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    WOUND IRON CORE FOR STATIC APPARATUS, AMORPHOUS TRANSFORMER AND COIL WINDING FRAME FOR TRANSFORMER
    1.
    发明申请
    WOUND IRON CORE FOR STATIC APPARATUS, AMORPHOUS TRANSFORMER AND COIL WINDING FRAME FOR TRANSFORMER 有权
    用于静态设备的永磁铁芯，变压器的非线性变压器和线圈绕组

    公开(公告)号：US20110234360A1

    公开(公告)日：2011-09-29

    申请号：US13057873

    申请日：2009-08-26

    申请人： Kenji Nakanoue ,  Kazuyuki Fukui ,  Hidemasa Yamaguchi ,  Kouhei Satou ,  Tatsuhito Azegami ,  Makoto Shinohara ,  Toshiaki Takahashi ,  Tooru Honma ,  Masanao Kuwabara ,  Toshiki Shirahata ,  Yuuji Satou ,  Manabu Dohi ,  Ryosuke Mikoshiba ,  Hiroyuki Endou

    发明人： Kenji Nakanoue ,  Kazuyuki Fukui ,  Hidemasa Yamaguchi ,  Kouhei Satou ,  Tatsuhito Azegami ,  Makoto Shinohara ,  Toshiaki Takahashi ,  Tooru Honma ,  Masanao Kuwabara ,  Toshiki Shirahata ,  Yuuji Satou ,  Manabu Dohi ,  Ryosuke Mikoshiba ,  Hiroyuki Endou

    IPC分类号： H01F30/06 ,  H01F27/245

    CPC分类号： H01F27/245 ,  H01F27/06 ,  H01F27/2455 ,  H01F27/25 ,  H01F27/306 ,  H01F27/324 ,  H01F27/34 ,  H01F2003/106

    摘要： Disclosed is a wound iron core (3) for a static apparatus in which magnetic paths in the inside of the wound iron core are subdivided to improve iron core characteristics. The iron core (3) is configured by using two or more kinds of magnetic materials (11 to 14) with different magnetic permeabilities to form laminated blocks with single plates or a plurality of laminated plates and by alternately arranging the laminated blocks with different magnetic permeabilities from the inner circumference. An iron core material (14) with large magnetic permeability out of iron core materials with different magnetic permeabilities is arranged on the inner circumference side. Further, when the iron core materials with different magnetic permeabilities are alternately arranged, the iron core materials (11) with the same magnetic permeability are configured to gradually change in thickness to ease an excessive magnetic flux density distribution in the iron core. A ring-shaped iron core is configured such that a plurality of block-like laminated members, which are each formed by laminating a plurality of strip-like amorphous material thin plates, are laminated and formed into a ring shape and a sheet-like non-magnetic insulation material is arranged between the n-th (n: an integer of two or more) layer of the ring-shaped block-like laminated members from the most inner circumference side and the (n+1)-th layer of the ring-shaped block-like laminated members from the most inner circumference side.

    摘要翻译： 公开了一种用于静电设备的绕铁心（3），其中绕铁心的内部的磁路被细分以改善铁芯特性。 铁芯（3）通过使用具有不同磁导率的两种或更多种磁性材料（11至14）构成，以形成具有单板或多个层压板的叠层块，并且通过交替地布置具有不同磁导率的层叠块 从内圆。 在内周侧设置有具有不同磁导率的铁芯材料具有大磁导率的铁芯材料（14）。 此外，当具有不同磁导率的铁芯材料交替布置时，具有相同导磁率的铁芯材料（11）被配置为逐渐变化，以减轻铁芯中过大的磁通密度分布。 环状铁芯被构造为使得通过层叠多个带状非晶材料薄板而形成的多个块状层叠构件被层压并形成为环状，并且片状非铁 磁性绝缘材料布置在环形块状层叠构件的第n（n：整数或两个以上的整数）层的最内周侧和第（n + 1）层 从最内周侧的环状块状层叠构件。

    Method for purifying organometal compound
    3.
    发明授权
    Method for purifying organometal compound 失效
    有机金属化合物的纯化方法

    公开(公告)号：US5783717A

    公开(公告)日：1998-07-21

    申请号：US517093

    申请日：1995-08-21

    申请人： Hiromi Ohsaki ,  Toshinobu Ishihara ,  Kazuyuki Asakura ,  Isao Kaneko ,  Kouhei Satou

    发明人： Hiromi Ohsaki ,  Toshinobu Ishihara ,  Kazuyuki Asakura ,  Isao Kaneko ,  Kouhei Satou

