公开(公告)号：US5756060A

公开(公告)日：1998-05-26

申请号：US740855

申请日：1996-11-04

申请人： Kenji Otsuka ,  Satoshi Arakawa ,  Youji Nawa

发明人： Kenji Otsuka ,  Satoshi Arakawa ,  Youji Nawa

IPC分类号： B01D53/34 ,  B01D53/68 ,  B01D53/86

CPC分类号： B01D53/68 ,  B01D53/8659

摘要： A process for cleaning a harmful gas which comprises bringing a harmful gas containing a halogen gas and/or a halogen compound gas such as hydrogen fluoride, hydrogen chloride, tungsten hexafluoride, silicon tetrafluoride and boron trifluoride into contact with a cleaning agent comprising metal oxides composed principally of copper (II) oxide and manganese (IV) oxide that are spreadingly and adhesively incorporated with sodium formate so as to remove a harmful component from the harmful gas. According to the cleaning process of the present invention, it is possible to remove harmful components from the harmful gas in extremely high efficiency at ordinary temperature, dispensing with heating or cooling irrespective of the concentration of the harmful components. The cleaning capacity of the cleaning agent is favorably maintained without deterioration even when the harmful gas is in a dry state. Furthermore, the cleaning agent can remove the harmful gas in safety without a fear of causing fire or elimination of the harmful component therefrom. The cleaning process is highly useful and significant in that it is well suited for cleaning exhaust gases from a semiconductor manufacturing process as well as an emergency countermeasure against the leakage of harmful gas from a gas cylinder.

摘要翻译： 一种清洁有害气体的方法，包括使含有卤素气体和/或卤素化合物气体如氟化氢，氯化氢，六氟化钨，四氟化硅和三氟化硼的有害气体与包含金属氧化物的清洗剂接触 主要是氧化铜（II）和氧化锰（IV），它们与甲酸钠扩散并粘合并入，以便从有害气体中除去有害成分。 根据本发明的清洗方法，可以在常温下以非常高的效率从有害气体中除去有害成分，而不管有害成分的浓度如何，分配加热或冷却。 即使当有害气体处于干燥状态时，清洁剂的清洁能力也被有利地保持而不劣化。 此外，清洁剂可以安全地除去有害气体，而不用担心引起火灾或从中消除有害成分。 清洁过程是非常有用和重要的，因为它非常适合于清洁半导体制造过程中的废气以及应对措施，防止来自气瓶的有害气体的泄漏。

公开(公告)号：US06447576B1

公开(公告)日：2002-09-10

申请号：US09671139

申请日：2000-09-28

申请人： Kenji Otsuka ,  Yutaka Amijima ,  Ryuji Hasemi ,  Youji Nawa

发明人： Kenji Otsuka ,  Yutaka Amijima ,  Ryuji Hasemi ,  Youji Nawa

IPC分类号： B01D5302

CPC分类号： B01J20/28057 ,  B01D53/02 ,  B01D53/46 ,  B01D2257/706 ,  B01J20/0237 ,  B01J20/06 ,  C23C16/4412

摘要： A cleaning agent and a cleaning process for cleaning a harmful gas containing, as a harmful component, an organometallic compound represented by the general formula: Rm—M—Hn wherein R is alkyl; M is As, P, S, Se or Te; and m and n are each positive integer satisfying the relation: m+n=valence of M are described. The cleaning agent contains, as an effective component, copper (II) oxide or a mixture of copper (II) oxide and manganese dioxide. The copper (II) oxide has a BET specific surface area of 10 m2/g or greater which is extremely larger than that of copper (II) oxide conventionally used as the effective component of known cleaning agents. With such an extremely large BET specific surface area, the cleaning agent strongly and stably adsorbs the harmful organometallic compound, thereby efficiently cleaning the harmful gas without causing desorption of the adsorbed organometallic compound.

