公开(公告)号：US20060145215A1

公开(公告)日：2006-07-06

申请号：US11325975

申请日：2006-01-04

申请人： Kee-Hyun Paik ,  Jeong-Ho Lyu ,  Chang-Sub Lee ,  Keun-Ho Lee

发明人： Kee-Hyun Paik ,  Jeong-Ho Lyu ,  Chang-Sub Lee ,  Keun-Ho Lee

IPC分类号： H01L31/062

CPC分类号： H01L27/14603 ,  H01L27/14689

摘要： In an embodiment, an image sensor includes an isolation layer disposed in a semiconductor substrate to define a first active region and a second active region extending from the first active region. A photodiode is disposed in a portion of the first active region. A floating diffusion region is provided in the second active region at a position spaced apart from the photodiode. A transfer gate electrode is disposed on the second active region between the photodiode and the floating diffusion region. The transfer gate electrode is disposed to cover both sidewalls and an upper portion of the second active region. The transfer gate electrode has a region extending onto the first active region and overlapping the photodiode. The photodiode has a protrusion into the second active region at the portion adjacent to the transfer gate electrode. A deep n-impurity region of the photodiode extends in the protrusion.

摘要翻译： 在一个实施例中，图像传感器包括设置在半导体衬底中以限定第一有源区和从第一有源区延伸的第二有源区的隔离层。 光电二极管设置在第一有源区的一部分中。 浮动扩散区设置在与光电二极管间隔开的位置处的第二有源区中。 传输栅电极设置在光电二极管和浮动扩散区之间的第二有源区上。 转移栅电极设置成覆盖第二有源区的两个侧壁和上部。 传输栅电极具有延伸到第一有源区上并与光电二极管重叠的区域。 光电二极管在与传输栅电极相邻的部分具有到第二有源区的突起。 光电二极管的深n杂质区域在突起中延伸。

公开(公告)号：US20100207170A1

公开(公告)日：2010-08-19

申请号：US12770957

申请日：2010-04-30

申请人： Kee-Hyun Paik ,  Jeong-Ho Lyu ,  Chang-Sub Lee ,  Keun-Ho Lee

发明人： Kee-Hyun Paik ,  Jeong-Ho Lyu ,  Chang-Sub Lee ,  Keun-Ho Lee

IPC分类号： H01L31/112

CPC分类号： H01L27/14603 ,  H01L27/14689

摘要： In an embodiment, an image sensor includes an isolation layer disposed in a semiconductor substrate to define a first active region and a second active region extending from the first active region. A photodiode is disposed in a portion of the first active region. A floating diffusion region is provided in the second active region at a position spaced apart from the photodiode. A transfer gate electrode is disposed on the second active region between the photodiode and the floating diffusion region. The transfer gate electrode is disposed to cover both sidewalls and an upper portion of the second active region. The transfer gate electrode has a region extending onto the first active region and overlapping the photodiode. The photodiode has a protrusion into the second active region at the portion adjacent to the transfer gate electrode. A deep n-impurity region of the photodiode extends in the protrusion.

摘要翻译： 在一个实施例中，图像传感器包括设置在半导体衬底中以限定第一有源区和从第一有源区延伸的第二有源区的隔离层。 光电二极管设置在第一有源区的一部分中。 浮动扩散区设置在与光电二极管间隔开的位置处的第二有源区中。 传输栅电极设置在光电二极管和浮动扩散区之间的第二有源区上。 转移栅电极设置成覆盖第二有源区的两个侧壁和上部。 传输栅电极具有延伸到第一有源区上并与光电二极管重叠的区域。 光电二极管在与传输栅电极相邻的部分具有到第二有源区的突起。 光电二极管的深n杂质区域在突起中延伸。

公开(公告)号：US07741143B2

公开(公告)日：2010-06-22

申请号：US11325975

申请日：2006-01-04

申请人： Kee-Hyun Paik ,  Jeong-Ho Lyu ,  Chang-Sub Lee ,  Keun-Ho Lee

发明人： Kee-Hyun Paik ,  Jeong-Ho Lyu ,  Chang-Sub Lee ,  Keun-Ho Lee

IPC分类号： H01L31/103

CPC分类号： H01L27/14603 ,  H01L27/14689

摘要： In an embodiment, an image sensor includes an isolation layer disposed in a semiconductor substrate to define a first active region and a second active region extending from the first active region. A photodiode is disposed in a portion of the first active region. A floating diffusion region is provided in the second active region at a position spaced apart from the photodiode. A transfer gate electrode is disposed on the second active region between the photodiode and the floating diffusion region. The transfer gate electrode is disposed to cover both sidewalls and an upper portion of the second active region. The transfer gate electrode has a region extending onto the first active region and overlapping the photodiode. The photodiode has a protrusion into the second active region at the portion adjacent to the transfer gate electrode. A deep n-impurity region of the photodiode extends in the protrusion.

