公开(公告)号：US5569627A

公开(公告)日：1996-10-29

申请号：US506868

申请日：1995-07-25

申请人： Keiji Shinohara ,  Junichi Sato ,  Yukihiro Kamide ,  Toshiharu Yanagida

发明人： Keiji Shinohara ,  Junichi Sato ,  Yukihiro Kamide ,  Toshiharu Yanagida

IPC分类号： C23F4/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3213 ,  H01L21/768 ,  H01L21/306

CPC分类号： C23F4/00 ,  H01L21/3213 ,  H01L21/32135 ,  H01L21/768 ,  H01L21/76838 ,  H01L21/76885

摘要： A method for forming a copper wiring in a semiconductor device utilizes a copper film with a pattern mask thereon. Exposed portions of the copper film are etched to form a copper wiring. An insulation film is deposited over the copper wiring, including on side walls thereof. A portion of the insulation film is removed to leave an insulation film substantially only on side walls of the copper which is thinner than before the removing. A first dielectric film is formed between the copper wiring up to a top of the pattern mask but not on top of the pattern mask in order to embed and flatten regions between the copper wiring and pattern mask so that the regions are substantially level with the top of the pattern mask. A second dielectric layer is formed on the first dielectric layer to provide a flat surface over the copper wiring and pattern mask.

摘要翻译： 在半导体器件中形成铜布线的方法利用其上具有图案掩模的铜膜。 蚀刻铜膜的露出部分以形成铜布线。 绝缘膜沉积在铜布线上，包括在其侧壁上。 绝缘膜的一部分被除去，仅在铜的侧壁上基本上留下绝缘膜，该侧壁比去除之前薄。 第一电介质膜形成在铜线之间，直到图案掩模的顶部，但不在图案掩模的顶部，以便在铜布线和图案掩模之间嵌入和平坦化区域，使得区域与顶部基本平齐 的图案面具。 在第一电介质层上形成第二电介质层，以在铜布线和图案掩模上提供平坦的表面。

公开(公告)号：US5591302A

公开(公告)日：1997-01-07

申请号：US506872

申请日：1995-07-25

申请人： Keiji Shinohara ,  Junichi Sato ,  Yukihiro Kamide ,  Toshiharu Yanagida

发明人： Keiji Shinohara ,  Junichi Sato ,  Yukihiro Kamide ,  Toshiharu Yanagida

IPC分类号： C23F4/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3213 ,  H01L21/768 ,  H01L21/306

CPC分类号： C23F4/00 ,  H01L21/3213 ,  H01L21/32135 ,  H01L21/768 ,  H01L21/76838 ,  H01L21/76885

摘要： A process for dry etching a copper containing film formed on a substrate is performed by using an etching gas while heating at a temperature below 200.degree. C. The etching gas is selectable from the group consisting of a mixed gas of a N containing gas, an O containing gas, a N and O containing gas, or a mixed gas of a N containing gas, an O containing gas and a F containing gas, or a mixed gas of a N and O containing gas and a F containing gas. By this etching gas, Cu(NO.sub.3).sub.2 is formed to be sublimed.

摘要翻译： 通过在低于200℃的温度下加热的同时使用蚀刻气体进行用于干蚀刻形成在基板上的含铜膜的工艺。蚀刻气体可选自包含含N气体的混合气体， 含有N和O的气体，或含有N的气体，含O气体和含F气体的混合气体，或含有N和O的气体和含F气体的混合气体。 通过该蚀刻气体，形成Cu（NO 3）2升华。

公开(公告)号：US5505322A

公开(公告)日：1996-04-09

申请号：US389722

申请日：1995-02-15

申请人： Keiji Shinohara ,  Junichi Sato ,  Yukihiro Kamide ,  Toshiharu Yanagida

发明人： Keiji Shinohara ,  Junichi Sato ,  Yukihiro Kamide ,  Toshiharu Yanagida

IPC分类号： C23F4/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3213 ,  H01L21/768 ,  H01L21/00

CPC分类号： C23F4/00 ,  H01L21/3213 ,  H01L21/32135 ,  H01L21/768 ,  H01L21/76838 ,  H01L21/76885

摘要： A process for dry etching a copper containing film formed on a substrate is performed by using an etching gas while heating at a temperature below 200.degree. C. The etching gas is selectable from the group consisting of a mixed gas of a N containing gas, an O containing gas, a N and O containing gas, or a mixed gas of a N containing gas, an O containing gas and a F containing gas, or a mixed gas of a N and O containing gas and a F containing gas. By this etching gas, Cu(NO.sub.3).sub.2 is formed to be sublimed.

