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公开(公告)号:US4985690A
公开(公告)日:1991-01-15
申请号:US375417
申请日:1989-07-05
申请人: Kazuhiro Eguchi , Eiichi Ochiai , Shinichiro Ito , Takehiko Yoneda , Hiromitsu Taki , Toshiharu Noguchi , Kuniaki Kiyosue , Akiro Yoshida , Morikazu Sagawa , Mitsuo Makimoto
发明人: Kazuhiro Eguchi , Eiichi Ochiai , Shinichiro Ito , Takehiko Yoneda , Hiromitsu Taki , Toshiharu Noguchi , Kuniaki Kiyosue , Akiro Yoshida , Morikazu Sagawa , Mitsuo Makimoto
CPC分类号: H01P7/04 , H01P1/2053
摘要: A coaxial dielectric resonator for use at high frequency. The outer or inner peripheral surface of a tubular dielectric member is stepped so as to provide a greater suppression of spurious resonance. The dielectric member has a prism-shaped outer configuration so as to provide a high Q value, as well as improved space factor.
摘要翻译: 用于高频的同轴电介质谐振器。 管状电介质构件的外周表面或内周表面是阶梯状的,以便提供更大的寄生谐振抑制。 电介质构件具有棱柱形外部构造,以提供高Q值以及改善的空间因子。
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公开(公告)号:US5239280A
公开(公告)日:1993-08-24
申请号:US739271
申请日:1991-08-01
申请人: Toshiharu Noguchi , Kazuhiro Eguchi , Takumi Naruse , Kouichi Watanabe , Kuniaki Kiyosue , Hiromitsu Taki
发明人: Toshiharu Noguchi , Kazuhiro Eguchi , Takumi Naruse , Kouichi Watanabe , Kuniaki Kiyosue , Hiromitsu Taki
IPC分类号: H01P1/205
CPC分类号: H01P1/2056
摘要: A dielectric filter including a plurality of coaxial type dielectric resonators having outer conductors and inner conductors is arranged so that the outer conductors are connected to each other. Also included in the dielectric filter are central conductors arranged to be brought into contact with the inner conductors of said plurality of coaxial type dielectric resonators and a dielectric substrate having thereon a plurality of substrate conductors whose number at least corresponds to the number of the plurality of coaxial type dielectric resonators, and input/output terminals provided on said dielectric substrate. The central conductors are respectively coupled to the substrate conductors provided on the dielectric substrate and inductance elements are connected to the substrate conductors which are positioned at both sides.
摘要翻译: 包括具有外部导体和内部导体的多个同轴型介质谐振器的介质滤波器被布置成使得外部导体彼此连接。 还包括在介质滤波器中的中心导体被布置成与所述多个同轴型介质谐振器的内导体接触,并且其上具有多个基板导体的电介质基板,其数量至少对应于多个 同轴型介质谐振器和设置在所述电介质基板上的输入/输出端子。 中心导体分别耦合到设置在电介质基板上的基板导体,并且电感元件连接到位于两侧的基板导体。
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公开(公告)号:US5276412A
公开(公告)日:1994-01-04
申请号:US890424
申请日:1992-05-29
申请人: Takehiko Yoneda , Kazuhiro Eguchi , Hiromitsu Taki
发明人: Takehiko Yoneda , Kazuhiro Eguchi , Hiromitsu Taki
CPC分类号: H01P1/2053
摘要: A high-frequency filter of the type having a plurality of resonators open at least at one end thereof, a dielectric board forming an input/output coupling and an interstage coupling, and a case for holding therein the resonators and the dielectric board, wherein the dielectric board is made of a ceramic having a critical stress intensity factor K.sub.1c of not less than 5 MPa.multidot.m.sup.1/2 and a dielectric dissipation factor tan. .delta. of not exceeding 1% in a working frequency band of said high-frequency filter, and wherein electrodes are provided on the dielectric board to form an input/output coupling capacity and an interstage coupling capacity. The high-frequency filter of the foregoing construction has the advantage of an excellent mechanical strength which is capable of withstanding severe mechanical loads such as falling impacts or various stresses.