摘要翻译： 在一个实施例中，图像传感器包括设置在半导体衬底中以限定第一有源区和从第一有源区延伸的第二有源区的隔离层。 光电二极管设置在第一有源区的一部分中。 浮动扩散区设置在与光电二极管间隔开的位置处的第二有源区中。 传输栅电极设置在光电二极管和浮动扩散区之间的第二有源区上。 转移栅电极设置成覆盖第二有源区的两个侧壁和上部。 传输栅电极具有延伸到第一有源区上并与光电二极管重叠的区域。 光电二极管在与传输栅电极相邻的部分具有到第二有源区的突起。 光电二极管的深n杂质区域在突起中延伸。

公开(公告)号：US20080164509A1

公开(公告)日：2008-07-10

申请号：US11972243

申请日：2008-01-10

申请人： Seung-Chul Lee ,  Keun-Ho Lee ,  Choong-Ho Lee ,  Byung-Yong Choi

发明人： Seung-Chul Lee ,  Keun-Ho Lee ,  Choong-Ho Lee ,  Byung-Yong Choi

IPC分类号： H01L29/788 ,  H01L21/336

CPC分类号： H01L27/11521 ,  G11C16/0483 ,  G11C16/3418 ,  H01L27/115 ,  H01L27/11524

摘要： A nonvolatile memory device includes a semiconductor substrate of a first conductivity type, a plurality of word lines on the semiconductor substrate, each the plurality of word lines including a floating gate of a second conductivity type. A ground select line and a string select line are disposed on respective sides of word lines. An impurity region of the second conductivity type underlies a first word line adjacent the ground select line. The device may further include a second impurity region of the second conductivity type underlying a second word line adjacent the string select line. In still further embodiments, the device may further include third impurity regions of the second conductivity type underlying respective third word lines between the first word line and the second word line. Methods of forming such devices are also provided.

摘要翻译： 非易失性存储器件包括第一导电类型的半导体衬底，半导体衬底上的多个字线，多条字线包括第二导电类型的浮置栅极。 地线选择线和串选择线设置在字线的相应侧上。 第二导电类型的杂质区域位于与地选线相邻的第一字线的正下方。 该器件还可以包括第二导电类型的第二杂质区域，位于与串选择线相邻的第二字线下方。 在另外的实施例中，器件还可以包括在第一字线和第二字线之间的相应第三字线下方的第二导电类型的第三杂质区。 还提供了形成这种装置的方法。

公开(公告)号：US5485496A

公开(公告)日：1996-01-16

申请号：US310489

申请日：1994-09-22

申请人： Keun-Ho Lee ,  Chih-Chang Chu

发明人： Keun-Ho Lee ,  Chih-Chang Chu

IPC分类号： A61L2/08 ,  A61L17/12 ,  G21K5/00

CPC分类号： A61L17/12 ,  A61L2/08 ,  G21K5/00

摘要： Biomaterial medical devices or products, e.g., absorbable sutures or joint prostheses components, are gamma irradiation sterilized in the substantial absence of oxygen (e.g., vacuum treatment to 5.times.10.sup.-6 torr) while being maintained at a temperature about that of liquid nitrogen, with improved strength loss resistance compared to gamma irradiation sterilization under ambient conditions.

