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    Dielectric filter
    1.
    发明授权
    Dielectric filter 失效
    介质过滤器

    公开(公告)号：US5818312A

    公开(公告)日：1998-10-06

    申请号：US511238

    申请日：1995-08-04

    申请人： Toshiharu Noguchi ,  Kazuhiro Eguchi ,  Hiroshi Ohno

    发明人： Toshiharu Noguchi ,  Kazuhiro Eguchi ,  Hiroshi Ohno

    IPC分类号： H01P1/205

    CPC分类号： H01P1/2056 ,  H01P1/2053

    摘要： A dielectric filter includes two dielectric resonators each having a dielectric base body including first, second, third and fourth side surfaces and first and second end surfaces. A through hole is provided from the first end surface to the second end surface to define an inner surface. An outer conductor is located on and partially covers the four side surfaces. Uncovered portions of the second and third side surfaces are provided that are adjacent to each other and bounded by the outer conductor in three directions. An uncovered portion of the fourth side surface is adjacent to an uncovered portion of the first side surface and the first end surface, and is separated from the third side surface by the outer conductor. An inner conductor is located on the inner surface. A connection conductor is also located on the second end surface and connects the inner conductor to the outer conductor. An interstage coupling electrode is located on the uncovered portion of the first side surface. An area of the uncovered portion of the first side surface extends in at least three directions from the interstage coupling electrode and separates the interstage coupling electrode from the outer conductor. An input/output coupling electrode is located on the uncovered portion of the second and third side surfaces. Areas of the uncovered portions of the second and third side surfaces extend in three directions from the input/output coupling electrode and separate the input/output coupling electrode from the outer conductor. The the outer conductor of a first dielectric resonator is electrically connected to the outer conductor of a second dielectric resonator.

    摘要翻译： 介质滤波器包括两个介质谐振器，每个介质谐振器具有包括第一，第二，第三和第四侧面以及第一和第二端面的电介质基体。 从第一端面到第二端面设有通孔，以形成内表面。 外部导体位于并部分地覆盖四个侧表面。 第二和第三侧表面的未覆盖部分被设置成彼此相邻并且在三个方向上由外部导体限定。 第四侧表面的未覆盖部分与第一侧表面和第一端表面的未覆盖部分相邻，并且通过外导体与第三侧表面分离。 内导体位于内表面。 连接导体也位于第二端面上，并将内部导体连接到外部导体。 级间耦合电极位于第一侧表面的未覆盖部分上。 第一侧表面的未覆盖部分的区域从级间耦合电极至少沿三个方向延伸，并将级间耦合电极与外部导体分开。 输入/输出耦合电极位于第二和第三侧表面的未覆盖部分上。 第二和第三侧面的未覆盖部分的区域从输入/输出耦合电极在三个方向上延伸，并将输入/输出耦合电极与外部导体分开。 第一介电谐振器的外导体电连接到第二介质谐振器的外导体。

    Dielectric filter having interstage coupling using adjacent electrodes
    2.
    发明授权
    Dielectric filter having interstage coupling using adjacent electrodes 失效
    介质滤波器具有使用相邻电极的级间耦合

    公开(公告)号：US5499004A

    公开(公告)日：1996-03-12

    申请号：US202073

    申请日：1994-02-25

    申请人： Toshiharu Noguchi ,  Kazuhiro Eguchi ,  Hiroshi Ohno

    发明人： Toshiharu Noguchi ,  Kazuhiro Eguchi ,  Hiroshi Ohno

    IPC分类号： H01P1/205

    CPC分类号： H01P1/2056 ,  H01P1/2053

    摘要： A dielectric filter comprises a pair of dielectric resonators 11 and 12, which have outer conductors 11c and 12c formed with cutouts 11k and 12k, respectively. Interstage coupling electrodes 11f and 12f are provided within the region of these cutouts 11k and 12k, so that the electrodes 11f and 12f do not contact with the conductors, such as outer conductors 11c, 12c and the inner conductors 11d, 12d. The dielectric resonators are connected in such a manner that these electrodes 11f and 12f are brought into contact with each other. Furthermore, input/output coupling electrodes 11g and 12g are provided within the region of the cutouts 11k and 12k. Then, by connecting the electrodes 11f and 12f, it becomes possible to provide a dielectric filter which is compact in size and capable of reducing the number of parts and, therefore, cheap in cost.