摘要翻译: 一种高频滤波器,其具有至少在其一端开放的多个谐振器,形成输入/输出耦合的介质板和级间耦合,以及用于保持谐振器和电介质板的壳体,其中, 电介质板由具有不小于5MPa * m1 / 2的临界应力强度因子K1c和介电损耗因数tan的陶瓷制成。 (delta)在所述高频滤波器的工作频带中不超过1%,并且其中电极设置在电介质板上以形成输入/输出耦合能力和级间耦合能力。 上述结构的高频过滤器具有优异的机械强度的优点,其能够承受严重的机械负载,例如落下的冲击或各种应力。
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公开(公告)号:US5248949A
公开(公告)日:1993-09-28
申请号:US850279
申请日:1992-03-12
申请人: Kazuhiro Eguchi , Fumio Fukushima , Koji Nishimura , Katsumi Sasaki , Takehiko Yoneda , Hiromitsu Taki
发明人: Kazuhiro Eguchi , Fumio Fukushima , Koji Nishimura , Katsumi Sasaki , Takehiko Yoneda , Hiromitsu Taki
CPC分类号: H01P1/20345
摘要: A flat type dielectric filter comprises a substantially U-shaped strip line formed such that each center frequency of spurious output deviates from each odd number frequency times the center frequency of the dielectric filter. That is, it comprises a first portion so curved to form an open loop and two second portions formed to have a larger width than the first portion, each of the second portions being provided to an end of the first portion such that each extends in the opposite direction to the other. In this filter, input/output electrodes confronting ends of U-shaped strip line can be formed on a different layer from the layer where the resonator is formed in order to reduce its size. Reduction of size can be obtained by vertically folding the U-shaped strip line extending horizontally. Terminals of this filter formed on the side surface have a first layer formed on the side surface and a second layer formed on the first layer. The first layer is made of silver, the second layer nickel, or the first layer copper, the second layer solder. This filter has two conducting plates sandwiching dielectric substrates including each resonator, the conducting plate being coated with a epoxy resin or dielectric substance.
摘要翻译: 扁平型介质滤波器包括基本上U形的带状线,其形成为使得杂散输出的每个中心频率偏离每个奇数频率乘以介质滤波器的中心频率。 也就是说,它包括弯曲形成开环的第一部分和形成为具有比第一部分更大的宽度的两个第二部分,每个第二部分设置在第一部分的端部,使得每个在 与另一方相反。 在该滤波器中,可以在与形成谐振器的层不同的层上形成面对U字形带状线的端部的输入/输出电极,以减小其尺寸。 可以通过垂直折叠水平延伸的U形带状线来获得尺寸的减小。 形成在侧面上的该过滤器的端子具有形成在侧表面上的第一层和形成在第一层上的第二层。 第一层由银制成,第二层为镍,或第一层为铜,第二层为焊料。 该过滤器具有两个导电板,夹持包括每个谐振器的电介质基片,该导电板涂覆有环氧树脂或介电材料。
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公开(公告)号:US06621378B2
公开(公告)日:2003-09-16
申请号:US09879018
申请日:2001-06-12
申请人: Takumi Naruse , Kuniaki Kiyosue , Hiromi Sakita , Kenzo Isozaki , Kazuhiro Eguchi , Katsumi Sasaki
发明人: Takumi Naruse , Kuniaki Kiyosue , Hiromi Sakita , Kenzo Isozaki , Kazuhiro Eguchi , Katsumi Sasaki
IPC分类号: H03H701
CPC分类号: H03H7/1766 , H03H7/0115 , H03H2001/0085
摘要: A filter includes a substrate with a relative dielectric constant of 200 or less and a thickness of 0.1 mm or more. A first electrode is disposed on at least one surface of the substrate, a group of second electrodes is disposed on at least the other surface of the substrate. Each of the second electrodes is not in contact with each other and is not in contact with the first electrode. The filter also includes a chip type inductance element. The chip type inductance element has an inductance ranging from 0.1 nH to 30 nH and has dimensions of L1 in length, L2 in width and L3 in height, which satisfy the following conditions; 0.3 mm
摘要翻译: 滤波器包括相对介电常数为200以下且厚度为0.1mm以上的基板。 第一电极设置在衬底的至少一个表面上,一组第二电极设置在衬底的至少另一个表面上。 每个第二电极彼此不接触并且不与第一电极接触。 滤波器还包括片式电感元件。 芯片型电感元件的电感范围为0.1 nH〜30 nH,尺寸为L1长度,L2宽,L3高,满足以下条件:
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公开(公告)号:US5818312A
