公开(公告)号：US6158141A

公开(公告)日：2000-12-12

申请号：US304039

申请日：1999-05-04

申请人： Kazumi Asada ,  Hayato Iwamoto ,  Teruomi Minami

发明人： Kazumi Asada ,  Hayato Iwamoto ,  Teruomi Minami

IPC分类号： H01L21/00 ,  F26B21/00

CPC分类号： H01L21/67034 ,  Y10S134/902

摘要： An apparatus and method for drying semiconductor substrates to dry about 50 semiconductor wafers by evaporating an organic solvent and blowing the evaporated organic solvent onto these semiconductor wafers through a nozzle, comprises the evaporate organic solvent being blown onto the semiconductor wafers from a direction aslant by an angle from 20.degree. to 50.degree. from a vertical direction toward the semiconductor wafers. At this time, the initial spray amount of the evaporated organic solvent is not less than 0.8 cc/second and not more than 1.5 cc/second, additionally, the amount of the organic solvent used for drying is not less than 70 cc/batch and not more than 200 cc/batch.

摘要翻译： 一种干燥半导体衬底以通过蒸发有机溶剂并通过喷嘴将蒸发的有机溶剂吹送到这些半导体晶片上的半导体衬底来干燥半导体衬底的装置和方法，包括将蒸发的有机溶剂从倾斜的方向吹到半导体晶片上 从垂直方向向半导体晶片的角度为20°至50°。 此时，蒸发的有机溶剂的初始喷雾量不小于0.8cc /秒且不超过1.5cc /秒，另外用于干燥的有机溶剂的量不小于70cc /批， 不超过200cc /批。

公开(公告)号：US08545640B2

公开(公告)日：2013-10-01

申请号：US13161721

申请日：2011-06-16

申请人： Teruomi Minami ,  Naoyuki Okamura ,  Yosuke Kawabuchi

发明人： Teruomi Minami ,  Naoyuki Okamura ,  Yosuke Kawabuchi

IPC分类号： B08B3/02

CPC分类号： H01L21/67028 ,  H01L21/67051

摘要： In a substrate processing method according to the present invention, a cleaning liquid nozzle supplies a rinsing liquid to a central portion of a substrate and thereafter moves from a position corresponding to the central portion of the substrate to a position corresponding to a peripheral, edge portion thereof while supplying the rinsing liquid before stopping at the position corresponding to the peripheral edge portion. Next, a drying liquid nozzle moves from the position corresponding to the peripheral edge portion to the position corresponding to the central portion while supplying a drying liquid. Then, the drying liquid nozzle is kept stationary at the position corresponding to the central portion for a predetermined period of time while supplying the drying liquid. Thereafter, a gas nozzle moves from the position corresponding to the central portion to the position corresponding to the peripheral edge portion while supplying an inert gas.

摘要翻译： 在根据本发明的基板处理方法中，清洗液喷嘴将冲洗液体提供到基板的中心部分，然后从与基板的中心部分相对应的位置移动到对应于周边边缘部分的位置 同时在与周缘部对应的位置停止前供给冲洗液。 接着，在供给干燥液的同时，将干燥液喷嘴从对应于周缘部的位置移动到与中央部对应的位置。 然后，在供给干燥液体的同时，将干燥液喷嘴保持静止在与中央部分对应的位置一段预定的时间。 此后，在供给惰性气体的同时，气体喷嘴从对应于中心部分的位置移动到对应于周边边缘部分的位置。

公开(公告)号：US20120164840A1

公开(公告)日：2012-06-28

申请号：US13332652

申请日：2011-12-21

申请人： Satoru Tanaka ,  Takehiko Orii ,  Hirotaka Maruyama ,  Teruomi Minami ,  Mitsunori Nakamori

发明人： Satoru Tanaka ,  Takehiko Orii ,  Hirotaka Maruyama ,  Teruomi Minami ,  Mitsunori Nakamori

IPC分类号： H01L21/306 ,  B08B3/00 ,  B08B7/04

CPC分类号： H01L21/67028 ,  H01L21/67051

摘要： A substrate processing method includes a liquid processing process that supplies a processing liquid onto a substrate to process the substrate; a heating process that heats the substrate on which a liquid film of the processing liquid is formed; a supplying process that supplies a volatile processing liquid to the substrate on which the liquid film of the processing liquid is formed; a stopping process that stops the supply of the volatile processing liquid to the substrate; and a drying process that dries the substrate by removing the volatile processing liquid, in which the heating process starts before the supplying process that supplies the volatile processing liquid and the substrate is heated so that the surface temperature of the substrate is higher than a dew point before the surface of the substrate is exposed from the volatile processing liquid.