    IPC分类号： C07F3/06 ,  C07F5/00 ,  C07F5/06 ,  C07F3/00

    CPC分类号： C07F5/063 ,  C07F3/06 ,  C07F5/00

    摘要： A method for purifying an organometal compound by removing oxygen atom-containing compounds included in the organometal compound as impurities is herein disclosed. The method comprises the steps of mixing an organometal compound represented by the following formula: ##STR1## with a crude product including an oxygen atom-containing compound represented by the following formula: R.sub.3-n M.sup.1 (OR).sub.n or R.sub.2-m M.sup.2 (OR).sub.m and an alkylaluminum chloride represented by the formula: X.sub.6-q Al.sub.2 R and then distilling the resulting mixture. In the foregoing formulas, R's may be the same or different and each represents an alkyl group having 1 to 3 carbon atoms; M.sup.1 represents a trivalent metal element; M.sup.2 represents a divalent metal element; n is an integer of 1, 2 or 3; m is an integer of 1 or 2; q is an integer ranging from 1 to 5; and X represents a chlorine atom.

    摘要翻译： 本文公开了通过除去作为杂质的有机金属化合物中包含的含氧原子的化合物来纯化有机金属化合物的方法。 该方法包括以下步骤：将由下式表示的有机金属化合物：＆lt; IMAGE＆gt;与由下式表示的含氧原子的化合物的粗产物：R3-n M1（OR）n或R2-m M2（ OR）m和由式X6-qAl2R表示的烷基氯化铝，然后蒸馏所得混合物。 在上述式中，R可以相同或不同，表示碳原子数1〜3的烷基。 M1表示三价金属元素; M2表示二价金属元素; n为1,2或3的整数; m为1或2的整数; q为1〜5的整数; X表示氯原子。

    Vacuum processing apparatus
    4.
    发明授权
    Vacuum processing apparatus 有权
    真空加工设备

    公开(公告)号：US07887669B2

    公开(公告)日：2011-02-15

    申请号：US11683040

    申请日：2007-03-07

    申请人： Kouhei Satou ,  Go Miya ,  Hiroshi Akiyama

    发明人： Kouhei Satou ,  Go Miya ,  Hiroshi Akiyama

    IPC分类号： C23F1/00 ,  H01L21/306

    CPC分类号： H01J37/3244 ,  H01J37/32449

    摘要： The invention provides a plasma processing apparatus for processing a wafer mounted on a sample stage placed in a vacuum processing chamber using a plasma generated in the vacuum chamber. The plasma processing apparatus comprises a plate placed in the vacuum processing vessel above and opposed to the wafer, the plate having a through hole through which a first processing gas is introduced; a first and second cylindrical member arranged vertically and adjacently; and means communicating with the gap between the first and second cylindrical member for supplying a second processing gas. The wafer is processed while the first processing gas and the second processing gas having different compositions are supplied.

    摘要翻译： 本发明提供一种等离子体处理装置，用于使用在真空室中产生的等离子体来处理安装在放置在真空处理室中的样品台上的晶片。 等离子体处理装置包括放置在真空处理容器中的与晶片相对的板，该板具有引入第一处理气体的通孔; 垂直和相邻布置的第一和第二圆柱形构件; 并且与第一和第二圆柱形构件之间的间隙连通以用于供应第二处理气体的装置。 在提供具有不同成分的第一处理气体和第二处理气体的同时处理晶片。

    VACUUM PROCESSING APPARATUS
    5.
    发明申请
    VACUUM PROCESSING APPARATUS 有权
    真空加工设备

    公开(公告)号：US20080110400A1

    公开(公告)日：2008-05-15

    申请号：US11683040

    申请日：2007-03-07

    申请人： Kouhei Satou ,  Go Miya ,  Hiroshi Akiyama

    发明人： Kouhei Satou ,  Go Miya ,  Hiroshi Akiyama

    IPC分类号： C23C16/00

    CPC分类号： H01J37/3244 ,  H01J37/32449

    摘要： The invention provides a plasma processing apparatus for processing a wafer mounted on a sample stage placed in a vacuum processing chamber using a plasma generated in the vacuum chamber. The plasma processing apparatus comprises a plate placed in the vacuum processing vessel above and opposed to the wafer, the plate having a through hole through which a first processing gas is introduced; a first and second cylindrical member arranged vertically and adjacently; and means communicating with the gap between the first and second cylindrical member for supplying a second processing gas. The wafer is processed while the first processing gas and the second processing gas having different compositions are supplied.