公开(公告)日:1998-10-06
申请号:US511238
申请日:1995-08-04
申请人: Toshiharu Noguchi , Kazuhiro Eguchi , Hiroshi Ohno
发明人: Toshiharu Noguchi , Kazuhiro Eguchi , Hiroshi Ohno
IPC分类号: H01P1/205
CPC分类号: H01P1/2056 , H01P1/2053
摘要: A dielectric filter includes two dielectric resonators each having a dielectric base body including first, second, third and fourth side surfaces and first and second end surfaces. A through hole is provided from the first end surface to the second end surface to define an inner surface. An outer conductor is located on and partially covers the four side surfaces. Uncovered portions of the second and third side surfaces are provided that are adjacent to each other and bounded by the outer conductor in three directions. An uncovered portion of the fourth side surface is adjacent to an uncovered portion of the first side surface and the first end surface, and is separated from the third side surface by the outer conductor. An inner conductor is located on the inner surface. A connection conductor is also located on the second end surface and connects the inner conductor to the outer conductor. An interstage coupling electrode is located on the uncovered portion of the first side surface. An area of the uncovered portion of the first side surface extends in at least three directions from the interstage coupling electrode and separates the interstage coupling electrode from the outer conductor. An input/output coupling electrode is located on the uncovered portion of the second and third side surfaces. Areas of the uncovered portions of the second and third side surfaces extend in three directions from the input/output coupling electrode and separate the input/output coupling electrode from the outer conductor. The the outer conductor of a first dielectric resonator is electrically connected to the outer conductor of a second dielectric resonator.
摘要翻译: 介质滤波器包括两个介质谐振器,每个介质谐振器具有包括第一,第二,第三和第四侧面以及第一和第二端面的电介质基体。 从第一端面到第二端面设有通孔,以形成内表面。 外部导体位于并部分地覆盖四个侧表面。 第二和第三侧表面的未覆盖部分被设置成彼此相邻并且在三个方向上由外部导体限定。 第四侧表面的未覆盖部分与第一侧表面和第一端表面的未覆盖部分相邻,并且通过外导体与第三侧表面分离。 内导体位于内表面。 连接导体也位于第二端面上,并将内部导体连接到外部导体。 级间耦合电极位于第一侧表面的未覆盖部分上。 第一侧表面的未覆盖部分的区域从级间耦合电极至少沿三个方向延伸,并将级间耦合电极与外部导体分开。 输入/输出耦合电极位于第二和第三侧表面的未覆盖部分上。 第二和第三侧面的未覆盖部分的区域从输入/输出耦合电极在三个方向上延伸,并将输入/输出耦合电极与外部导体分开。 第一介电谐振器的外导体电连接到第二介质谐振器的外导体。
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公开(公告)号:US07042418B2
公开(公告)日:2006-05-09
申请号:US10716115
申请日:2003-11-19
申请人: Munenori Fujimura , Hiromi Tokunaga , Shuichiro Yamaguchi , Toshiharu Noguchi , Kazuhiro Eguchi , Kenichi Kozaki , Shigefumi Akagi
发明人: Munenori Fujimura , Hiromi Tokunaga , Shuichiro Yamaguchi , Toshiharu Noguchi , Kazuhiro Eguchi , Kenichi Kozaki , Shigefumi Akagi
IPC分类号: H01Q1/36
摘要: A chip antenna includes a substrate, a plurality of helical conductors provided on the substrate, and a pair of terminals provided on the substrate. One of the plurality of helical conductors is connected electrically to one of the terminals, and another one of the helical conductors is connected electrically to the other terminal. Thus, the antenna is of a small size, yet is a single unit which alone is capable of transmitting and receiving electromagnetic waves of a plurality of frequencies.
摘要翻译: 芯片天线包括基板,设置在基板上的多个螺旋导体和设置在基板上的一对端子。 多个螺旋导体中的一个电连接到一个端子,另一个螺旋导体与另一个端子电连接。 因此,天线尺寸较小,但是单个单元能够发送和接收多个频率的电磁波。
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8.
