公开(公告)号：US20080012016A1

公开(公告)日：2008-01-17

申请号：US11767217

申请日：2007-06-22

申请人： Kazunori INOUE ,  Nobuaki Ishiga ,  Kensuke Nagayama ,  Toru Takeguchi ,  Kazumasa Kawase

发明人： Kazunori INOUE ,  Nobuaki Ishiga ,  Kensuke Nagayama ,  Toru Takeguchi ,  Kazumasa Kawase

IPC分类号： H01L33/00 ,  H01B1/02

CPC分类号： H01J29/28 ,  G02F1/13439 ,  G02F1/13458 ,  H01L27/3244 ,  H01L51/5206 ,  H01L51/5218 ,  H01L51/5234 ,  H01L2227/323

摘要： A transparent conductive film substantially made from In2O3, SnO2 and ZnO, having a molar ratio In/(In+Sn+Zn) of 0.65 to 0.8 and also a molar ratio Sn/Zn of 1 or less: The transparent conductive film has a favorable electric contact property with an electrode or line made from Al or Al alloy film. Further, a semiconductor device having an electrode or line made from the transparent conductive film has high reliability and productivity.

摘要翻译： 基本上由In 2 N 3 O 3，SnO 2和ZnO组成的透明导电膜，其具有In /（In + Sn + Zn ）为0.65〜0.8，Sn / Zn的摩尔比为1以下：透明导电膜与由Al或Al合金膜形成的电极或线具有良好的电接触性。 此外，具有由透明导电膜制成的电极或线的半导体器件具有高的可靠性和生产率。

公开(公告)号：US07420215B2

公开(公告)日：2008-09-02

申请号：US11767217

申请日：2007-06-22

申请人： Kazunori Inoue ,  Nobuaki Ishiga ,  Kensuke Nagayama ,  Toru Takeguchi ,  Kazumasa Kawase

发明人： Kazunori Inoue ,  Nobuaki Ishiga ,  Kensuke Nagayama ,  Toru Takeguchi ,  Kazumasa Kawase

IPC分类号： H01L29/04 ,  H01L29/15 ,  H01L31/036 ,  H01L29/10 ,  H01L31/0376 ,  H01L31/20 ,  H01L31/00 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01J29/28 ,  G02F1/13439 ,  G02F1/13458 ,  H01L27/3244 ,  H01L51/5206 ,  H01L51/5218 ,  H01L51/5234 ,  H01L2227/323

摘要： A transparent conductive film substantially made from In2O3, SnO2 and ZnO, having a molar ratio In/(In+Sn+Zn) of 0.65 to 0.8 and also a molar ratio Sn/Zn of 1 or less: The transparent conductive film has a favorable electric contact property with an electrode or line made from Al or Al alloy film. Further, a semiconductor device having an electrode or line made from the transparent conductive film has high reliability and productivity.

摘要翻译： 基本上由In 2 N 3 O 3，SnO 2和ZnO组成的透明导电膜，其具有In /（In + Sn + Zn ）为0.65〜0.8，Sn / Zn的摩尔比为1以下：透明导电膜与由Al或Al合金膜形成的电极或线具有良好的电接触性。 此外，具有由透明导电膜制成的电极或线的半导体器件具有高的可靠性和生产率。

公开(公告)号：US20070284742A1

公开(公告)日：2007-12-13

申请号：US11741193

申请日：2007-04-27

申请人： Kazunori Inoue ,  Nobuaki Ishiga ,  Kensuke Nagayama ,  Kazumasa Kawase

发明人： Kazunori Inoue ,  Nobuaki Ishiga ,  Kensuke Nagayama ,  Kazumasa Kawase

IPC分类号： H01L23/48

CPC分类号： H01L29/4908 ,  G02F2001/136295 ,  H01L27/124 ,  H01L29/458

摘要： A semiconductor device includes a semiconductor layer, an Al alloy film electrically connected to the semiconductor layer, and a transparent electrode layer directly contacting with the Al alloy film at least over an insulating substrate. The Al alloy film includes one or more kinds of elements selected from Fe, Co and Ni in total of 0.5 to 10 mol %, and a remaining substantially comprises Al.

