公开(公告)号：US06451800B1

公开(公告)日：2002-09-17

申请号：US09601176

申请日：2000-07-28

申请人： Keiichi Ajito ,  Shoichi Murakami ,  Minoru Ishikawa ,  Mikio Yamamoto ,  Dai Kubota ,  Shuichi Gomi ,  Mitsugu Hachisu ,  Kiyoaki Katano

发明人： Keiichi Ajito ,  Shoichi Murakami ,  Minoru Ishikawa ,  Mikio Yamamoto ,  Dai Kubota ,  Shuichi Gomi ,  Mitsugu Hachisu ,  Kiyoaki Katano

IPC分类号： A61K31497

CPC分类号： C07D239/42 ,  C07D235/30 ,  C07D239/14

摘要： An objective of the present invention is to provide compounds having integrin &agr;v&bgr;3 antagonistic activity, GP IIb/IIIa antagonistic activity, and/or human platelet aggregation inhibitory activity, and therapeutic agents for treating integrin &agr;v&bgr;3-mediated diseases and for inhibiting platelet aggregation. The derivatives according to the present invention are compounds represented by formula (I) or pharmaceutically acceptable salts or solvates thereof: wherein A represents a five- to seven-membered heterocyclic ring containing two nitrogen atoms or the like; X and Z represent CH or a nitrogen atom; R4 and R5 represent alkyl, halogen or the like; Q represents >C=O, >CH2 or the like; R6 represents H, alkyl, aralkyl or the like; R7 represents H, alkynyl or the like; R8 represents H, substituted amino or the like; R9 represents H or alkyl; m is 0 to 5; n is 0 to 4; p is 2 or 3; and q is 0 or 1.

摘要翻译： 本发明的目的是提供具有整合素α2拮抗活性，GP IIb / IIIa拮抗活性和/或人血小板聚集抑制活性的化合物，以及用于治疗整合素α1β介导的疾病和抑制血小板聚集的治疗剂。 根据本发明的衍生物是由式（I）表示的化合物或其药学上可接受的盐或溶剂化物：其中A表示含有两个氮原子等的5-至7-元杂环; X和Z表示CH或氮原子; R4和R5代表烷基，卤素等; Q表示> C = O，> CH2等; R6表示H，烷基，芳烷基等; R 7表示H，炔基等; R8表示H，取代的氨基等; R9代表H或烷基; m为0〜5; n为0〜4; p为2或3; q为0或1。

公开(公告)号：US06420558B1

公开(公告)日：2002-07-16

申请号：US09673017

申请日：2000-10-10

申请人： Minoru Ishikawa ,  Shoichi Murakami ,  Mikio Yamamoto ,  Dai Kubota ,  Mitsugu Hachisu ,  Kiyoaki Katano ,  Keiichi Ajito

发明人： Minoru Ishikawa ,  Shoichi Murakami ,  Mikio Yamamoto ,  Dai Kubota ,  Mitsugu Hachisu ,  Kiyoaki Katano ,  Keiichi Ajito

IPC分类号： C07D23902

CPC分类号： C07D235/14 ,  C07D401/12

摘要： An objective of the present invention is to provide compounds having integrin &agr;v&bgr;3 antagonistic activity, cell adhesion inhibitory activity, GP IIb/IIIa antagonistic activity, and/or human platelet aggregation inhibitory activity, and, therapeutic agents for treating cardiovascular diseases, angiogenesis-related diseases, cerebrovascular diseases and the like and for inhibiting platelet aggregation. The derivatives according to the present invention are compounds represented by formula (I) or pharmaceutically acceptable salts or solvates thereof: wherein A represents a five- to seven-membered heterocyclic group containing two nitrogen atoms or the like; D represents >NH2, >CH2 or the like; X and Z represent CH or a nitrogen atom; R7 and R8 represent alkyl, halogen or the like; Q represents >C═O, >CH2 or the like; R9 represents H, alkyl, aralkyl or the like; R10 represents H, alkynyl or the like; R11 represents H, substituted amino or the like; R12 represents H or alkyl; m is 0 to 5; n is 0 to 4; p and q are each 1 to 3; and r is 0 or 1.

