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公开(公告)号：US20120288796A1
公开(公告)日：2012-11-15
申请号：US13469929
申请日：2012-05-11
CPC分类号： G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/11 , G03F7/2041 , G03F7/325
摘要： A resist composition is provided comprising a polymer comprising recurring units having a hydroxyl group substituted with an acid labile group, an onium salt PAG capable of generating a sulfonic acid, imide acid or methide acid, and an onium salt PAG capable of generating a carboxylic acid. A resist film of the composition is improved in dissolution contrast during organic solvent development, and from which a hole pattern having minimized nano-edge roughness can be formed via positive/negative reversal.
摘要翻译： 提供了一种抗蚀剂组合物，其包含聚合物，其包含具有被酸不稳定基团取代的羟基的重复单元，能够产生磺酸的鎓盐PAG，酰亚胺酸或甲基化酸，以及能够产生羧酸的鎓盐PAG 。 组合物的抗蚀剂膜在有机溶剂显影期间的溶解对比度得到改善，并且可以通过正/负反转形成具有最小化的纳米边缘粗糙度的孔图案。
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公开(公告)号：US07105267B2
公开(公告)日：2006-09-12
申请号：US10226286
申请日：2002-08-23
IPC分类号： G03F7/004
CPC分类号： G03F7/0045 , G03F7/0397 , G03F7/0758 , Y10S430/106 , Y10S430/108 , Y10S430/115 , Y10S430/122
摘要： In a resist composition comprising a base resin which is a high molecular weight structure free from an aromatic substituent group, a photoacid generator, and a solvent, the photoacid generator is a one capable of generating a perfluoroalkyl ether sulfonic acid. The resist composition has many advantages including excellent resolution, minimized size difference between isolated and densely packed patterns, and minimized line edge roughness.
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3.发明授权Photoacid generating compounds, chemically amplified positive resist materials, and pattern forming method 有权光生酸化合物，化学放大阳性抗蚀剂材料和图案形成方法公开(公告)号：US07303852B2
公开(公告)日：2007-12-04
申请号：US10375773
申请日：2003-02-27
CPC分类号： G03F7/0045 , C07C311/48 , C07D333/46 , C07D335/02 , G03F7/0392 , G03F7/0395 , G03F7/0397 , G03F7/0758 , Y10S430/106 , Y10S430/114 , Y10S430/115
摘要： The invention provides a high-resolution resist material comprising an acid generator that has high sensitivity and high resolution with respect to high-energy rays of 300 nm or less, has small line-edge roughness, and is superior in heat stability and in shelf stability, and provides a pattern forming method that uses this resist material. The invention further provides a chemically amplified positive resist material comprising a base resin, an acid generator and a solvent in which the acid generator generates an alkylimidic acid containing a fluorine group, and provides a pattern forming method comprising a step of applying the resist material to the substrate, a step of performing exposure to a high-energy ray of a wavelength of 300 nm or less through a photomask following heat treatment, and a step of performing development by a developing solution following heat treatment.
摘要翻译： 本发明提供了一种高分辨率抗蚀剂材料，其包括相对于300nm以下的高能量射线具有高灵敏度和高分辨率的酸发生剂，具有小的线边缘粗糙度，并且具有优异的热稳定性和储存稳定性 ，并提供使用该抗蚀剂材料的图案形成方法。 本发明还提供了一种化学放大正性抗蚀剂材料，其包括基础树脂，酸产生剂和其中酸产生剂产生含氟基团的亚烷基亚胺酸的溶剂，并且提供了图案形成方法，包括将抗蚀剂材料施加到 基板，通过热处理后的光掩模进行曝光于波长为300nm以下的高能射线的工序，以及通过热处理后的显影液进行显影的工序。
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公开(公告)号：US20120100486A1
公开(公告)日：2012-04-26
申请号：US13243204
申请日：2011-09-23
IPC分类号： G03F7/20 , C07J33/00 , C07D333/46
CPC分类号： C07D493/18 , C07D333/46 , C07D409/12 , C07J31/006 , C07J33/002 , G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/2041
摘要： A sulfonium salt of a naphthyltetrahydrothiophenium cation having a fluoroalkoxy chain with a specific anion is provided. The sulfonium salt is used as a photoacid generator to form a resist composition which when processed by immersion lithography, offers advantages of restrained dissolution in the immersion water and less pattern dependence or dark/bright bias.
