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    Method and apparatus for plasma processing apparatus
    2.
    发明授权
    Method and apparatus for plasma processing apparatus 失效
    等离子体处理装置的方法和装置

    公开(公告)号：US06034346A

    公开(公告)日：2000-03-07

    申请号：US649190

    申请日：1996-05-17

    申请人： Ken Yoshioka ,  Saburou Kanai ,  Tetsunori Kaji ,  Ryoji Nishio ,  Manabu Edamura

    发明人： Ken Yoshioka ,  Saburou Kanai ,  Tetsunori Kaji ,  Ryoji Nishio ,  Manabu Edamura

    IPC分类号： H01J37/32 ,  B23K10/00

    CPC分类号： H01J37/32229 ,  H01J37/32192 ,  H01J37/32678

    摘要： An electromagnetically coupled plasma processing apparatus is arranged so that a microwave sent through a coaxial waveguide is enlarged by a parallel disk waveguide before being radiated from an enlarged coaxial portion. The electromagnetically coupled plasma processing apparatus has a loop antenna for passing a high-frequency wave, a cavity resonator for surrounding the loop antenna, and a slit in double-layer structure in a position where the cavity resonator faces a plasma. The plasma on the surface of a wafer can be processed uniformly with various desirable effects including: (1) preventing foreign matter from being produced and abnormal discharge because of electrostatic coupling; (2) improving the ignitability and stability of a plasma; (3) lowering the antenna voltage; and (4) effecting uniform processing by providing an opposed grounding electrode.

    摘要翻译： 电磁耦合等离子体处理装置被布置成使得通过同轴波导发送的微波在从放大的同轴部分辐射之前由平行盘形波导扩大。 电磁耦合等离子体处理装置具有用于使高频波通过的环形天线，用于包围环形天线的空腔谐振器和空腔谐振器面对等离子体的位置的双层结构的狭缝。 晶片表面上的等离子体能够均匀地加工，具有各种理想效果，包括：（1）防止由于静电耦合而产生异物和异常放电; （2）提高等离子体的点火性和稳定性; （3）降低天线电压; 和（4）通过提供相对的接地电极来实现均匀的处理。

    Wafer stage for wafer processing apparatus and wafer processing method
    3.
    发明授权
    Wafer stage for wafer processing apparatus and wafer processing method 失效
    晶圆处理装置的晶片台和晶圆加工方法

    公开(公告)号：US06646233B2

    公开(公告)日：2003-11-11

    申请号：US10087747

    申请日：2002-03-05

    申请人： Seiichiro Kanno ,  Ken Yoshioka ,  Ryoji Nishio ,  Saburou Kanai ,  Hideki Kihara ,  Koji Okuda

    发明人： Seiichiro Kanno ,  Ken Yoshioka ,  Ryoji Nishio ,  Saburou Kanai ,  Hideki Kihara ,  Koji Okuda

    IPC分类号： F27B514

    CPC分类号： H01L21/67109 ,  H01L21/6831

    摘要： A wafer stage for use in wafer processing apparatus which comprises a liquid cooling jacket with a built-in coolant liquid circulation path and a ceramic plate that is attached onto the liquid cooling jacket and has therein a heater and an electrode for electrostatic chuck use, the wafer stage performing wafer processing while letting a wafer be mounted on the ceramic plate, wherein the liquid cooling jacket permits attachment of the ceramic plate through a coolant gas circulating gap as formed over the liquid cooling jacket while disposing between the liquid cooling jacket and the ceramic plate more than one heat resistant seal material containing therein an elastic body for sealing the coolant gas.

    摘要翻译： 用于晶片处理装置的晶片台，其包括具有内置冷却剂液体循环路径的液体冷却套和附接到液体冷却套上的陶瓷板，并且其中具有用于静电卡盘的加热器和电极， 在将晶片安装在陶瓷板上的同时进行晶片处理的晶片台，其中液体冷却套管允许通过在液体冷却套上形成的冷却剂气体循环间隙来连接陶瓷板，同时设置在液体冷却套和陶瓷之间 在其上容纳多个耐热密封材料，其中包含用于密封冷却剂气体的弹性体。

    Plasma Processing Apparatus And Method
    4.
    发明申请
    Plasma Processing Apparatus And Method 审中-公开
    等离子体处理装置及方法