摘要翻译： 半导体器件包括半导体层，与半导体层电连接的Al合金膜，以及至少在绝缘基板上与Al合金膜直接接触的透明电极层。 Al合金膜包括选自Fe，Co和Ni中的一种或多种元素，总计为0.5至10mol％，其余基本上包含Al。

公开(公告)号：US08546804B2

公开(公告)日：2013-10-01

申请号：US13232251

申请日：2011-09-14

申请人： Takeshi Ono ,  Naoki Nakagawa ,  Yusuke Yamagata ,  Kazunori Inoue ,  Nobuaki Ishiga ,  Kensuke Nagayama ,  Naoki Tsumura ,  Toru Takeguchi

发明人： Takeshi Ono ,  Naoki Nakagawa ,  Yusuke Yamagata ,  Kazunori Inoue ,  Nobuaki Ishiga ,  Kensuke Nagayama ,  Naoki Tsumura ,  Toru Takeguchi

IPC分类号： H01L29/04 ,  H01L29/10 ,  H01L31/00 ,  G02F1/136

CPC分类号： H01L29/458 ,  H01L29/42384 ,  H01L29/66765

摘要： It is an object to provide a technique to improve electric characteristics after a high-temperature treatment even when a high melting point metal barrier layer is not formed. A semiconductor device includes a gate electrode formed on a transparent insulation substrate, a semiconductor layer having a Si semiconductor active film and an ohmic low resistance Si film having an n-type conductivity, being formed in this order on the gate electrode with a gate insulation film interposed between the gate electrode and the semiconductor layer, and the source and drain electrodes directly connected to the semiconductor layer and containing at least aluminum (Al). At least nitrogen (N) is contained in a first region that is in the vicinity of an interface between a side surface of the SI semiconductor active film and the source and drain electrodes.

摘要翻译： 本发明的目的是提供一种即使在没有形成高熔点金属阻挡层的情况下也可以改善高温处理后的电特性的技术。 半导体器件包括形成在透明绝缘基板上的栅极电极，具有Si半导体活性膜的半导体层和具有n型导电性的欧姆低电阻Si膜依次形成在具有栅绝缘层的栅电极上 插入在栅电极和半导体层之间的膜，以及直接连接到半导体层并且至少包含铝（Al）的源极和漏极。 在SI半导体活性膜的侧面与源电极和漏极之间的界面附近的第一区域中至少含有氮（N）。

公开(公告)号：US20090065942A1

公开(公告)日：2009-03-12

申请号：US12206187

申请日：2008-09-08

申请人： Kazunori INOUE ,  Nobuaki Ishiga ,  Kensuke Nagayama ,  Naoki Tsumura ,  Takumi Nakahata ,  Kazumasa Kawase

发明人： Kazunori INOUE ,  Nobuaki Ishiga ,  Kensuke Nagayama ,  Naoki Tsumura ,  Takumi Nakahata ,  Kazumasa Kawase

IPC分类号： H01L23/52 ,  H01L21/44

CPC分类号： H01L21/2855 ,  H01L23/53223 ,  H01L27/124 ,  H01L29/458 ,  H01L29/4908 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device includes a film containing silicon as the main ingredient, and an aluminum alloy film, such as a source electrode and a drain electrode, that is directly connected to the film containing silicon as the main ingredient, such as an ohmic low-resistance Si film, and contains at least Al, Ni, and N in the vicinity of the bonding interface. The Aluminum alloy film has a good contact characteristic when directly connected to the film containing silicon as the main ingredient without having a barrier layer formed of high melting point metal.