摘要翻译： 提供了具有特定阴离子的氟烷氧基链的萘基四氢噻吩阳离子的锍盐。 锍盐用作光致酸发生剂以形成抗蚀剂组合物，当通过浸渍光刻加工时，提供了在浸水中抑制溶解和较少图案依赖性或暗/亮偏压的优点。
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5.发明授权Polymer, chemically amplified resist composition, and patterning process using said chemically amplified resist composition 有权聚合物，化学放大抗蚀剂组合物和使用所述化学放大抗蚀剂组合物的图案化工艺公开(公告)号：US08900793B2
公开(公告)日：2014-12-02
申请号：US13476700
申请日：2012-05-21
CPC分类号： G03F7/2041 , C08F24/00 , C08F220/38 , G03F7/0045 , G03F7/0397 , G03F7/11 , G03F7/30 , Y10S430/111
摘要： There is disclosed a polymer having a repeating unit shown by the following general formula (1). There can be, in a photolithography using a high energy beam such as an ArF excimer laser beam and an EUV as a light source, (1) a polymer that gives a resist composition having an appropriate adhesion with a substrate and being capable of forming a pattern having excellent resolution, especially an excellent rectangular pattern profile, (2) a chemically amplified resist composition containing the said polymer, and (3) a patterning process using the said chemically amplified resist composition.
摘要翻译： 公开了具有下述通式（1）所示的重复单元的聚合物。 在使用诸如ArF准分子激光束和EUV作为光源的高能量光束的光刻中可以存在：（1）提供具有与基板的适当粘合性并且能够形成 具有优异分辨率的图案，特别是优异的矩形图案，（2）含有所述聚合物的化学放大抗蚀剂组合物，和（3）使用所述化学放大抗蚀剂组合物的图案化工艺。
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公开(公告)号：US08597869B2
公开(公告)日：2013-12-03
申请号：US13243204
申请日：2011-09-23
CPC分类号： C07D493/18 , C07D333/46 , C07D409/12 , C07J31/006 , C07J33/002 , G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/2041
摘要： A sulfonium salt of a naphthyltetrahydrothiophenium cation having a fluoroalkoxy chain with a specific anion is provided. The sulfonium salt is used as a photoacid generator to form a resist composition which when processed by immersion lithography, offers advantages of restrained dissolution in the immersion water and less pattern dependence or dark/bright bias.
摘要翻译： 提供了具有特定阴离子的氟烷氧基链的萘基四氢噻吩阳离子的锍盐。 锍盐用作光致酸发生剂以形成抗蚀剂组合物，当通过浸渍光刻加工时，提供了在浸水中抑制溶解和较少图案依赖性或暗/亮偏压的优点。
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公开(公告)号：US20130052587A1
公开(公告)日：2013-02-28
申请号：US13586186
申请日：2012-08-15
CPC分类号： G03F7/0045 , G03F7/004 , G03F7/0046 , G03F7/0382 , G03F7/0397 , G03F7/325
摘要： A negative pattern is formed by coating a resist composition comprising a methylol-substituted urea, amide or urethane compound, a polymer comprising recurring units having an acid labile group-substituted hydroxyl group, and an acid generator onto a substrate, prebaking, exposing to high-energy radiation, and developing in an organic solvent developer such that the unexposed region of resist film is dissolved away and the exposed region of resist film is not dissolved. In image formation via positive/negative reversal by organic solvent development, the resist film is characterized by a high dissolution contrast between the unexposed and exposed regions.