    摘要翻译： 介质滤波器包括一对介质谐振器11和12，它们分别具有形成有切口11k和12k的外导体11c和12c。 级间耦合电极11f和12f设置在这些切口11k和12k的区域内，使得电极11f和12f不与外导体11c，12c和内导体11d，12d等导体接触。 介质谐振器以使得这些电极11f和12f彼此接触的方式连接。 此外，输入/输出耦合电极11g和12g设置在切口11k和12k的区域内。 然后，通过连接电极11f和12f，可以提供尺寸紧凑并且能够减少部件数量并因此成本低廉的介质滤波器。

    Dielectric filter having inductive input/output coupling
    5.
    发明授权
    Dielectric filter having inductive input/output coupling 失效
    具有电感输入/输出耦合的介质滤波器

    公开(公告)号：US5239280A

    公开(公告)日：1993-08-24

    申请号：US739271

    申请日：1991-08-01

    申请人： Toshiharu Noguchi ,  Kazuhiro Eguchi ,  Takumi Naruse ,  Kouichi Watanabe ,  Kuniaki Kiyosue ,  Hiromitsu Taki

    发明人： Toshiharu Noguchi ,  Kazuhiro Eguchi ,  Takumi Naruse ,  Kouichi Watanabe ,  Kuniaki Kiyosue ,  Hiromitsu Taki

    IPC分类号： H01P1/205

    CPC分类号： H01P1/2056

    摘要： A dielectric filter including a plurality of coaxial type dielectric resonators having outer conductors and inner conductors is arranged so that the outer conductors are connected to each other. Also included in the dielectric filter are central conductors arranged to be brought into contact with the inner conductors of said plurality of coaxial type dielectric resonators and a dielectric substrate having thereon a plurality of substrate conductors whose number at least corresponds to the number of the plurality of coaxial type dielectric resonators, and input/output terminals provided on said dielectric substrate. The central conductors are respectively coupled to the substrate conductors provided on the dielectric substrate and inductance elements are connected to the substrate conductors which are positioned at both sides.

    摘要翻译： 包括具有外部导体和内部导体的多个同轴型介质谐振器的介质滤波器被布置成使得外部导体彼此连接。 还包括在介质滤波器中的中心导体被布置成与所述多个同轴型介质谐振器的内导体接触，并且其上具有多个基板导体的电介质基板，其数量至少对应于多个 同轴型介质谐振器和设置在所述电介质基板上的输入/输出端子。 中心导体分别耦合到设置在电介质基板上的基板导体，并且电感元件连接到位于两侧的基板导体。

    Semiconductor device and method of fabricating the same
    6.
    发明申请
    Semiconductor device and method of fabricating the same 审中-公开
    半导体装置及其制造方法

    公开(公告)号：US20100003813A1

    公开(公告)日：2010-01-07

    申请号：US12585334

    申请日：2009-09-11

    申请人： Katsuyuki Sekine ,  Akio Kaneko ,  Motoyuki Sato ,  Seiji Inumiya ,  Kazuhiro Eguchi

    发明人： Katsuyuki Sekine ,  Akio Kaneko ,  Motoyuki Sato ,  Seiji Inumiya ,  Kazuhiro Eguchi

    IPC分类号： H01L21/28

    CPC分类号： C23C16/401 ,  C23C16/56 ,  H01L21/02329 ,  H01L21/3145

    摘要： According to the present invention, there is provided a semiconductor device comprising: a gate insulating film selectively formed on a predetermined region of a semiconductor substrate; a gate electrode formed on said gate insulating film; and a source region and drain region formed, in a surface portion of said semiconductor substrate, on two sides of a channel region positioned below said gate electrode, wherein a carbon concentration in an interface where said gate insulating film is in contact with said gate electrode is not more than 5×1022 atoms/cm3.

    摘要翻译： 根据本发明，提供了一种半导体器件，包括：选择性地形成在半导体衬底的预定区域上的栅极绝缘膜; 形成在所述栅极绝缘膜上的栅电极; 以及在所述半导体衬底的表面部分中形成在位于所述栅极电极下方的沟道区域的两侧上的源极区和漏极区，其中所述栅极绝缘膜与所述栅电极接触的界面中的碳浓度 不大于5×1022原子/ cm3。

    Method of manufacturing semiconductor device
    7.
    发明授权
    Method of manufacturing semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US07091135B2

    公开(公告)日：2006-08-15

    申请号：US10798337

    申请日：2004-03-12

    申请人： Seiji Inumiya ,  Kazuhiro Eguchi

    发明人： Seiji Inumiya ,  Kazuhiro Eguchi

    IPC分类号： H01L21/31

    CPC分类号： H01L21/28202 ,  H01L21/2807 ,  H01L29/513 ,  H01L29/518 ,  H01L29/665 ,  H01L29/6659 ,  H01L29/7833

    摘要： There is disclosed a method of manufacturing a semiconductor device, which comprises forming a film containing metal elements and silicon elements on a semiconductor substrate, exposing the semiconductor substrate to an atmosphere containing an oxidant to form a silicon dioxide film at the interface between the semiconductor substrate and the film containing metal elements and silicon elements, and nitriding the film containing metal elements and silicon elements after forming the silicon dioxide film.