摘要翻译： 本发明的目的是提供具有整合素α噬菌体拮抗活性，细胞粘附抑制活性，GP IIb / IIIa拮抗活性和/或人血小板聚集抑制活性的化合物，以及用于治疗心血管疾病，血管发生相关疾病 脑血管疾病等，并用于抑制血小板聚集。 根据本发明的衍生物是由式（I）表示的化合物或其药学上可接受的盐或溶剂合物：其中A表示含有两个氮原子等的5-至7-元杂环基; D表示> NH 2，> CH 2等; X和Z表示CH或氮原子; R 7和R 8表示烷基，卤素等; Q表示> C = O，> CH2等; R 9表示H，烷基，芳烷基等; R 10表示H，炔基等; R11表示H，取代的氨基等; R 12表示H或烷基; m为0〜5; n为0〜4; p和q各自为1至3; r为0或1。

公开(公告)号：US06750219B1

公开(公告)日：2004-06-15

申请号：US10048914

申请日：2002-02-05

申请人： Keiichi Ajito ,  Naokazu Yahata ,  Minoru Ishikawa ,  Dai Kubota ,  Shoichi Murakami ,  Mikio Yamamoto ,  Kazuyuki Fujishima ,  Shuichi Gomi ,  Shokichi Ouchi

发明人： Keiichi Ajito ,  Naokazu Yahata ,  Minoru Ishikawa ,  Dai Kubota ,  Shoichi Murakami ,  Mikio Yamamoto ,  Kazuyuki Fujishima ,  Shuichi Gomi ,  Shokichi Ouchi

IPC分类号： C07D40304

CPC分类号： C07D239/42

摘要： An objective of the present invention is to provide highly water-soluble compounds having integrin &agr;v&bgr;3 antagonistic activity. The compounds according to the present invention are compounds represented by formula (I) and pharmaceutically acceptable salts or solvates thereof: wherein A represents a two nitrogen atom-containing optionally substituted saturated or unsaturated five- to seven-membered heterocyclic group, which is optionally condensed with another carbocyclic ring or heterocyclic ring to form a bicyclic group, or —C(—NR1R2)(═NR3) wherein R1, R2, and R3 represent hydrogen, alkyl or the like; D represents a bond, >NR4, wherein R4 represents hydrogen or optionally substituted alkyl, —O—, or —S—; X and Z represent either CH or N; R7 and R8 represent C1-6 alkyl, halogen, oxygen or the like; Q represents >C═O, >CHR13 or >CHOR13 wherein R13 represents hydrogen or alkyl; R9 represents hydrogen, alkyl or the like; J represents a bond or alkylene having 1 to 3 carbon atoms; R10 and R11 represent hydrogen, alkyl or the like; m is an integer of 0 to 5; n is an integer of 0 to 4; and p and q are an integer of 1 to 3.

摘要翻译： 本发明的目的是提供具有整合素α2拮抗活性的高水溶性化合物。 根据本发明的化合物是由式（I）表示的化合物及其药学上可接受的盐或溶剂化物：其中A表示两个含有氮原子的任选取代的饱和或不饱和的五至七元杂环基，其任选地稠合 与另一个碳环或杂环形成双环基团，或-C（-NR 1 R 2）（= NR 3）（其中R 1，R 2和R 3） 代表氢，烷基等; D表示键，NR 4，其中R 4表示氢或任选取代的烷基，-O-或-S-; X和Z表示CH或N; R 7和R 8表示C 1-6烷基，卤素，氧等; Q表示C = O，> CHR 13或CHOR 13，其中R 13表示氢或烷基; R 9表示氢，烷基等; J表示碳原子数1〜3的键或亚烷基。 R 10和R 11代表氢，烷基等; m为0〜5的整数。 n为0〜4的整数。 p和q为1〜3的整数。

公开(公告)号：US20050059669A1

公开(公告)日：2005-03-17

申请号：US10944712

申请日：2004-09-21

申请人： Keiichi Ajito ,  Minoru Ishikawa ,  Dai Kubota ,  Shoichi Murakami ,  Mikio Yamamoto ,  Naokazu Yahata ,  Kazuyuki Fujishima ,  Makoto Oyama

发明人： Keiichi Ajito ,  Minoru Ishikawa ,  Dai Kubota ,  Shoichi Murakami ,  Mikio Yamamoto ,  Naokazu Yahata ,  Kazuyuki Fujishima ,  Makoto Oyama

