公开(公告)号：US20080302952A1

公开(公告)日：2008-12-11

申请号：US12133536

申请日：2008-06-05

申请人： Kazuyoshi Yamashita ,  Yoshiharu Kudoh

发明人： Kazuyoshi Yamashita ,  Yoshiharu Kudoh

IPC分类号： G01J1/04

CPC分类号： G02B5/201 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14685 ,  H04N9/045 ,  H04N2209/045

摘要： There is provided a solid-state imaging device including a substrate of which surface is provided with a pixel area where a plurality of pixels arranged, each pixel including a photoelectric converting element to receive light from a subject image and perform photoelectric conversion on the received light to generate signal charge, and a surrounding area that is positioned around the pixel area and that includes a surrounding circuit to process the signal charge generated by the photoelectric converting elements. The solid-state imaging device includes a color filter facing the substrate so as to receive the light from the subject image in a surface corresponding to the surface of the substrate and to allow the light to transmit therethrough onto the surface of the substrate. The color filter includes a first colored layer and a second colored layer.

摘要翻译： 提供了一种固态成像装置，其包括：基板，其表面设置有排列有多个像素的像素区域，每个像素包括光电转换元件，用于接收来自被摄体图像的光并对所接收的光进行光电转换 以产生信号电荷，以及围绕像素区域定位并且包括周围电路以处理由光电转换元件产生的信号电荷的周围区域。 固态成像装置包括面向衬底的滤色器，以便在与衬底的表面相对应的表面中接收来自被摄体图像的光，并且允许光透射穿过衬底的表面。 滤色器包括第一着色层和第二着色层。

公开(公告)号：US07786426B2

公开(公告)日：2010-08-31

申请号：US12133536

申请日：2008-06-05

申请人： Kazuyoshi Yamashita ,  Yoshiharu Kudoh

发明人： Kazuyoshi Yamashita ,  Yoshiharu Kudoh

IPC分类号： G01J3/50 ,  H01L27/00 ,  H04N5/335

CPC分类号： G02B5/201 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14685 ,  H04N9/045 ,  H04N2209/045

摘要： There is provided a solid-state imaging device including a substrate of which surface is provided with a pixel area where a plurality of pixels arranged, each pixel including a photoelectric converting element to receive light from a subject image and perform photoelectric conversion on the received light to generate signal charge, and a surrounding area that is positioned around the pixel area and that includes a surrounding circuit to process the signal charge generated by the photoelectric converting elements. The solid-state imaging device includes a color filter facing the substrate so as to receive the light from the subject image in a surface corresponding to the surface of the substrate and to allow the light to transmit therethrough onto the surface of the substrate. The color filter includes a first colored layer and a second colored layer.

摘要翻译： 提供了一种固态成像装置，其包括：基板，其表面设置有排列有多个像素的像素区域，每个像素包括光电转换元件，用于接收来自被摄体图像的光并对所接收的光进行光电转换 以产生信号电荷，以及围绕像素区域定位并且包括周围电路以处理由光电转换元件产生的信号电荷的周围区域。 固态成像装置包括面向衬底的滤色器，以便在与衬底的表面相对应的表面中接收来自被摄体图像的光，并且允许光透射穿过衬底的表面。 滤色器包括第一着色层和第二着色层。

