摘要:
A small, simple current-injection diamond ultraviolet light-emitting device comprising a high-quality diamond grown by chemical vapor deposition (CVD) method (1), a surface conductive layer (2) provided on the surface of the diamond, and electrodes (4, 5) provided on the surface conductive layer. The device is a free-exciton recombination emission diamond ultraviolet light-emitting device comprising a CVD diamond crystal where the free-exciton recombination radiation (235 nm) caused by current injection is dominant.
摘要:
A diamond ultraviolet luminescent element (10) having a current-injection light-emitting diode structure includes a high-quality boron-doped p-type diamond crystal (semiconductor layer) (1) synthesized by the high pressure and high temperature method; a phosphorous-doped n-type diamond crystal (n-type semiconductor layer) (3) formed on the first diamond surface by the chemical vapor deposition; an electrode (5) formed on the surface of the n-type semiconductor layer (3); and an electrode (7) formed on the surface of the p-type semiconductor layer (1). The luminescence (235 nm) attributed to the recombination of free excitons resulting from current injection dominates in ultraviolet wavelength region (10).
摘要:
A gas sensor including a substrate, a heater formed on said substrate, and a gas sensing material to be heated by said heater, wherein the area of the substrate under the heater is removed or reduced in its thickness to form a cavity. The thickness of the layer of the gas sensing material is reduced gradually toward the peripheral of the gas sensing material.
摘要:
A central magnet of a plurality of magnets arranged to be different in polarities is detected by two hall ICs; therefore, reduction in size can be achieved by reducing the number of the magnets; and at the same time, the number of the hall ICs can be maintained and the reliability can be secured, as compared with a configuration in which the magnets and the hall ICs individually respond in one to one correspondence.
摘要:
A central magnet of a plurality of magnets arranged to be different in polarities is detected by two hall ICs; therefore, reduction in size can be achieved by reducing the number of the magnets; and at the same time, the number of the hall ICs can be maintained and the reliability can be secured, as compared with a configuration in which the magnets and the hall ICs individually respond in one to one correspondence.
摘要:
Electrical energy is charged to a dielectric by using an energizing unit. A relay apparatus includes a first electromagnetic relay and a second electromagnetic relay. One light-emitting transistor is turned on by self-maintaining the second electromagnetic relay and, then, one light-receiving transistor is turned on. Another light-emitting diode is turned on by discharging the dielectric and another light-receiving transistor is turned on. A power voltage is applied to a base of a transistor for start, and the transistor for start is turned on. The first electromagnetic relay is self-maintained, an interval between output terminals is energized, and a load is driven. Accordingly, the relay apparatus can be miniaturized with a safety function and with low costs.
摘要:
A solar cell module includes a first substrate and a plurality of photoelectric conversion elements disposed on the first substrate. Each of the plurality of photoelectric conversion elements includes a first electrode, an electron transport layer, a perovskite layer, a hole transport layer, and a second electrode. In at least two of the photoelectric conversion elements adjacent to each other, the hole transport layers are extended continuous layers; and the first electrodes, the electron transport layers, and the perovskite layers in the at least two of the photoelectric conversion elements adjacent to each other are separated by the hole transport layer. The hole transport layer includes, as hole transport material, a polymer having a weight average molecular weight of 2,000 or more or a compound having a molecular weight of 2,000 or more.
摘要:
To provide a photoelectric conversion element, including a first substrate, a first transparent electrode disposed on the first substrate, a hole-blocking layer disposed on the first transparent electrode, an electron-transporting layer that is disposed on the hole-blocking layer and includes an electron-transporting semiconductor on a surface of which a photosensitizing compound is adsorbed, a hole-transporting layer that is connected to the electron-transporting layer and includes a hole-transporting material, and a second electrode disposed on the hole-transporting layer, wherein the photoelectric conversion element includes an output extraction terminal part configured to extract electricity out from the photoelectric conversion element, and the output extraction terminal part is formed with a plurality of micropores piercing through the hole-blocking layer.
摘要:
An image processing device includes an operation unit and is able to receive a plurality of operation instructions in parallel from the operation unit and a portable information processing terminal. The image processing device includes: an instruction processing unit that executes processing according to the received operation instructions. The instruction processing unit, when the operation instruction is a predetermined instruction generated by an operation to the operation unit included in the image processing device, executes predetermined processing according to the predetermined instruction, when the operation instruction is a predetermined instruction generated by an operation to the information processing terminal, stores the predetermined instruction in a storage medium of the image processing device, and when the operation instruction is a processing execution permission instruction, executes the predetermined processing according to the predetermined instruction corresponding to the processing execution permission instruction among the predetermined instructions stored in the storage medium.
摘要:
A semiconductor device includes: a semiconductor substrate having an active area formed on a major surface of the semiconductor substrate; an interlayer insulating film and a wiring layer formed on predetermined regions of the active area; and a sealing resin film covering the interlayer insulating film, the wiring layer, and the major surface of the semiconductor substrate and filling a groove surrounding the active area. The sealing resin film 9 and a junction made of the sealing resin film filled in the groove are formed to be continuous with each other. Thus, the occurrence of a separation of the sealing resin and the inward propagation thereof are prevented.