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公开(公告)号：US20130177841A1
公开(公告)日：2013-07-11
申请号：US13823206
申请日：2011-09-29
IPC分类号： G03F1/50
摘要： Provided is a mask blank that is improved in adhesion of a thin film for forming a transfer pattern to a resist, thus capable of suppressing the occurrence of collapse, chipping, or the like of a formed resist pattern. The mask blank has, on a transparent substrate 1, a thin film 2 which is for forming a transfer pattern and is made of a material containing a metal. The thin film 2 has a surface modified layer in the form of an oxide film containing a hydrocarbon. The surface modified layer of the thin film 2 can be formed by, for example, causing a highly concentrated ozone gas and an unsaturated hydrocarbon gas to act on the thin film.
摘要翻译： 提供了一种掩模坯料，其提高了用于将形成转印图案的薄膜粘合到抗蚀剂上，从而能够抑制所形成的抗蚀剂图案的崩溃，碎裂等的发生。 掩模坯料在透明基板1上具有用于形成转印图案并由含有金属的材料制成的薄膜2。 薄膜2具有含有烃的氧化膜形式的表面改性层。 薄膜2的表面改性层可以通过例如使高度浓缩的臭氧气体和不饱和烃气体作用于薄膜而形成。
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公开(公告)号：US09104112B2
公开(公告)日：2015-08-11
申请号：US13823206
申请日：2011-09-29
摘要： Provided is a mask blank that is improved in adhesion of a thin film for forming a transfer pattern to a resist, thus capable of suppressing the occurrence of collapse, chipping, or the like of a formed resist pattern. The mask blank has, on a transparent substrate 1, a thin film 2 which is for forming a transfer pattern and is made of a material containing a metal. The thin film 2 has a surface modified layer in the form of an oxide film containing a hydrocarbon. The surface modified layer of the thin film 2 can be formed by, for example, causing a highly concentrated ozone gas and an unsaturated hydrocarbon gas to act on the thin film.
摘要翻译： 提供了一种掩模坯料，其提高了用于将形成转印图案的薄膜粘合到抗蚀剂上，从而能够抑制所形成的抗蚀剂图案的崩溃，碎裂等的发生。 掩模坯料在透明基板1上具有用于形成转印图案并由含有金属的材料制成的薄膜2。 薄膜2具有含有烃的氧化膜形式的表面改性层。 薄膜2的表面改性层可以通过例如使高度浓缩的臭氧气体和不饱和烃气体作用于薄膜而形成。
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3.发明申请PHOTOMASK BLANK AND PRODUCTION METHOD THEREOF, AND PHOTOMASK PRODUCTION METHOD, AND SEMICONDUCTOR DEVICE PRODUCTION METHOD 有权光电隔离器及其制造方法，以及光电二极管生产方法和半导体器件生产方法公开(公告)号：US20120129084A1
公开(公告)日：2012-05-24
申请号：US13347425
申请日：2012-01-10
IPC分类号： G03F1/50
摘要： A photomask blank which is capable of preventing static buildup caused by electron beam pattern drawing for forming a resist pattern. The photomask blank provides a good pattern accuracy through optimization of the dry etching rate along the depth direction of the shielding film, and is capable of reducing the dry etching time by increasing the dry etching rate of the shielding film. The photomask blank includes a translucent substrate having thereon a shielding film composed mainly of chromium and the shielding film contains hydrogen. The shielding film is formed in such a manner that the film formation rate of the layer at the surface side is lower than the film formation rate of the layer at the translucent substrate side of the shielding film. The dry etching rate of the shielding film is lower at the translucent substrate side than at the surface side.