IPC分类号： C07C229/54 ,  C07C229/60 ,  C07D239/14 ,  C07D239/42 ,  C07D401/12 ,  A61K31/496 ,  A61K31/454 ,  C07D43/02

CPC分类号： C04B35/632 ,  C07C229/54 ,  C07C229/60 ,  C07D239/14 ,  C07D239/42 ,  C07D401/12

摘要： An object of the present invention is to provide m-substituted benzoic acid derivatives having integrin αvβ3 antagonistic activity. The derivatives according to the present invention are compounds represented by formula (I) or pharmaceutically acceptable salts or solvates thereof, which are useful for the treatment or prevention of cardiovascular diseases, angiogenesis-related diseases, cerebrovascular diseases, cancers and metastasis thereof, immunological diseases, osteopathy and other diseases: wherein A represents an optionally substituted heterocyclic group containing two nitrogen atoms, a bicylic group or the like; D represents a bond, >NR4, >CR5R6, O, S, or —NR4—CR5R6—; X represents CH or N; R7 and R8 represent hydroxyl, alkyl or the like; Q represents >C═O or the like; R9 represents hydrogen, alkyl or the like; J represents a bond or alkylene; R10 represents optionally substituted hydroxyl, amino or the like; R11 represents hydrogen, alkyl or the like; m is 0 to 5; n is 0 to 4; and p and q are each 0 to 3.

摘要翻译： 本发明的目的是提供具有整合素α噬菌体拮抗活性的m取代苯甲酸衍生物。 根据本发明的衍生物是由式（I）表示的化合物或其药学上可接受的盐或溶剂化物，其可用于治疗或预防心血管疾病，血管生成相关疾病，脑血管疾病，癌症及其转移，免疫疾病 ，骨病和其他疾病：其中A表示任选取代的含有两个氮原子的杂环基团，二等基团等; D表示键，NR 4，CR 5 R 6，O，S或-NR 4 -CR 5 R 6 - 。 X表示CH或N; R 7和R 8代表羟基，烷基等; Q表示> C = O等; R 9表示氢，烷基等; J表示键或亚烷基; R 10表示任选取代的羟基，氨基等; R 11表示氢，烷基等; m为0〜5; n为0〜4; p和q各自为0〜3。

公开(公告)号：US08859434B2

公开(公告)日：2014-10-14

申请号：US13809624

申请日：2011-07-11

申请人： Akimitsu Oishi ,  Shoichi Murakami

发明人： Akimitsu Oishi ,  Shoichi Murakami

IPC分类号： H01L21/302 ,  H01L21/3065 ,  H01L29/16

CPC分类号： H01L21/30655 ,  H01L29/1608

摘要： The present invention relates to an etching method of capable of etching a silicon carbide substrate with a higher accuracy. A first etching step in which a silicon carbide substrate K is heated to a temperature equal to or higher than 200 ° C, SF6 gas is supplied into a processing chamber and plasma is generated from the SF6 gas, and a bias potential is applied to a platen, thereby isotropically etching the silicon carbide substrate K, and a second etching step in which the silicon carbide substrate K is heated to a temperature equal to or higher than 200 ° C., SF6 gas and O2 gas are supplied into the processing chamber and plasma is generated from the SF6 gas and the O2 gas, and a bias potential is applied to the platen on which the silicon carbide substrate K is placed, thereby etching the silicon carbide substrate K while forming a silicon oxide film as passivation film on the silicon carbide substrate K are alternately repeated.

摘要翻译： 本发明涉及能够以更高的精度蚀刻碳化硅衬底的蚀刻方法。 将碳化硅衬底K加热到等于或高于200℃的温度的第一蚀刻步骤，将SF6气体供应到处理室中，并且从SF 6气体产生等离子体，并且将偏置电位施加到 压板，从而各向同性地蚀刻碳化硅衬底K;以及第二蚀刻步骤，其中将碳化硅衬底K加热到等于或高于200℃的温度，将SF 6气体和O 2气体供应到处理室中， 从SF6气体和O2气体产生等离子体，并且将偏置电位施加到其上放置碳化硅衬底K的压板上，从而蚀刻碳化硅衬底K，同时在硅上形成氧化硅膜作为钝化膜 交替地重复碳化物衬底K.

