公开(公告)号：US4907114A

公开(公告)日：1990-03-06

申请号：US201739

申请日：1988-06-03

申请人： Kazuo Shiiki ,  Masahiro Kitada ,  Hideo Tanabe ,  Hitoshi Nakamura ,  Isamu Yuito ,  Hisashi Takano

发明人： Kazuo Shiiki ,  Masahiro Kitada ,  Hideo Tanabe ,  Hitoshi Nakamura ,  Isamu Yuito ,  Hisashi Takano

IPC分类号： G11B5/39

CPC分类号： G11B5/3932 ,  G11B5/3987

摘要： A magneto-resistive type read head has a substrate, a magnetic film exhibiting a magneto-resistive effect arranged in the widthwise direction of the track of a magnetic writing disk, and lead electrodes for feeding an electric current to the track width portion of the magnetic film for reading the signals written in the magnetic writing disk. The magneto-resistive film extends over a width wider than the track width portion and a soft magnetic thin film is formed over the magneto-resistive film on either side of the track width portion to absorb the domain wall so that the magneto-resistive film takes the single domain structure.

摘要翻译： 磁阻型读取头具有衬底，在磁性写盘的轨道的宽度方向上布置的磁阻效应的磁性膜和用于将电流馈送到磁性磁道的磁道宽度部分的引线电极 用于读取写入磁性写入盘的信号的胶片。 磁阻薄膜的宽度大于轨道宽度部分的宽度，并且在磁道宽度部分两侧的磁阻膜上方形成软磁性薄膜，以吸收畴壁，使得磁阻薄膜 单域结构。

公开(公告)号：US20060152862A1

公开(公告)日：2006-07-13

申请号：US11371244

申请日：2006-03-09

申请人： Ryoichi Nakatani ,  Masahiro Kitada ,  Naoki Koyama ,  Isamu Yuito ,  Hisashi Takano ,  Eijin Moriwaki ,  Mikio Suzuki ,  Masaaki Futamoto ,  Fumio Kugiya ,  Yoshibumi Matsuda ,  Kazuo Shiiki ,  Yoshinori Miyamura ,  Kyo Akagi ,  Takeshi Nakao ,  Hirotsugu Fukuoka ,  Takayuki Munemoto ,  Tokuho Takagaki ,  Toshio Kobayashi ,  Hideo Tanabe ,  Noboru Shimizu

发明人： Ryoichi Nakatani ,  Masahiro Kitada ,  Naoki Koyama ,  Isamu Yuito ,  Hisashi Takano ,  Eijin Moriwaki ,  Mikio Suzuki ,  Masaaki Futamoto ,  Fumio Kugiya ,  Yoshibumi Matsuda ,  Kazuo Shiiki ,  Yoshinori Miyamura ,  Kyo Akagi ,  Takeshi Nakao ,  Hirotsugu Fukuoka ,  Takayuki Munemoto ,  Tokuho Takagaki ,  Toshio Kobayashi ,  Hideo Tanabe ,  Noboru Shimizu

IPC分类号： G11B5/33

CPC分类号： G11B5/398 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3929 ,  G11B5/3967 ,  G11B2005/0002 ,  G11B2005/0016 ,  G11B2005/3996 ,  H01F10/324 ,  H01F10/3254 ,  H01F10/3268 ,  H01L43/08 ,  Y10T29/49032 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49155

摘要： The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magnetoresistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a current flows in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.