摘要翻译： 一种光掩模坯料，其能够防止由用于形成抗蚀剂图案的电子束图案拉伸引起的静电积聚。 光掩模坯料通过优化沿着屏蔽膜的深度方向的干蚀刻速率而提供良好的图案精度，并且通过提高屏蔽膜的干蚀刻速率能够减少干蚀刻时间。 光掩模坯料包括其上具有主要由铬构成的屏蔽膜的透光性基板，屏蔽膜含有氢。 屏蔽膜以这样的方式形成，使得表面侧的层的成膜速率低于屏蔽膜的透光性基板侧的层的成膜速度。 透光性基板侧的屏蔽膜的干蚀刻率比表面侧低。
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4.发明授权Photomask blank and production method thereof, and photomask production method, and semiconductor device production method 有权光掩模坯及其制造方法以及光掩模的制造方法以及半导体装置的制造方法公开(公告)号：US08114556B2
公开(公告)日：2012-02-14
申请号：US12066360
申请日：2006-09-08
IPC分类号： G03F1/00
摘要： There are provided a photomask blank which is capable of preventing static buildup caused by electron beam pattern drawing for forming a resist pattern, a photomask blank which provides a good pattern accuracy through optimization of the dry etching rate along the depth direction of the shielding film, and a photomask blank which is capable of reducing the dry etching time by increasing the dry etching rate of the shielding film.The photomask blank of the present invention includes a translucent substrate having thereon a shielding film composed mainly of chromium and the shielding film contains hydrogen. The shielding film is formed in such a manner that the film formation rate of the layer at the surface side is lower than the film formation rate of the layer at the translucent substrate side of the shielding film. The dry etching rate of the shielding film is lower at the translucent substrate side than at the surface side.
摘要翻译： 提供了一种光掩模坯料，其能够防止由用于形成抗蚀剂图案的电子束图案拉伸引起的静电积聚，通过优化沿着屏蔽膜的深度方向的干蚀刻速率而提供良好图案精度的光掩模坯料， 以及通过提高屏蔽膜的干蚀刻速度能够减少干蚀刻时间的光掩模坯料。 本发明的光掩模坯料包括其上具有主要由铬构成的屏蔽膜的透光性基板，屏蔽膜含有氢。 屏蔽膜以这样的方式形成，使得表面侧的层的成膜速率低于屏蔽膜的透光性基板侧的层的成膜速度。 透光性基板侧的屏蔽膜的干蚀刻率比表面侧低。
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5.发明申请PHOTOMASK BLANK AND PRODUCTION METHOD THEREOF, AND PHOTOMASK PRODUCTION METHOD, AND SEMICONDUCTOR DEVICE PRODUCTION METHOD 有权光电隔离器及其制造方法，以及光电二极管生产方法和半导体器件生产方法公开(公告)号：US20090155698A1
公开(公告)日：2009-06-18
申请号：US12066360
申请日：2006-09-08
摘要： There are provided a photomask blank which is capable of preventing static buildup caused by electron beam pattern drawing for forming a resist pattern, a photomask blank which provides a good pattern accuracy through optimization of the dry etching rate along the depth direction of the shielding film, and a photomask blank which is capable of reducing the dry etching time by increasing the dry etching rate of the shielding film.The photomask blank of the present invention includes a translucent substrate having thereon a shielding film composed mainly of chromium and the shielding film contains hydrogen. The shielding film is formed in such a manner that the film formation rate of the layer at the surface side is lower than the film formation rate of the layer at the translucent substrate side of the shielding film. The dry etching rate of the shielding film is lower at the translucent substrate side than at the surface side.