摘要翻译： 通过将包含羟甲基取代的脲，酰胺或氨基甲酸酯化合物的抗蚀剂组合物，包含酸不稳定基取代的羟基的重复单元的聚合物和酸产生剂涂覆在基材上，预烘烤，暴露于高 能量辐射，并在有机溶剂显影剂中显影，使得抗蚀剂膜的未曝光区域被溶解并且抗蚀剂膜的曝光区域不溶解。 在通过有机溶剂显影的正/负反转的图像形成中，抗蚀剂膜的特征在于未曝光和曝光区域之间的高溶解度对比度。
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公开(公告)号：US08790866B2
公开(公告)日：2014-07-29
申请号：US13586186
申请日：2012-08-15
IPC分类号： G03F7/20
CPC分类号： G03F7/0045 , G03F7/004 , G03F7/0046 , G03F7/0382 , G03F7/0397 , G03F7/325
摘要： A negative pattern is formed by coating a resist composition comprising a methylol-substituted urea, amide or urethane compound, a polymer comprising recurring units having an acid labile group-substituted hydroxyl group, and an acid generator onto a substrate, prebaking, exposing to high-energy radiation, and developing in an organic solvent developer such that the unexposed region of resist film is dissolved away and the exposed region of resist film is not dissolved. In image formation via positive/negative reversal by organic solvent development, the resist film is characterized by a high dissolution contrast between the unexposed and exposed regions.
摘要翻译： 通过将包含羟甲基取代的脲，酰胺或氨基甲酸酯化合物的抗蚀剂组合物，包含酸不稳定基取代的羟基的重复单元的聚合物和酸产生剂涂覆在基材上，预烘烤，暴露于高 能量辐射，并在有机溶剂显影剂中显影，使得抗蚀剂膜的未曝光区域被溶解并且抗蚀剂膜的曝光区域不溶解。 在通过有机溶剂显影的正/负反转的图像形成中，抗蚀剂膜的特征在于未曝光和曝光区域之间的高溶解度对比度。
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公开(公告)号：US20130065183A1
公开(公告)日：2013-03-14
申请号：US13606297
申请日：2012-09-07
申请人： Tomohiro Kobayashi , Jun Hatakeyama , Masashi Iio , Yuuki Suka , Koji Hasegawa , Yuji Harada
发明人： Tomohiro Kobayashi , Jun Hatakeyama , Masashi Iio , Yuuki Suka , Koji Hasegawa , Yuji Harada
CPC分类号： G03F7/0046 , G03F7/0397 , G03F7/11 , G03F7/2041 , G03F7/325
摘要： A resist composition is provided comprising a polymer comprising recurring units having a protected hydroxyl group, a photoacid generator, an organic solvent, and a hydroxyl-free polymeric additive comprising fluorinated recurring units. A negative pattern is formed by coating the resist composition, prebaking to form a resist film, exposing, baking, and developing the exposed film in an organic solvent-based developer to selectively dissolve the unexposed region of resist film.
摘要翻译： 提供了抗蚀剂组合物，其包含聚合物，其包含具有被保护的羟基的重复单元，光致酸产生剂，有机溶剂和包含氟化重复单元的无羟基聚合物添加剂。 通过涂覆抗蚀剂组合物，预烘烤以形成抗蚀剂膜，在有机溶剂基显影剂中曝光，烘烤和显影曝光的膜以选择性地溶解抗蚀剂膜的未曝光区域，形成负图案。
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公开(公告)号：US07537880B2
公开(公告)日：2009-05-26
申请号：US11905763
申请日：2007-10-03
申请人： Yuji Harada , Jun Hatakeyama , Takao Yoshihara , Wataru Kusaki , Tomohiro Kobayashi , Koji Hasegawa
发明人： Yuji Harada , Jun Hatakeyama , Takao Yoshihara , Wataru Kusaki , Tomohiro Kobayashi , Koji Hasegawa
CPC分类号： G03F7/0397 , C08F24/00 , C08F220/32 , G03F7/0046 , G03F7/11 , G03F7/2041 , Y10S430/106 , Y10S430/108 , Y10S430/111
摘要： To a resist composition, an alkali-soluble polymer having fluorinated ester-containing lactone units incorporated therein is included as an additive. The resist composition forms a resist film having a reduced contact angle after development. The resist film prevents water penetration during immersion lithography.
摘要翻译： 作为添加剂，作为抗蚀剂组合物，含有含有含氟酯的内酯单元的碱溶性聚合物。 抗蚀剂组合物形成显影后具有降低的接触角的抗蚀剂膜。 抗蚀剂膜防止浸渍光刻时的水渗透。
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