公开(公告)号：US4628404A

公开(公告)日：1986-12-09

申请号：US817517

申请日：1986-01-09

申请人： Nobuo Yokoe ,  Takashi Okawa ,  Nobuyoshi Fujikawa ,  Kazuyoshi Yamashita

发明人： Nobuo Yokoe ,  Takashi Okawa ,  Nobuyoshi Fujikawa ,  Kazuyoshi Yamashita

IPC分类号： C04B35/46 ,  C04B35/462 ,  H01B3/12 ,  H01G4/12 ,  H01G4/10

CPC分类号： C04B35/462 ,  H01G4/1218

摘要： A dielectric ceramic composition prepared by adding 0.1 to 1.3% of B.sub.2 O.sub.3, 1.0 to 3.0% of SiO.sub.2 and 0.5 to 3.0% of ZnO to a composition comprising 18.0 to 27.0% of BaTiO.sub.2, 31.6 to 36.3% of Nd.sub.2 O.sub.3, 27.6 to 35.5% of TiO.sub.2, 2.5 to 8.1% of Bi.sub.2 O.sub.3 and 5.6 to 9.0% of Pb.sub.3 O.sub.4, all percentages being by weight. This dielectric composition has a high dielectric constant and a temperature coefficient controlled within a narrow range and can be fired at relatively low temperatures. Because of these properties, it is used as a multilayer ceramic capacitor in combination with an electrode composed of an Ag-Pd alloy containing a major amount of Ag.

摘要翻译： 通过将0.1〜1.3％的B 2 O 3，1.0〜3.0％的SiO 2和0.5〜3.0％的ZnO添加到包含18.0〜27.0％的BaTiO 2，31.6〜36.3％的Nd 2 O 3，27.6〜35.5％的BaTiO 2的组合物中制备的电介质陶瓷组合物 TiO 2，2.5〜8.1％的Bi 2 O 3和5.6〜9.0％的Pb 3 O 4，所有的百分数均为重量百分比。 该电介质组合物具有高介电常数和温度系数控制在窄范围内并且可以在相对低的温度下烧制。 由于这些性质，它被用作与包含主要量的Ag的Ag-Pd合金组成的电极的多层陶瓷电容器。

公开(公告)号：US20130050548A1

公开(公告)日：2013-02-28

申请号：US13587324

申请日：2012-08-16

申请人： Kazuyoshi Yamashita

发明人： Kazuyoshi Yamashita

IPC分类号： H04N5/335

CPC分类号： H01L27/14621 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/1464

摘要： A solid-state image sensing device includes a light receiving layer and a shutter layer. The light receiving layer has a photoelectric conversion part arranged in a plane state and configured to convert received light into an electric signal. The shutter layer is configured to control transmission of the light to be incident on the light receiving layer. In the solid-state image sensing device, an interval between the light receiving layer and the shutter layer is less than or equal to a length of a shutter element formed in the shutter layer.

摘要翻译： 固体摄像装置包括光接收层和快门层。 光接收层具有布置成平面状态并被配置为将接收的光转换为电信号的光电转换部。 快门层被配置为控制要入射在光接收层上的光的透射。 在固体摄像装置中，光接收层和遮光层之间的间隔小于或等于形成在遮光层中的快门元件的长度。

公开(公告)号：US08809922B2

公开(公告)日：2014-08-19

申请号：US13592538

申请日：2012-08-23

申请人： Hitoshi Moriya ,  Hiroaki Ishiwata ,  Kazuyoshi Yamashita ,  Hiroyuki Mori

发明人： Hitoshi Moriya ,  Hiroaki Ishiwata ,  Kazuyoshi Yamashita ,  Hiroyuki Mori

IPC分类号： H01L31/062

CPC分类号： H01L27/1461 ,  H01L27/14616 ,  H01L27/1463 ,  H01L27/14645

摘要： Disclosed is a solid-state image sensing device including: a first photoelectric conversion element having a first semiconductor region of a first conductivity type formed inside a semiconductor substrate; a second photoelectric conversion element having a second semiconductor region of a first conductivity type formed at a deeper position of the semiconductor substrate than the first photoelectric conversion element; a gate electrode laminated on the semiconductor substrate and to which a predetermined voltage is applied at a charge transfer time; a floating diffusion region to which the charges accumulated in the first photoelectric conversion element and the second photoelectric conversion element are transferred at the charge transfer time; and a third semiconductor region of a first conductivity type arranged between the first semiconductor region and the second semiconductor region in a depth direction of the semiconductor.

