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    Flat type dielectric filter
    1.
    发明授权
    Flat type dielectric filter 失效
    平面型介质滤波器

    公开(公告)号：US5248949A

    公开(公告)日：1993-09-28

    申请号：US850279

    申请日：1992-03-12

    申请人： Kazuhiro Eguchi ,  Fumio Fukushima ,  Koji Nishimura ,  Katsumi Sasaki ,  Takehiko Yoneda ,  Hiromitsu Taki

    发明人： Kazuhiro Eguchi ,  Fumio Fukushima ,  Koji Nishimura ,  Katsumi Sasaki ,  Takehiko Yoneda ,  Hiromitsu Taki

    IPC分类号： H01P1/203 ,  H01P1/205 ,  H01P1/212 ,  H01P5/08 ,  H01P11/00

    CPC分类号： H01P1/20345

    摘要： A flat type dielectric filter comprises a substantially U-shaped strip line formed such that each center frequency of spurious output deviates from each odd number frequency times the center frequency of the dielectric filter. That is, it comprises a first portion so curved to form an open loop and two second portions formed to have a larger width than the first portion, each of the second portions being provided to an end of the first portion such that each extends in the opposite direction to the other. In this filter, input/output electrodes confronting ends of U-shaped strip line can be formed on a different layer from the layer where the resonator is formed in order to reduce its size. Reduction of size can be obtained by vertically folding the U-shaped strip line extending horizontally. Terminals of this filter formed on the side surface have a first layer formed on the side surface and a second layer formed on the first layer. The first layer is made of silver, the second layer nickel, or the first layer copper, the second layer solder. This filter has two conducting plates sandwiching dielectric substrates including each resonator, the conducting plate being coated with a epoxy resin or dielectric substance.

    摘要翻译： 扁平型介质滤波器包括基本上U形的带状线，其形成为使得杂散输出的每个中心频率偏离每个奇数频率乘以介质滤波器的中心频率。 也就是说，它包括弯曲形成开环的第一部分和形成为具有比第一部分更大的宽度的两个第二部分，每个第二部分设置在第一部分的端部，使得每个在 与另一方相反。 在该滤波器中，可以在与形成谐振器的层不同的层上形成面对U字形带状线的端部的输入/输出电极，以减小其尺寸。 可以通过垂直折叠水平延伸的U形带状线来获得尺寸的减小。 形成在侧面上的该过滤器的端子具有形成在侧表面上的第一层和形成在第一层上的第二层。 第一层由银制成，第二层为镍，或第一层为铜，第二层为焊料。 该过滤器具有两个导电板，夹持包括每个谐振器的电介质基片，该导电板涂覆有环氧树脂或介电材料。

    High-frequency filter having increased mechanical strength
    3.
    发明授权
    High-frequency filter having increased mechanical strength 失效
    高频滤波器具有增加的机械强度

    公开(公告)号：US5276412A

    公开(公告)日：1994-01-04

    申请号：US890424

    申请日：1992-05-29

    申请人： Takehiko Yoneda ,  Kazuhiro Eguchi ,  Hiromitsu Taki

    发明人： Takehiko Yoneda ,  Kazuhiro Eguchi ,  Hiromitsu Taki

    IPC分类号： C01G25/00 ,  C04B35/48 ,  H01B3/12 ,  H01P1/205 ,  H01P7/10 ,  H01P11/00 ,  H01P1/201

    CPC分类号： H01P1/2053

    摘要： A high-frequency filter of the type having a plurality of resonators open at least at one end thereof, a dielectric board forming an input/output coupling and an interstage coupling, and a case for holding therein the resonators and the dielectric board, wherein the dielectric board is made of a ceramic having a critical stress intensity factor K.sub.1c of not less than 5 MPa.multidot.m.sup.1/2 and a dielectric dissipation factor tan. .delta. of not exceeding 1% in a working frequency band of said high-frequency filter, and wherein electrodes are provided on the dielectric board to form an input/output coupling capacity and an interstage coupling capacity. The high-frequency filter of the foregoing construction has the advantage of an excellent mechanical strength which is capable of withstanding severe mechanical loads such as falling impacts or various stresses.

