摘要:
There are disclosed a decompositionally treating agent for fluorocarbons which comprises an aluminum compound and a lanthanoid compound as effective ingredients; a decompositionally treating agent for fluorocarbons which comprises an aluminum compound, a lanthanoid compound and an alkaline earth metal compound as effective ingredients; and a decompositionally treating method for fluorocarbons which comprises decomposing a fluorocarbon by bringing a fluorocarbon-containing gas into contact under heating with a decompositionally treating agent mentioned above or by bringing the above gas into contact under heating with a decompositionally treating agent comprising aluminum oxide as an effective ingredient and thereafter with a decompositionally treating agent comprising a lanthanoid oxide and an alkaline earth metal oxide. It is made possible by the above agent and method to decompose the fluorocarbons contained in an exhaust gas exhausted from a semiconductor manufacturing industry and the like at a decomposition rate of at least 99.9% at a relatively low decomposition temperature of 1000° C. or lower without deactivating the agent in a short time, or exhausting a corrosive gas such as hydrogen fluoride in the atmosphere.
摘要:
A cleaning agent and a cleaning process for cleaning a harmful gas containing, as a harmful component, an organometallic compound represented by the general formula: Rm—M—Hn wherein R is alkyl; M is As, P, S, Se or Te; and m and n are each positive integer satisfying the relation: m+n=valence of M are described. The cleaning agent contains, as an effective component, copper (II) oxide or a mixture of copper (II) oxide and manganese dioxide. The copper (II) oxide has a BET specific surface area of 10 m2/g or greater which is extremely larger than that of copper (II) oxide conventionally used as the effective component of known cleaning agents. With such an extremely large BET specific surface area, the cleaning agent strongly and stably adsorbs the harmful organometallic compound, thereby efficiently cleaning the harmful gas without causing desorption of the adsorbed organometallic compound.
摘要:
There are disclosed a process for cleaning a harmful gas which comprises bringing the harmful gas containing as a harmful component, an organosilicon compound represented by the general formula: CH2CH—SiR3, CH2CH—Si(OR)3, CH2CHCH2—SiR3 or CH2CHCH2—Si(OR)3, wherein R indicates a saturated hydrocarbon group or an aromatic compound group, into contact with a cleaning agent comprising activated carbon adhesively incorporated with at least one species selected from the group consisting of bromine, iodine, a metal bromide and a metal iodide in which the metal is exemplified by copper, lithium, sodium, potassium, magnesium, calcium, strontium, manganese, iron, cobalt, nickel, zinc, aluminum and tin; and a cleaning agent comprising the same. The cleaning process and the cleaning agent enable to practically clean a harmful gas which is exhausted from a semiconductor manufacturing process and the like by the use of a dry cleaning process.
摘要:
A process for cleaning a harmful gas which comprises bringing a harmful gas containing a halogen gas and/or a halogen compound gas such as hydrogen fluoride, hydrogen chloride, tungsten hexafluoride, silicon tetrafluoride and boron trifluoride into contact with a cleaning agent comprising metal oxides composed principally of copper (II) oxide and manganese (IV) oxide that are spreadingly and adhesively incorporated with sodium formate so as to remove a harmful component from the harmful gas. According to the cleaning process of the present invention, it is possible to remove harmful components from the harmful gas in extremely high efficiency at ordinary temperature, dispensing with heating or cooling irrespective of the concentration of the harmful components. The cleaning capacity of the cleaning agent is favorably maintained without deterioration even when the harmful gas is in a dry state. Furthermore, the cleaning agent can remove the harmful gas in safety without a fear of causing fire or elimination of the harmful component therefrom. The cleaning process is highly useful and significant in that it is well suited for cleaning exhaust gases from a semiconductor manufacturing process as well as an emergency countermeasure against the leakage of harmful gas from a gas cylinder.