摘要翻译： 公开了一种固态摄像装置，包括：第一光电转换元件，其具有形成在半导体衬底内的第一导电类型的第一半导体区域; 第二光电转换元件，其具有形成在所述半导体衬底的比所述第一光电转换元件更深的位置处的第一导电类型的第二半导体区域; 层叠在所述半导体衬底上并且在电荷转移时间施加了预定电压的栅电极; 在第一光电转换元件和第二光电转换元件中累积的电荷在电荷转移时间被转移到的浮动扩散区域; 以及在半导体的深度方向上布置在第一半导体区域和第二半导体区域之间的第一导电类型的第三半导体区域。

公开(公告)号：US20100230583A1

公开(公告)日：2010-09-16

申请号：US12729295

申请日：2010-03-23

申请人： Masashi Nakata ,  Shinichiro Izawa ,  Kazuyoshi Yamashita

发明人： Masashi Nakata ,  Shinichiro Izawa ,  Kazuyoshi Yamashita

IPC分类号： H01L31/0232 ,  H01L31/18 ,  H01L27/146

CPC分类号： H01L27/14625 ,  H01L27/14605 ,  H01L27/14621 ,  H01L27/14641 ,  H01L27/14685

摘要： A solid state image pickup device includes a pixel section defined by unit pixels arrayed in line and row directions of a semiconductor substrate. Each of the unit pixels includes a photoelectric transducer that is formed on the semiconductor substrate and converts incident light into a signal charge, a waveguide that is formed above the photoelectric transducer and guides the incident light to the photoelectric transducer, and a microlens that is formed above the waveguide and guides the incident light to an end of light incident side of the waveguide. The waveguide has a columnar body with a constant cross section from the end of light incident side to an end of light exit side, and is arranged such that a center of rays of the incident light incident from the microlens on the end of light incident side of the waveguide is aligned with a central axis of the waveguide.

摘要翻译： 固态图像拾取装置包括由半导体衬底的行方向和行方向排列的单位像素限定的像素部。 每个单位像素包括形成在半导体衬底上并将入射光转换成信号电荷的光电变换器，形成在光电变换器上方并将入射光引导到光电变换器的波导和形成的微透镜 在波导上方并将入射光引导到波导的光入射侧的一端。 波导管具有从光入射侧的端部到光出射侧的端部具有恒定横截面的柱状体，并且被布置成使得从入射侧的微透镜入射的入射光的入射光的中心 的波导与波导的中心轴对准。

公开(公告)号：US5412106A

公开(公告)日：1995-05-02

申请号：US137790

申请日：1993-10-19

申请人： Kazuyoshi Yamashita ,  Kenji Saito ,  Shinzo Seko

发明人： Kazuyoshi Yamashita ,  Kenji Saito ,  Shinzo Seko

IPC分类号： C07D333/22 ,  C07D333/24

CPC分类号： C07D333/22

摘要： There is disclosed a process for the production of 2-thiophene aldehydes, in which the 2-thiophene aldehydes are obtained by the formylation of thiophene or derivatives thereof with formamides and phosgene.

摘要翻译： 公开了制备2-噻吩醛的方法，其中2-噻吩醛通过噻吩甲酰化或其衍生物与甲酰胺和光气而得到。

公开(公告)号：US08902347B2

公开(公告)日：2014-12-02

申请号：US13587324

申请日：2012-08-16

申请人： Kazuyoshi Yamashita

发明人： Kazuyoshi Yamashita

IPC分类号： H04N5/225 ,  H04N5/335 ,  H01L27/146

CPC分类号： H01L27/14621 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/1464

摘要： A solid-state image sensing device includes a light receiving layer and a shutter layer. The light receiving layer has a photoelectric conversion part arranged in a plane state and configured to convert received light into an electric signal. The shutter layer is configured to control transmission of the light to be incident on the light receiving layer. In the solid-state image sensing device, an interval between the light receiving layer and the shutter layer is less than or equal to a length of a shutter element formed in the shutter layer.