摘要翻译： 提供了一种光掩模坯料，其能够防止由用于形成抗蚀剂图案的电子束图案拉伸引起的静电积聚，通过优化沿着屏蔽膜的深度方向的干蚀刻速率而提供良好图案精度的光掩模坯料， 以及通过提高屏蔽膜的干蚀刻速度能够减少干蚀刻时间的光掩模坯料。 本发明的光掩模坯料包括其上具有主要由铬构成的屏蔽膜的透光性基板，屏蔽膜含有氢。 屏蔽膜以这样的方式形成，使得表面侧的层的成膜速率低于屏蔽膜的透光性基板侧的层的成膜速度。 透光性基板侧的屏蔽膜的干蚀刻率比表面侧低。
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6.发明授权Photomask blank and production method thereof, and photomask production method, and semiconductor device production method 有权光掩模坯及其制造方法以及光掩模的制造方法以及半导体装置的制造方法公开(公告)号：US08697315B2
公开(公告)日：2014-04-15
申请号：US13347425
申请日：2012-01-10
IPC分类号： G03F1/00
摘要： A photomask blank which is capable of preventing static buildup caused by electron beam pattern drawing for forming a resist pattern. The photomask blank provides a good pattern accuracy through optimization of the dry etching rate along the depth direction of the shielding film, and is capable of reducing the dry etching time by increasing the dry etching rate of the shielding film. The photomask blank includes a translucent substrate having thereon a shielding film composed mainly of chromium and the shielding film contains hydrogen. The shielding film is formed in such a manner that the film formation rate of the layer at the surface side is lower than the film formation rate of the layer at the translucent substrate side of the shielding film. The dry etching rate of the shielding film is lower at the translucent substrate side than at the surface side.
摘要翻译： 一种光掩模坯料，其能够防止由用于形成抗蚀剂图案的电子束图案拉伸引起的静电积聚。 光掩模坯料通过优化沿着屏蔽膜的深度方向的干蚀刻速率而提供良好的图案精度，并且通过提高屏蔽膜的干蚀刻速率能够减少干蚀刻时间。 光掩模坯料包括其上具有主要由铬构成的屏蔽膜的透光性基板，屏蔽膜含有氢。 屏蔽膜以这样的方式形成，使得表面侧的层的成膜速率低于屏蔽膜的透光性基板侧的层的成膜速度。 透光性基板侧的屏蔽膜的干蚀刻率比表面侧低。
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7.发明授权Surface treatment method for a mask blank, method of manufacturing a mask blank, and method of manufacturing a mask 有权面罩坯料的表面处理方法，掩模坯料的制造方法以及掩模的制造方法公开(公告)号：US08802334B2
公开(公告)日：2014-08-12
申请号：US13440539
申请日：2012-04-05
IPC分类号： G03F1/00
摘要： Provided is a mask blank surface treatment method for surface-treating, using a treatment liquid, a surface of a thin film, to be formed into a transfer pattern, of a mask blank having the thin film on a substrate. The thin film is made of a material that can be etched by ion-based dry etching. The concentration of an etching inhibitor contained in the treatment liquid is 0.3 ppb or less.
摘要翻译： 提供了一种掩模坯料表面处理方法，用于将具有薄膜的掩模坯料在基板上进行表面处理，使用处理液，形成转印图案的薄膜表面。 该薄膜由可以通过基于离子的干蚀刻蚀刻的材料制成。 包含在处理液中的蚀刻抑制剂的浓度为0.3ppb以下。
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8.发明申请Photomask Blank, Photomask Manufacturing Method and Semiconductor Device Manufacturing Method 审中-公开光掩模空白，光掩模制造方法和半导体器件制造方法公开(公告)号：US20080305406A1
公开(公告)日：2008-12-11
申请号：US11631472
申请日：2005-07-08
摘要： By increasing the dry etching rate of a light shielding film, the dry etching time can be shortened so that loss of a resist film is reduced. As a result, a reduction in thickness (to 300 nm or less) of the resist film becomes possible so that pattern resolution and pattern accuracy (CD accuracy) can be improved. Further, by shortening the dry etching time, a photomask blank and a photomask manufacturing method are provided, which can form a pattern of the light shielding film having an excellent sectional shape. In a photomask blank having a light shielding film on an optically transparent substrate, the photomask blank being a mask blank for a dry etching process adapted for a photomask producing method of patterning the light shielding film by the dry etching process using as a mask a pattern of a resist formed on the light shielding film, the light shielding film is made of a material having a selectivity exceeding 1 with respect to the resist in the dry etching process.
