摘要:
An objective of the present invention is to provide highly water-soluble compounds having integrin &agr;v&bgr;3 antagonistic activity. The compounds according to the present invention are compounds represented by formula (I) and pharmaceutically acceptable salts or solvates thereof: wherein A represents a two nitrogen atom-containing optionally substituted saturated or unsaturated five- to seven-membered heterocyclic group, which is optionally condensed with another carbocyclic ring or heterocyclic ring to form a bicyclic group, or —C(—NR1R2)(═NR3) wherein R1, R2, and R3 represent hydrogen, alkyl or the like; D represents a bond, >NR4, wherein R4 represents hydrogen or optionally substituted alkyl, —O—, or —S—; X and Z represent either CH or N; R7 and R8 represent C1-6 alkyl, halogen, oxygen or the like; Q represents >C═O, >CHR13 or >CHOR13 wherein R13 represents hydrogen or alkyl; R9 represents hydrogen, alkyl or the like; J represents a bond or alkylene having 1 to 3 carbon atoms; R10 and R11 represent hydrogen, alkyl or the like; m is an integer of 0 to 5; n is an integer of 0 to 4; and p and q are an integer of 1 to 3.
摘要翻译:本发明的目的是提供具有整合素α2拮抗活性的高水溶性化合物。 根据本发明的化合物是由式(I)表示的化合物及其药学上可接受的盐或溶剂化物:其中A表示两个含有氮原子的任选取代的饱和或不饱和的五至七元杂环基,其任选地稠合 与另一个碳环或杂环形成双环基团,或-C(-NR 1 R 2)(= NR 3)(其中R 1,R 2和R 3) 代表氢,烷基等; D表示键,NR 4,其中R 4表示氢或任选取代的烷基,-O-或-S-; X和Z表示CH或N; R 7和R 8表示C 1-6烷基,卤素,氧等; Q表示C = O,> CHR 13或CHOR 13,其中R 13表示氢或烷基; R 9表示氢,烷基等; J表示碳原子数1〜3的键或亚烷基。 R 10和R 11代表氢,烷基等; m为0〜5的整数。 n为0〜4的整数。 p和q为1〜3的整数。
摘要:
An object of the present invention is to provide m-substituted benzoic acid derivatives having integrin αvβ3 antagonistic activity. The derivatives according to the present invention are compounds represented by formula (I) or pharmaceutically acceptable salts or solvates thereof, which are useful for the treatment or prevention of cardiovascular diseases, angiogenesis-related diseases, cerebrovascular diseases, cancers and metastasis thereof, immunological diseases, osteopathy and other diseases: wherein A represents an optionally substituted heterocyclic group containing two nitrogen atoms, a bicylic group or the like; D represents a bond, >NR4, >CR5R6, O, S, or —NR4—CR5R6—; X represents CH or N; R7 and R8 represent hydroxyl, alkyl or the like; Q represents >C═O or the like; R9 represents hydrogen, alkyl or the like; J represents a bond or alkylene; R10 represents optionally substituted hydroxyl, amino or the like; R11 represents hydrogen, alkyl or the like; m is 0 to 5; n is 0 to 4; and p and q are each 0 to 3.
摘要翻译:本发明的目的是提供具有整合素α噬菌体拮抗活性的m取代苯甲酸衍生物。 根据本发明的衍生物是由式(I)表示的化合物或其药学上可接受的盐或溶剂化物,其可用于治疗或预防心血管疾病,血管生成相关疾病,脑血管疾病,癌症及其转移,免疫疾病 ,骨病和其他疾病:其中A表示任选取代的含有两个氮原子的杂环基团,二等基团等; D表示键,NR 4,CR 5 R 6,O,S或-NR 4 -CR 5 R 6 - 。 X表示CH或N; R 7和R 8代表羟基,烷基等; Q表示> C = O等; R 9表示氢,烷基等; J表示键或亚烷基; R 10表示任选取代的羟基,氨基等; R 11表示氢,烷基等; m为0〜5; n为0〜4; p和q各自为0〜3。
摘要:
An objective of the present invention is to provide compounds having integrin &agr;v&bgr;3 antagonistic activity, GP IIb/IIIa antagonistic activity, and/or human platelet aggregation inhibitory activity, and therapeutic agents for treating integrin &agr;v&bgr;3-mediated diseases and for inhibiting platelet aggregation. The derivatives according to the present invention are compounds represented by formula (I) or pharmaceutically acceptable salts or solvates thereof: wherein A represents a five- to seven-membered heterocyclic ring containing two nitrogen atoms or the like; X and Z represent CH or a nitrogen atom; R4 and R5 represent alkyl, halogen or the like; Q represents >C=O, >CH2 or the like; R6 represents H, alkyl, aralkyl or the like; R7 represents H, alkynyl or the like; R8 represents H, substituted amino or the like; R9 represents H or alkyl; m is 0 to 5; n is 0 to 4; p is 2 or 3; and q is 0 or 1.