    摘要翻译： 一种高频滤波器，其具有至少在其一端开放的多个谐振器，形成输入/输出耦合的介质板和级间耦合，以及用于保持谐振器和电介质板的壳体，其中， 电介质板由具有不小于5MPa * m1 / 2的临界应力强度因子K1c和介电损耗因数tan的陶瓷制成。 （delta）在所述高频滤波器的工作频带中不超过1％，并且其中电极设置在电介质板上以形成输入/输出耦合能力和级间耦合能力。 上述结构的高频过滤器具有优异的机械强度的优点，其能够承受严重的机械负载，例如落下的冲击或各种应力。

    Dielectric filter having inductive input/output coupling
    4.
    发明授权
    Dielectric filter having inductive input/output coupling 失效
    具有电感输入/输出耦合的介质滤波器

    公开(公告)号：US5239280A

    公开(公告)日：1993-08-24

    申请号：US739271

    申请日：1991-08-01

    申请人： Toshiharu Noguchi ,  Kazuhiro Eguchi ,  Takumi Naruse ,  Kouichi Watanabe ,  Kuniaki Kiyosue ,  Hiromitsu Taki

    发明人： Toshiharu Noguchi ,  Kazuhiro Eguchi ,  Takumi Naruse ,  Kouichi Watanabe ,  Kuniaki Kiyosue ,  Hiromitsu Taki

    IPC分类号： H01P1/205

    CPC分类号： H01P1/2056

    摘要： A dielectric filter including a plurality of coaxial type dielectric resonators having outer conductors and inner conductors is arranged so that the outer conductors are connected to each other. Also included in the dielectric filter are central conductors arranged to be brought into contact with the inner conductors of said plurality of coaxial type dielectric resonators and a dielectric substrate having thereon a plurality of substrate conductors whose number at least corresponds to the number of the plurality of coaxial type dielectric resonators, and input/output terminals provided on said dielectric substrate. The central conductors are respectively coupled to the substrate conductors provided on the dielectric substrate and inductance elements are connected to the substrate conductors which are positioned at both sides.

    摘要翻译： 包括具有外部导体和内部导体的多个同轴型介质谐振器的介质滤波器被布置成使得外部导体彼此连接。 还包括在介质滤波器中的中心导体被布置成与所述多个同轴型介质谐振器的内导体接触，并且其上具有多个基板导体的电介质基板，其数量至少对应于多个 同轴型介质谐振器和设置在所述电介质基板上的输入/输出端子。 中心导体分别耦合到设置在电介质基板上的基板导体，并且电感元件连接到位于两侧的基板导体。

    Circuit component
    5.
    发明授权
    Circuit component 失效
    电路元件

    公开(公告)号：US06765805B2

    公开(公告)日：2004-07-20

    申请号：US09970355

    申请日：2001-10-03

    申请人： Takumi Naruse ,  Kenichi Kozaki ,  Kazuhiro Eguchi ,  Katsumi Sasaki

    发明人： Takumi Naruse ,  Kenichi Kozaki ,  Kazuhiro Eguchi ,  Katsumi Sasaki

    IPC分类号： H05K111

    CPC分类号： H01R12/57 ,  H01P1/00 ,  H01P1/2053 ,  H01R12/52 ,  H01R12/718 ,  H01R12/721 ,  H05K3/3405 ,  H05K3/3426 ,  H05K3/368 ,  H05K2201/10386 ,  H05K2201/10757 ,  H05K2201/10772 ,  Y02P70/613

    摘要： A circuit component comprising a circuit board and a terminal for mounting the circuit board on a second circuit board. A length of the circuit board is 10 mm-80 mm, a difference in a coefficient of thermal expansion between the circuit board and the second circuit board is 0.2×10−5/° C. or greater. The terminal is made of an elastic material, and comprised of a first connection section, a second connection section and an elastic section disposed between the first and second connection sections, and the terminal separates the circuit board from the second circuit board by 0.3 mm-5 mm. In the circuit components of the present invention, deterioration in the conduction between the circuit board and the second circuit board due to heat cycles can be prevented. Thus, a circuit component having stable operating characteristics for a long period of time is obtained.

