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公开(公告)号：US20120288796A1
公开(公告)日：2012-11-15
申请号：US13469929
申请日：2012-05-11
CPC分类号： G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/11 , G03F7/2041 , G03F7/325
摘要： A resist composition is provided comprising a polymer comprising recurring units having a hydroxyl group substituted with an acid labile group, an onium salt PAG capable of generating a sulfonic acid, imide acid or methide acid, and an onium salt PAG capable of generating a carboxylic acid. A resist film of the composition is improved in dissolution contrast during organic solvent development, and from which a hole pattern having minimized nano-edge roughness can be formed via positive/negative reversal.
摘要翻译： 提供了一种抗蚀剂组合物，其包含聚合物，其包含具有被酸不稳定基团取代的羟基的重复单元，能够产生磺酸的鎓盐PAG，酰亚胺酸或甲基化酸，以及能够产生羧酸的鎓盐PAG 。 组合物的抗蚀剂膜在有机溶剂显影期间的溶解对比度得到改善，并且可以通过正/负反转形成具有最小化的纳米边缘粗糙度的孔图案。
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公开(公告)号：US20100304297A1
公开(公告)日：2010-12-02
申请号：US12787823
申请日：2010-05-26
CPC分类号： G03F7/70466 , G03F7/0035 , G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/2041 , G03F7/38 , G03F7/40 , Y10S430/108 , Y10S430/111
摘要： A pattern is formed by coating a first positive resist composition comprising a base resin, a photoacid generator, and a base generator onto a substrate to form a first resist film, patternwise exposure, PEB, and development to form a first resist pattern, heating the first resist pattern for causing the base generator to generate a base for inactivating the pattern to acid, coating a second positive resist composition comprising a C3-C8 alcohol and an optional C6-C12 ether onto the first resist pattern-bearing substrate to form a second resist film, patternwise exposure, PEB, and development to form a second resist pattern.
摘要翻译： 通过将包含基础树脂，光致酸发生剂和基底发生器的第一正型抗蚀剂组合物涂覆在基材上以形成第一抗蚀剂膜，图案曝光，PEB和显影以形成第一抗蚀剂图案，形成图案，加热 第一抗蚀剂图案，用于使基底发生器产生用于使图案失去酸的碱，将包含C 3 -C 8醇和任选的C 6 -C 12醚的第二正性抗蚀剂组合物涂覆到第一抗蚀剂图案衬底上以形成第二抗蚀剂图案 抗蚀剂膜，图案曝光，PEB和显影以形成第二抗蚀剂图案。
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公开(公告)号：US20090226843A1
公开(公告)日：2009-09-10
申请号：US12398483
申请日：2009-03-05
IPC分类号： G03F7/20 , G03F7/004 , C08F120/10
CPC分类号： G03F7/40 , G03F7/0046 , G03F7/0397
摘要： A pattern is formed by applying a positive resist composition comprising a polymer comprising hydroxyalkylnaphthalene-bearing recurring units and acid labile group-bearing recurring units onto a substrate to form a resist film, heat treating and exposing the resist film to radiation, heat treating and developing the resist film with a developer to form a first pattern, and causing the resist film to crosslink and cure with the aid of heat or of acid and heat. A second pattern is then formed in the space area of the first pattern. The double patterning process reduces the pitch between patterns to one half.
摘要翻译： 通过将包含含有羟烷基萘的重复单元和含酸不稳定基团的重复单元的聚合物的正性抗蚀剂组合物应用到基材上以形成抗蚀剂膜，将抗蚀剂膜热处理和曝光以进行辐射，热处理和显影而形成图案 所述抗蚀剂膜具有显影剂以形成第一图案，并且使得所述抗蚀剂膜在热或酸和热的帮助下交联和固化。 然后在第一图案的空间区域中形成第二图案。 双重图案化工艺将图案之间的间距缩小到一半。
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公开(公告)号：US20090208886A1
公开(公告)日：2009-08-20
申请号：US12370901
申请日：2009-02-13
IPC分类号： G03F7/20
CPC分类号： H01L21/0337 , G03F7/0035 , G03F7/0046 , G03F7/0397 , G03F7/0757 , G03F7/11 , G03F7/40 , H01L21/0338
摘要： Double patterns are formed by coating a first chemically amplified positive resist composition comprising an acid labile group-bearing resin and a photoacid generator and prebaking to form a resist film on a processable substrate, exposing the resist film to high-energy radiation, PEB, and developing with an alkaline developer to form a first positive resist pattern, treating the first resist pattern to be alkali soluble and solvent resistant, coating a second resist composition and prebaking to form a reversal film, and exposing the reversal film to high-energy radiation, PEB, and developing with an alkaline developer to form a second positive resist pattern. The last development step includes dissolving away the reversed first resist pattern and achieving reversal transfer.
摘要翻译： 通过涂布第一化学放大的正型抗蚀剂组合物形成双重图案，该组合物包含含酸不稳定基团的树脂和光酸产生剂，并且预烘烤以在可加工的基材上形成抗蚀剂膜，将抗蚀剂膜暴露于高能辐射，PEB和 用碱性显影剂显影以形成第一正性抗蚀剂图案，将第一抗蚀剂图案处理为碱溶性和耐溶剂性，涂覆第二抗蚀剂组合物和预烘烤以形成反转膜，并将反转膜暴露于高能量辐射， PEB，并用碱性显影剂显影以形成第二正性抗蚀剂图案。 最后的发展步骤包括将反转的第一抗蚀剂图案溶解并实现反转印。
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公开(公告)号：US20090053657A1
公开(公告)日：2009-02-26
申请号：US12195787
申请日：2008-08-21
IPC分类号： G03F7/20 , C08F220/22 , C08L33/16
CPC分类号： G03F7/0035 , C09D133/066 , G03F7/40 , H01L21/0337
摘要： A pattern is formed by applying a first positive resist composition comprising a polymer comprising recurring units which become alkali soluble under the action of acid onto a substrate to form a first resist coating, heat treating, exposing, heat treating, developing to form a first resist pattern, applying a pattern surface coating composition comprising a hydroxyl-containing crosslinkable polymer onto the first resist pattern and crosslinking, thereby covering the first resist pattern with a crosslinked polymer film, applying a second positive resist composition thereon, heat treating, exposing, heat treating, and developing to form a second resist pattern.
摘要翻译： 通过在第一抗蚀剂涂层上涂覆第一正性抗蚀剂组合物，形成第一抗蚀剂组合物，形成第一抗蚀剂涂层，热处理，曝光，热处理，显影以形成第一抗蚀剂，形成包含聚合物的第一正性抗蚀剂组合物， 将包含含羟基的可交联聚合物的图案表面涂料组合物施加到第一抗蚀剂图案上并交联，从而用交联聚合物膜覆盖第一抗蚀剂图案，在其上施加第二正性抗蚀剂组合物，热处理，曝光，热处理 并且显影以形成第二抗蚀剂图案。
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