摘要翻译： 磁阻效应元件是至少具有磁性层和抵抗磁性层的绝缘材料，半导体或反铁磁材料的中间层的多层结构，并且磁阻效应元件至少在相对的磁性层上形成端子， 从而电流在中间层中流动。 构成磁阻效应元件的所有磁性层的膜表面基本上与磁记录介质的记录表面成直角相对。 因此，能够极大地降低与磁记录介质的记录面对置的磁性层的面积，因此能够通过电流检测来自高密度记录磁记录介质的非常窄的区域的磁场 穿透特性，穿过中间层。

公开(公告)号：US07054120B2

公开(公告)日：2006-05-30

申请号：US10700500

申请日：2003-11-05

申请人： Ryoichi Nakatani ,  Masahiro Kitada ,  Naoki Koyama ,  Isamu Yuito ,  Hisashi Takano ,  Eijin Moriwaki ,  Mikio Suzuki ,  Masaaki Futamoto ,  Fumio Kugiya ,  Yoshibumi Matsuda ,  Kazuo Shiiki ,  Yoshinori Miyamura ,  Kyo Akagi ,  Takeshi Nakao ,  Hirotsugu Fukuoka ,  Takayuki Munemoto ,  Tokuho Takagaki ,  Toshio Kobayashi ,  Hideo Tanabe ,  Noboru Shimizu

发明人： Ryoichi Nakatani ,  Masahiro Kitada ,  Naoki Koyama ,  Isamu Yuito ,  Hisashi Takano ,  Eijin Moriwaki ,  Mikio Suzuki ,  Masaaki Futamoto ,  Fumio Kugiya ,  Yoshibumi Matsuda ,  Kazuo Shiiki ,  Yoshinori Miyamura ,  Kyo Akagi ,  Takeshi Nakao ,  Hirotsugu Fukuoka ,  Takayuki Munemoto ,  Tokuho Takagaki ,  Toshio Kobayashi ,  Hideo Tanabe ,  Noboru Shimizu

IPC分类号： G11B5/39

CPC分类号： G11B5/398 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3929 ,  G11B5/3967 ,  G11B2005/0002 ,  G11B2005/0016 ,  G11B2005/3996 ,  H01F10/324 ,  H01F10/3254 ,  H01F10/3268 ,  H01L43/08 ,  Y10T29/49032 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49155

摘要： The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magnetoresistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a current flows in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.

摘要翻译： 磁阻效应元件是至少具有磁性层和抵抗磁性层的绝缘材料，半导体或反铁磁材料的中间层的多层结构，并且磁阻效应元件至少在相对的磁性层上形成端子， 使得电流在中间层中流动。 构成磁阻效应元件的所有磁性层的膜表面基本上与磁记录介质的记录表面成直角相对。 因此，能够极大地降低与磁记录介质的记录面对置的磁性层的面积，因此能够通过电流检测来自高密度记录磁记录介质的非常窄的区域的磁场 穿透特性，穿过中间层。

公开(公告)号：US06278593B1

公开(公告)日：2001-08-21

申请号：US09468309

申请日：1999-12-21

申请人： Ryoichi Nakatani ,  Masahiro Kitada ,  Naoki Koyama ,  Isamu Yuito ,  Hisashi Takano ,  Eijin Moriwaki ,  Mikio Suzuki ,  Masaaki Futamoto ,  Fumio Kugiya ,  Yoshibumi Matsuda ,  Kazuo Shiiki ,  Yoshinori Miyamura ,  Kyo Akagi ,  Takeshi Nakao ,  Hirotsugu Fukuoka ,  Takayuki Munemoto ,  Tokuho Takagaki ,  Toshio Kobayashi ,  Hideo Tanabe ,  Noboru Shimizu

发明人： Ryoichi Nakatani ,  Masahiro Kitada ,  Naoki Koyama ,  Isamu Yuito ,  Hisashi Takano ,  Eijin Moriwaki ,  Mikio Suzuki ,  Masaaki Futamoto ,  Fumio Kugiya ,  Yoshibumi Matsuda ,  Kazuo Shiiki ,  Yoshinori Miyamura ,  Kyo Akagi ,  Takeshi Nakao ,  Hirotsugu Fukuoka ,  Takayuki Munemoto ,  Tokuho Takagaki ,  Toshio Kobayashi ,  Hideo Tanabe ,  Noboru Shimizu

IPC分类号： G11B539

CPC分类号： G11B5/398 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3929 ,  G11B5/3967 ,  G11B2005/0002 ,  G11B2005/0016 ,  G11B2005/3996 ,  H01F10/324 ,  H01F10/3254 ,  H01F10/3268 ,  H01L43/08 ,  Y10T29/49032 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49155

摘要： The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semicondutor or an antiferromagnetic material against the magnetic layers, and the magneto-resistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a current flows in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.

