公开(公告)号：US06671138B2

公开(公告)日：2003-12-30

申请号：US10033602

申请日：2001-12-27

申请人： Kenji Noma ,  Hitoshi Kanai ,  Kenichi Aoshima

发明人： Kenji Noma ,  Hitoshi Kanai ,  Kenichi Aoshima

IPC分类号： G11B539

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B2005/3996

摘要： An object of the present invention is to provide a magnetoresistive effect type of head that is high in the magnetoresistive rate while including the laminated ferrimagnetic film. The fixed magnetic layer of the magnetoresistive effect type of head has a first fixed magnetic layer, a second fixed magnetic layer laminated at a position farther from the free magnetic layer as compared with the first fixed magnetic layer, and an opposite-parallel-coupling intermediate layer interposed between the first fixed magnetic layer and the second fixed magnetic layer, in which magnetizations of the first and second fixed magnetic layers are coupled with one another in such a manner that the magnetizations are pointed in directions which are substantially parallel and mutually opposite. The second fixed magnetic layer is formed with a material that is different from a material of said first fixed magnetic layer, and has a resistivity higher than that of said first fixed magnetic layer.

摘要翻译： 本发明的目的是提供一种磁阻效应型磁头，其磁阻率高，同时包含叠层铁氧体膜。 磁阻效应型磁头的固定磁性层具有与第一固定磁性层相比层压在离自由磁性层更远的位置的第一固定磁性层，第二固定磁性层和相对平行耦合中间体 介于第一固定磁性层和第二固定磁性层之间的层，其中第一和第二固定磁性层的磁化彼此耦合，使得磁化指向基本平行且相互相反的方向。 第二固定磁性层由不同于所述第一固定磁性层的材料的材料形成，并且具有高于所述第一固定磁性层的电阻率的电阻率。

公开(公告)号：US06501627B2

公开(公告)日：2002-12-31

申请号：US09994262

申请日：2001-11-26

申请人： Kenji Noma ,  Hitoshi Kanai ,  Junichi Kane ,  Kenichi Aoshima

发明人： Kenji Noma ,  Hitoshi Kanai ,  Junichi Kane ,  Kenichi Aoshima

IPC分类号： G11B539

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B5/3967 ,  G11B2005/3996

摘要： A spin-valve magnetoresistive head having end parts of a free magnetic layer insensitive to an external magnetic field so as to improve sensitivity is provided. The spin-valve magnetoresistive head includes, at least on the terminal part sides, a lamination formed of a first antiferromagnetic layer, a soft magnetic layer, an antiparallel coupling intermediate layer, and a first free magnetic layer.

公开(公告)号：US06759120B2

公开(公告)日：2004-07-06

申请号：US09726752

申请日：2000-11-30

申请人： Hong Jongill ,  Kenichi Aoshima ,  Kenji Noma ,  Junichi Kane ,  Hitoshi Kanai

发明人： Hong Jongill ,  Kenichi Aoshima ,  Kenji Noma ,  Junichi Kane ,  Hitoshi Kanai

IPC分类号： G11B531

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G11B5/3903 ,  G11B2005/3996 ,  H01F10/3268 ,  H01F41/302 ,  H01F41/325 ,  H01L43/08 ,  H01L43/12 ,  Y10S428/911 ,  Y10T428/1114 ,  Y10T428/1121

摘要： There is disclosed a magnetoresistive film in which increase of a coupling field accompanying thickness reduction of a middle layer is inhibited. The magnetoresistive film is a multilayered film including a pinned layer 3 having magnetization whose direction is fixed, a nonmagnetic middle layer 4 formed on the pinned layer, and a free layer 5 formed on the middle layer and provided with magnetization whose direction changes in accordance with an external magnetic field, the magnetoresistive film indicates a magnitude of resistance in accordance with an angle formed by the magnetization direction of the pinned layer and the magnetization direction of the free layer, and a copper oxide layer 7 of an oxide including a copper element is formed directly on the free layer, or on the free layer via an oxide layer 6 of a material fabricated by oxidizing a material constituting the free layer.