摘要翻译： 一种清洁剂和清洁方法，用于清洗含有由以下通式表示的有机金属化合物作为有害成分的有害气体：其中R是烷基; M为As，P，S，Se或Te; m和n分别为满足关系式的正整数：m + n = M的化合价。 清洁剂含有氧化铜（II）或氧化铜（II）和二氧化锰的混合物作为有效成分。 氧化铜（II）具有10m 2 / g以上的BET比表面积，其比通常用作已知清洁剂的有效成分的铜（II）氧化物的BET比表面积大得多。 通过这样一个非常大的BET比表面积，清洗剂强烈稳定地吸附有害的有机金属化合物，从而有效地清洗有害气体而不引起吸附的有机金属化合物的解吸附。

公开(公告)号：US06638489B2

公开(公告)日：2003-10-28

申请号：US09956808

申请日：2001-09-21

申请人： Kenji Otsuka ,  Yukichi Takamatsu ,  Youji Nawa ,  Kazuaki Tonari

发明人： Kenji Otsuka ,  Yukichi Takamatsu ,  Youji Nawa ,  Kazuaki Tonari

IPC分类号： A62D300

CPC分类号： B01D53/72

摘要： There are disclosed a process for cleaning a harmful gas which comprises bringing the harmful gas containing as a harmful component, an organosilicon compound represented by the general formula: CH2CH—SiR3, CH2CH—Si(OR)3, CH2CHCH2—SiR3 or CH2CHCH2—Si(OR)3, wherein R indicates a saturated hydrocarbon group or an aromatic compound group, into contact with a cleaning agent comprising activated carbon adhesively incorporated with at least one species selected from the group consisting of bromine, iodine, a metal bromide and a metal iodide in which the metal is exemplified by copper, lithium, sodium, potassium, magnesium, calcium, strontium, manganese, iron, cobalt, nickel, zinc, aluminum and tin; and a cleaning agent comprising the same. The cleaning process and the cleaning agent enable to practically clean a harmful gas which is exhausted from a semiconductor manufacturing process and the like by the use of a dry cleaning process.

摘要翻译： 公开了一种清洁有害气体的方法，该方法包括使含有有害成分的有害气体，由通式：CH 2 CH-SiR 3，CH 2 CH-Si（OR）3，CH 2 CHCH 2 -SiR 3或CH 2 CHCH 2 -Si表示的有机硅化合物 （OR）3，其中R表示饱和烃基或芳族化合物基团，与包含活性炭的清洁剂接触，所述活性炭与至少一种选自溴，碘，金属溴化物和金属的物质粘合 碘化物，其中金属以铜，锂，钠，钾，镁，钙，锶，锰，铁，钴，镍，锌，铝和锡为例; 和包含该清洁剂的清洁剂。 清洁处理和清洁剂能够通过使用干洗方法几乎清洁从半导体制造工艺等排出的有害气体。

公开(公告)号：US06960552B2

公开(公告)日：2005-11-01

申请号：US10254665

申请日：2002-09-26

申请人： Kenji Otsuka ,  Youji Nawa ,  Tomohisa Ikeda ,  Koshi Ochi

发明人： Kenji Otsuka ,  Youji Nawa ,  Tomohisa Ikeda ,  Koshi Ochi

IPC分类号： B01D39/06 ,  B01D53/86 ,  B01J21/04 ,  B01J23/10 ,  B01J35/00 ,  B01J23/00 ,  A62D3/00 ,  B01D47/00 ,  B01J23/02 ,  B01J23/08

CPC分类号： B01J23/10 ,  B01D53/86 ,  B01D53/8662 ,  B01D2255/204 ,  B01D2255/206 ,  B01D2255/2092 ,  B01D2257/2066 ,  B01J21/04 ,  B01J35/0006 ,  Y02C20/30

摘要： There are disclosed a decompositionally treating agent for fluorocarbons which comprises an aluminum compound and a lanthanoid compound as effective ingredients; a decompositionally treating agent for fluorocarbons which comprises an aluminum compound, a lanthanoid compound and an alkaline earth metal compound as effective ingredients; and a decompositionally treating method for fluorocarbons which comprises decomposing a fluorocarbon by bringing a fluorocarbon-containing gas into contact under heating with a decompositionally treating agent mentioned above or by bringing the above gas into contact under heating with a decompositionally treating agent comprising aluminum oxide as an effective ingredient and thereafter with a decompositionally treating agent comprising a lanthanoid oxide and an alkaline earth metal oxide. It is made possible by the above agent and method to decompose the fluorocarbons contained in an exhaust gas exhausted from a semiconductor manufacturing industry and the like at a decomposition rate of at least 99.9% at a relatively low decomposition temperature of 1000° C. or lower without deactivating the agent in a short time, or exhausting a corrosive gas such as hydrogen fluoride in the atmosphere.