    摘要翻译： 一种电路部件，包括电路板和用于将电路板安装在第二电路板上的端子。 电路板的长度为10mm-80mm，电路板和第二电路板之间的热膨胀系数的差为0.2×10 -5 /℃或更高。 端子由弹性材料制成，包括第一连接部分，第二连接部分和布置在第一和第二连接部分之间的弹性部分，并且端子将电路板与第二电路板分开0.3mm- 5毫米。 在本发明的电路部件中，可以防止由于热循环导致的电路板和第二电路板之间的导通性的恶化。 因此，获得长时间具有稳定的工作特性的电路部件。

    Filter
    6.
    发明授权
    Filter 有权
    过滤

    公开(公告)号：US06621378B2

    公开(公告)日：2003-09-16

    申请号：US09879018

    申请日：2001-06-12

    申请人： Takumi Naruse ,  Kuniaki Kiyosue ,  Hiromi Sakita ,  Kenzo Isozaki ,  Kazuhiro Eguchi ,  Katsumi Sasaki

    发明人： Takumi Naruse ,  Kuniaki Kiyosue ,  Hiromi Sakita ,  Kenzo Isozaki ,  Kazuhiro Eguchi ,  Katsumi Sasaki

    IPC分类号： H03H701

    CPC分类号： H03H7/1766 ,  H03H7/0115 ,  H03H2001/0085

    摘要： A filter includes a substrate with a relative dielectric constant of 200 or less and a thickness of 0.1 mm or more. A first electrode is disposed on at least one surface of the substrate, a group of second electrodes is disposed on at least the other surface of the substrate. Each of the second electrodes is not in contact with each other and is not in contact with the first electrode. The filter also includes a chip type inductance element. The chip type inductance element has an inductance ranging from 0.1 nH to 30 nH and has dimensions of L1 in length, L2 in width and L3 in height, which satisfy the following conditions; 0.3 mm

    摘要翻译： 滤波器包括相对介电常数为200以下且厚度为0.1mm以上的基板。 第一电极设置在衬底的至少一个表面上，一组第二电极设置在衬底的至少另一个表面上。 每个第二电极彼此不接触并且不与第一电极接触。 滤波器还包括片式电感元件。 芯片型电感元件的电感范围为0.1 nH〜30 nH，尺寸为L1长度，L2宽，L3高，满足以下条件：

    Semiconductor device and method of fabricating the same
    7.
    发明申请
    Semiconductor device and method of fabricating the same 审中-公开
    半导体装置及其制造方法

    公开(公告)号：US20100003813A1

    公开(公告)日：2010-01-07

    申请号：US12585334

    申请日：2009-09-11

    申请人： Katsuyuki Sekine ,  Akio Kaneko ,  Motoyuki Sato ,  Seiji Inumiya ,  Kazuhiro Eguchi

    发明人： Katsuyuki Sekine ,  Akio Kaneko ,  Motoyuki Sato ,  Seiji Inumiya ,  Kazuhiro Eguchi

    IPC分类号： H01L21/28

    CPC分类号： C23C16/401 ,  C23C16/56 ,  H01L21/02329 ,  H01L21/3145

    摘要： According to the present invention, there is provided a semiconductor device comprising: a gate insulating film selectively formed on a predetermined region of a semiconductor substrate; a gate electrode formed on said gate insulating film; and a source region and drain region formed, in a surface portion of said semiconductor substrate, on two sides of a channel region positioned below said gate electrode, wherein a carbon concentration in an interface where said gate insulating film is in contact with said gate electrode is not more than 5×1022 atoms/cm3.

