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    Hermetic feedthrough
    4.
    发明授权
    Hermetic feedthrough 有权
    气质馈通

    公开(公告)号：US08872035B2

    公开(公告)日：2014-10-28

    申请号：US13564475

    申请日：2012-08-01

    申请人： Kengo Morioka ,  Arne Knudsen ,  Shingo Satou ,  Hidekazu Otomaru ,  Andrew Thom ,  Hiroshi Makino ,  Markus Reiterer ,  Gordon Munns ,  Thomas Miltich ,  Joyce Yamamoto ,  Takahito Hirata

    发明人： Kengo Morioka ,  Arne Knudsen ,  Shingo Satou ,  Hidekazu Otomaru ,  Andrew Thom ,  Hiroshi Makino ,  Markus Reiterer ,  Gordon Munns ,  Thomas Miltich ,  Joyce Yamamoto ,  Takahito Hirata

    IPC分类号： H01B17/26 ,  B05D3/02 ,  A61N1/375

    CPC分类号： A61N1/3754

    摘要： A hermetic feedthrough for an implantable medical device includes a sheet having a hole, where the sheet includes a ceramic comprising alumina. The feedthrough also includes a second material substantially filling the hole, where the second material includes a platinum powder mixture and an alumina additive. The platinum powder mixture includes a first platinum powder having a median particle size of between approximately 3 and 10 micrometers and a second platinum powder that is coarser than the first platinum powder and has a median particle size of between approximately 5 and 20 micrometers. The platinum powder mixture includes between approximately 50 and 80 percent by weight of the first platinum powder and between approximately 20 and 50 percent by weight of the second platinum powder. The first and second materials have a co-fired bond therebetween that hermetically seals the hole.

    摘要翻译： 用于可植入医疗装置的密封馈通包括具有孔的片，其中片包括包含氧化铝的陶瓷。 馈通还包括基本上填充孔的第二材料，其中第二材料包括铂粉末混合物和氧化铝添加剂。 铂粉末混合物包括中值粒径在约3微米至10微米之间的第一铂粉末和比第一铂粉末粗的第二铂粉末，其中位粒度在约5微米至20微米之间。 铂粉末混合物包含第一铂粉末的约50至80重量％和第二铂粉末的约20至50重量％。 第一和第二材料之间具有共烧结，密封该孔。

    HERMETIC FEEDTHROUGH
    8.
    发明申请
    HERMETIC FEEDTHROUGH 有权

    公开(公告)号：US20130032378A1

    公开(公告)日：2013-02-07

    申请号：US13564475

    申请日：2012-08-01

    申请人： Kengo Morioka ,  Arne Knudsen ,  Shingo Satou ,  Hidekazu Otomaru ,  Andrew Thom ,  Hiroshi Makino ,  Markus Reiterer ,  Gordon Munns ,  Thomas Miltich ,  Joyce Yamamoto ,  Takahito Hirata

    发明人： Kengo Morioka ,  Arne Knudsen ,  Shingo Satou ,  Hidekazu Otomaru ,  Andrew Thom ,  Hiroshi Makino ,  Markus Reiterer ,  Gordon Munns ,  Thomas Miltich ,  Joyce Yamamoto ,  Takahito Hirata

    IPC分类号： H01B17/26 ,  B32B38/00 ,  B05D3/02

    CPC分类号： A61N1/3754

    摘要： A hermetic feedthrough for an implantable medical device includes a sheet having a hole, where the sheet includes a ceramic comprising alumina. The feedthrough also includes a second material substantially filling the hole, where the second material includes a platinum powder mixture and an alumina additive. The platinum powder mixture includes a first platinum powder having a median particle size of between approximately 3 and 10 micrometers and a second platinum powder that is coarser than the first platinum powder and has a median particle size of between approximately 5 and 20 micrometers. The platinum powder mixture includes between approximately 50 and 80 percent by weight of the first platinum powder and between approximately 20 and 50 percent by weight of the second platinum powder. The first and second materials have a co-fired bond therebetween that hermetically seals the hole.