摘要翻译： 磁阻效应元件是至少具有磁性层和抵抗磁性层的绝缘材料，半导体或反铁磁材料的中间层的多层结构，并且磁阻效应元件具有至少形成在相对的磁体上的端子 层，使得电流在中间层中流动。 构成磁阻效应元件的所有磁性层的膜表面基本上与磁记录介质的记录表面成直角相对。 因此，能够极大地降低与磁记录介质的记录面对置的磁性层的面积，因此能够通过电流检测来自高密度记录磁记录介质的非常窄的区域的磁场 穿透特性，穿过中间层。

公开(公告)号：US07159303B2

公开(公告)日：2007-01-09

申请号：US11371244

申请日：2006-03-09

申请人： Ryoichi Nakatani ,  Masahiro Kitada ,  Naoki Koyama ,  Isamu Yuito ,  Hisashi Takano ,  Eijin Moriwaki ,  Mikio Suzuki ,  Masaaki Futamoto ,  Fumio Kugiya ,  Yoshibumi Matsuda ,  Kazuo Shiiki ,  Yoshinori Miyamura ,  Kyo Akagi ,  Takeshi Nakao ,  Hirotsugu Fukuoka ,  Takayuki Munemoto ,  Tokuho Takagaki ,  Toshio Kobayashi ,  Hideo Tanabe ,  Noboru Shimizu

发明人： Ryoichi Nakatani ,  Masahiro Kitada ,  Naoki Koyama ,  Isamu Yuito ,  Hisashi Takano ,  Eijin Moriwaki ,  Mikio Suzuki ,  Masaaki Futamoto ,  Fumio Kugiya ,  Yoshibumi Matsuda ,  Kazuo Shiiki ,  Yoshinori Miyamura ,  Kyo Akagi ,  Takeshi Nakao ,  Hirotsugu Fukuoka ,  Takayuki Munemoto ,  Tokuho Takagaki ,  Toshio Kobayashi ,  Hideo Tanabe ,  Noboru Shimizu

IPC分类号： G11B5/127

CPC分类号： G11B5/398 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3929 ,  G11B5/3967 ,  G11B2005/0002 ,  G11B2005/0016 ,  G11B2005/3996 ,  H01F10/324 ,  H01F10/3254 ,  H01F10/3268 ,  H01L43/08 ,  Y10T29/49032 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49155

摘要： The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magnetoresistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a current flows in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.

摘要翻译： 磁阻效应元件是至少具有磁性层和抵抗磁性层的绝缘材料，半导体或反铁磁材料的中间层的多层结构，并且磁阻效应元件至少在相对的磁性层上形成端子， 使得电流在中间层中流动。 构成磁阻效应元件的所有磁性层的膜表面基本上与磁记录介质的记录表面成直角相对。 因此，能够极大地降低与磁记录介质的记录面对置的磁性层的面积，因此能够通过电流检测来自高密度记录磁记录介质的非常窄的区域的磁场 穿透特性，穿过中间层。

公开(公告)号：US06687099B2

公开(公告)日：2004-02-03

申请号：US10270120

申请日：2002-10-15

申请人： Ryoichi Nakatani ,  Masahiro Kitada ,  Naoki Koyama ,  Isamu Yuito ,  Hisashi Takano ,  Eijin Moriwaki ,  Mikio Suzuki ,  Masaaki Futamoto ,  Fumio Kugiya ,  Yoshibumi Matsuda ,  Kazuo Shiiki ,  Yoshinori Miyamura ,  Kyo Akagi ,  Takeshi Nakao ,  Hirotsugu Fukuoka ,  Takayuki Munemoto ,  Tokuho Takagaki ,  Toshio Kobayashi ,  Hideo Tanabe ,  Noboru Shimizu