摘要翻译： 通过在低于200℃的温度下加热的同时使用蚀刻气体进行用于干蚀刻形成在基板上的含铜膜的工艺。蚀刻气体可选自包含含N气体的混合气体， 含有N和O的气体，或含有N的气体，含O气体和含F气体的混合气体，或含有N和O的气体和含F气体的混合气体。 通过该蚀刻气体，形成Cu（NO 3）2升华。

公开(公告)号：US5288952A

公开(公告)日：1994-02-22

申请号：US815060

申请日：1991-12-30

申请人： Junichi Sato ,  Keiji Shinohara

发明人： Junichi Sato ,  Keiji Shinohara

IPC分类号： H01L21/28 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/522 ,  H05K3/40 ,  H05K1/00

CPC分类号： H01L21/76877 ,  H01L23/5226 ,  H01L2924/0002 ,  H05K3/4038

摘要： A multilayer connector is provided, in which at least a first wiring layer is formed, a second wiring layer is formed on the first wiring layer through an interlevel insulator, a contact hole is bored through the interlevel insulator at its portion in which the first and second wiring layers are connected, a coupling conductor is formed within the contact hole and the first and second wiring layers are electrically connected to each other by means of the coupling conductor. A recess portion having an opening is formed on the first wiring layer, the opening of the recess portion being increased in width from a peripheral edge of the contact hole, wherein the coupling conductor formed within the recess portion by a selective chemical vapor deposition process is formed within the contact hole of the interlevel insulator.

摘要翻译： 提供了一种多层连接器，其中至少形成第一布线层，通过层间绝缘体在第一布线层上形成第二布线层，在第二布线层的第一和第 连接第二布线层，在接触孔内形成耦合导体，并且第一和第二布线层通过耦合导体彼此电连接。 具有开口部的凹部形成在第一布线层上，凹部的开口部从接触孔的周缘部的宽度方向扩大，通过选择性化学气相沉积工序形成在凹部内的连结导体为 形成在层间绝缘体的接触孔内。

公开(公告)号：US5200032A

公开(公告)日：1993-04-06

申请号：US813342

申请日：1991-12-24

申请人： Keiji Shinohara

发明人： Keiji Shinohara

IPC分类号： H01L21/302 ,  H01L21/3065 ,  H01L21/3213

CPC分类号： H01L21/32136

摘要： A dry etching method enabling etching of a layer of a copper (Cu) based material at a wafer heating temperature lower than heretofore, and a practically useful method for detecting the end point of etching. If the Cu layer is etched using an etching gas including a compound containing chlorine (Cl) and oxygen (O) as component elements or an etching gas including a compound containing Cl and a compound containing O as component elements, respectively, the Cu layer is removed not only in the form of copper chloride CuCl.sub.x but in the form of copper oxychloride CuCl.sub.x O.sub.y, where x is 1 to 2 and y is 1 to 8. Since CuCl.sub.x O.sub.y has a vapor pressure lower than that of CuCl.sub.x, a conventional etching reaction product, it is unnecessary to heat the wafer to higher temperatures as in the conventional practice, while there is no risk of a copper oxide film being formed on the surface of the Cu layer. The end point of etching may be detected by detecting a decrease in emission peak intensities in the molecular spectrum of CuCl appearing the specific wavelengths, such as 402 nm or 433 nm.

摘要翻译： 可以在比以前更低的晶片加热温度下蚀刻铜（Cu）基材料层的干蚀刻方法，以及用于检测蚀刻终点的实际有用的方法。 如果使用包含含有氯（Cl）和氧（O）的化合物作为组分元素的蚀刻气体或包含含有Cl的化合物的蚀刻气体和包含O作为组分元素的化合物蚀刻Cu层，则Cu层为 不仅以氯化铜CuClx的形式，而且以氯氧化铜CuClxOy的形式除去，其中x为1〜2，y为1〜8。由于CuClxOy的蒸气压低于CuClx，所以常规的蚀刻反应产物， 没有必要像以往那样将晶片加热到更高的温度，而不会在Cu层的表面上形成氧化铜膜的风险。 可以通过检测出现特定波长（例如402nm或433nm）的CuCl的分子光谱中的发射峰强度的降低来检测蚀刻的终点。

公开(公告)号：US5914277A

公开(公告)日：1999-06-22

申请号：US862360

申请日：1997-05-23

申请人： Keiji Shinohara

发明人： Keiji Shinohara

IPC分类号： H01L21/28 ,  C23F4/00 ,  H01L21/027 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/00