摘要翻译： 基板处理方法包括将处理液供给到基板上以处理基板的液体处理工序; 对形成有处理液的液膜的基板进行加热的加热工序; 向形成处理液的液膜的基板供给挥发性处理液的供给工序; 停止向基板供应挥发性处理液的停止处理; 以及通过除去挥发性处理液体而干燥基板的干燥工序，其中加热过程在供应挥发性处理液和基板的供应过程开始之前开始，使得基板的表面温度高于露点 在基板的表面从挥发性处理液体露出之前。

公开(公告)号：US08906165B2

公开(公告)日：2014-12-09

申请号：US13161714

申请日：2011-06-16

申请人： Teruomi Minami ,  Naoyuki Okamura ,  Hirotaka Maruyama ,  Yosuke Kawabuchi

发明人： Teruomi Minami ,  Naoyuki Okamura ,  Hirotaka Maruyama ,  Yosuke Kawabuchi

IPC分类号： B08B7/04 ,  H01L21/02 ,  H01L21/67

CPC分类号： H01L21/67028 ,  H01L21/02052 ,  H01L21/67051

摘要： In a substrate processing method according to the present invention, a substrate is first processed using a chemical liquid. Next, the substrate is rinsed by supplying a rinsing liquid thereto while the substrate is being rotated. Thereafter, the substrate is dried while the substrate is being rotated. The drying of the substrate includes reducing a rotating speed of the substrate to a first rotating speed lower than that of the substrate during the rinsing of the substrate, while supplying the rinsing liquid to a central portion of the substrate; moving, from the central portion of the substrate toward a peripheral edge portion thereof, a rinsing liquid supply position to which the rinsing liquid is supplied, after the rotating speed of the substrate has been reduced to the first rotating speed; and supplying a drying liquid to the substrate, after the rinsing liquid supply position has been moved.

摘要翻译： 在本发明的基板处理方法中，首先使用化学液处理基板。 接下来，在旋转基板的同时通过供给冲洗液来冲洗基板。 此后，在旋转基板的同时干燥基板。 基板的干燥包括在冲洗衬底期间将衬底的旋转速度降低到低于衬底的旋转速度，同时将冲洗液体供应到衬底的中心部分; 在基板的旋转速度降低到第一旋转速度之后，从基板的中心部朝向其周边部分移动供给冲洗液体的冲洗液体供给位置; 并且在冲洗液体供应位置已经移动之后将干燥液体供应到基底。

公开(公告)号：US08303723B2

公开(公告)日：2012-11-06

申请号：US12634942

申请日：2009-12-10

申请人： Teruomi Minami ,  Fumihiro Kamimura ,  Kazuki Kosai ,  Takashi Yabuta ,  Kenji Yokomizo ,  Shogo Mizota

发明人： Teruomi Minami ,  Fumihiro Kamimura ,  Kazuki Kosai ,  Takashi Yabuta ,  Kenji Yokomizo ,  Shogo Mizota

IPC分类号： B08B3/04

CPC分类号： H01L21/67051 ,  H01L21/6708

摘要： In a liquid processing apparatus configured to remove, from a substrate including a first film and a second film formed above the first film, the first film and the second film, a first chemical-liquid supply part supplies, to a substrate W, a first liquid for dissolving the first film, a second chemical-liquid supply part supplies a second chemical liquid for weakening the second film, and a fluid supply part serving also as an impact giving part gives a physical impact to the second film so as to break the second film and supplies a fluid for washing away debris of the broken second film. A control device controls the respective parts such that, after the second liquid has been supplied and then the fluid has been supplied from the fluid supply part, the first chemical liquid is supplied.