发明人： Ryoichi Nakatani ,  Masahiro Kitada ,  Naoki Koyama ,  Isamu Yuito ,  Hisashi Takano ,  Eijin Moriwaki ,  Mikio Suzuki ,  Masaaki Futamoto ,  Fumio Kugiya ,  Yoshibumi Matsuda ,  Kazuo Shiiki ,  Yoshinori Miyamura ,  Kyo Akagi ,  Takeshi Nakao ,  Hirotsugu Fukuoka ,  Takayuki Munemoto ,  Tokuho Takagaki ,  Toshio Kobayashi ,  Hideo Tanabe ,  Noboru Shimizu

IPC分类号： G11B539

CPC分类号： G11B5/398 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3929 ,  G11B5/3967 ,  G11B2005/0002 ,  G11B2005/0016 ,  G11B2005/3996 ,  H01F10/324 ,  H01F10/3254 ,  H01F10/3268 ,  H01L43/08 ,  Y10T29/49032 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49155

摘要： The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magnetoresistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.

摘要翻译： 磁阻效应元件是至少具有磁性层和抵抗磁性层的绝缘材料，半导体或反铁磁材料的中间层的多层结构，并且磁阻效应元件至少在相对的磁性层上形成端子， 使得构成磁阻效应元件的所有磁性层基本上与磁记录介质的记录表面成直角相对。 因此，能够极大地降低与磁记录介质的记录面对置的磁性层的面积，因此能够通过电流检测来自高密度记录磁记录介质的非常窄的区域的磁场 穿透特性，穿过中间层。

公开(公告)号：US06483677B2

公开(公告)日：2002-11-19

申请号：US09931897

申请日：2001-08-20

申请人： Ryoichi Nakatani ,  Masahiro Kitada ,  Naoki Koyama ,  Isamu Yuito ,  Hisashi Takano ,  Eijin Moriwaki ,  Mikio Suzuki ,  Masaaki Futamoto ,  Fumio Kugiya ,  Yoshibumi Matsuda ,  Kazuo Shiiki ,  Yoshinori Miyamura ,  Kyo Akagi ,  Takeshi Nakao ,  Hirotsugu Fukuoka ,  Takayuki Munemoto ,  Tokuho Takagaki ,  Toshio Kobayashi ,  Hideo Tanabe ,  Noboru Shimizu

发明人： Ryoichi Nakatani ,  Masahiro Kitada ,  Naoki Koyama ,  Isamu Yuito ,  Hisashi Takano ,  Eijin Moriwaki ,  Mikio Suzuki ,  Masaaki Futamoto ,  Fumio Kugiya ,  Yoshibumi Matsuda ,  Kazuo Shiiki ,  Yoshinori Miyamura ,  Kyo Akagi ,  Takeshi Nakao ,  Hirotsugu Fukuoka ,  Takayuki Munemoto ,  Tokuho Takagaki ,  Toshio Kobayashi ,  Hideo Tanabe ,  Noboru Shimizu

IPC分类号： G11B539

CPC分类号： G11B5/398 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3929 ,  G11B5/3967 ,  G11B2005/0002 ,  G11B2005/0016 ,  G11B2005/3996 ,  H01F10/324 ,  H01F10/3254 ,  H01F10/3268 ,  H01L43/08 ,  Y10T29/49032 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49155

摘要： The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magnetoresistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a current flows in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.