摘要翻译： 公开了一种碳氟化合物的分解处理剂，其包含铝化合物和镧系化合物作为有效成分; 一种碳氟化合物的分解处理剂，其包含铝化合物，镧系元素化合物和碱土金属化合物作为有效成分; 以及碳氟化合物的分解处理方法，其包括通过在上述分解处理剂的加热下使含碳氟化合物的气体接触而使含碳氟化合物分解，或者通过在加热下将上述气体与包含氧化铝的分解处理剂接触来分解碳氟化合物 然后用含有镧系元素氧化物和碱土金属氧化物的分解处理剂。 通过上述试剂和方法可以在1000℃或更低的相对较低的分解温度下分解从半导体制造业等排出的废气中所含的碳氟化合物的分解速率至少为99.9％ 而不会在短时间内使试剂失活，或在大气中排出诸如氟化氢的腐蚀性气体。

公开(公告)号：US5935540A

公开(公告)日：1999-08-10

申请号：US61976

申请日：1998-04-17

申请人： Kenji Otsuka ,  Youji Nawa

发明人： Kenji Otsuka ,  Youji Nawa

IPC分类号： B01D53/86 ,  B01J8/00 ,  B01D53/54 ,  B01D53/68

CPC分类号： B01D53/8659

摘要： There is disclosed a process for cleaning a harmful gas which comprises bringing a harmful gas containing at least one member selected from the group consisting of nitrogen fluorides, tungsten fluorides, silicon fluorides, hydrogen fluoride and fluorine, especially nitrogen trifluoride into contact with a cleaning agent comprising stannous oxide as an effective ingredient at a temperature of 200.degree. C. at the lowest. The above process makes it possible to clean the harmful gas in a high performance at a relatively low temperature without by-producing a harmful gas or a gas with a fear of causing environmental pollution.

摘要翻译： 公开了一种清洁有害气体的方法，该方法包括将含有选自氮氟化物，氟化钨，氟化硅，氟化氢和氟，特别是三氟化氮中的至少一种的有害气体与清洗剂接触 在200℃的最低温度下，将氧化亚锡作为有效成分。 上述方法使得可以在相对低的温度下高效地清洁有害气体，而不会产生有害气体或担心产生环境污染的气体。

公开(公告)号：US06579509B1

公开(公告)日：2003-06-17

申请号：US09716401

申请日：2000-11-21

申请人： Kenji Otsuka ,  Naoki Muranaga ,  Satoshi Arakawa ,  Tomohisa Ikeda

发明人： Kenji Otsuka ,  Naoki Muranaga ,  Satoshi Arakawa ,  Tomohisa Ikeda

IPC分类号： A62D300

CPC分类号： B01D53/8668 ,  B01D2251/102

摘要： Disclosed is a method for cleaning of the harmful gas, the method comprising mixing harmful gas, discharged from reaction processes using organic metal compounds as the reaction raw materials, with oxygen or air and thereafter bringing the mixture into contact with a catalyst obtained by carrying a noble metal on an inorganic support, a catalyst comprising at least one metal oxide selected from vanadium oxide, chromium oxide, manganese oxide, iron oxide, copper oxide, silver oxide, cobalt oxide and nickel oxide or a catalyst obtained by carrying the metal oxide on an inorganic support, at temperatures between 100° C. and 800° C. to clean the harmful gas. Disclosed also is an apparatus used in the method. The invention ensures that harmful components can be purified in an efficient manner without discharging organic compounds and a large amount of carbon dioxide after the harmful gas is purified, requiring no aftertreatment.

摘要翻译： 公开了一种清洁有害气体的方法，该方法包括将有机金属化合物作为反应原料的反应过程排出的有害气体与氧气或空气混合，然后使混合物与通过携带 在无机载体上的贵金属，包含选自氧化钒，氧化铬，氧化锰，氧化铁，氧化铜，氧化银，氧化钴和氧化镍中的至少一种金属氧化物的催化剂或通过将金属氧化物载带 无机载体，在100℃和800℃之间的温度下，以清洁有害气体。 还公开了一种在该方法中使用的装置。 本发明可确保有害成分在有害气体净化后不会排出有机化合物和大量二氧化碳，而不会有效地进行净化，不需要后处理。