摘要翻译： 固体摄像装置包括光接收层和快门层。 光接收层具有布置成平面状态并被配置为将接收的光转换为电信号的光电转换部。 快门层被配置为控制要入射在光接收层上的光的透射。 在固体摄像装置中，光接收层和遮光层之间的间隔小于或等于形成在遮光层中的快门元件的长度。

公开(公告)号：US20130049081A1

公开(公告)日：2013-02-28

申请号：US13592538

申请日：2012-08-23

申请人： Hitoshi Moriya ,  Hiroaki Ishiwata ,  Kazuyoshi Yamashita ,  Hiroyuki Mori

发明人： Hitoshi Moriya ,  Hiroaki Ishiwata ,  Kazuyoshi Yamashita ,  Hiroyuki Mori

IPC分类号： H01L31/113

CPC分类号： H01L27/1461 ,  H01L27/14616 ,  H01L27/1463 ,  H01L27/14645

摘要： Disclosed is a solid-state image sensing device including: a first photoelectric conversion element having a first semiconductor region of a first conductivity type formed inside a semiconductor substrate; a second photoelectric conversion element having a second semiconductor region of a first conductivity type formed at a deeper position of the semiconductor substrate than the first photoelectric conversion element; a gate electrode laminated on the semiconductor substrate and to which a predetermined voltage is applied at a charge transfer time; a floating diffusion region to which the charges accumulated in the first photoelectric conversion element and the second photoelectric conversion element are transferred at the charge transfer time; and a third semiconductor region of a first conductivity type arranged between the first semiconductor region and the second semiconductor region in a depth direction of the semiconductor.

摘要翻译： 公开了一种固态摄像装置，包括：第一光电转换元件，其具有形成在半导体衬底内的第一导电类型的第一半导体区域; 第二光电转换元件，其具有形成在所述半导体衬底的比所述第一光电转换元件更深的位置处的第一导电类型的第二半导体区域; 层叠在所述半导体衬底上并且在电荷转移时间施加了预定电压的栅电极; 在第一光电转换元件和第二光电转换元件中累积的电荷在电荷转移时间被转移到的浮动扩散区域; 以及在半导体的深度方向上布置在第一半导体区域和第二半导体区域之间的第一导电类型的第三半导体区域。

公开(公告)号：US08111340B2

公开(公告)日：2012-02-07

申请号：US11849590

申请日：2007-09-04

申请人： Kazuyoshi Yamashita ,  Yuichi Yamaguchi ,  Kazunori Hara

发明人： Kazuyoshi Yamashita ,  Yuichi Yamaguchi ,  Kazunori Hara

IPC分类号： G02F1/1336

CPC分类号： G02F1/136227 ,  G02F1/136213 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1255

摘要： A display apparatus includes scanning lines; signal lines crossing the scanning lines; thin-film transistors connected to the scanning lines and the signal lines; capacitors connected to the thin-film transistors; interlayer insulating films disposed over the scanning lines with the signal lines, the thin-film transistors, and the capacitors disposed between or on the interlayer insulating films; upper interlayer insulating films disposed above the signal lines, the thin-film transistors, and the capacitors; common lines disposed between or on the upper interlayer insulating films; pixel electrodes disposed between or on the upper interlayer insulating films; and connection holes continuously penetrating the interlayer insulating films disposed between the common lines and the capacitors. The common lines and the capacitors are directly connected via the connection holes, and the connection holes have a ratio of depth to opening width of more than 1.

摘要翻译： 显示装置包括扫描线; 穿过扫描线的信号线; 连接到扫描线和信号线的薄膜晶体管; 连接到薄膜晶体管的电容器; 层间绝缘膜设置在扫描线上，信号线，薄膜晶体管和设置在层间绝缘膜之间或之间的电容器; 设置在信号线上方的上层绝缘膜，薄膜晶体管和电容器; 布置在上层间绝缘膜之间或之上的公共线; 设置在上层间绝缘膜之间或之上的像素电极; 以及连接孔贯穿穿过公共线和电容器之间的层间绝缘膜。 公共线和电容器通过连接孔直接连接，连接孔的深度与开口宽度之比大于1。