公开(公告)号：US20070086143A1

公开(公告)日：2007-04-19

申请号：US10596161

申请日：2004-11-29

申请人： Yasuyuki Hayashi ,  Shoichi Murakami ,  Takeshi Habe ,  Naoya Ikemoto

发明人： Yasuyuki Hayashi ,  Shoichi Murakami ,  Takeshi Habe ,  Naoya Ikemoto

IPC分类号： H01T23/00

CPC分类号： H01J37/3211 ,  H01J37/321

摘要： A plasma generator for generating a plasma exhibiting a uniform etching rate in a circumferential direction of a sample and a plasma etching device enabling a uniform etching in a circumferential direction of a sample are provided. To generate a plasma of a process gas, the process gas is introduced into a plasma generating chamber while a predetermined pressure is kept, and a high-frequency alternating voltage is applied to a coil. By applying an alternating voltage is applied to a substrate electrode, the plasma generated in the plasma generating chamber is brought into a reaction chamber and a sample is etched. The coil is not wound in a uniform helical shape. One turn of the coil has a first winding portion wound horizontally or generally horizontally and a second winding portion wound at a sharply inclined angle.

摘要翻译： 提供一种等离子体发生器，用于产生在样品的圆周方向上具有均匀蚀刻速率的等离子体和能够在样品的圆周方向上均匀蚀刻的等离子体蚀刻装置。 为了产生处理气体的等离子体，在保持预定压力的同时将处理气体引入等离子体发生室，并且向线圈施加高频交流电压。 通过施加向基板电极施加交流电压，将等离子体发生室中产生的等离子体进入反应室，并对样品进行蚀刻。 线圈未卷绕成均匀的螺旋形状。 线圈的一圈具有水平地或大致水平地缠绕的第一绕组部分和以锐角倾斜地缠绕的第二绕组部分。

公开(公告)号：US20140220711A1

公开(公告)日：2014-08-07

申请号：US14238289

申请日：2012-05-22

申请人： Shoichi Murakami ,  Masayasu Hatashita

发明人： Shoichi Murakami ,  Masayasu Hatashita

IPC分类号： H01L21/02 ,  H01L21/66

CPC分类号： H01L21/0217 ,  C23C16/345 ,  C23C16/509 ,  H01L21/0214 ,  H01L21/02274 ,  H01L22/12

摘要： A nitride film manufacturing apparatus forms a nitride film on a substrate provided in a chamber by a plasma CVD technique. Specifically, the nitride film manufacturing apparatus includes a controller for calculating a first period for applying first high-frequency power having a relatively high frequency and a second period for applying second high-frequency power having a relatively low frequency in order to obtain desired compressive stress or tensile stress of the nitride film, based on distribution of a refractive index of the nitride film and/or distribution of a deposition rate of the nitride film, the distribution falling within a predetermined numerical range and being obtained using the first high-frequency power and/or the second high-frequency power applied independently for forming the nitride film.

摘要翻译： 氮化膜制造装置通过等离子体CVD技术在设置在室中的基板上形成氮化膜。 具体而言，氮化膜制造装置包括：控制器，用于计算用于施加具有较高频率的第一高频电力的第一周期和用于施加具有相对较低频率的第二高频功率的第二周期，以获得期望的压缩应力 或氮化物膜的拉伸应力，基于氮化物膜的折射率的分布和/或氮化物膜的沉积速率的分布，该分布落在预定数值范围内并且使用第一高频功率获得 和/或独立地施加的用于形成氮化物膜的第二高频电力。

公开(公告)号：US20130115772A1

公开(公告)日：2013-05-09

申请号：US13809624

申请日：2011-07-11

申请人： Akimitsu Oishi ,  Shoichi Murakami

发明人： Akimitsu Oishi ,  Shoichi Murakami

IPC分类号： H01L21/3065

CPC分类号： H01L21/30655 ,  H01L29/1608

摘要： The present invention relates to an etching method of capable of etching a silicon carbide substrate with a higher accuracy. A first etching step in which a silicon carbide substrate K is heated to a temperature equal to or higher than 200° C., SF6 gas is supplied into a processing chamber and plasma is generated from the SF6 gas, and a bias potential is applied to a platen, thereby isotropically etching the silicon carbide substrate K, and a second etching step in which the silicon carbide substrate K is heated to a temperature equal to or higher than 200° C., SF6 gas and O2 gas are supplied into the processing chamber and plasma is generated from the SF6 gas and the O2 gas, and a bias potential is applied to the platen on which the silicon carbide substrate K is placed, thereby etching the silicon carbide substrate K while forming a silicon oxide film as passivation film on the silicon carbide substrate K are alternately repeated.