公开(公告)号：US06325841B1

公开(公告)日：2001-12-04

申请号：US09530951

申请日：2000-05-16

申请人： Kenji Otsuka ,  Satoshi Arakawa ,  Ryuji Hasemi ,  Yutaka Amijima ,  Norihiro Suzuki

发明人： Kenji Otsuka ,  Satoshi Arakawa ,  Ryuji Hasemi ,  Yutaka Amijima ,  Norihiro Suzuki

IPC分类号： B01D5304

CPC分类号： B01D53/685 ,  B01J20/04 ,  B01J20/041 ,  B01J20/20 ,  B01J20/223 ,  B01J20/28004 ,  B01J20/2803 ,  B01J20/28066 ,  B01J20/3007 ,  B01J20/3014 ,  B01J20/3042 ,  B01J20/3204 ,  B01J20/3236 ,  B01J2220/42 ,  B01J2220/485 ,  B01J2220/58 ,  Y10S95/901

摘要： A cleaning agent and a cleaning process for efficiently removing noxious halogen-based gases such as fluorine, chlorine, boron trifluoride, boron trichloride and tungsten hexafluoride from exhaust gases from semiconductor fabrication processes. The cleaning agent is produced by adherently adding alkali metal formate and/or alkaline earth metal formate to activated carbon, or adherently adding alkali metal hydroxide and/or alkaline earth metal hydroxide together with alkali metal formate and/or alkaline earth metal formate to activated carbon. By exposing exhaust gases to the cleaning agent, noxious halogen-based gases in the exhaust gases are efficiently removed with little desorption of halogen-based gases adsorbed on the cleaning agent. Also, the cleaning treatment is further improved in safety and efficiency by a pre-treatment cleaning agent comprising a metal oxide or a metal hydroxide and a post-treatment cleaning agent prepared by adherently adding sodium formate to a metal oxide.

摘要翻译： 一种用于从半导体制造工艺的废气有效地除去有害的卤素基气体如氟，氯，三氟化硼，三氯化硼和六氟化钨的清洁剂和清洁方法。 清洁剂是通过将碱金属甲酸盐和/或碱土金属甲酸盐附着在活性炭上，或将碱金属氢氧化物和/或碱土金属氢氧化物与碱金属甲酸盐和/或碱土金属甲酸盐附着在活性炭上而制得的 。 通过将废气暴露于清洁剂中，废气中有害的卤素基气体被有效地去除，吸附在清洁剂上的卤素基气体很少被解吸。 此外，通过包含金属氧化物或金属氢氧化物的预处理清洁剂和通过将金属氧化物附着在甲酸钠中制备的后处理清洁剂进一步提高了清洁处理的安全性和效率。

公开(公告)号：US06261345B1

公开(公告)日：2001-07-17

申请号：US09413899

申请日：1999-10-07

申请人： Yasusada Miyano ,  Kenji Otsuka ,  Satoshi Arakawa

发明人： Yasusada Miyano ,  Kenji Otsuka ,  Satoshi Arakawa

IPC分类号： B01D53047

CPC分类号： B01D53/0423 ,  B01D53/0438 ,  B01D53/0462 ,  B01D2253/102 ,  B01D2253/104 ,  B01D2253/108 ,  B01D2257/406 ,  B01D2258/0216 ,  B01D2259/402

摘要： There are disclosed a process for recovering ammonia which comprises installing a shell and multi-tube adsorber which is equipped with plural adsorption tubes each packed inside with an ammonia adsorbent (e.g. synthetic zeolite) and equipped with a flow mechanism for a heat transfer medium for performing heat exchange through the adsorption tubes, passing an ammonia-containing gas through the adsorption tubes, while cooling the adsorbent with a heat transfer medium (e.g. water) to adsorb the ammonia, and thereafter collecting the adsorbed ammonia through desorption, while heating the adsorbent with a heat transfer medium (e.g. hot water) under reduced pressure; and an apparatus for the above process. The process and apparatus can recover a large amount of ammonia with high purity in high yield in a short period of time and at need in a continuos manner, prevent the deterioration of adsorption performance by forced cooling of the adsorbent, and prevent the lowering of the desorption rate by forced heating of the adsorbent.

