公开(公告)号：US20100022098A1

公开(公告)日：2010-01-28

申请号：US12503599

申请日：2009-07-15

申请人： Kentaro MATSUNAGA ,  Shinichi ITO

发明人： Kentaro MATSUNAGA ,  Shinichi ITO

IPC分类号： H01L21/31

CPC分类号： H01L21/306 ,  H01L21/0273 ,  H01L21/0338 ,  H01L21/3105 ,  H01L21/316 ,  H01L21/3185

摘要： A method for manufacturing a semiconductor device includes: performing modifying a surface of a semiconductor wafer including a silanol group on the surface with an alkylsilyl group; and fluorinating an alkyl group of the alkylsilyl group with which the surface was modified.

摘要翻译： 半导体器件的制造方法包括：用烷基甲硅烷基改性表面上含有硅烷醇基的半导体晶片的表面; 并氟化表面被修饰的烷基甲硅烷基的烷基。

公开(公告)号：US20080078427A1

公开(公告)日：2008-04-03

申请号：US11865901

申请日：2007-10-02

申请人： Kentaro MATSUNAGA

发明人： Kentaro MATSUNAGA

IPC分类号： B08B3/02 ,  B08B3/00

CPC分类号： B08B3/024 ,  H01L21/67051

摘要： According to an aspect of the invention, there is provided a substrate cleaning method of discharging cleaning liquid from a nozzle above a processing target substrate to clean the substrate while rotating the substrate such that the nozzle is scanned from the center of the substrate toward an outside of the substrate while discharging the cleaning liquid from the nozzle toward the substrate to scatter the cleaning liquid toward the outside of the substrate, comprising controlling a flow rate of the cleaning liquid, a rotational speed of the substrate, a scan speed of the nozzle, and a scan start position of the nozzle such that the cleaning liquid discharged from the nozzle does not impinge on the old cleaning liquid remaining on the substrate when the cleaning liquid discharged from the nozzle contacts a surface of the substrate.

摘要翻译： 根据本发明的一个方面，提供了一种基板清洗方法，从处理对象基板上方的喷嘴排出清洗液体，同时旋转基板以清洁基板，使得喷嘴从基板的中心朝向外部扫描 在将清洗液从喷嘴朝向基板排出的同时，将清洗液朝向基板的外侧分散，包括控制清洗液的流量，基板的旋转速度，喷嘴的扫描速度， 以及喷嘴的扫描开始位置，使得当从喷嘴排出的清洁液体接触到基板的表面时，从喷嘴排出的清洗液体不会侵入残留在基板上的旧的清洁液体。

公开(公告)号：US20090115978A1

公开(公告)日：2009-05-07

申请号：US12261596

申请日：2008-10-30

申请人： Kentaro MATSUNAGA ,  Daisuke Kawamura ,  Seiro Miyoshi ,  Eishi Shiobara

发明人： Kentaro MATSUNAGA ,  Daisuke Kawamura ,  Seiro Miyoshi ,  Eishi Shiobara

IPC分类号： G03F7/38

CPC分类号： G03F7/16

摘要： A method for treating a substrate before exposing the substrate to which a resist is applied, includes, rinsing the substrate to which a resist is applied, and holding the rinsed substrate in an atmosphere. The atmosphere substantially contains no moisture until conveying the substrate to an exposure apparatus.

摘要翻译： 在曝光施加有抗蚀剂的基板之前处理基板的方法包括：冲洗施加有抗蚀剂的基板，并将漂洗的基板保持在气氛中。 气氛基本上不含湿气，直到将基板输送到曝光装置。

公开(公告)号：US20110034029A1

公开(公告)日：2011-02-10

申请号：US12849599

申请日：2010-08-03

申请人： Kentaro MATSUNAGA ,  Tomoya Oori ,  Eishi Shiobara ,  Yukiko Sato ,  Yoshihisa Kawamura

发明人： Kentaro MATSUNAGA ,  Tomoya Oori ,  Eishi Shiobara ,  Yukiko Sato ,  Yoshihisa Kawamura

IPC分类号： H01L21/306

CPC分类号： H01L21/0337 ,  B81C1/00031 ,  B81C2201/0149

摘要： According to one embodiment, a pattern formation method is disclosed. The method includes forming a plurality of regions on a foundation and the plurality of the regions correspond to different pattern sizes. The method includes separating each of a plurality of block copolymers from another one of the plurality of the block copolymers and segregating the each of the plurality of the block copolymers into a corresponding one of the regions. The method includes performing a phase separation of the each of the block copolymers of each of the regions. The method includes selectively removing a designated phase of each of the phase-separated block copolymers to form a pattern of the each of the block copolymers and the pattern has a different pattern size for the each of the regions.

摘要翻译： 根据一个实施例，公开了图案形成方法。 该方法包括在基础上形成多个区域，并且多个区域对应于不同的图案尺寸。 该方法包括从多个嵌段共聚物中的另一个嵌段共聚物中分离多个嵌段共聚物，并将多个嵌段共聚物中的每一个分离成相应的一个区域。 该方法包括进行每个区域的每个嵌段共聚物的相分离。 该方法包括选择性地除去每个相分离的嵌段共聚物的指定相以形成每个嵌段共聚物的图案，并且该图案对于每个区域具有不同的图案尺寸。

公开(公告)号：US20100183982A1

公开(公告)日：2010-07-22

申请号：US12689830

申请日：2010-01-19

申请人： Kentaro MATSUNAGA ,  Tomoya Oori ,  Eishi Shiobara

发明人： Kentaro MATSUNAGA ,  Tomoya Oori ,  Eishi Shiobara

IPC分类号： G03F7/20

CPC分类号： G03F7/0035 ,  G03F7/40 ,  H01L21/0273 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31144 ,  H01L27/11517 ,  H01L27/11521

摘要： A method of fabricating a semiconductor device according to an embodiment includes: forming a first resist pattern made of a first resist material on a workpiece material; irradiating an energy beam onto the first resist pattern, the energy beam exposing the first resist material to light; performing a treatment for improving resistance the first resist pattern after irradiation of the energy beam; forming a coating film on the workpiece material so as to cover the first resist pattern; and forming a second resist pattern made of a second resist material on the coating film after the treatment.

摘要翻译： 根据实施例的制造半导体器件的方法包括：在工件材料上形成由第一抗蚀剂材料制成的第一抗蚀剂图案; 将能量束照射到所述第一抗蚀剂图案上，所述能量束将所述第一抗蚀剂材料暴露于光; 进行能量束照射后的第一抗蚀剂图案的改善电阻的处理; 在所述工件材料上形成涂覆膜以覆盖所述第一抗蚀剂图案; 以及在处理后在涂膜上形成由第二抗蚀剂材料制成的第二抗蚀剂图案。