resin, and the interfacial shear rate is in a range of range of −3×105 to 2×105 sec−1. By doing this, an optical fiber drawing die which can be used in an optical fiber drawing method so as to realize stable resin coating operation even in high-speed drawing operation and high productivity can be realized.
摘要:
An optical fiber coating die is made such that an interfacial shear rate of the optical fiber to the resin coat is calculated in accordance with a pressure value of resin inside a coating cup, and the interfacial shear rate is in a range of −1.5×105 to 0 sec−1. Also, an optical fiber drawing die is made such that the interfacial shear rate of the optical fiber to the resin coat is calculated in accordance with a diameter of a coating resin, and the interfacial shear rate is in a range of range of −3×105 to 2×105 sec−1. By doing this, an optical fiber drawing die which can be used in an optical fiber drawing method so as to realize stable resin coating operation even in high-speed drawing operation and high productivity can be realized.
摘要:
When an optical fiber 3 is formed by drawing a preform 1, twisting is generated in the optical fiber 3. An outer diameter of the optical fiber 3 is continuously measured along a longitudinal direction of the optical fiber 3 from two different directions in a plane perpendicular to the advancing direction of the optical fiber 3 by a device for measuring twisting 4, thus twisting of the optical fiber 3 is measured.
摘要:
A method of producing a zinc oxide-based semiconductor crystal, including: introducing at least zinc and oxygen on a surface of a substrate; and growing a zinc oxide-based semiconductor crystal on the substrate, wherein a total or partial portion of the zinc is ionized in a vacuum atmosphere of 1×10−4 Torr or less and is introduced to the surface of the substrate to grow the ZnO based semiconductor crystal. As a result, it is possible to provide a method of producing a zinc oxide based semiconductor crystal capable of growing a zinc oxide semiconductor crystal having excellent surface flatness and crystallinity and including an extremely small amount of impurities at a high growth rate.