摘要翻译： 半导体器件包括以硅为主要成分的膜，以及与以硅为主要成分的膜直接连接的诸如源电极和漏电极的铝合金膜，例如欧姆低电阻 Si膜，并且在接合界面附近至少含有Al，Ni和N。 当直接连接到含硅作为主要成分的膜而不具有由高熔点金属形成的阻挡层时，铝合金膜具有良好的接触特性。

公开(公告)号：US20120112194A1

公开(公告)日：2012-05-10

申请号：US13232251

申请日：2011-09-14

申请人： Takeshi Ono ,  Naoki Nakagawa ,  Yusuke Yamagata ,  Kazunori Inoue ,  Nobuaki Ishiga ,  Kensuke Nagayama ,  Naoki Tsumura ,  Toru Takeguchi

发明人： Takeshi Ono ,  Naoki Nakagawa ,  Yusuke Yamagata ,  Kazunori Inoue ,  Nobuaki Ishiga ,  Kensuke Nagayama ,  Naoki Tsumura ,  Toru Takeguchi

IPC分类号： H01L33/08

CPC分类号： H01L29/458 ,  H01L29/42384 ,  H01L29/66765

摘要： It is an object to provide a technique to improve electric characteristics after a high-temperature treatment even when a high melting point metal barrier layer is not formed. A semiconductor device includes a gate electrode formed on a transparent insulation substrate, a semiconductor layer having a Si semiconductor active film and an ohmic low resistance Si film having an n-type conductivity, being formed in this order on the gate electrode with a gate insulation film interposed between the gate electrode and the semiconductor layer, and the source and drain electrodes directly connected to the semiconductor layer and containing at least aluminum (Al). At least nitrogen (N) is contained in a first region that is in the vicinity of an interface between a side surface of the SI semiconductor active film and the source and drain electrodes.

摘要翻译： 本发明的目的是提供一种即使在没有形成高熔点金属阻挡层的情况下也可以改善高温处理后的电特性的技术。 半导体器件包括形成在透明绝缘基板上的栅极电极，具有Si半导体活性膜的半导体层和具有n型导电性的欧姆低电阻Si膜依次形成在具有栅绝缘层的栅电极上 插入在栅电极和半导体层之间的膜，以及直接连接到半导体层并且至少包含铝（Al）的源极和漏极。 在SI半导体活性膜的侧面与源电极和漏极之间的界面附近的第一区域中至少含有氮（N）。

公开(公告)号：US20060192481A1

公开(公告)日：2006-08-31

申请号：US11299906

申请日：2005-12-13

申请人： Kensuke Nagayama ,  Nobuaki Ishiga ,  Kazunori Inoue ,  Toru Takeguchi ,  Hiroyuki Fuchigami

发明人： Kensuke Nagayama ,  Nobuaki Ishiga ,  Kazunori Inoue ,  Toru Takeguchi ,  Hiroyuki Fuchigami

IPC分类号： H05B33/26 ,  H01L51/50

CPC分类号： H01L51/5218 ,  H01L27/3244 ,  H01L51/5271 ,  H01L2251/5315

摘要： An organic electroluminescence type display apparatus of top emission type, in which a thin film transistor (TFT), a flattening film made of organic resin and an organic EL element, in which at least an anode, an electroluminescence layer and a cathode are laminated on the flattening film in this order, are formed in each picture element in a display region on a substrate. The anode is composed of at least two layer film including an aluminum (Al) alloy film containing as a impurity at least one of transition metals of the eighth group of 3d into Al and including a light transmitting conductive oxide film laminated on the Al alloy film.

摘要翻译： 一种顶发光型有机电致发光型显示装置，其中薄膜晶体管（TFT），由有机树脂制成的平坦化膜和有机EL元件，其中至少阳极，电致发光层和阴极层压在 平坦化膜依次形成在基板上的显示区域中的每个像素中。 阳极由至少两层膜组成，该层包括铝（Al）合金膜，其含有第八组3d的过渡金属作为杂质作为杂质，并且包含层叠在Al合金膜上的透光性导电氧化膜 。

公开(公告)号：US07825515B2

公开(公告)日：2010-11-02

申请号：US12206187

申请日：2008-09-08

申请人： Kazunori Inoue ,  Nobuaki Ishiga ,  Kensuke Nagayama ,  Naoki Tsumura ,  Takumi Nakahata ,  Kazumasa Kawase

发明人： Kazunori Inoue ,  Nobuaki Ishiga ,  Kensuke Nagayama ,  Naoki Tsumura ,  Takumi Nakahata ,  Kazumasa Kawase

IPC分类号： H01L23/48

CPC分类号： H01L21/2855 ,  H01L23/53223 ,  H01L27/124 ,  H01L29/458 ,  H01L29/4908 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device includes a film containing silicon as the main ingredient, and an aluminum alloy film, such as a source electrode and a drain electrode, that is directly connected to the film containing silicon as the main ingredient, such as an ohmic low-resistance Si film, and contains at least Al, Ni, and N in the vicinity of the bonding interface. The Aluminum alloy film has a good contact characteristic when directly connected to the film containing silicon as the main ingredient without having a barrier layer formed of high melting point metal.