CPC分类号： H01L21/31138 ,  C23F4/00 ,  H01L21/32136

摘要： The present invention provides a method for forming a metallic wiring pattern, in which narrowing of a resist during patterning of a metallic film is prevented, adhesion of sputtered metallic film to the side walls of the resist is also prevented, and thereby a highly accurate metallic wiring pattern can be achieved. In the method for forming a metallic wiring pattern according to the present invention, a first dry-etching step is performed using a resist 20 patterned in accordance with a wiring pattern as a mask under conditions achieving a ratio sufficiently close to 1 between the etching selectivity for an organic antireflection film 18 and that for a tungsten film 16 such that the etching reaction proceeds in a manner of transcribing the smooth surface of the organic antireflection film 18 while smoothing uneven portions on the surface of the tungsten film 16; and a second dry-etching is performed under conditions achieving a sufficiently high ratio of the etching selectivity for the tungsten film 16 to that for the resist 20 such that the remaining tungsten film 16 is highly accurately etched into a predetermined tungsten wiring pattern 16a while faithfully transcribing the pattern of the resist 20.

摘要翻译： 本发明提供一种形成金属布线图案的方法，其中防止金属膜图案化期间抗蚀剂变窄，也防止了溅射金属膜对抗蚀剂侧壁的粘附，由此高度精确的金属 可以实现布线图案。 在根据本发明的形成金属布线图形的方法中，使用根据布线图案图案化的抗蚀剂20作为掩模，在达到在蚀刻选择性之前足够接近1的比例的条件下进行第一干蚀刻步骤 对于有机抗反射膜18和钨膜16，使得蚀刻反应以转印有机抗反射膜18的光滑表面的方式进行，同时平滑钨膜16的表面上的不均匀部分; 并且在满足钨膜16的蚀刻选择性与抗蚀剂20的蚀刻选择性的足够高的条件下进行第二次干蚀刻，使得剩余的钨膜16被高精度地蚀刻到预定的钨布线图案16a中，同时忠实地 转录出抗蚀剂20的图案。

公开(公告)号：US5312515A

公开(公告)日：1994-05-17

申请号：US990093

申请日：1992-12-14

申请人： Keiji Shinohara

发明人： Keiji Shinohara

IPC分类号： H01L21/302 ,  H01L21/3065 ,  H01L21/3213 ,  H01L21/00

CPC分类号： H01L21/32136

摘要： A dry etching method enabling etching of a layer of a copper (Cu) based material at a wafer heating temperature lower than heretofore, and a practically useful method for detecting the end point of etching. If the Cu layer is etched using an etching gas including a compound containing chlorine (Cl) and oxygen (O) as component elements or an etching gas including a compound containing Cl and a compound containing O as component elements, respectively, the Cu layer is removed not only in the form of copper chloride CuCl.sub.x but in the form of copper oxychloride CuCl.sub.x O.sub.y, where x is 1 to 2 and y is 1 to 8. Since CuCl.sub.x O.sub.y has a vapor pressure lower than that of CuCl.sub.x, a conventional etching reaction product, it is unnecessary to heat the wafer to higher temperatures as in the conventional practice, while there is no risk of a copper oxide film being formed on the surface of the Cu layer. The end point of etching may be detected by detecting a decrease in emission peak intensities in the molecular spectrum of CuCl appearing the specific wavelengths, such as 402 nm or 433 nm.

摘要翻译： 可以在比以前更低的晶片加热温度下蚀刻铜（Cu）基材料层的干蚀刻方法，以及用于检测蚀刻终点的实际有用的方法。 如果使用包含含有氯（Cl）和氧（O）的化合物作为组分元素的蚀刻气体或包含含有Cl的化合物的蚀刻气体和包含O作为组分元素的化合物蚀刻Cu层，则Cu层为 不仅以氯化铜CuClx的形式，而且以氯氧化铜CuClxOy的形式除去，其中x为1〜2，y为1〜8。由于CuClxOy的蒸气压低于CuClx，所以常规的蚀刻反应产物， 没有必要像以往那样将晶片加热到更高的温度，而不会在Cu层的表面上形成氧化铜膜的风险。 可以通过检测出现特定波长（例如402nm或433nm）的CuCl的分子光谱中的发射峰强度的降低来检测蚀刻的终点。

公开(公告)号：US5194118A

公开(公告)日：1993-03-16

申请号：US816383

申请日：1991-12-27

申请人： Keiji Shinohara

发明人： Keiji Shinohara

IPC分类号： C23F4/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213

CPC分类号： H01L21/3065 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/32137 ,  Y10S148/106