摘要翻译： 磁阻效应元件是至少具有磁性层和抵抗磁性层的绝缘材料，半导体或反铁磁材料的中间层的多层结构，并且磁阻效应元件至少在相对的磁性层上形成端子， 使得电流在中间层中流动。 构成磁阻效应元件的所有磁性层的膜表面基本上与磁记录介质的记录表面成直角相对。 因此，能够极大地降低与磁记录介质的记录面对置的磁性层的面积，因此能够通过电流检测来自高密度记录磁记录介质的非常窄的区域的磁场 穿透特性，穿过中间层。

公开(公告)号：US6011674A

公开(公告)日：2000-01-04

申请号：US626333

申请日：1996-04-02

申请人： Ryoichi Nakatani ,  Masahiro Kitada ,  Naoki Koyama ,  Isamu Yuito ,  Hisashi Takano ,  Eijin Moriwaki ,  Mikio Suzuki ,  Masaaki Futamoto ,  Fumio Kugiya ,  Yoshibumi Matsuda ,  Kazuo Shiiki ,  Yoshinori Miyamura ,  Kyo Akagi ,  Takeshi Nakao ,  Hirotsugu Fukuoka ,  Takayuki Munemoto ,  Tokuho Takagaki ,  Toshio Kobayashi ,  Hideo Tanabe ,  Noboru Shimizu

发明人： Ryoichi Nakatani ,  Masahiro Kitada ,  Naoki Koyama ,  Isamu Yuito ,  Hisashi Takano ,  Eijin Moriwaki ,  Mikio Suzuki ,  Masaaki Futamoto ,  Fumio Kugiya ,  Yoshibumi Matsuda ,  Kazuo Shiiki ,  Yoshinori Miyamura ,  Kyo Akagi ,  Takeshi Nakao ,  Hirotsugu Fukuoka ,  Takayuki Munemoto ,  Tokuho Takagaki ,  Toshio Kobayashi ,  Hideo Tanabe ,  Noboru Shimizu

IPC分类号： G01R33/09 ,  G11B5/39 ,  H01F10/32 ,  H01L43/08 ,  G11B5/33

CPC分类号： G11B5/398 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3929 ,  G11B5/3967 ,  H01F10/324 ,  H01F10/3254 ,  H01F10/3268 ,  H01L43/08 ,  G11B2005/0002 ,  G11B2005/0016 ,  G11B2005/3996 ,  Y10T29/49032 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49155

摘要： The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magnetoresistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a current flows in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-denisity recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.

摘要翻译： 磁阻效应元件是至少具有磁性层和抵抗磁性层的绝缘材料，半导体或反铁磁材料的中间层的多层结构，并且磁阻效应元件至少在相对的磁性层上形成端子， 使得电流在中间层中流动。 构成磁阻效应元件的所有磁性层的膜表面基本上与磁记录介质的记录表面成直角相对。 因此，可以极大地降低与磁记录介质的记录表面相对的磁性层的面积，因此可以通过具有一个磁记录介质的电流来检测来自高耐度记录磁记录介质的非常狭窄区域的磁场 穿透特性，穿过中间层。

公开(公告)号：US5726837A

公开(公告)日：1998-03-10

申请号：US328090

申请日：1994-10-24

申请人： Ryoichi Nakatani ,  Masahiro Kitada ,  Naoki Koyama ,  Isamu Yuito ,  Hisashi Takano ,  Eijin Moriwaki ,  Mikio Suzuki ,  Masaaki Futamoto ,  Fumio Kugiya ,  Yoshibumi Matsuda ,  Kazuo Shiiki ,  Yoshinori Miyamura ,  Kyo Akagi ,  Takeshi Nakao ,  Hirotsugu Fukuoka ,  Takayuki Munemoto ,  Tokuho Takagaki ,  Toshio Kobayashi ,  Hideo Tanabe ,  Noboru Shimizu