    公开(公告)号：US20080011425A1

    公开(公告)日：2008-01-17

    申请号：US11779396

    申请日：2007-07-18

    申请人： Ryoji Nishio ,  Ken Yoshioka ,  Saburou Kanai ,  Tadamitsu Kanekiyo ,  Hideki Kihara ,  Koji Okuda

    发明人： Ryoji Nishio ,  Ken Yoshioka ,  Saburou Kanai ,  Tadamitsu Kanekiyo ,  Hideki Kihara ,  Koji Okuda

    IPC分类号： C23F1/00

    CPC分类号： C23C16/4558 ,  C23C16/4404 ,  C23C16/45591 ,  C23C16/4581 ,  C23C16/507 ,  H01J37/321 ,  H01J37/3244 ,  H01J37/32477 ,  H01J37/32495 ,  H01J37/32697 ,  H01L21/67069

    摘要： A plasma processing apparatus includes a sample stage disposed at a lower part of a processing chamber, a bell jar made of an insulative material constituting an upper portion of a vacuum vessel, a coil antenna disposed outside and around the bell jar to which electric power is supplied so as to generate the plasma in a plasma generating space inside of the bell jar, and a Faraday shield mounted on the bell jar and disposed between an external surface of the bell jar and the coil antenna. A ring shaped member made of an electric conductive material is disposed inside of an inner surface of a ring portion of the processing chamber located below a skirt portion of the bell jar and constitutes a part of the processing chamber. The ring shaped member extends upwardly so as to cover a portion of an inner surface of the bell jar.

    摘要翻译： 等离子体处理装置包括设置在处理室的下部的样品台，由构成真空容器的上部的绝缘材料制成的钟罩，设置在电筒的外部和周围的线圈天线 被提供以在钟罩内部的等离子体产生空间中产生等离子体，以及安装在钟罩上并设置在钟罩的外表面和线圈天线之间的法拉第屏蔽。 由导电材料制成的环形构件设置在位于钟罩的裙部下方的处理室的环形部分的内表面的内侧，并构成处理室的一部分。 环形构件向上延伸以覆盖钟罩的内表面的一部分。

    Plasma processing apparatus and method
    6.
    发明授权
    Plasma processing apparatus and method 有权
    等离子体处理装置及方法

    公开(公告)号：US07740739B2

    公开(公告)日：2010-06-22

    申请号：US11001059

    申请日：2004-12-02

    申请人： Ryoji Nishio ,  Ken Yoshioka ,  Saburou Kanai ,  Tadamitsu Kanekiyo ,  Hideki Kihara ,  Koji Okuda

    发明人： Ryoji Nishio ,  Ken Yoshioka ,  Saburou Kanai ,  Tadamitsu Kanekiyo ,  Hideki Kihara ,  Koji Okuda

    IPC分类号： H01L21/306 ,  C23C16/00

    CPC分类号： C23C16/4558 ,  C23C16/4404 ,  C23C16/45591 ,  C23C16/4581 ,  C23C16/507 ,  H01J37/321 ,  H01J37/3244 ,  H01J37/32477 ,  H01J37/32495 ,  H01J37/32697 ,  H01L21/67069

    摘要： A plasma processing apparatus includes a gas ring forming a portion of a vacuum processing chamber and having a blowing port for a processing gas, a bell jar to define a vacuum processing chamber, an antenna for supplying an RF electric field into the vacuum processing chamber to form plasmas, a sample table, a Faraday shield, and a deposition preventive plate attached detachably at least to the inner surface of the gas ring excluding the blowing port. An area of the inner surface of the gas ring including the deposition preventive plate that can be viewed from the sample surface is set to about ½ or more of the area of the sample. A susceptor made of a dielectric material covers the outer surface and the outer lateral side of the sample table. A metal film is disposed with respect to the susceptor, and an RF voltage is applied to the metal film.