摘要： A method for dry etching enabling good anisotropic processing even at a wafer cooling temperature closer to room temperature than with conventional low temperature etching. Etching is carried out using an etching gas including a compound containing oxygen (O) as a component element and a compound containing hydrogen (H) as a component element, or using a H.sub.2 O containing gas, while the wafer is cooled to a temperature not higher than 0.degree. C. H.sub.2 O produced or present in an etching system is condensed in a quantity monistically determined by the relation between the amount of the moisture and the dew point and is deposited as ice on a wafer surface. This ice contributes to anisotropic processing by being deposited on a pattern sidewall on which ions are not bombarded in the perpendicular direction. In this manner, etching at a temperature at which ice can be deposited is enabled without regard to the combinations between the layer of a material to be etched and the etching gas. Selectivity may also be improved because the amount of the ion incident energy may be reduced in expectation of the sidewall protection effects of ice. There is no risk of particle contamination because ice may be removed by wafer heating and evacuation to vacuum.

摘要翻译： 即使在比常规低温蚀刻更接近室温的晶片冷却温度下，也能进行各向异性处理的干蚀刻方法。 使用包含含有氧（O）作为组分元素的化合物和含有氢（H）作为组分元素的化合物或使用含H 2 O气体的化合物的蚀刻气体进行蚀刻，同时将晶片冷却至不高于 在蚀刻系统中产生或存在的H 2 O以通过水分和露点的关系一度确定的量进行冷凝，并以冰淀积在晶片表面上。 这种冰通过沉积在不在垂直方向上被轰击的图案侧壁上而有助于各向异性处理。 以这种方式，在可以沉积冰的温度下进行蚀刻，而不考虑被蚀刻材料层与蚀刻气体之间的组合。 也可以改善选择性，因为期望冰的侧壁保护作用可能降低离子入射能量。 没有颗粒污染的风险，因为可以通过晶片加热和抽真空去除冰。

公开(公告)号：US5502334A

公开(公告)日：1996-03-26

申请号：US149946

申请日：1993-11-10

申请人： Keiji Shinohara

发明人： Keiji Shinohara

IPC分类号： H01L23/52 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/485 ,  H01L23/532 ,  H01L23/48

CPC分类号： H01L23/485 ,  H01L23/53223 ,  H01L2924/0002

摘要： A metal wiring is composed of an electroconductive adhesive layer formed on the inner wall of a contact hole provided in a dielectric film and on the surface of the above mentioned dielectric film, a first metal wiring arranged on the adhesive layer and filling the contact hole, and a second metal wiring which is made of a metal which is different from that of the first metal wiring and is formed on the above mentioned first metal wiring. The first metallic film formed on the above mentioned first metal wiring is formed by, for example, the blanket tungsten-CVD method.

摘要翻译： 金属布线由形成在介电膜上的接触孔的内壁上的导电性粘合剂层和上述电介质膜的表面构成，布置在粘合剂层上并填充接触孔的第一金属布线， 以及由与第一金属布线的金属不同的金属制成并形成在上述第一金属布线上的第二金属布线。 形成在上述第一金属布线上的第一金属膜通过例如覆盖钨 - CVD法形成。

公开(公告)号：US06355553B1

公开(公告)日：2002-03-12

申请号：US08091957

申请日：1993-07-14

申请人： Keiji Shinohara

发明人： Keiji Shinohara

IPC分类号： H01L214763

CPC分类号： H01L21/7684 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/32051 ,  H01L21/32115 ,  H01L21/32136 ,  H01L21/76877

摘要： A method of forming a metal plug, which method has the steps of depositing a metal film on an insulating film after formation of a contact opening in the insulating film and etching the metal film to bury the metal film in the contact opening, includes the steps of forming on the metal film either a smooth tungsten film formed by bias-sputtering, a smooth silicon nitride film formed by competitive reactions as etching and deposition reactions, a smooth resist film or a smoothing layer constituted by an SOG or organic polymer layer on the metal film and etching back the smooth layer or smoothing layer and the metal film under conditions in which etching rates are almost equal to each other so as to smoothly bury the metal film in the contact opening.

摘要翻译： 一种形成金属插塞的方法，该方法具有以下步骤：在绝缘膜中形成接触开口之后，在绝缘膜上沉积金属膜并蚀刻金属膜以将金属膜埋入接触开口中，包括步骤 在金属膜上形成通过偏压溅射形成的平滑钨膜，通过作为蚀刻和沉积反应的竞争性反应形成的平滑氮化硅膜，在SOF或有机聚合物层上形成的光滑抗蚀剂膜或平滑层 金属膜，并且在蚀刻速率几乎相等的条件下蚀刻光滑层或平滑层和金属膜，以便将金属膜平滑地埋入接触开口中。