摘要:
To prevent such a situation that a signal from a pixel in a dark state is output at a level shifted from an originally set level to deteriorate an image quality, and to improve the image quality. A photoelectric conversion apparatus according to the present invention includes: a plurality of photoelectric conversion elements; a plurality of amplifying units for amplifying a signal in accordance with a photo-carrier generated in the photoelectric conversion elements; a plurality of signal holding units for holding output signals from the amplifying units through a plurality of switch units; and a control signal supplying unit for supplying a control signal to the switch units through a control line, in which the control line is sequentially connected to the plurality of switch units and has both ends connected to the control signal supplying units, or a change rate with time of an amplitude of a signal held by the signal holding units is set lower than a change rate with time of am amplitude of the control signal at the time of turning off the switch units.
摘要:
A pixel space is narrowed without increasing PN junction capacitance. A photoelectric conversion device includes a plurality of pixels arranged therein, each including a first impurity region of a first conductivity type forming a photoelectric conversion region, a second impurity region of a second conductivity type forming a signal acquisition region arranged in the first impurity region, a third impurity region of the first conductivity type and a fourth impurity region of the first conductivity type are arranged in a periphery of each pixel for isolating the each pixel, the fourth impurity region is disposed between adjacent pixels, and an impurity concentration of the fourth impurity region is smaller than an impurity concentration of the third impurity region.
摘要:
To prevent such a situation that a signal from a pixel in a dark state is output at a level shifted from an originally set level to deteriorate an image quality, and to improve the image quality. A photoelectric conversion apparatus according to the present invention includes: a plurality of photoelectric conversion elements; a plurality of amplifying units for amplifying a signal in accordance with a photo-carrier generated in the photoelectric conversion elements; a plurality of signal holding units for holding output signals from the amplifying units through a plurality of switch units; and a control signal supplying unit for supplying a control signal to the switch units through a control line, in which the control line is sequentially connected to the plurality of switch units and has both ends connected to the control signal supplying units, or a change rate with time of an amplitude of a signal held by the signal holding units is set lower than a change rate with time of am amplitude of the control signal at the time of turning off the switch units.
摘要:
To prevent such a situation that a signal from a pixel in a dark state is output at a level shifted from an originally set level to deteriorate an image quality, and to improve the image quality. A photoelectric conversion apparatus according to the present invention includes: a plurality of photoelectric conversion elements; a plurality of amplifying units for amplifying a signal in accordance with a photo-carrier generated in the photoelectric conversion elements; a plurality of signal holding units for holding output signals from the amplifying units through a plurality of switch units; and a control signal supplying unit for supplying a control signal to the switch units through a control line, in which the control line is sequentially connected to the plurality of switch units and has both ends connected to the control signal supplying units, or a change rate with time of an amplitude of a signal held by the signal holding units is set lower than a change rate with time of am amplitude of the control signal at the time of turning off the switch units.
摘要:
A pixel space is narrowed without increasing PN junction capacitance. A photoelectric conversion device includes a plurality of pixels arranged therein, each including a first impurity region of a first conductivity type forming a photoelectric conversion region, a second impurity region of a second conductivity type forming a signal acquisition region arranged in the first impurity region, a third impurity region of the first conductivity type and a fourth impurity region of the first conductivity type are arranged in a periphery of each pixel for isolating the each pixel, the fourth impurity region is disposed between adjacent pixels, and an impurity concentration of the fourth impurity region is smaller than an impurity concentration of the third impurity region.
摘要:
To prevent such a situation that a signal from a pixel in a dark state is output at a level shifted from an originally set level to deteriorate an image quality, and to improve the image quality. A photoelectric conversion apparatus according to the present invention includes: a plurality of photoelectric conversion elements; a plurality of amplifying units for amplifying a signal in accordance with a photo-carrier generated in the photoelectric conversion elements; a plurality of signal holding units for holding output signals from the amplifying units through a plurality of switch units; and a control signal supplying unit for supplying a control signal to the switch units through a control line, in which the control line is sequentially connected to the plurality of switch units and has both ends connected to the control signal supplying units, or a change rate with time of an amplitude of a signal held by the signal holding units is set lower than a change rate with time of am amplitude of the control signal at the time of turning off the switch units.
摘要:
A member for a solid-state image pickup device having a bonding plane with no gaps and a method for manufacturing the same are provided. The manufacturing method includes the steps of providing a first substrate provided with a photoelectric converter on its primary face and a first wiring structure, providing a second substrate provided with a part of a peripheral circuit on its primary face and a second wiring structure, and performing bonding so that the first substrate, the first wiring structure, the second wiring structure, and the second substrate are disposed in this order. In addition, at least one of an upper face of the first wiring structure and an upper face of the second wiring structure has a concave portion, and a conductive material forms a bottom face of the concave portion.
摘要:
To prevent two contacts that have different heights, share at least one interlayer insulating film and are disposed close to each other from being short-circuited to each other due to misalignment thereof, a semiconductor device according to the invention has a recess in an interlayer insulating film in which a first contact having a lower height, the recess being formed by the upper surface of the first contact, and a silicon nitride sidewall is formed in the recess to extend from the upper surface of the first contact and along the side surface of the recess.
摘要:
A machine tool 1 comprises a bed 11, a column 12, a spindle head 15, a spindle 16, a saddle 17, a table 18, a feed mechanism for moving the spindle head 15, the saddle 17 and the table 18 in Z-axis, Y-axis and X-axis directions respectively, a position detector for detecting the positions of the spindle head 15, saddle 17 and table 18, a controller for feedback controlling the feed mechanism, a position detector 51 for detecting the position of the spindle head 15, a position detector 54 for detecting the position of the spindle head 15, a position detector 57 for detecting the position of the table 18, and a measurement frame 50 which is configured with a different member from the bed 11 and the column 12 and on which readers 53, 56, 59 of the position detectors 51, 54, 57 are disposed.
摘要:
It is an object of the present invention to provide a solid-state imaging apparatus that outputs digital signals at high speed. A solid-state imaging apparatus is provided that includes plural analog-to-digital converters that convert analog signals obtained by photoelectric conversion into digital signals, plural digital memories that store the digital signals converted by the analog-to-digital converters, plural block digital output lines that are provided to correspond to blocks of the plural digital memories and to which the digital signals stored in the plural digital memories included in the blocks are output, a common digital output line that outputs the digital signals output from the plural block digital output lines, buffer circuits that buffer the digital signals output from the block digital output lines, and block selecting units that can switch the block digital output lines electrically connected to the common digital output line.