摘要翻译： 生物材料医疗装置或产品，例如可吸收缝合线或关节假体组件，在相当于没有氧气（例如，5×10 -6乇的真空处理）的同时被γ辐射灭菌，同时保持在液氮附近的温度， 与环境条件下的γ辐射灭菌相比，抗强度损失阻力。

公开(公告)号：US20120049266A1

公开(公告)日：2012-03-01

申请号：US13216004

申请日：2011-08-23

申请人： Sang-Woo OH ,  Dae-Sin Kim ,  Young-Kwan Park ,  Keun-Ho Lee ,  Seon-Young Lee

发明人： Sang-Woo OH ,  Dae-Sin Kim ,  Young-Kwan Park ,  Keun-Ho Lee ,  Seon-Young Lee

IPC分类号： H01L29/788 ,  H01L21/283

CPC分类号： H01L27/11517 ,  H01L21/28273 ,  H01L21/76224 ,  H01L21/764 ,  H01L27/11519 ,  H01L27/11521 ,  H01L29/0653

摘要： A semiconductor device including a substrate having a trench formed therein, a plurality of gate structures, an isolation layer pattern and an insulating interlayer pattern. The substrate includes a plurality of active regions defined by the trench and spaced apart from each other in a second direction. Each of the active regions extends in a first direction substantially perpendicular to the second direction. Each of the plurality of gate structures includes a tunnel insulation layer pattern, a floating gate, a dielectric layer pattern and a control gate sequentially stacked on the substrate. The isolation layer pattern is formed in the trench. First isolation layer pattern has at least one first air gap between sidewalls of at least one adjacent pair of the floating gates. The insulating interlayer pattern is formed between the gate structures, and the first insulating interlayer pattern extends in the second direction.

摘要翻译： 一种半导体器件，包括其中形成有沟槽的衬底，多个栅极结构，隔离层图案和绝缘层间图案。 衬底包括由沟槽限定的多个有源区，并在第二方向彼此间隔开。 每个有源区域沿着基本上垂直于第二方向的第一方向延伸。 多个栅极结构中的每一个包括依次层叠在基板上的隧道绝缘层图案，浮动栅极，电介质层图案和控制栅极。 隔离层图案形成在沟槽中。 第一隔离层图案在至少一对相邻的浮置栅极的侧壁之间具有至少一个第一气隙。 绝缘层间图案形成在栅极结构之间，第一绝缘层间图案沿第二方向延伸。

公开(公告)号：US20110161008A1

公开(公告)日：2011-06-30

申请号：US13057112

申请日：2009-07-16

申请人： Keun-Ho Lee

发明人： Keun-Ho Lee

IPC分类号： G06F19/00

CPC分类号： E02D1/022

摘要： Provided are a land settlement measuring apparatus and a land settlement measuring system. The land settlement measuring apparatus includes a magnetic field detection unit, a microprocessor, and a containing unit. The magnetic field detection unit includes a plurality of magnetic field detection sensors that are separated from each other in a predetermined interval. The microprocessor calculates a differential settlement amount based on a magnetic field detection signal transmitted from the magnetic field detection unit, in the case where a change in the magnetic field is detected by the sensor. The containing unit contains the magnetic field detection unit and the microprocessor. The land settlement measuring system includes a magnetic field generation unit, a land settlement measuring apparatus, and a data logger. The magnetic field generation unit is disposed at a predetermined position of a ground to be adjacent to a hole which is perforated down to an unmovable layer. The land settlement measuring apparatus passes through the hole so that the one end thereof is fixed to the unmovable layer, the land settlement measuring apparatus measuring a differential settlement amount according to a change in the position of the magnetic field generation unit. The data logger stores a result of the measurement transmitted from the land settlement measuring apparatus. According to the configuration, it is possible to collectively measure a differential settlement amount of a surface of a settling layer and a differential settlement amount of the settling layer in one system and to obtain a more accurate value of the measurement.

摘要翻译： 提供了一个土地结算测量仪器和一个土地沉降测量系统。 陆地沉降测量装置包括磁场检测单元，微处理器和容纳单元。 磁场检测单元包括以预定间隔彼此分离的多个磁场检测传感器。 在由传感器检测到磁场的变化的情况下，微处理器基于从磁场检测单元发送的磁场检测信号来计算差分结算量。 容纳单元包含磁场检测单元和微处理器。 陆地测量系统包括磁场产生单元，陆地测量装置和数据记录器。 磁场产生单元设置在接地孔的预定位置，以与穿过不可移动层的孔相邻。 陆地沉降测量装置通过孔，使其一端固定在不可移动层上，土地沉降测量装置根据磁场产生单元的位置变化来测量差值沉降量。 数据记录器存储从陆地测量装置发送的测量结果。 根据该结构，能够一体地测定一个系统中的沉降层的表面的差分沉降量和沉降层的微分沉降量，并获得更准确的测量值。