    摘要翻译： 本发明提供一种等离子体处理装置，用于使用在真空室中产生的等离子体来处理安装在放置在真空处理室中的样品台上的晶片。 等离子体处理装置包括放置在真空处理容器中的与晶片相对的板，该板具有引入第一处理气体的通孔; 垂直和相邻布置的第一和第二圆柱形构件; 并且与第一和第二圆柱形构件之间的间隙连通以用于供应第二处理气体的装置。 在提供具有不同成分的第一处理气体和第二处理气体的同时处理晶片。

    Inspection apparatus for tubular product and inspection method therefor
    6.
    发明授权
    Inspection apparatus for tubular product and inspection method therefor 有权
    管状产品检验装置及其检验方法

    公开(公告)号：US09116134B2

    公开(公告)日：2015-08-25

    申请号：US13493133

    申请日：2012-06-11

    申请人： Kouhei Satou ,  Hirotsugu Toe ,  Takafumi Satsuki

    发明人： Kouhei Satou ,  Hirotsugu Toe ,  Takafumi Satsuki

    IPC分类号： H04N7/18 ,  G01N21/954 ,  B21C37/06 ,  B21C51/00 ,  G01B11/06 ,  G01B11/10

    CPC分类号： G01N21/954 ,  B21C37/06 ,  B21C51/00 ,  G01B11/06 ,  G01B11/105

    摘要： An inspection apparatus includes: a camera for acquiring an image of the whole area of an end face of the tubular product; a first light source for illuminating an outer peripheral edge of the end face side of the tubular product over the entire circumference thereof, a second light source for illuminating an inner peripheral edge of the end face side of the tubular product over the entire circumference thereof; and a third light source for illuminating an inner peripheral surface of the end face side of the tubular product over the entire circumference thereof. The apparatus uses the image of the tubular product using the first and second light sources to calculate an outer diameter and a wall thickness of the tubular product and illumination from the third light source for detecting a surface defect on the inner peripheral surface of the tubular product.

    摘要翻译： 检查装置包括：照相机，用于获取管状产品的端面的整个区域的图像; 第一光源，其用于照射管状产品的端面侧的外周边缘的整个圆周;第二光源，用于照射管状产品的端面侧的内周边缘的整个圆周; 以及第三光源，用于在其整个圆周上照射管状产品的端面侧的内周面。 该装置使用第一和第二光源的管状产品的图像来计算管状产品的外径和壁厚以及来自第三光源的照明，用于检测管状产品的内周面上的表面缺陷 。

    PLASMA ETCHING APPARATUS AND PLASMA ETCHING METHOD
    7.
    发明申请
    PLASMA ETCHING APPARATUS AND PLASMA ETCHING METHOD 审中-公开
    等离子体蚀刻装置和等离子体蚀刻方法

    公开(公告)号：US20080110569A1

    公开(公告)日：2008-05-15

    申请号：US11682382

    申请日：2007-03-06

    申请人： Go Miya ,  Junichi Tanaka ,  Seiichiro Kanno ,  Naoshi Itabashi ,  Hiroshi Akiyama ,  Kouhei Satou

    发明人： Go Miya ,  Junichi Tanaka ,  Seiichiro Kanno ,  Naoshi Itabashi ,  Hiroshi Akiyama ,  Kouhei Satou

    IPC分类号： C23F1/00

    CPC分类号： H01L21/67069 ,  H01J37/32935 ,  H01J37/32972

    摘要： The invention provides a method and apparatus for performing plasma etching to form a gate electrode on a large-scale substrate while ensuring the in-plane uniformity of the CD shift of the gate electrode. The present invention measures a radical density distribution of plasma in the processing chamber, feeds processing gases into the processing chamber through multiple locations and controls either the flow rates or compositions of the respective processing gases or the in-plane temperature distribution of a stage on which the substrate is placed, or feeds processing gases into the processing chamber through multiple locations and controls both the flow rates or compositions of the processing gases and the in-plane temperature distribution of the stage on which the substrate is placed.

    摘要翻译： 本发明提供了一种用于在确保栅电极的CD偏移的面内均匀性的同时在大尺寸基板上进行等离子体蚀刻以形成栅电极的方法和装置。 本发明测量处理室中的等离子体的自由基密度分布，通过多个位置将处理气体进料到处理室中，并且控制各个处理气体的流速或组成或其上的平面上的温度分布 衬底被放置或者通过多个位置将处理气体进料到处理室中，并控制处理气体的流速或组成以及放置衬底的阶段的面内温度分布。

    PLASMA ETCHING APPARATUS AND PLASMA ETCHING METHOD
    8.
    发明申请
    PLASMA ETCHING APPARATUS AND PLASMA ETCHING METHOD 审中-公开
    等离子体蚀刻装置和等离子体蚀刻方法