摘要翻译： 在一种液体处理装置中，配置为从包括第一膜的第一膜和在第一膜上形成的第二膜的基板上除去第一膜和第二膜，第一药液供给部向基板W供给第一膜 用于溶解第一膜的液体，第二药液供给部供给用于削弱第二膜的第二药液，还用作冲击赋予部的流体供给部对第二膜产生物理冲击，从而破坏第二膜 并且提供用于洗涤破碎的第二膜的碎屑的流体。 控制装置控制各部分，使得在第二液体被供应之后，然后从流体供应部分供应流体，供应第一化学液体。

公开(公告)号：US20090056764A1

公开(公告)日：2009-03-05

申请号：US12222871

申请日：2008-08-18

申请人： Teruomi Minami ,  Norihiro Ito ,  Yuji Kamikawa

发明人： Teruomi Minami ,  Norihiro Ito ,  Yuji Kamikawa

IPC分类号： B08B3/08 ,  B08B3/02

CPC分类号： H01L21/67051 ,  H01L21/67028 ,  H01L21/67034

摘要： A liquid processing apparatus 1 comprises a casing 5, a substrate holding mechanism 20 that holds a wafer (substrate to be processed) W, a process-liquid supplying mechanism 30 that supplies a process liquid, a draining cup 12 that receives a process liquid, and a draining pipe 13 that discharges a process liquid outside. The process-liquid supplying mechanism 30 includes a first chemical-liquid supply mechanism that supplies a hydrofluoric process liquid, and a drying-liquid supplying mechanism that supplies an organic solvent for drying a wafer W. A control part 50 causes the first chemical-liquid supplying mechanism to supply a hydrofluoric process liquid, and then causes the drying-liquid supplying mechanism to supply an organic solvent. In addition, before the control part 50 causes the drying-liquid supplying mechanism to supply an organic solvent, the control part causes a cleaning mechanism 10 to remove an alkaline component in a casing 5.

摘要翻译： 液体处理装置1包括壳体5，保持晶片（待处理基板）W的基板保持机构20，供给处理液的处理液供给机构30，接收处理液的排出杯12， 以及将处理液体排出到外部的排水管13。 处理液供给机构30包括供给氢氟化处理液的第一药液供给机构和供给干燥晶片W的有机溶剂的干燥液供给机构。控制部50使第一药液 供给机构供给氢氟化处理液，然后使干燥液供给机构供给有机溶剂。 此外，在控制部50使干燥液供给机构供给有机溶剂之前，控制部使清洁机构10除去壳体5内的碱性成分。

公开(公告)号：US08475668B2

公开(公告)日：2013-07-02

申请号：US12902721

申请日：2010-10-12

申请人： Hiroshi Tanaka ,  Teruomi Minami ,  Yosuke Kawabuchi ,  Norihiro Ito ,  Fumihiro Kamimura ,  Takashi Yabuta ,  Kazuki Kosai ,  Takeshi Uno ,  Kenji Sekiguchi ,  Yasushi Fujii

发明人： Hiroshi Tanaka ,  Teruomi Minami ,  Yosuke Kawabuchi ,  Norihiro Ito ,  Fumihiro Kamimura ,  Takashi Yabuta ,  Kazuki Kosai ,  Takeshi Uno ,  Kenji Sekiguchi ,  Yasushi Fujii

IPC分类号： H01B13/00

CPC分类号： H01L21/02057 ,  H01L21/67051

摘要： Provided are a substrate liquid processing apparatus, a substrate liquid processing method, and a computer readable storage medium having a substrate liquid processing program stored therein that can prevent the occurrence of the electrostatic breakdown caused by the discharge of electric charges in a substrate. The substrate liquid processing apparatus processes a circuit-forming surface of the substrate with a chemical liquid. Furthermore, prior to processing the substrate with the chemical liquid, the substrate liquid processing apparatus performs an anti-static process for an surface opposite to the circuit-forming surface of the substrate by an anti-static liquid, thereby emitting the electric charges on the substrate.

摘要翻译： 提供一种基板液体处理装置，基板液体处理方法以及其中存储有基板液体处理程序的计算机可读存储介质，其可以防止由基板中的电荷放电引起的静电破坏的发生。 基板液体处理装置用化学液体处理基板的电路形成表面。 此外，在用化学液体处理基板之前，基板液体处理装置通过防静电液体对与基板的电路形成面相反的表面进行防静电处理，从而将电荷 基质。