    摘要翻译： 用于可植入医疗装置的密封馈通包括具有孔的片，其中片包括包含氧化铝的陶瓷。 馈通还包括基本上填充孔的第二材料，其中第二材料包括铂粉末混合物和氧化铝添加剂。 铂粉末混合物包括中值粒径在约3微米至10微米之间的第一铂粉末和比第一铂粉末粗的第二铂粉末，其中位粒度在约5微米至20微米之间。 铂粉末混合物包含第一铂粉末的约50至80重量％和第二铂粉末的约20至50重量％。 第一和第二材料之间具有共烧结，密封该孔。

    Semiconductor device having high breakdown voltage and method for manufacturing the device
    9.
    发明授权
    Semiconductor device having high breakdown voltage and method for manufacturing the device 失效
    具有高击穿电压的半导体器件及其制造方法

    公开(公告)号：US06429501B1

    公开(公告)日：2002-08-06

    申请号：US09522171

    申请日：2000-03-09

    申请人： Masanobu Tsuchitani ,  Shingo Satou

    发明人： Masanobu Tsuchitani ,  Shingo Satou

    IPC分类号： H01L2358

    CPC分类号： H01L29/0615 ,  H01L29/0638 ,  H01L29/7395 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A power device has its main junction formed in a central portion of an N-type substrate. A P-type layer is formed in a peripheral surface portion of the substrate. A P−-type RESURF layer of a lower impurity concentration than the P-type layer is formed outside and in contact with the P-type layer. An N+-channel stopper layer is formed in an edge surface portion of the substrate. The channel stopper layer is separated from the RESURF layer by a predetermined distance. A recess is formed in that surface portion of the substrate between the P-type layer and the channel stopper layer, which includes a surface portion of the RESURF layer. A semiconductive film is formed in the recess. The RESURF layer has an impurity concentration of about 1015-1016 atoms/cm3 where it contacts the semiconductive film.

    摘要翻译： 功率器件的主结点形成在N型衬底的中心部分。 在基板的周面部形成有P型层。 比P型层低的杂质浓度的P型RESURF层形成在P型层之外并与P型层接触。 在衬底的边缘表面部分中形成N +沟道阻挡层。 通道阻挡层与RESURF层隔开预定距离。 在P型层和沟道阻挡层之间的基板的表面部分形成凹部，其包括RESURF层的表面部分。 在凹部中形成半导体膜。 RESURF层的接触半导体膜的杂质浓度约为1015-1016原子/ cm3。

    Semiconductor device of high breakdown voltage using semiconductive film and its manufacturing method
    10.
    发明授权
    Semiconductor device of high breakdown voltage using semiconductive film and its manufacturing method 失效
    使用半导体膜的高击穿电压的半导体器件及其制造方法

    公开(公告)号：US06222231B1

    公开(公告)日：2001-04-24

    申请号：US09512319

    申请日：2000-02-24

    申请人： Shingo Satou ,  Masanobu Tsuchitani

    发明人： Shingo Satou ,  Masanobu Tsuchitani

    IPC分类号： H01L2976

    CPC分类号： H01L29/7813 ,  H01L23/3171 ,  H01L29/408 ,  H01L29/8611 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Continuously after forming a semiconductive film, a conducting film is formed on the semiconductive film. This conducting film serves as a block film for blocking diffusion of oxygen when a heated wafer is transferred from a furnace to the atmosphere. As a result, oxygen is prevented from entering the semiconductive film from the outside and diffusing therein. Further, after protecting the semiconductive film, the conducting film is entirely removed by etching.

    摘要翻译： 在形成半导体膜之后，在半导体膜上形成导电膜。 当加热的晶片从炉转移到大气中时，该导电膜用作阻挡氧扩散的阻挡膜。 结果，防止氧从外部进入半导体膜并在其中扩散。 此外，在保护半导体膜之后，通过蚀刻完全去除导电膜。