摘要翻译： 本发明涉及能够以更高的精度蚀刻碳化硅衬底的蚀刻方法。 将碳化硅衬底K加热至等于或高于200℃的第一蚀刻步骤，将SF 6气体供应到处理室中，并从SF 6气体产生等离子体，并将偏置电位施加到 压板，从而各向同性蚀刻碳化硅衬底K;以及第二蚀刻步骤，其中将碳化硅衬底K加热到等于或高于200℃的温度，将SF 6气体和O 2气体供应到处理室 并且从SF 6气体和O 2气体产生等离子体，并且将偏置电位施加到其上放置碳化硅衬底K的压板上，从而蚀刻碳化硅衬底K，同时在其上形成氧化硅膜作为钝化膜 交替地重复碳化硅衬底K.

公开(公告)号：US08148504B2

公开(公告)日：2012-04-03

申请号：US12227861

申请日：2007-06-01

申请人： Yoshihiko Kobayashi ,  Yoshihisa Akiyama ,  Takeshi Murakami ,  Nobuto Minowa ,  Masaki Tsushima ,  Yukiko Hiraiwa ,  Shoichi Murakami ,  Mitsuhiro Abe ,  Kazushige Sasaki ,  Shigeru Hoshiko ,  Toshiaki Miyake ,  Yoshiaki Takahashi ,  Daishiro Ikeda

发明人： Yoshihiko Kobayashi ,  Yoshihisa Akiyama ,  Takeshi Murakami ,  Nobuto Minowa ,  Masaki Tsushima ,  Yukiko Hiraiwa ,  Shoichi Murakami ,  Mitsuhiro Abe ,  Kazushige Sasaki ,  Shigeru Hoshiko ,  Toshiaki Miyake ,  Yoshiaki Takahashi ,  Daishiro Ikeda

IPC分类号： C07H13/02

CPC分类号： C07H15/234 ,  C07H15/224

摘要： This invention relates to novel aminoglycoside antibiotics, which have potent antimicrobial activity against bacteria, which induce infectious diseases, particularly MRSA, and has no significant nephrotoxicity, and process for producing them. More particularly, the present invention relates to compounds represented by formula (Ia) or their pharmacologically acceptable salts or solvates, or their diastereomer mixtures, antimicrobial agents comprising them, and a process for producing them.

摘要翻译： 本发明涉及对细菌具有强力抗微生物活性的新型氨基糖苷类抗生素，其诱导感染性疾病，特别是MRSA，并且没有显着的肾毒性，以及生产它们的方法。 更具体地，本发明涉及由式（Ia）表示的化合物或其药理学上可接受的盐或溶剂合物或其非对映体混合物，包含它们的抗微生物剂及其制备方法。

公开(公告)号：US07754613B2

公开(公告)日：2010-07-13

申请号：US11459646

申请日：2006-07-25

申请人： Shoichi Murakami ,  Takashi Yamamoto ,  Tatsuo Hiramura

发明人： Shoichi Murakami ,  Takashi Yamamoto ,  Tatsuo Hiramura

IPC分类号： H01L21/311 ,  H01L21/461 ,  H01L21/302

CPC分类号： H01L21/67069 ,  H01J37/32082 ,  H01J37/32449 ,  H01J37/32706 ,  H01J2237/334 ,  H01L21/30655

摘要： Etching and protective-film deposition operations E and D are in alternation repeatedly executed on a silicon substrate carried on a platform within a processing chamber. With gas inside the processing chamber having been exhausted to pump down the chamber interior, in the etching operation E, the substrate is etched by supplying etching gas into the chamber and converting it into plasma and applying a bias potential to the platform, and in the protective-film deposition operation D, a protective film is formed on the silicon substrate by supplying protective-film deposition gas into the processing chamber and converting it into plasma. When a predetermined time prior to the close of operations E and D (time intervals indicated by reference marks Ee and De) is reached, the supply of etching or protective-film deposition gas is halted, and the exhaust flow rate of gas exhausted from the chamber is made greater than that previously.

摘要翻译： 蚀刻和保护膜沉积操作E和D在处理室内的平台上承载的硅衬底上重复执行。 由于处理室内的气体已被排出以抽空腔室内部，所以在蚀刻操作E中，通过向腔室中提供蚀刻气体并将其转换成等离子体并向平台施加偏置电位来蚀刻衬底，并且在 保护膜沉积操作D，通过向处理室中提供保护膜沉积气体并将其转换成等离子体，在硅衬底上形成保护膜。 当达到操作结束E和D（由参考标记Ee和De指示的时间间隔）之前的预定时间时，停止供应蚀刻或保护膜沉积气体，并且从 室比以前更大。