公开(公告)号:US5499004A
公开(公告)日:1996-03-12
申请号:US202073
申请日:1994-02-25
申请人: Toshiharu Noguchi , Kazuhiro Eguchi , Hiroshi Ohno
发明人: Toshiharu Noguchi , Kazuhiro Eguchi , Hiroshi Ohno
IPC分类号: H01P1/205
CPC分类号: H01P1/2056 , H01P1/2053
摘要: A dielectric filter comprises a pair of dielectric resonators 11 and 12, which have outer conductors 11c and 12c formed with cutouts 11k and 12k, respectively. Interstage coupling electrodes 11f and 12f are provided within the region of these cutouts 11k and 12k, so that the electrodes 11f and 12f do not contact with the conductors, such as outer conductors 11c, 12c and the inner conductors 11d, 12d. The dielectric resonators are connected in such a manner that these electrodes 11f and 12f are brought into contact with each other. Furthermore, input/output coupling electrodes 11g and 12g are provided within the region of the cutouts 11k and 12k. Then, by connecting the electrodes 11f and 12f, it becomes possible to provide a dielectric filter which is compact in size and capable of reducing the number of parts and, therefore, cheap in cost.
摘要翻译: 介质滤波器包括一对介质谐振器11和12,它们分别具有形成有切口11k和12k的外导体11c和12c。 级间耦合电极11f和12f设置在这些切口11k和12k的区域内,使得电极11f和12f不与外导体11c,12c和内导体11d,12d等导体接触。 介质谐振器以使得这些电极11f和12f彼此接触的方式连接。 此外,输入/输出耦合电极11g和12g设置在切口11k和12k的区域内。 然后,通过连接电极11f和12f,可以提供尺寸紧凑并且能够减少部件数量并因此成本低廉的介质滤波器。
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公开(公告)号:US20100003813A1
公开(公告)日:2010-01-07
申请号:US12585334
申请日:2009-09-11
申请人: Katsuyuki Sekine , Akio Kaneko , Motoyuki Sato , Seiji Inumiya , Kazuhiro Eguchi
发明人: Katsuyuki Sekine , Akio Kaneko , Motoyuki Sato , Seiji Inumiya , Kazuhiro Eguchi
IPC分类号: H01L21/28
CPC分类号: C23C16/401 , C23C16/56 , H01L21/02329 , H01L21/3145
摘要: According to the present invention, there is provided a semiconductor device comprising: a gate insulating film selectively formed on a predetermined region of a semiconductor substrate; a gate electrode formed on said gate insulating film; and a source region and drain region formed, in a surface portion of said semiconductor substrate, on two sides of a channel region positioned below said gate electrode, wherein a carbon concentration in an interface where said gate insulating film is in contact with said gate electrode is not more than 5×1022 atoms/cm3.
摘要翻译: 根据本发明,提供了一种半导体器件,包括:选择性地形成在半导体衬底的预定区域上的栅极绝缘膜; 形成在所述栅极绝缘膜上的栅电极; 以及在所述半导体衬底的表面部分中形成在位于所述栅极电极下方的沟道区域的两侧上的源极区和漏极区,其中所述栅极绝缘膜与所述栅电极接触的界面中的碳浓度 不大于5×1022原子/ cm3。
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公开(公告)号:US07091135B2
公开(公告)日:2006-08-15
申请号:US10798337
申请日:2004-03-12
申请人: Seiji Inumiya , Kazuhiro Eguchi
发明人: Seiji Inumiya , Kazuhiro Eguchi
IPC分类号: H01L21/31
CPC分类号: H01L21/28202 , H01L21/2807 , H01L29/513 , H01L29/518 , H01L29/665 , H01L29/6659 , H01L29/7833
摘要: There is disclosed a method of manufacturing a semiconductor device, which comprises forming a film containing metal elements and silicon elements on a semiconductor substrate, exposing the semiconductor substrate to an atmosphere containing an oxidant to form a silicon dioxide film at the interface between the semiconductor substrate and the film containing metal elements and silicon elements, and nitriding the film containing metal elements and silicon elements after forming the silicon dioxide film.
摘要翻译: 公开了一种制造半导体器件的方法,其包括在半导体衬底上形成含有金属元素和硅元素的膜,将半导体衬底暴露于含有氧化剂的气氛中,以在半导体衬底之间的界面处形成二氧化硅膜 并且所述膜含有金属元素和硅元素,并且在形成二氧化硅膜之后氮化包含金属元素和硅元素的膜。
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