摘要翻译： 通过提高遮光膜的干蚀刻速度，可以缩短干蚀刻时间，降低抗蚀剂膜的损失。 结果，可以减小抗蚀剂膜的厚度（至300nm或更小），从而可以提高图案分辨率和图案精度（CD精度）。 此外，通过缩短干蚀刻时间，提供了可以形成具有优异截面形状的遮光膜的图案的光掩模坯料和光掩模制造方法。 在具有在光学透明基板上具有遮光膜的光掩模坯料中，光掩模坯料是用于干蚀刻工艺的掩模坯料，其适用于通过使用掩模图案的干蚀刻工艺对遮光膜进行图案化的光掩模制造方法 形成在遮光膜上的抗蚀剂，在干蚀刻工艺中，光屏蔽膜由相对于抗蚀剂选择性超过1的材料制成。
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9.发明授权公开(公告)号：US08221941B2
公开(公告)日：2012-07-17
申请号：US12647808
申请日：2009-12-28
申请人： Toshiyuki Suzuki , Masahiro Hashimoto , Kazunori Ono , Ryo Ohkubo , Kazuya Sakai
发明人： Toshiyuki Suzuki , Masahiro Hashimoto , Kazunori Ono , Ryo Ohkubo , Kazuya Sakai
IPC分类号： G03F1/22
CPC分类号： G03F1/32
摘要： A thin film made of a material containing a metal and silicon is formed on a light-transmissive substrate. Then, a treatment is performed to modify a main surface of the thin film in advance so that when exposure light having a wavelength of 200 nm or less is accumulatively irradiated on a thin film pattern of a photomask to be produced by patterning the thin film, the transfer characteristic of the thin film pattern does not change more than a predetermined degree. This treatment is performed by carrying out, for example, a heat treatment in an atmosphere containing oxygen at 450° C. to 900° C.
摘要翻译： 在透光性基板上形成由含有金属和硅的材料构成的薄膜。 然后，进行处理以预先修改薄膜的主表面，使得当将具有200nm或更小的波长的曝光光累积地照射到通过对薄膜进行图案化而制造的光掩模的薄膜图案上时， 薄膜图案的转印特性不会超过预定的程度。 该处理通过例如在450℃〜900℃的含氧气氛中进行热处理来进行。
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10.发明授权Mask blank, method of manufacturing the same, transfer mask, and method of manufacturing the same 有权掩模毛坯，其制造方法，转印掩模及其制造方法公开(公告)号：US09091934B2
公开(公告)日：2015-07-28
申请号：US13995751
申请日：2011-12-22
申请人： Kazuya Sakai , Masahiro Hashimoto
发明人： Kazuya Sakai , Masahiro Hashimoto
IPC分类号： G03F1/50 , H01L21/3065 , G03F1/46 , H01L21/308 , H01L21/3213 , G03F1/82
CPC分类号： G03F1/50 , G03F1/46 , G03F1/82 , H01L21/3065 , H01L21/3081 , H01L21/3213 , H01L21/32136
摘要： Provided is a method of manufacturing a mask blank that is improved in cleaning resistance to ozone cleaning or the like, thus capable of preventing degradation of the mask performance due to the cleaning. The method is for manufacturing a mask blank having, on a substrate, a thin film which is formed at its surface with an antireflection layer made of a material containing a transition metal, and carries out a treatment of causing a highly concentrated ozone gas with a concentration of 50 to 100 vol % to act on the antireflection layer to thereby form a surface modified layer comprising a strong oxide film containing an oxide of the transition metal at a surface of the antireflection layer.
摘要翻译： 提供了一种制造掩模坯料的方法，该掩模坯料具有改进的耐臭氧清洁等的清洁性能，因此能够防止由于清洁而引起的掩模性能的劣化。 该方法用于制造掩模坯料，其在基板上具有在其表面形成有由含有过渡金属的材料制成的抗反射层的薄膜，并进行使高浓度的臭氧气体与 浓度为50〜100体积％，从而形成表面改性层，该表面改性层包含在抗反射层的表面含有过渡金属的氧化物的强氧化物膜。
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