摘要翻译： 半导体器件包括以硅为主要成分的膜，以及与以硅为主要成分的膜直接连接的源极，漏电极等铝合金膜，例如欧姆低电阻 Si膜，并且在接合界面附近至少含有Al，Ni和N。 当直接连接到含硅作为主要成分的膜而不具有由高熔点金属形成的阻挡层时，铝合金膜具有良好的接触特性。

公开(公告)号：US07910053B2

公开(公告)日：2011-03-22

申请号：US11741193

申请日：2007-04-27

申请人： Kazunori Inoue ,  Nobuaki Ishiga ,  Kensuke Nagayama ,  Kazumasa Kawase

发明人： Kazunori Inoue ,  Nobuaki Ishiga ,  Kensuke Nagayama ,  Kazumasa Kawase

IPC分类号： H01L23/48

CPC分类号： H01L29/4908 ,  G02F2001/136295 ,  H01L27/124 ,  H01L29/458

摘要： A semiconductor device includes a semiconductor layer, an Al alloy film electrically connected to the semiconductor layer, and a transparent electrode layer directly contacting with the Al alloy film at least over an insulating substrate. The Al alloy film includes one or more kinds of elements selected from Fe, Co and Ni in total of 0.5 to 10 mol %, and a remaining substantially comprises Al.

摘要翻译： 半导体器件包括半导体层，与半导体层电连接的Al合金膜，以及至少在绝缘基板上与Al合金膜直接接触的透明电极层。 Al合金膜包括选自Fe，Co和Ni中的一种或多种元素，总计为0.5至10mol％，其余基本上包含Al。

公开(公告)号：US08159749B2

公开(公告)日：2012-04-17

申请号：US12545217

申请日：2009-08-21

申请人： Kazunori Inoue ,  Naoki Tsumura ,  Nobuaki Ishiga ,  Takeshi Ono ,  Naoki Nakagawa ,  Masafumi Agari ,  Yusuke Yamagata ,  Kensuke Nagayama

发明人： Kazunori Inoue ,  Naoki Tsumura ,  Nobuaki Ishiga ,  Takeshi Ono ,  Naoki Nakagawa ,  Masafumi Agari ,  Yusuke Yamagata ,  Kensuke Nagayama

IPC分类号： G02B5/28 ,  G02F1/1335

CPC分类号： G02B1/116 ,  C08K3/08 ,  C09D1/00 ,  C09D7/61 ,  C23C14/0036 ,  C23C14/0641 ,  C23C14/18 ,  G02F1/133502 ,  Y10T428/265

摘要： An antireflection coating is formed on a transparent substrate and includes an Al film having a transmittance of lower than 10% at a wavelength of 550 nm with a thickness of 25 nm and predominantly composed of aluminum (Al), and an Al—N film formed in at least one of an upper layer and a lower layer of the Al film, having a transmittance of equal to or higher than 10% at a wavelength of 550 nm with a thickness of 25 nm, predominantly composed of Al and at least containing a nitrogen (N) element as an additive. A specific resistance of the antireflection coating is equal to or lower than 1.0×10−2 O·cm, and a reflectance of a surface of the Al—N film is equal to or lower than 50% in a visible light region.

摘要翻译： 在透明基板上形成防反射膜，在550nm波长下透射率低于10％的Al膜，厚度为25nm，主要由铝（Al）构成，形成Al-N膜 在Al膜的上层和下层中的至少一层中，在550nm的波长下具有等于或高于10％的透射率，厚度为25nm，主要由Al组成并且至少含有 氮（N）元素作为添加剂。 抗反射涂层的电阻率为1.0×10 -2 O·cm以下，Al-N膜的表面的可反射率在可见光区域为50％以下。