发明人： Ryoichi Nakatani ,  Masahiro Kitada ,  Naoki Koyama ,  Isamu Yuito ,  Hisashi Takano ,  Eijin Moriwaki ,  Mikio Suzuki ,  Masaaki Futamoto ,  Fumio Kugiya ,  Yoshibumi Matsuda ,  Kazuo Shiiki ,  Yoshinori Miyamura ,  Kyo Akagi ,  Takeshi Nakao ,  Hirotsugu Fukuoka ,  Takayuki Munemoto ,  Tokuho Takagaki ,  Toshio Kobayashi ,  Hideo Tanabe ,  Noboru Shimizu

IPC分类号： G01R33/09 ,  G11B5/39 ,  H01F10/32 ,  H01L43/08 ,  G11B5/33

CPC分类号： G11B5/398 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3929 ,  G11B5/3967 ,  H01F10/324 ,  H01F10/3254 ,  H01F10/3268 ,  H01L43/08 ,  G11B2005/0002 ,  G11B2005/0016 ,  G11B2005/3996 ,  Y10T29/49032 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49155

摘要： The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magnetoresistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a current flows in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.

摘要翻译： 磁阻效应元件是至少具有磁性层和抵抗磁性层的绝缘材料，半导体或反铁磁材料的中间层的多层结构，并且磁阻效应元件至少在相对的磁性层上形成端子， 使得电流在中间层中流动。 构成磁阻效应元件的所有磁性层的膜表面基本上与磁记录介质的记录表面成直角相对。 因此，能够极大地降低与磁记录介质的记录面对置的磁性层的面积，因此能够通过电流检测来自高密度记录磁记录介质的非常窄的区域的磁场 穿透特性，穿过中间层。

公开(公告)号：US5390061A

公开(公告)日：1995-02-14

申请号：US710775

申请日：1991-06-05

申请人： Ryoichi Nakatani ,  Masahiro Kitada ,  Naoki Koyama ,  Isamu Yuito ,  Hisashi Takano ,  Eijin Moriwaki ,  Mikio Suzuki ,  Masaaki Futamoto ,  Fumio Kugiya ,  Yoshibumi Matsuda ,  Kazuo Shiiki ,  Yoshinori Miyamura ,  Kyo Akagi ,  Takeshi Nakao ,  Hirotsugu Fukuoka ,  Takayuki Munemoto ,  Tokuho Takagaki ,  Toshio Kobayashi ,  Hideo Tanabe ,  Noboru Shimizu

发明人： Ryoichi Nakatani ,  Masahiro Kitada ,  Naoki Koyama ,  Isamu Yuito ,  Hisashi Takano ,  Eijin Moriwaki ,  Mikio Suzuki ,  Masaaki Futamoto ,  Fumio Kugiya ,  Yoshibumi Matsuda ,  Kazuo Shiiki ,  Yoshinori Miyamura ,  Kyo Akagi ,  Takeshi Nakao ,  Hirotsugu Fukuoka ,  Takayuki Munemoto ,  Tokuho Takagaki ,  Toshio Kobayashi ,  Hideo Tanabe ,  Noboru Shimizu

IPC分类号： G01R33/09 ,  G11B5/39 ,  H01F10/32 ,  H01L43/08 ,  G11B5/33

CPC分类号： G11B5/398 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3929 ,  G11B5/3967 ,  H01F10/324 ,  H01F10/3254 ,  H01F10/3268 ,  H01L43/08 ,  G11B2005/0002 ,  G11B2005/0016 ,  G11B2005/3996 ,  Y10T29/49032 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49155

摘要： The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magneto-resistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a current flows in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.

摘要翻译： 磁阻效应元件是至少具有磁性层和抵抗磁性层的绝缘材料，半导体或反铁磁材料的中间层的多层结构，并且磁阻效应元件具有至少形成在相对的磁体上的端子 层，使得电流在中间层中流动。 构成磁阻效应元件的所有磁性层的膜表面基本上与磁记录介质的记录表面成直角相对。 因此，能够极大地降低与磁记录介质的记录面对置的磁性层的面积，因此能够通过电流检测来自高密度记录磁记录介质的非常窄的区域的磁场 穿透特性，穿过中间层。