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    THIN-FILM PIEZOELECTRIC DEVICE, PRODUCTION METHOD THEREOF, HEAD GIMBALS ASSEMBLY USING THE THIN-FILM PIEZOELECTRIC DEVICE, AND HARD DISK DRIVE USING THE HEAD GIMBALS ASSEMBLY
    1.
    发明申请
    THIN-FILM PIEZOELECTRIC DEVICE, PRODUCTION METHOD THEREOF, HEAD GIMBALS ASSEMBLY USING THE THIN-FILM PIEZOELECTRIC DEVICE, AND HARD DISK DRIVE USING THE HEAD GIMBALS ASSEMBLY 有权
    薄膜压电器件，其制造方法，使用薄膜压电器件的头元件组件和使用头部金属组件的硬盘驱动器

    公开(公告)号：US20100097723A1

    公开(公告)日：2010-04-22

    申请号：US12579766

    申请日：2009-10-15

    申请人： Kenjiro HATA ,  Hirofumi SASAKI ,  Katsuyuki KURACHI

    发明人： Kenjiro HATA ,  Hirofumi SASAKI ,  Katsuyuki KURACHI

    IPC分类号： G11B5/48 ,  H01L41/22 ,  H01L41/04

    CPC分类号： G11B5/4826 ,  G11B5/4833 ,  G11B5/4873 ,  G11B5/5552 ,  H01L41/0986 ,  H01L41/1876 ,  H01L41/316 ,  H01L41/319 ,  Y10T29/42

    摘要： A method includes a step of stacking a first electrode layer, a piezoelectric layer, and a second electrode layer on a first substrate to form a first laminate; a step of stacking a support layer on a second substrate to form a second laminate; a step of bonding the first and second laminates through an adhesive layer to form a third laminate; a step of removing the first substrate from the third laminate; a step of processing the third laminate in a desired shape; and a step of removing the second substrate. A Young's modulus of the adhesive layer is smaller than a Young's modulus of the piezoelectric layer. Respective Young's moduli of the second electrode layer and the support layer are larger than the Young's modulus of the adhesive layer. The third laminate has no other piezoelectric layer except for the aforementioned piezoelectric layer.

    摘要翻译： 一种方法包括在第一基板上堆叠第一电极层，压电层和第二电极层以形成第一层压体的步骤; 在第二基板上堆叠支撑层以形成第二层压体的步骤; 通过粘合剂层将第一和第二层压体接合以形成第三层压体的步骤; 从第三层压体去除第一基板的步骤; 处理所需形状的第三层压体的步骤; 以及去除第二基板的步骤。 粘合剂层的杨氏模量小于压电层的杨氏模量。 第二电极层和支撑层的相应杨氏模量大于粘合剂层的杨氏模量。 第三层压体除了上述压电层之外没有其他压电层。

    METHOD FOR MANUFACTURING PIEZOELECTRIC ELEMENT
    2.
    发明申请
    METHOD FOR MANUFACTURING PIEZOELECTRIC ELEMENT 有权
    制造压电元件的方法

    公开(公告)号：US20100147789A1

    公开(公告)日：2010-06-17

    申请号：US12617337

    申请日：2009-11-12

    申请人： Katsuyuki KURACHI ,  Hirofumi SASAKI

    发明人： Katsuyuki KURACHI ,  Hirofumi SASAKI

    IPC分类号： B44C1/22

    CPC分类号： H01L41/332 ,  H01L41/313

    摘要： A manufacturing method of the present invention comprises the step of epitaxially growing a PZT layer on a first electrode layer, and the step of processing the PZT layer to a desired shape using an etching solution after the growing step. The etching solution contains at least one acid from among hydrochloric acid and nitric acid in a concentration CHCl+3.3CHNO3 ranging from 1 wt % to 10 wt %, CHCl and CHNO3 denoting, respectively, a weight concentration of the hydrochloric acid and nitric acid relative to a weight of the etching solution; and at least one fluorine compound from among ammonium fluoride and hydrogen fluoride, such that a weight concentration of fluorine derived from ammonium fluoride and hydrogen fluoride ranges from 0.1 wt % to 1 wt % relative to the weight of the etching solution.

    摘要翻译： 本发明的制造方法包括在第一电极层上外延生长PZT层的步骤，以及在生长步骤之后使用蚀刻溶液将PZT层加工成所需形状的步骤。 蚀刻溶液含有盐酸和硝酸中至少一种浓度为1重量％至10重量％CHCl + 3.3CHNO 3的酸，CHCl和CHNO 3分别表示盐酸和硝酸的相对重量浓度 达到蚀刻溶液的重量; 和来自氟化铵和氟化氢的至少一种氟化合物，使得源自氟化铵和氟化氢的氟的重量浓度相对于蚀刻溶液的重量为0.1重量％至1重量％。

    PIEZOELECTRIC DEVICE
    5.
    发明申请
    PIEZOELECTRIC DEVICE 有权
    压电器件

    公开(公告)号：US20140035439A1

    公开(公告)日：2014-02-06

    申请号：US13566468

    申请日：2012-08-03

    申请人： Katsuyuki KURACHI ,  Yasuhiro AIDA ,  Hitoshi SAKUMA ,  Kazuhiko MAEJIMA

    发明人： Katsuyuki KURACHI ,  Yasuhiro AIDA ,  Hitoshi SAKUMA ,  Kazuhiko MAEJIMA

    IPC分类号： H01L41/047

    CPC分类号： H01L41/0478 ,  B41J2/14233 ,  H01L41/0477 ,  H01L41/0815 ,  H01L41/1873 ,  H01L41/313 ,  H01L41/316

    摘要： A piezoelectric device according to the present invention is provided with a first electrode film, a first nonmetal electroconductive intermediate film provided on the first electrode film, a piezoelectric film provided on the first nonmetal electroconductive intermediate film, a second nonmetal electroconductive intermediate film provided on the piezoelectric film, and a second electrode film provided on the second nonmetal electroconductive intermediate film. A linear expansion coefficient of the first nonmetal electroconductive intermediate film is larger than those of the first electrode film and the piezoelectric film, and a linear expansion coefficient of the second nonmetal electroconductive intermediate film is larger than those of the second electrode film and the piezoelectric film.

    摘要翻译： 根据本发明的压电装置设置有第一电极膜，设置在第一电极膜上的第一非金属导电中间膜，设置在第一非金属导电中间膜上的压电膜，设置在第一非金属导电中间膜上的第二非金属导电中间膜 压电膜，以及设置在第二非金属导电中间膜上的第二电极膜。 第一非金属导电性中间膜的线膨胀系数比第一电极膜和压电膜的线膨胀系数大，第二非金属导电性中间膜的线膨胀系数比第二电极膜和压电膜的线膨胀系数大 。