    公开(公告)号：US20100167426A1

    公开(公告)日：2010-07-01

    申请号：US12723443

    申请日：2010-03-12

    申请人： Naoyuki Kofuji ,  Hiroshi Akiyama ,  Kouhei Satou

    发明人： Naoyuki Kofuji ,  Hiroshi Akiyama ,  Kouhei Satou

    IPC分类号： H01L21/66 ,  H01L21/3065

    CPC分类号： H01L21/32136 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/32137

    摘要： The invention provides a method for overcoming the drawbacks of deteriorated throughput, deteriorated reproducibility and plasma discharge instability when continuous discharge is performed during multiple steps of plasma etching. The present invention provides a gas switching method for switching from gas supply source 101 to gas supply source 111, wherein the gas supply source 101 is switched to gas supply source 111 by opening a valve 114 in advance, setting a flow rate of MFC 112 to a flow rate used in the subsequent step, letting the gas supply source 111 to flow toward an exhaust means 5, and closing the valve 114 simultaneously when opening the valve 113, wherein a volume V1 of an area of a gas pipe 115 surrounded by the valve 113, the valve 114 and the MFC 112 is set sufficiently smaller than a volume Vo from the shower plate to the valve 113 including a gas reservoir 10 and a processing gas line 8. The present arrangement enables to prevent the occurrence of pressure undershoot and to solve the problem of discharge instability.

    摘要翻译： 本发明提供了一种在等离子体蚀刻的多个步骤中进行连续放电时，克服了劣化生产量，再现性劣化和等离子体放电不稳定性的缺陷的方法。 本发明提供一种从气体供给源101切换到气体供给源111的气体切换方法，其中，气体供给源101通过预先打开阀114而切换到气体供给源111，将MFC112的流量设定为 在后续步骤中使用的流量，使得气体供应源111朝向排气装置5流动，并且在打开阀113时同时关闭阀114，其中由管道115包围的气体管道115的区域的体积V1 阀113，阀114和MFC112被设定为足够小于从喷淋板到包括气体储存器10和处理气体管线8的阀113的体积Vo。本配置能够防止压力下冲的发生， 解决放电不稳定的问题。

    PLASMA ETCHING APPARATUS AND PLASMA ETCHING METHOD
    9.
    发明申请
    PLASMA ETCHING APPARATUS AND PLASMA ETCHING METHOD 审中-公开
    等离子体蚀刻装置和等离子体蚀刻方法

    公开(公告)号：US20080078505A1

    公开(公告)日：2008-04-03

    申请号：US11670048

    申请日：2007-02-01

    申请人： Naoyuki Kofuji ,  Hiroshi Akiyama ,  Kouhei Satou

    发明人： Naoyuki Kofuji ,  Hiroshi Akiyama ,  Kouhei Satou

    IPC分类号： H01L21/306

    CPC分类号： H01L21/32136 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/32137

    摘要： The invention provides a method for overcoming the drawbacks of deteriorated throughput, deteriorated reproducibility and plasma discharge instability when continuous discharge is performed during multiple steps of plasma etching. The present invention provides a gas switching method for switching from gas supply source 101 to gas supply source 111, wherein the gas supply source 101 is switched to gas supply source 111 by opening a valve 114 in advance, setting a flow rate of MFC 112 to a flow rate used in the subsequent step, letting the gas supply source 111 to flow toward an exhaust means 5, and closing the valve 114 simultaneously when opening the valve 113, wherein a volume V1 of an area of a gas pipe 115 surrounded by the valve 113, the valve 114 and the MFC 112 is set sufficiently smaller than a volume Vo from the shower plate to the valve 113 including a gas reservoir 10 and a processing gas line 8. The present arrangement enables to prevent the occurrence of pressure undershoot and to solve the problem of discharge instability.

    摘要翻译： 本发明提供了一种在等离子体蚀刻的多个步骤中进行连续放电时，克服了劣化生产量，再现性劣化和等离子体放电不稳定性的缺陷的方法。 本发明提供一种从气体供给源101切换到气体供给源111的气体切换方法，其中，气体供给源101通过预先打开阀114而切换到气体供给源111，将MFC112的流量设定为 在后续步骤中使用的流量，使得气体供应源111朝向排气装置5流动，并且在打开阀113时同时关闭阀门114，其中气体管道115的区域的体积V 1被 阀113，阀114和MFC112被设定为充分小于从喷淋板到包括气体储存器10和加工气体管线8的阀113的体积Vo。本发明能够防止压力下冲的发生 并解决放电不稳定的问题。