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    Method and system for logic design for cell projection particle beam lithography
    1.
    发明授权
    Method and system for logic design for cell projection particle beam lithography 失效
    用于单元投影粒子束光刻的逻辑设计方法和系统

    公开(公告)号：US07579606B2

    公开(公告)日：2009-08-25

    申请号：US11607305

    申请日：2006-12-01

    申请人： Kenji Yoshida ,  Takashi Mitsuhashi ,  Shohei Matsushita ,  Akira Fujimura

    发明人： Kenji Yoshida ,  Takashi Mitsuhashi ,  Shohei Matsushita ,  Akira Fujimura

    IPC分类号： G21K5/04 ,  G06F17/50

    CPC分类号： H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/20

    摘要： A method for particle beam lithography, such as electron beam (EB) lithography, includes predefining a stencil design having a plurality of cell patterns with information from a cell library, fabricating the stencil design, synthesizing a functional description into a logic circuit design after predefining the stencil design so that one or more characteristics of the stencil design are considered during synthesizing of the functional description into the logic circuit design, optimizing the logic circuit design, generating a layout design from the optimized logic circuit design, and forming the logic circuit on a substrate according to the stencil design and the layout design.

    摘要翻译： 用于粒子束光刻的方法，例如电子束（EB）光刻，包括预定义具有多个单元图案的模板设计，其具有来自单元库的信息，制造模板设计，在预定义之后将功能描述合成为逻辑电路设计 模板设计使得在将逻辑电路设计中的功能描述合成期间考虑模板设计的一个或多个特性，优化逻辑电路设计，从优化的逻辑电路设计生成布局设计，并且形成逻辑电路 根据模板设计和布局设计的基材。

    Method and system for logic design for cell projection particle beam lithography
    3.
    发明申请
    Method and system for logic design for cell projection particle beam lithography 失效
    用于单元投影粒子束光刻的逻辑设计方法和系统

    公开(公告)号：US20080128637A1

    公开(公告)日：2008-06-05

    申请号：US11607305

    申请日：2006-12-01

    申请人： Kenji Yoshida ,  Takashi Mitsuhashi ,  Shohei Matsushita ,  Akira Fujimura

    发明人： Kenji Yoshida ,  Takashi Mitsuhashi ,  Shohei Matsushita ,  Akira Fujimura

    IPC分类号： G21K5/04

    CPC分类号： H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/20

    摘要： A method for particle beam lithography, such as electron beam (EB) lithography, includes predefining a stencil design having a plurality of cell patterns with information from a cell library, fabricating the stencil design, synthesizing a functional description into a logic circuit design after predefining the stencil design so that one or more characteristics of the stencil design are considered during synthesizing of the functional description into the logic circuit design, optimizing the logic circuit design, generating a layout design from the optimized logic circuit design, and forming the logic circuit on a substrate according to the stencil design and the layout design.

    摘要翻译： 用于粒子束光刻的方法，例如电子束（EB）光刻，包括预定义具有多个单元图案的模板设计，其具有来自单元库的信息，制造模板设计，在预定义之后将功能描述合成为逻辑电路设计 模板设计使得在将逻辑电路设计中的功能描述合成期间考虑模板设计的一个或多个特性，优化逻辑电路设计，从优化的逻辑电路设计生成布局设计，并且形成逻辑电路 根据模板设计和布局设计的基材。

    Cell projection charged particle beam lithography
    4.
    发明授权
    Cell projection charged particle beam lithography 有权
    模板设计和改善单元投影带电粒子束光刻的字符密度的方法

    公开(公告)号：US08426832B2

    公开(公告)日：2013-04-23

    申请号：US12552373

    申请日：2009-09-02

    申请人： Kenji Yoshida ,  Takashi Mitsuhashi ,  Shohei Matsushita ,  Larry Lam Chau ,  Tam Dinh Thanh Nguyen ,  Donald MacMillen ,  Akira Fujimura

    发明人： Kenji Yoshida ,  Takashi Mitsuhashi ,  Shohei Matsushita ,  Larry Lam Chau ,  Tam Dinh Thanh Nguyen ,  Donald MacMillen ,  Akira Fujimura

    IPC分类号： G03F1/00

    CPC分类号： G03F1/20 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3174

    摘要： The present invention increases the number of characters available on a stencil for charged particle beam lithography. A stencil for charged particle beam lithography is disclosed, comprising two character projection (CP) characters, wherein the blanking areas for the two CP characters overlap. A stencil is also disclosed comprising two CP characters with one or more optional characters between the two characters, wherein the optional characters can form meaningful patterns on a surface only in combination with one of the two characters. A stencil is also disclosed wherein the blanking area of a CP character extends beyond the boundary of the stencil's available character area. Methods for design of the aforementioned stencils are also disclosed.