摘要:
An objective of the present invention is to provide compounds having integrin &agr;v&bgr;3 antagonistic activity, cell adhesion inhibitory activity, GP IIb/IIIa antagonistic activity, and/or human platelet aggregation inhibitory activity, and, therapeutic agents for treating cardiovascular diseases, angiogenesis-related diseases, cerebrovascular diseases and the like and for inhibiting platelet aggregation. The derivatives according to the present invention are compounds represented by formula (I) or pharmaceutically acceptable salts or solvates thereof: wherein A represents a five- to seven-membered heterocyclic group containing two nitrogen atoms or the like; D represents >NH2, >CH2 or the like; X and Z represent CH or a nitrogen atom; R7 and R8 represent alkyl, halogen or the like; Q represents >C═O, >CH2 or the like; R9 represents H, alkyl, aralkyl or the like; R10 represents H, alkynyl or the like; R11 represents H, substituted amino or the like; R12 represents H or alkyl; m is 0 to 5; n is 0 to 4; p and q are each 1 to 3; and r is 0 or 1.
摘要翻译:本发明的目的是提供具有整合素α噬菌体拮抗活性,细胞粘附抑制活性,GP IIb / IIIa拮抗活性和/或人血小板聚集抑制活性的化合物,以及用于治疗心血管疾病,血管发生相关疾病 脑血管疾病等,并用于抑制血小板聚集。 根据本发明的衍生物是由式(I)表示的化合物或其药学上可接受的盐或溶剂合物:其中A表示含有两个氮原子等的5-至7-元杂环基; D表示> NH 2,> CH 2等; X和Z表示CH或氮原子; R 7和R 8表示烷基,卤素等; Q表示> C = O,> CH2等; R 9表示H,烷基,芳烷基等; R 10表示H,炔基等; R11表示H,取代的氨基等; R 12表示H或烷基; m为0〜5; n为0〜4; p和q各自为1至3; r为0或1。
摘要:
The present invention relates to an etching method of capable of etching a silicon carbide substrate with a higher accuracy. A first etching step in which a silicon carbide substrate K is heated to a temperature equal to or higher than 200 ° C, SF6 gas is supplied into a processing chamber and plasma is generated from the SF6 gas, and a bias potential is applied to a platen, thereby isotropically etching the silicon carbide substrate K, and a second etching step in which the silicon carbide substrate K is heated to a temperature equal to or higher than 200 ° C., SF6 gas and O2 gas are supplied into the processing chamber and plasma is generated from the SF6 gas and the O2 gas, and a bias potential is applied to the platen on which the silicon carbide substrate K is placed, thereby etching the silicon carbide substrate K while forming a silicon oxide film as passivation film on the silicon carbide substrate K are alternately repeated.
摘要:
A plasma generator for generating a plasma exhibiting a uniform etching rate in a circumferential direction of a sample and a plasma etching device enabling a uniform etching in a circumferential direction of a sample are provided. To generate a plasma of a process gas, the process gas is introduced into a plasma generating chamber while a predetermined pressure is kept, and a high-frequency alternating voltage is applied to a coil. By applying an alternating voltage is applied to a substrate electrode, the plasma generated in the plasma generating chamber is brought into a reaction chamber and a sample is etched. The coil is not wound in a uniform helical shape. One turn of the coil has a first winding portion wound horizontally or generally horizontally and a second winding portion wound at a sharply inclined angle.
摘要:
A deposition method capable of forming an oxide film with a predetermined film thickness ratio using a deposition gas with which a small film thickness ratio is obtained and a deposition gas with which a large film thickness ratio is obtained. When forming an oxide film having a larger film thickness on the surface of a substrate than on the bottom surface of the hole so that the film thickness ratio of the oxide film formed on the surface of the substrate to the oxide film formed on the bottom surface of the hole becomes a predetermined ratio, plasma is generated from a gas mixture including tetraethoxysilane and oxygen to form an oxide film and then plasma is generated from a gas mixture including silane and nitrous oxide.
摘要:
Etching and protective-film deposition operations E and D are in alternation repeatedly executed on a silicon substrate carried on a platform within a processing chamber. With gas inside the processing chamber having been exhausted to pump down the chamber interior, in the etching operation E, the substrate is etched by supplying etching gas into the chamber and converting it into plasma and applying a bias potential to the platform, and in the protective-film deposition operation D, a protective film is formed on the silicon substrate by supplying protective-film deposition gas into the processing chamber and converting it into plasma. When a predetermined time prior to the close of operations E and D (time intervals indicated by reference marks Ee and De) is reached, the supply of etching or protective-film deposition gas is halted, and the exhaust flow rate of gas exhausted from the chamber is made greater than that previously.
摘要:
The use of a paper containing synthetic fiber not greater than 0.8 denier, particularly a paper consisting of a polyvinyl alcohol fiber not greater than 0.8 denier and a cellulosic fiber, as a separator in an alkaline dry cell is conductive to improved alkali resistance, greater alkaline electrolyte absorption, and prevention of an internal short-circuit, resulting in a marked improvement in the discharge capacity of the dry battery.
摘要:
A safety device of a spindle drive type winding apparatus wherein the rotational speed of a spindle on which a yarn package is formed is controlled in accordance with a peripheral speed of a yarn package formed on the spindle or tension in yarn to be wound to form a yarn package in such a manner that the rotational speed is gradually decreased during a normal winding operation. The device comprises:a member for detecting the driving rotational speed of the spindle;a minimum value holding member for holding the minimum value of the driving rotational speed of the spindle from the start of the normal winding operation to the time just before the measurement of the rotational speed by means of the detecting member; anda member for comparing the rotational speed detected by the detecting member with the minimum value held in the minimum value holding member and for emitting a stop signal to the winding apparatus when the rotational speed is larger than the minimum value by at least a predetermined allowance.