摘要翻译： 公开了一种磁阻膜，其中伴随着中间层的厚度减小的耦合场的增加被抑制。 磁阻膜是一种多层膜，其包括具有固定方向的磁化的被钉扎层3，形成在钉扎层上的非磁性中间层4和形成在中间层上的自由层5，该自由层5的方向根据 外部磁场，磁阻膜表示根据被钉扎层的磁化方向和自由层的磁化方向形成的角度的电阻大小，包含铜元素的氧化物的氧化铜层7为 通过氧化构成自由层的材料制成的材料的氧化物层6直接形成在自由层上或自由层上。

公开(公告)号：US06493196B1

公开(公告)日：2002-12-10

申请号：US09476005

申请日：1999-12-29

申请人： Kenji Noma ,  Hitoshi Kanai ,  Junichi Kane ,  Kenichi Aoshima

发明人： Kenji Noma ,  Hitoshi Kanai ,  Junichi Kane ,  Kenichi Aoshima

IPC分类号： G11B539

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/012 ,  G11B5/3903 ,  G11B2005/3996 ,  Y10T29/49034

摘要： A spin-valve magnetoresistive sensor includes a free layer of a ferromagnetic material, a pinned layer provided on the free layer and a pinning layer of an anti-ferromagnetic material provided on the pinned layer, the anti-ferromagnetic material being an ordered alloy containing manganese. The pinned layer includes a first pinned layer of a ferromagnetic material, a second pinned layer of a ferromagnetic material provided on the first pinned layer and an intermediate layer interposed between the first and second pinned layers such that the first and second pinned layers establish a super-exchange interaction in an anti-parallel manner. The second pinned layer has a magnetic moment smaller than a magnetic moment of the first pinned layer.

摘要翻译： 自旋阀磁阻传感器包括铁磁材料的自由层，设置在自由层上的钉扎层和设置在钉扎层上的反铁磁材料的钉扎层，反铁磁材料是含有锰的有序合金 。 被钉扎层包括铁磁材料的第一固定层，设置在第一被钉扎层上的铁磁材料的第二钉扎层和介于第一和第二钉扎层之间的中间层，使得第一和第二钉扎层建立超级 以反并行方式交换互动。 第二钉扎层具有小于第一钉扎层的磁矩的磁矩。

公开(公告)号：US06721147B2

公开(公告)日：2004-04-13

申请号：US09826053

申请日：2001-04-04

申请人： Kenichi Aoshima ,  Kenji Noma ,  Junichi Ito

发明人： Kenichi Aoshima ,  Kenji Noma ,  Junichi Ito

IPC分类号： G11B539

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3932 ,  G11B2005/3996

摘要： A magnetoresistance effect magnetic head includes a magnetoresistance effect element having first and second ends. An electrically insulating biasing portion is at ends of the magnetoresistance effect element to apply a longitudinal bias magnetic field to the magnetoresistance effect element and to suppress leakage current at the ends of the magnetoresistance element. The biasing portion can include an intermediate longitudinal bias application layer disposed between a first insulating antiferromagnetic layer and a second layer that can be an antiferromagnetic layer. The bias portion can also be formed as one bias application layer.

摘要翻译： 磁阻效应磁头包括具有第一和第二端的磁阻效应元件。 电磁绝缘偏压部分位于磁阻效应元件的端部，以将纵向偏置磁场施加到磁阻效应元件并抑制磁阻元件端部的泄漏电流。 偏压部分可以包括设置在可以是反铁磁层的第一绝缘反铁磁层和第二层之间的中间纵向偏置施加层。 偏置部分也可以形成为一个偏压施加层。

公开(公告)号：US06249407B1

公开(公告)日：2001-06-19

申请号：US09411354

申请日：1999-10-01

申请人： Kenichi Aoshima ,  Kenji Noma

发明人： Kenichi Aoshima ,  Kenji Noma

IPC分类号： G11B539

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B5/3909 ,  G11B2005/3996 ,  H01L43/08

摘要： In a current perpendicular type magnetoresistive device, a current efficiently flows in a direction perpendicular to a plane of an MR element and the sensitivity of the MR element is increased. Upper and lower shielding layers form a gap therebetween so that the MR element is situated within the gap. Upper and lower gap layers are provided within the gap so that the MR element is interposed between the upper and lower gap layers. The upper gap layer is provided between the upper shielding layer and the MR element. The lower gap layer is provided between the lower shielding layer and the MR element. The lower gap layer is formed from tantalum. An under layer formed from a material having a body-centered cubic structure is interposed between the lower shielding layer and the lower gap layer.