摘要:
There is disclosed a process for cleaning a harmful gas which comprises bringing a harmful gas containing at least one member selected from the group consisting of nitrogen fluorides, tungsten fluorides, silicon fluorides, hydrogen fluoride and fluorine, especially nitrogen trifluoride into contact with a cleaning agent comprising stannous oxide as an effective ingredient at a temperature of 200.degree. C. at the lowest. The above process makes it possible to clean the harmful gas in a high performance at a relatively low temperature without by-producing a harmful gas or a gas with a fear of causing environmental pollution.
摘要:
Disclosed is a method for cleaning of the harmful gas, the method comprising mixing harmful gas, discharged from reaction processes using organic metal compounds as the reaction raw materials, with oxygen or air and thereafter bringing the mixture into contact with a catalyst obtained by carrying a noble metal on an inorganic support, a catalyst comprising at least one metal oxide selected from vanadium oxide, chromium oxide, manganese oxide, iron oxide, copper oxide, silver oxide, cobalt oxide and nickel oxide or a catalyst obtained by carrying the metal oxide on an inorganic support, at temperatures between 100° C. and 800° C. to clean the harmful gas. Disclosed also is an apparatus used in the method. The invention ensures that harmful components can be purified in an efficient manner without discharging organic compounds and a large amount of carbon dioxide after the harmful gas is purified, requiring no aftertreatment.
摘要:
There are disclosed a process for purifying ammonia which comprises bringing crude ammonia into contact with a catalyst comprising manganese oxide as an effective ingredient to remove oxygen and/or carbon dioxide that are contained as impurities in the ammonia, and a process for purifying ammonia which comprises bringing crude ammonia into contact with a catalyst comprising manganese oxide as an effective ingredient, and thereafter with a synthetic zeolite having a pore diameter in the range of 4 to 10 Å to remove at least one impurity selected from the group consisting of oxygen, carbon dioxide and moisture that are contained in the crude ammonia. It is made possible by the above process to remove impurities to an extremely low concentration from crude ammonia available on the market for industrial use and crude ammonia from a gallium nitride compound semi-conductor without decomposition of ammonia to generate hydrogen.
摘要:
In a liquid crystal display device, gate lines and common lines are first concurrently formed, and after an interlayer film is formed, a pixel electrode, common electrodes, and source lines are formed at the same time. By this, a electrode pattern can be made simple and manufacturing steps are simplified. Further, wiring lines and electrode disposed in the layer closest to a liquid crystal layer are made the pixel electrode, common electrodes and source lines, and the shapes thereof are made simple.
摘要:
Provided are a method of efficient separation/purification of hydrogen from a hydrogen-containing gas that contains, in addition to hydrogen, at least one component of water, carbon monoxide, carbon dioxide, methane and nitrogen in an amount of at least 1% where the hydrogen permeability is kept high; a hydrogen separation membrane for use in the method; and a hydrogen purification apparatus.The hydrogen purification method for separation/purification of hydrogen from a hydrogen-containing gas that contains at least one component of water, carbon monoxide, carbon dioxide, methane and nitrogen in an amount of at least 1% is characterized by using a hydrogen separation membrane produced by adhering fine particles of palladium to the surface of a palladium alloy membrane; the hydrogen separation membrane is for use for the method; and the hydrogen purification apparatus comprises the membrane.
摘要:
It is an object of the present invention to prevent recurrence of an overload condition after occurrence of the overload condition, thereby improving operability and safety in a drilling device. A motor 12 for rotating a drill is connected to an AC power source 10 through a motor control unit 28, a current detector 30, and a power switch 36. A magnet 16 is also connected to the AC power source 10 through the power switch 36 and a full-wave rectifier 18. The motor control unit 28 rotationally drives the motor on the basis of a signal sent from a main control unit according to a state in which a motor start switch 38 is on. The main control unit 14 controls the motor control unit 28 to gradually reduce a supply voltage to the motor 12 when the motor 12 becomes overloaded, to gradually increase the voltage to the normal power supply condition when the overload condition is vanished, and to stop power supply to the motor 12 if the overload condition continues for a predetermined period.