    摘要翻译： 等离子体处理装置包括形成真空处理室的一部分并具有用于处理气体的吹出口的气环，用于限定真空处理室的钟罩，用于将真空处理室中的RF电场提供给天线的天线 形成等离子体，样品台，法拉第屏蔽和至少可拆卸地附接到除了吹出口之外的气体环的内表面的防沉积板。 将从样品表面观察的包括防沉积板的气体环的内表面的面积设定为样品面积的约1/2或更多。 由介电材料制成的基座覆盖样品台的外表面和外侧。 相对于基座设置金属膜，向金属膜施加RF电压。

    Wafer processing method
    9.
    发明授权
    Wafer processing method 失效
    晶圆加工方法

    公开(公告)号：US07138606B2

    公开(公告)日：2006-11-21

    申请号：US10658281

    申请日：2003-09-10

    申请人： Seiichiro Kanno ,  Ken Yoshioka ,  Ryoji Nishio ,  Saburou Kanai ,  Hideki Kihara ,  Koji Okuda

    发明人： Seiichiro Kanno ,  Ken Yoshioka ,  Ryoji Nishio ,  Saburou Kanai ,  Hideki Kihara ,  Koji Okuda

    IPC分类号： F27B5/14

    CPC分类号： H01L21/67109 ,  H01L21/6831

    摘要： A wafer processing method for use with a wafer processing apparatus having a liquid cooling jacket with a built-in coolant liquid circulation path and a ceramic plate as attached onto the liquid cooling jacket and having therein a heater and an electrode for an electrostatic chuck. The method enables performance of wafer processing while letting a wafer be mounted on the ceramic plate by a wafer transport. The method includes causing the wafer transport to transport the wafer onto the ceramic plate, pre-heating the wafer while the wafer is held on the ceramic plate for a predetermined length of time, and mounting the preheated wafer on the ceramic plate.

    摘要翻译： 一种与具有内置冷却剂液体循环路径的液体冷却套和安装在液体冷却套上的陶瓷板的晶片处理装置一起使用的晶片处理方法，其中具有加热器和用于静电卡盘的电极。 该方法能够通过晶片输送将晶片安装在陶瓷板上，从而实现晶片处理。 该方法包括使晶片输送将晶片输送到陶瓷板上，在将晶片保持在陶瓷板上预定时间长度的同时预热晶片，并将预热的晶片安装在陶瓷板上。

    Plasma processing apparatus and method
    10.
    发明申请
    Plasma processing apparatus and method 有权
    等离子体处理装置及方法

    公开(公告)号：US20050087305A1

    公开(公告)日：2005-04-28

    申请号：US11001059

    申请日：2004-12-02

    申请人： Ryoji Nishio ,  Ken Yoshioka ,  Saburou Kanai ,  Tadamitsu Kanekiyo ,  Hideki Kihara ,  Koji Okuda

    发明人： Ryoji Nishio ,  Ken Yoshioka ,  Saburou Kanai ,  Tadamitsu Kanekiyo ,  Hideki Kihara ,  Koji Okuda

    IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/507 ,  H01J37/32 ,  H01L21/00 ,  H01L21/306

    CPC分类号： C23C16/4558 ,  C23C16/4404 ,  C23C16/45591 ,  C23C16/4581 ,  C23C16/507 ,  H01J37/321 ,  H01J37/3244 ,  H01J37/32477 ,  H01J37/32495 ,  H01J37/32697 ,  H01L21/67069

    摘要： A plasma processing apparatus includes a gas ring forming a portion of a vacuum processing chamber and having a blowing port for a processing gas, a bell jar to define a vacuum processing chamber, an antenna for supplying an RF electric field into the vacuum processing chamber to form plasmas, a sample table, a Faraday shield, and a deposition preventive plate attached detachably at least to the inner surface of the gas ring excluding the blowing port. An area of the inner surface of the gas ring including the deposition preventive plate that can be viewed from the sample surface is set to about ½ or more of the area of the sample. A susceptor made of a dielectric material covers the outer surface and the outer lateral side of the sample table. A metal film is disposed with respect to the susceptor, and an RF voltage is applied to the metal film.

    摘要翻译： 等离子体处理装置包括形成真空处理室的一部分并具有用于处理气体的吹出口的气环，用于限定真空处理室的钟罩，用于将真空处理室中的RF电场提供给天线的天线 形成等离子体，样品台，法拉第屏蔽和至少可拆卸地附接到除了吹出口之外的气体环的内表面的防沉积板。 将从样品表面观察的包括防沉积板的气体环的内表面的面积设定为样品面积的约1/2或更多。 由介电材料制成的基座覆盖样品台的外表面和外侧。 相对于基座设置金属膜，向金属膜施加RF电压。