    摘要翻译： 根据本发明，提供了一种半导体器件，包括：选择性地形成在半导体衬底的预定区域上的栅极绝缘膜; 形成在所述栅极绝缘膜上的栅电极; 以及在所述半导体衬底的表面部分中形成在位于所述栅极电极下方的沟道区域的两侧上的源极区和漏极区，其中所述栅极绝缘膜与所述栅电极接触的界面中的碳浓度 不大于5×1022原子/ cm3。

    Method of manufacturing semiconductor device
    8.
    发明授权
    Method of manufacturing semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US07091135B2

    公开(公告)日：2006-08-15

    申请号：US10798337

    申请日：2004-03-12

    申请人： Seiji Inumiya ,  Kazuhiro Eguchi

    发明人： Seiji Inumiya ,  Kazuhiro Eguchi

    IPC分类号： H01L21/31

    CPC分类号： H01L21/28202 ,  H01L21/2807 ,  H01L29/513 ,  H01L29/518 ,  H01L29/665 ,  H01L29/6659 ,  H01L29/7833

    摘要： There is disclosed a method of manufacturing a semiconductor device, which comprises forming a film containing metal elements and silicon elements on a semiconductor substrate, exposing the semiconductor substrate to an atmosphere containing an oxidant to form a silicon dioxide film at the interface between the semiconductor substrate and the film containing metal elements and silicon elements, and nitriding the film containing metal elements and silicon elements after forming the silicon dioxide film.

    摘要翻译： 公开了一种制造半导体器件的方法，其包括在半导体衬底上形成含有金属元素和硅元素的膜，将半导体衬底暴露于含有氧化剂的气氛中，以在半导体衬底之间的界面处形成二氧化硅膜 并且所述膜含有金属元素和硅元素，并且在形成二氧化硅膜之后氮化包含金属元素和硅元素的膜。

    Method of manufacturing a perovskite thin film dielectric
    10.
    发明授权
    Method of manufacturing a perovskite thin film dielectric 失效
    钙钛矿薄膜电介质的制造方法

    公开(公告)号：US5618761A

    公开(公告)日：1997-04-08

    申请号：US526387

    申请日：1995-09-11

    申请人： Kazuhiro Eguchi ,  Masahiro Kiyotoshi ,  Keitaro Imai

    发明人： Kazuhiro Eguchi ,  Masahiro Kiyotoshi ,  Keitaro Imai

    IPC分类号： H01L21/205 ,  H01L21/02 ,  H01L21/314 ,  H01L21/316 ,  H01L21/8242 ,  H01L27/108

    CPC分类号： H01L27/10852 ,  H01L27/10861 ,  H01L28/55

    摘要： Disclosed is a method of manufacturing a semiconductor device, comprising the step of forming a dielectric thin film on a semiconductor layer, the dielectric thin film being made of a compound represented by the general formula (1) given below:ABO.sub.3 (1)where "A" is at least one element selected from the group consisting of Ca, Ba, Sr, Pb and La, and "B" is at least one element selected from the group consisting of Zr and Ti,The dielectric thin film being formed by a chemical vapor deposition under a pressure of 400 Torr or less and a temperature of 1,000.degree. C. or less by using a raw material gas containing a complex compound of element A with a .beta.-diketone, a complex compound of element B with a .beta.-diketone, and an oxidizing agent.

    摘要翻译： 公开了一种制造半导体器件的方法，包括在半导体层上形成电介质薄膜的步骤，所述电介质薄膜由以下给出的通式（1）表示的化合物制成：ABO3（1）其中“ A“是选自Ca，Ba，Sr，Pb和La中的至少一种元素，”B“是选自Zr和Ti中的至少一种元素。电介质薄膜由 通过使用含有元素A的配位化合物与β-二酮的原料气体，元素B与β-二酮的络合物，在400Torr以下的压力和1000℃以下的温度下进行化学气相沉积， 二酮和氧化剂。