公开(公告)号：US07920418B2

公开(公告)日：2011-04-05

申请号：US11972243

申请日：2008-01-10

申请人： Seung-Chul Lee ,  Keun-Ho Lee ,  Choong-Ho Lee ,  Byung-Yong Choi

发明人： Seung-Chul Lee ,  Keun-Ho Lee ,  Choong-Ho Lee ,  Byung-Yong Choi

IPC分类号： G11C11/34

CPC分类号： H01L27/11521 ,  G11C16/0483 ,  G11C16/3418 ,  H01L27/115 ,  H01L27/11524

摘要： A nonvolatile memory device includes a semiconductor substrate of a first conductivity type, a plurality of word lines on the semiconductor substrate, each the plurality of word lines including a floating gate of a second conductivity type. A ground select line and a string select line are disposed on respective sides of word lines. An impurity region of the second conductivity type underlies a first word line adjacent the ground select line. The device may further include a second impurity region of the second conductivity type underlying a second word line adjacent the string select line. In still further embodiments, the device may further include third impurity regions of the second conductivity type underlying respective third word lines between the first word line and the second word line. Methods of forming such devices are also provided.

摘要翻译： 非易失性存储器件包括第一导电类型的半导体衬底，半导体衬底上的多个字线，多条字线包括第二导电类型的浮置栅极。 地线选择线和串选择线设置在字线的相应侧上。 第二导电类型的杂质区域位于与地选线相邻的第一字线的正下方。 该器件还可以包括第二导电类型的第二杂质区域，位于与串选择线相邻的第二字线下方。 在另外的实施例中，器件还可以包括在第一字线和第二字线之间的相应第三字线下方的第二导电类型的第三杂质区。 还提供了形成这种装置的方法。

公开(公告)号：US20070181949A1

公开(公告)日：2007-08-09

申请号：US11649368

申请日：2007-01-04

申请人： Jung-Dal Choi ,  Sang-Hun Jeon ,  Young-Kwan Park ,  Keun-Ho Lee

发明人： Jung-Dal Choi ,  Sang-Hun Jeon ,  Young-Kwan Park ,  Keun-Ho Lee

IPC分类号： H01L29/76

CPC分类号： H01L27/115

摘要： A transistor includes a gate electrode on a substrate, source/drain regions in the substrate at both sides of the gate electrode, and a channel region defined between the source/drain regions, wherein the channel region includes a recessed region and at least one of the source/drain regions is spaced away from the recessed region of the channel region.

摘要翻译： 晶体管包括衬底上的栅电极，位于栅电极两侧的衬底中的源/漏区和限定在源/漏区之间的沟道区，其中沟道区包括凹陷区和至少之一 源极/漏极区域与沟道区域的凹陷区域间隔开。

公开(公告)号：US20050174861A1

公开(公告)日：2005-08-11

申请号：US11028202

申请日：2005-01-04

申请人： Young-Tae Kim ,  Young-Nam Hwang ,  Tai-Kyung Kim ,  Won-Young Chung ,  Keun-Ho Lee

发明人： Young-Tae Kim ,  Young-Nam Hwang ,  Tai-Kyung Kim ,  Won-Young Chung ,  Keun-Ho Lee

IPC分类号： H01L27/115 ,  G11C29/00 ,  H01L27/10 ,  H01L27/24 ,  H01L45/00

CPC分类号： H01L45/06 ,  H01L27/2436 ,  H01L45/1226 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/1293 ,  H01L45/143 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1675

摘要： In a method of forming a phase-change memory device, a variable resistance member may be formed on a s semiconductor substrate having a contact region, and a first electrode may be formed to contact a first portion of the variable resistance member and to be electrically connected to the contact region. A second electrode may be formed so as to contact a second portion of the variable resistance member.

摘要翻译： 在形成相变存储器件的方法中，可变电阻部件可以形成为具有接触区域的半导体衬底，并且第一电极可以形成为接触可变电阻部件的第一部分并被电连接 到接触区域。 第二电极可以形成为接触可变电阻部件的第二部分。