    摘要翻译： 本发明增加了用于带电粒子束光刻的模板上可用的字符数。 公开了一种用于带电粒子束光刻的模板，包括两个字符投影（CP）字符，其中两个CP字符的消隐区域重叠。 还公开了一种模板，其包括在两个字符之间具有一个或多个可选字符的两个CP字符，其中可选字符可以仅在两个字符中的一个组合上在表面上形成有意义的图案。 还公开了一种模板，其中CP字符的消隐区域延伸超出模版的可用字符区域的边界。 还公开了上述模板的设计方法。

    Method and system for improving particle beam lithography
    7.
    发明授权
    Method and system for improving particle beam lithography 有权
    改进粒子束光刻的方法和系统

    公开(公告)号：US07897522B2

    公开(公告)日：2011-03-01

    申请号：US11603603

    申请日：2006-11-21

    申请人： Akira Fujimura ,  James Fong ,  Takashi Mitsuhashi ,  Shohei Matsushita

    发明人： Akira Fujimura ,  James Fong ,  Takashi Mitsuhashi ,  Shohei Matsushita

    IPC分类号： H01L21/00

    CPC分类号： H01J37/3174 ,  B82Y10/00 ,  B82Y40/00

    摘要： A method for particle beam lithography, such as electron beam (EB) lithography, includes forming a plurality of cell patterns on a stencil mask and shaping one or more of the cell patterns with a polygonal-shaped contour. A first polygonal-shaped cell pattern is exposed to a particle beam so as to project the first polygonal-shaped cell pattern on a substrate. A second polygonal-shaped cell pattern, having a contour that mates with the contour of the first polygonal-shaped cell pattern, is exposed to the particle beam, such as an electron beam, so as to project the second polygonal-shaped cell pattern adjacent to the first polygonal-shaped cell pattern to thereby form a combined cell with the contour of the first polygonal-shaped cell pattern mated to the contour of the second polygonal-shaped cell pattern. The polygonal-shaped contour of the first and second cell patterns may comprise a rectilinear-shaped contour.

    摘要翻译： 用于粒子束光刻的方法，例如电子束（EB）光刻，包括在模板掩模上形成多个单元图案并且以多边形轮廓对一个或多个单元图案进行成型。 将第一多边形形状的单元图案暴露于粒子束，以将第一多边形单元图案投影到基板上。 具有与第一多边形形状的单元图案的轮廓相匹配的轮廓的第二多边形形状的单元图案被暴露于诸如电子束的粒子束，以便将第二多边形单元图案相邻地突出 到第一多边形形状的单元图案，从而形成与第二多边形形状的单元图案的轮廓相配合的第一多边形单元图案的轮廓的组合单元。 第一和第二单元图案的多边形轮廓可以包括直线形轮廓。

    Method and system for improving particle beam lithography
    8.
    发明申请
    Method and system for improving particle beam lithography 有权
    改进粒子束光刻的方法和系统

    公开(公告)号：US20080116399A1

    公开(公告)日：2008-05-22

    申请号：US11603603

    申请日：2006-11-21

    申请人： Akira Fujimura ,  James Fong ,  Takashi Mitsuhashi ,  Shohei Matsushita

    发明人： Akira Fujimura ,  James Fong ,  Takashi Mitsuhashi ,  Shohei Matsushita

    IPC分类号： G21K5/00

    CPC分类号： H01J37/3174 ,  B82Y10/00 ,  B82Y40/00

    摘要： A method for particle beam lithography, such as electron beam (EB) lithography, includes forming a plurality of cell patterns on a stencil mask and shaping one or more of the cell patterns with a polygonal-shaped contour. A first polygonal-shaped cell pattern is exposed to a particle beam so as to project the first polygonal-shaped cell pattern on a substrate. A second polygonal-shaped cell pattern, having a contour that mates with the contour of the first polygonal-shaped cell pattern, is exposed to the particle beam, such as an electron beam, so as to project the second polygonal-shaped cell pattern adjacent to the first polygonal-shaped cell pattern to thereby form a combined cell with the contour of the first polygonal-shaped cell pattern mated to the contour of the second polygonal-shaped cell pattern. The polygonal-shaped contour of the first and second cell patterns may comprise a rectilinear-shaped contour.

    摘要翻译： 用于粒子束光刻的方法，例如电子束（EB）光刻，包括在模板掩模上形成多个单元图案并且以多边形轮廓对一个或多个单元图案进行成型。 将第一多边形形状的单元图案暴露于粒子束，以将第一多边形单元图案投影到基板上。 具有与第一多边形形状的单元图案的轮廓相匹配的轮廓的第二多边形形状的单元图案被暴露于诸如电子束的粒子束，以便将第二多边形单元图案相邻地突出 到第一多边形形状的单元图案，从而形成与第二多边形形状的单元图案的轮廓相配合的第一多边形单元图案的轮廓的组合单元。 第一和第二单元图案的多边形轮廓可以包括直线形轮廓。