摘要翻译： 在电流垂直型磁阻器件中，电流有效地沿与MR元件的平面垂直的方向流动，并且MR元件的灵敏度增加。 上下屏蔽层在它们之间形成间隙，使得MR元件位于间隙内。 上间隙层和下间隙层设置在间隙内，使得MR元件介于上下间隙层之间。 上间隙层设置在上屏蔽层和MR元件之间。 下间隙层设置在下屏蔽层和MR元件之间。 下间隙层由钽形成。 由具有体心立方结构的材料形成的底层插入在下屏蔽层和下间隙层之间。

公开(公告)号：US06556391B1

公开(公告)日：2003-04-29

申请号：US09594115

申请日：2000-06-14

申请人： Kenichi Aoshima ,  Kenji Noma

发明人： Kenichi Aoshima ,  Kenji Noma

IPC分类号： G11B539

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3932 ,  G11B2005/3996

摘要： A magnetoresistance effect magnetic head includes a magnetoresistance effect element having a first end and a second end. A biasing portion is provided at the first end and the second end of the magnetoresistance effect element for applying a longitudinal bias magnetic field to the magnetoresistance effect element at the first end or the second end. The biasing portion includes an intermediate layer disposed between an antiferromagnetic first layer and a second layer.

摘要翻译： 磁阻效应磁头包括具有第一端和第二端的磁阻效应元件。 偏置部分设置在磁阻效应元件的第一端和第二端，用于在第一端或第二端向磁阻效应元件施加纵向偏置磁场。 偏置部分包括设置在反铁磁第一层和第二层之间的中间层。

公开(公告)号：US6123780A

公开(公告)日：2000-09-26

申请号：US6977

申请日：1998-01-14

申请人： Hitoshi Kanai ,  Kenichi Aoshima ,  Kenichiro Yamada ,  Mitsumasa Okada ,  Eiji Shimizu ,  Junichi Kane

发明人： Hitoshi Kanai ,  Kenichi Aoshima ,  Kenichiro Yamada ,  Mitsumasa Okada ,  Eiji Shimizu ,  Junichi Kane

IPC分类号： G11B5/31 ,  G11B5/39 ,  C21D1/04

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B5/3967 ,  G11B2005/3996 ,  G11B5/3163

摘要： A method for manufacturing a spin valve GMR head is describe in which a fixed magnetic layer of the head may maintain magnetization in a desired orientation. In one aspect of the invention, the method comprises steps of: forming a magnetic film including at least a free magnetic layer, a non-magnetic metallic layer, a fixed magnetic layer, and a magnetic domain control layer; subjecting the magnetic film to a first heat treatment under a magnetic field to enhance magnetic anisotropy of the free magnetic layer; and subjecting the magnetic film to a second heat treatment under a magnetic field and at a higher temperature than the maximum temperature applied in the processes that precede the second heat treatment, to fix the magnetization in the fixed magnetic layer. In anther aspect of the invention, the method comprises steps of: forming a magnetic film including a free magnetic layer, a non-magnetic metallic layer, a fixed magnetic layer, and a magnetic domain control layer; subjecting the magnetic film to a first heat treatment under a magnetic field to fix the magnetization in the fixed magnetic layer; subjecting the magnetic film to a second heat treatment under a magnetic field to enhance magnetic anisotropy of the free magnetic layer; and subjecting the magnetic film to a third heat treatment in the absence of an externally applied magnetic field.