摘要翻译： 公开了一种回收氨的方法，该方法包括安装一个壳体和多管吸附器，该吸管器装有多个吸附管，每个吸附管均装在氨吸附剂（如合成沸石）内，并配备有用于传导介质的流动机构 通过吸附管进行热交换，使含氨气体通过吸附管，同时用传热介质（例如水）冷却吸附剂以吸附氨，然后通过解吸收集吸附的氨，同时用 减压下的传热介质（例如热水）; 以及用于上述过程的装置。 该方法和装置可以在短时间内以需要以连续的方式回收大量高纯度的高纯度氨，通过强制冷却吸附剂来防止吸附性能的劣化，并防止 通过强制加热吸附剂的解吸速率。

公开(公告)号：US5589148A

公开(公告)日：1996-12-31

申请号：US518240

申请日：1995-08-23

申请人： Kenji Otsuka ,  Hideki Fukuda ,  Satoshi Arakawa

发明人： Kenji Otsuka ,  Hideki Fukuda ,  Satoshi Arakawa

IPC分类号： B01D53/04 ,  B01D53/28 ,  B01D53/46 ,  B01D53/68 ,  C01B7/07 ,  C01B7/09 ,  C01B7/19

CPC分类号： B01D53/28 ,  B01D53/46 ,  B01D53/68

摘要： There is disclosed a process for purifying a halogen-containing gas (halogen gas such as chlorine, fluorine alone or diluted with an inert gas) which comprises bringing the halogen-containing gas into contact with a purifying agent comprising a hydroxide of an alkaline earth metal such as strontium hydroxide and an iron oxide such as triiron tetraoxide to efficiently remove hydrogen halogenides such as hydrogen chloride and hydrogen fluoride along with moisture that are contained as impurities in the halogen-containing gas. The above process enables the formation of a non-corrosive halogen-containing gas having an extremely high purity and capable of being favorably used as etching gas for silicon films, aluminum alloy films, etc. in a semiconductor manufacturing process.

摘要翻译： 公开了一种纯化含卤气体（单独的卤素气体，单独使用氟或用惰性气体稀释）的方法，其包括使含卤素气体与包含碱土金属氢氧化物的净化剂接触 例如氢氧化锶和氧化铁如四氧化三铁，以有效地除去含卤素气体中作为杂质含有的湿气中的卤化氢如氯化氢和氟化氢。 上述方法能够形成具有极高纯度的非腐蚀性含卤素气体，并能够有利地用作半导体制造工艺中的硅膜，铝合金膜等的蚀刻气体。

公开(公告)号：US5882615A

公开(公告)日：1999-03-16

申请号：US677978

申请日：1996-07-10

申请人： Hideki Fukuda ,  Kenji Otsuka ,  Satoshi Arakawa

发明人： Hideki Fukuda ,  Kenji Otsuka ,  Satoshi Arakawa

IPC分类号： B01D53/68 ,  B01J20/04

CPC分类号： B01D53/68 ,  B01D2251/406

摘要： There are disclosed a cleaning agent for removing a fluorine-compound gas such as hydrogen fluoride, fluorine, tungsten hexafluoride, silicon tetrafluoride and boron trifluoride which agent comprises a molded article produced by using strontium hydroxide as a principal component, an organic binding agent as a molding agent and the hydroxide of an alkaline earth metal other than strontium as a molding aid; and a process for cleaning a harmful gas which comprises feeding a harmful gas containing a fluorine-compound gas into a column packed inside with the above cleaning agent to remove the fluorine-compound gas; and exhausting a gas substantially free from the fluorine-compound gas. The above cleaning agent is capable of removing the fluorine-compound gas in high efficiency without causing any danger, thereby making itself well suited to the cleaning of the gases exhausted, for example, from semiconductor manufacturing industries.

摘要翻译： 公开了一种用于除去氟化氢，氟，六氟化钨，四氟化硅和三氟化硼等氟化合物气体的清洗剂，该清洗剂包括通过使用氢氧化锶作为主要成分制备的模制品，有机粘合剂作为 成型剂和除锶之外的碱土金属的氢氧化物作为模塑助剂; 以及清洗有害气体的方法，包括将含有氟化合物气体的有害气体进料到填充有上述清洗剂的内部的塔中以除去氟化合物气体; 并排出基本上不含氟化合物气体的气体。 上述清洗剂能够高效率地除去氟化合物气体，而不会产生任何危险，从而使其非常适用于例如从半导体制造业排出的气体的清洗。