公开(公告)号：US08371318B2

公开(公告)日：2013-02-12

申请号：US13591877

申请日：2012-08-22

申请人： Teruomi Minami ,  Norihiro Ito ,  Yuji Kamikawa

发明人： Teruomi Minami ,  Norihiro Ito ,  Yuji Kamikawa

IPC分类号： B08B3/00

CPC分类号： H01L21/67051 ,  H01L21/67028 ,  H01L21/67034

摘要： A liquid processing apparatus 1 comprises a casing 5, a substrate holding mechanism 20 that holds a wafer (substrate to be processed) W, a process-liquid supplying mechanism 30 that supplies a process liquid, a draining cup 12 that receives a process liquid, and a draining pipe 13 that discharges a process liquid outside. The process-liquid supplying mechanism 30 includes a first chemical-liquid supply mechanism that supplies a hydrofluoric process liquid, and a drying-liquid supplying mechanism that supplies an organic solvent for drying a wafer W. A control part 50 causes the first chemical-liquid supplying mechanism to supply a hydrofluoric process liquid, and then causes the drying-liquid supplying mechanism to supply an organic solvent. In addition, before the control part 50 causes the drying-liquid supplying mechanism to supply an organic solvent, the control part causes a cleaning mechanism 10 to remove an alkaline component in a casing 5.

公开(公告)号：US07669472B2

公开(公告)日：2010-03-02

申请号：US11604890

申请日：2006-11-28

申请人： Koji Tanaka ,  Teruomi Minami

发明人： Koji Tanaka ,  Teruomi Minami

IPC分类号： G01F23/00

CPC分类号： G01F23/02 ,  G01F23/2927

摘要： A liquid level detector 10 includes a liquid guiding pipe 14 that guides a liquid in a tank to an inside thereof in such a manner that a liquid level of the guided liquid conforms to a liquid level of the liquid in the tank, and a branching liquid guiding pipe 15 for detecting a liquid level, which branches off from the liquid guiding pipe to guide the liquid into an inside thereof in such a manner that a liquid level of the guided liquid conforms to a liquid level of the liquid in the tank. The branching liquid guiding pipe 15 is provided with position sensors 16 (16a, 16b, 16c, 16d) for detecting the liquid level of the liquid in the branching liquid guiding pipe 15. On a part where the liquid guiding pipe 14 and the branching liquid guiding pipe 15 are connected to each other, there is disposed a bubble passage prevention member 17 of a porous plate shape, which prevents bubble generated in the liquid from entering the branching liquid guiding pipe 15.

摘要翻译： 液面检测器10包括：液体引导管14，其将罐中的液体引导到其内部，使得被引导液体的液面与罐中液体的液面一致;以及分支液体 引导管15，用于检测从液体引导管分支的液面，以将液体引导到其内部，使得被引导液体的液面与罐中液体的液面一致。 分支液引导管15设置有用于检测分支液引导管15中的液体液位的位置传感器16（16a，16b，16c，16d）。在液体引导管14和分支液体 引导管15彼此连接，设置有防止液体中产生的气泡进入分支液引导管15的多孔板形状的气泡通道防止部件17。

公开(公告)号：US08978671B2

公开(公告)日：2015-03-17

申请号：US13332652

申请日：2011-12-21

申请人： Satoru Tanaka ,  Takehiko Orii ,  Hirotaka Maruyama ,  Teruomi Minami ,  Mitsunori Nakamori

发明人： Satoru Tanaka ,  Takehiko Orii ,  Hirotaka Maruyama ,  Teruomi Minami ,  Mitsunori Nakamori

IPC分类号： B08B3/00 ,  H01L21/67

CPC分类号： H01L21/67028 ,  H01L21/67051

摘要： An apparatus comprising: a processing liquid supply unit; a volatile processing liquid supply unit; a substrate heating unit; and a controller to control the volatile processing liquid supply unit and the substrate heating unit, wherein the controller executes a process of supplying the processing liquid to the substrate, a process of heating the substrate on which a liquid film of the processing liquid is formed, a process of supplying a volatile processing liquid, a process of stopping the supply of the volatile processing liquid, and a process of drying the substrate by removing the volatile processing liquid, and wherein the process of heating the substrate starts before the process of supplying the volatile processing liquid, and the substrate heating unit heats the substrate so that the surface temperature of the substrate is higher than a dew point before the surface of the substrate is exposed from the volatile processing liquid.

摘要翻译： 一种设备，包括：处理液供应单元; 挥发性处理液体供应单元; 基板加热单元; 以及控制器，用于控制所述挥发性处理液体供应单元和所述基板加热单元，其中所述控制器执行将处理液体供应到所述基板的处理，对其上形成有所述处理液体的液体膜的基板进行加热的处理， 提供挥发性处理液的处理，停止供给挥发性处理液的处理，以及通过除去挥发性处理液来干燥基板的工序，并且，在供给工序之前开始加热基板 并且所述基板加热单元加热所述基板，使得所述基板的表面温度高于在所述基板的表面从所述挥发性处理液体露出之前的露点。