摘要翻译： 描述了用于制造自旋阀GMR头的方法，其中磁头的固定磁性层可以将磁化保持在期望的取向。 在本发明的一个方面，所述方法包括以下步骤：形成至少包括自由磁性层，非磁性金属层，固定磁性层和磁畴控制层的磁性膜; 在磁场下对磁性膜进行第一次热处理以提高自由磁性层的磁各向异性; 并且在磁场和比在第二热处理之前的工序中施加的最高温度更高的温度下对磁性膜进行第二次热处理，以将磁化固定在固定磁性层中。 在本发明的另一方面，该方法包括以下步骤：形成包括自由磁性层，非磁性金属层，固定磁性层和磁畴控制层的磁性膜; 对磁性膜进行磁场的第一次热处理，以固定在固定磁性层中的磁化强度; 在磁场下对磁性膜进行第二次热处理，以提高自由磁性层的磁各向异性; 并且在没有外部施加的磁场的情况下对磁性膜进行第三次热处理。

公开(公告)号：US6046892A

公开(公告)日：2000-04-04

申请号：US40048

申请日：1998-03-17

申请人： Kenichi Aoshima ,  Hitoshi Kanai

发明人： Kenichi Aoshima ,  Hitoshi Kanai

IPC分类号： G11B5/39 ,  H01F10/08 ,  H01F10/30 ,  H01F10/32

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B5/3906 ,  H01F10/3268 ,  G11B2005/3996 ,  G11B5/399 ,  H01F10/3295

摘要： A magnetoresistive head includes an underlayer composed of one of Ni and NiFe alloy and at least one additive selected from the group consisting of Cr, Nb, Rh, and Pd. An anti-ferromagnetic layer is formed on the underlayer, and a first ferromagnetic layer is formed on the anti-ferromagnetic layer. The magnetic head also includes a nonmagnetic layer formed on the first ferromagnetic layer, and a second ferromagnetic layer formed on the nonmagnetic layer.

摘要翻译： 磁阻头包括由Ni和NiFe合金中的一种构成的底层和选自Cr，Nb，Rh和Pd的至少一种添加剂。 在底层上形成反铁磁层，在反铁磁层上形成第一铁磁层。 磁头还包括形成在第一铁磁层上的非磁性层和形成在非磁性层上的第二铁磁层。

公开(公告)号：US5978182A

公开(公告)日：1999-11-02

申请号：US971102

申请日：1997-11-14

申请人： Hitoshi Kanai ,  Yoshifumi Mizoshita ,  Junichi Kane ,  Kenichi Aoshima

发明人： Hitoshi Kanai ,  Yoshifumi Mizoshita ,  Junichi Kane ,  Kenichi Aoshima

IPC分类号： G11B5/00 ,  G11B5/39

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/00 ,  G11B5/3903 ,  G11B2005/3996 ,  G11B5/3925 ,  G11B5/3967

摘要： The present invention relates to a magnetoresistive head capable of converting a change in a magnetic field generated by a magnetic recording medium into a change in electric resistivity by utilizing spin valve magnetoresistance effect to read signal information. The magnetoresistive head comprises a first magnetic layer, a second magnetic layer formed on the first magnetic layer through a first nonmagnetic metal layer and magnetized in one direction, a third magnetic layer formed on the second magnetic layer through a second nonmagnetic metal layer, and an electric current supplying layer for applying a constant current to at least the third magnetic layer, the second nonmagnetic metal layer and the second magnetic layer in one of the same direction as and the opposite direction to the direction of magnetization of the second magnetic layer.

摘要翻译： 本发明涉及一种能够通过利用自旋阀磁电阻效应将磁记录介质产生的磁场变化转换为电阻率变化的磁阻头。 磁阻头包括第一磁性层，通过第一非磁性金属层形成在第一磁性层上并在一个方向上被磁化的第二磁性层，通过第二非磁性金属层形成在第二磁性层上的第三磁性层，以及 电流供给层，用于向与第二磁性层的磁化方向相同的方向和与第二磁性层的磁化方向相反的方向中的至少第三磁性层，第二非磁性金属层和第二磁性层施加恒定电流。