    摘要翻译： 公开了一种制造半导体器件的方法，其包括在半导体衬底上形成含有金属元素和硅元素的膜，将半导体衬底暴露于含有氧化剂的气氛中，以在半导体衬底之间的界面处形成二氧化硅膜 并且所述膜含有金属元素和硅元素，并且在形成二氧化硅膜之后氮化包含金属元素和硅元素的膜。

    Circuit component
    8.
    发明授权
    Circuit component 失效
    电路元件

    公开(公告)号：US06765805B2

    公开(公告)日：2004-07-20

    申请号：US09970355

    申请日：2001-10-03

    申请人： Takumi Naruse ,  Kenichi Kozaki ,  Kazuhiro Eguchi ,  Katsumi Sasaki

    发明人： Takumi Naruse ,  Kenichi Kozaki ,  Kazuhiro Eguchi ,  Katsumi Sasaki

    IPC分类号： H05K111

    CPC分类号： H01R12/57 ,  H01P1/00 ,  H01P1/2053 ,  H01R12/52 ,  H01R12/718 ,  H01R12/721 ,  H05K3/3405 ,  H05K3/3426 ,  H05K3/368 ,  H05K2201/10386 ,  H05K2201/10757 ,  H05K2201/10772 ,  Y02P70/613

    摘要： A circuit component comprising a circuit board and a terminal for mounting the circuit board on a second circuit board. A length of the circuit board is 10 mm-80 mm, a difference in a coefficient of thermal expansion between the circuit board and the second circuit board is 0.2×10−5/° C. or greater. The terminal is made of an elastic material, and comprised of a first connection section, a second connection section and an elastic section disposed between the first and second connection sections, and the terminal separates the circuit board from the second circuit board by 0.3 mm-5 mm. In the circuit components of the present invention, deterioration in the conduction between the circuit board and the second circuit board due to heat cycles can be prevented. Thus, a circuit component having stable operating characteristics for a long period of time is obtained.

    摘要翻译： 一种电路部件，包括电路板和用于将电路板安装在第二电路板上的端子。 电路板的长度为10mm-80mm，电路板和第二电路板之间的热膨胀系数的差为0.2×10 -5 /℃或更高。 端子由弹性材料制成，包括第一连接部分，第二连接部分和布置在第一和第二连接部分之间的弹性部分，并且端子将电路板与第二电路板分开0.3mm- 5毫米。 在本发明的电路部件中，可以防止由于热循环导致的电路板和第二电路板之间的导通性的恶化。 因此，获得长时间具有稳定的工作特性的电路部件。

    Method of manufacturing a perovskite thin film dielectric
    10.
    发明授权
    Method of manufacturing a perovskite thin film dielectric 失效
    钙钛矿薄膜电介质的制造方法

    公开(公告)号：US5618761A

    公开(公告)日：1997-04-08

    申请号：US526387

    申请日：1995-09-11

    申请人： Kazuhiro Eguchi ,  Masahiro Kiyotoshi ,  Keitaro Imai

    发明人： Kazuhiro Eguchi ,  Masahiro Kiyotoshi ,  Keitaro Imai

    IPC分类号： H01L21/205 ,  H01L21/02 ,  H01L21/314 ,  H01L21/316 ,  H01L21/8242 ,  H01L27/108

    CPC分类号： H01L27/10852 ,  H01L27/10861 ,  H01L28/55

    摘要： Disclosed is a method of manufacturing a semiconductor device, comprising the step of forming a dielectric thin film on a semiconductor layer, the dielectric thin film being made of a compound represented by the general formula (1) given below:ABO.sub.3 (1)where "A" is at least one element selected from the group consisting of Ca, Ba, Sr, Pb and La, and "B" is at least one element selected from the group consisting of Zr and Ti,The dielectric thin film being formed by a chemical vapor deposition under a pressure of 400 Torr or less and a temperature of 1,000.degree. C. or less by using a raw material gas containing a complex compound of element A with a .beta.-diketone, a complex compound of element B with a .beta.-diketone, and an oxidizing agent.

    摘要翻译： 公开了一种制造半导体器件的方法，包括在半导体层上形成电介质薄膜的步骤，所述电介质薄膜由以下给出的通式（1）表示的化合物制成：ABO3（1）其中“ A“是选自Ca，Ba，Sr，Pb和La中的至少一种元素，”B“是选自Zr和Ti中的至少一种元素。电介质薄膜由 通过使用含有元素A的配位化合物与β-二酮的原料气体，元素B与β-二酮的络合物，在400Torr以下的压力和1000℃以下的温度下进行化学气相沉积， 二酮和氧化剂。