公开(公告)号：US07973907B2

公开(公告)日：2011-07-05

申请号：US12261596

申请日：2008-10-30

申请人： Kentaro Matsunaga ,  Daisuke Kawamura ,  Seiro Miyoshi ,  Eishi Shiobara

发明人： Kentaro Matsunaga ,  Daisuke Kawamura ,  Seiro Miyoshi ,  Eishi Shiobara

IPC分类号： G03B27/52

CPC分类号： G03F7/16

摘要： A method for treating a substrate before exposing the substrate to which a resist is applied, includes, rinsing the substrate to which a resist is applied, and holding the rinsed substrate in an atmosphere. The atmosphere substantially contains no moisture until conveying the substrate to an exposure apparatus.

摘要翻译： 在曝光施加有抗蚀剂的基板之前处理基板的方法包括：冲洗施加有抗蚀剂的基板，并将漂洗的基板保持在气氛中。 气氛基本上不含湿气，直到将基板输送到曝光装置。

公开(公告)号：US20090115978A1

公开(公告)日：2009-05-07

申请号：US12261596

申请日：2008-10-30

申请人： Kentaro MATSUNAGA ,  Daisuke Kawamura ,  Seiro Miyoshi ,  Eishi Shiobara

发明人： Kentaro MATSUNAGA ,  Daisuke Kawamura ,  Seiro Miyoshi ,  Eishi Shiobara

IPC分类号： G03F7/38

CPC分类号： G03F7/16

摘要： A method for treating a substrate before exposing the substrate to which a resist is applied, includes, rinsing the substrate to which a resist is applied, and holding the rinsed substrate in an atmosphere. The atmosphere substantially contains no moisture until conveying the substrate to an exposure apparatus.

摘要翻译： 在曝光施加有抗蚀剂的基板之前处理基板的方法包括：冲洗施加有抗蚀剂的基板，并将漂洗的基板保持在气氛中。 气氛基本上不含湿气，直到将基板输送到曝光装置。

公开(公告)号：US20090226624A1

公开(公告)日：2009-09-10

申请号：US12466525

申请日：2009-05-15

申请人： Eishi Shiobara ,  Hirokazu Kato ,  Seiro Miyoshi ,  Shinichi Ito

发明人： Eishi Shiobara ,  Hirokazu Kato ,  Seiro Miyoshi ,  Shinichi Ito

IPC分类号： B05D1/02 ,  B05B7/00 ,  B05B13/04 ,  B05C5/00 ,  B05B15/02

CPC分类号： H01L21/67253 ,  H01L21/67051 ,  H01L21/6715

摘要： A substrate-processing apparatus includes a sample table which mounts thereon a to-be-processed substrate, a first line which supplies a chemical solution, a second line which supplies a cleaning liquid, a three-way valve connected to the first and second lines and configured to select one of the first and second lines, a filter provided across the first line upstream of the three-way valve, and configured to eliminate a foreign material from the chemical solution, and a nozzle provided downstream of the three-way valve and configured to discharge the chemical solution or the cleaning liquid when the first or second line is selected via the three-way valve. The three-way valve selects the first line when the substrate is coated with the chemical solution, and selects the second line in other cases.

摘要翻译： 基板处理装置包括安装在被处理基板上的样品台，供给化学溶液的第一管线，供给清洗液的第二管线，与第一管路和第二管路连接的三通阀 并且构造成选择第一和第二管线中的一个，设置在三通阀上游的第一线上的过滤器，并且被配置为从化学溶液中除去异物，以及设置在三通阀下游的喷嘴 并且构造成当通过三通阀选择第一或第二管线时，排出化学溶液或清洗液体。 当基材涂有化学溶液时，三通阀选择第一行，在其他情况下选择第二行。

公开(公告)号：US20070266936A1

公开(公告)日：2007-11-22

申请号：US11798132

申请日：2007-05-10

申请人： Eishi Shiobara ,  Hirokazu Kato ,  Seiro Miyoshi ,  Shinichi Ito

发明人： Eishi Shiobara ,  Hirokazu Kato ,  Seiro Miyoshi ,  Shinichi Ito

IPC分类号： B05C11/02

CPC分类号： H01L21/67253 ,  H01L21/67051 ,  H01L21/6715

摘要： A substrate-processing apparatus includes a sample table which mounts thereon a to-be-processed substrate, a first line which supplies a chemical solution, a second line which supplies a cleaning liquid, a three-way valve connected to the first and second lines and configured to select one of the first and second lines, a filter provided across the first line upstream of the three-way valve, and configured to eliminate a foreign material from the chemical solution, and a nozzle provided downstream of the three-way valve and configured to discharge the chemical solution or the cleaning liquid when the first or second line is selected via the three-way valve. The three-way valve selects the first line when the substrate is coated with the chemical solution, and selects the second line in other cases.

摘要翻译： 基板处理装置包括安装在被处理基板上的样品台，供给化学溶液的第一管线，供给清洗液的第二管线，与第一管路和第二管路连接的三通阀 并且构造成选择第一和第二管线中的一个，设置在三通阀上游的第一线上的过滤器，并且被配置为从化学溶液中除去异物，以及设置在三通阀下游的喷嘴 并且构造成当通过三通阀选择第一或第二管线时，排出化学溶液或清洗液体。 当基材涂有化学溶液时，三通阀选择第一行，在其他情况下选择第二行。

公开(公告)号：US07779777B2

公开(公告)日：2010-08-24

申请号：US12466525

申请日：2009-05-15

申请人： Eishi Shiobara ,  Hirokazu Kato ,  Seiro Miyoshi ,  Shinichi Ito

发明人： Eishi Shiobara ,  Hirokazu Kato ,  Seiro Miyoshi ,  Shinichi Ito

IPC分类号： B05B15/02 ,  B05B3/00 ,  B05B1/28 ,  B05B13/02

CPC分类号： H01L21/67253 ,  H01L21/67051 ,  H01L21/6715

摘要： A substrate-processing apparatus includes a sample table which mounts thereon a to-be-processed substrate, a first line which supplies a chemical solution, a second line which supplies a cleaning liquid, a three-way valve connected to the first and second lines and configured to select one of the first and second lines, a filter provided across the first line upstream of the three-way valve, and configured to eliminate a foreign material from the chemical solution, and a nozzle provided downstream of the three-way valve and configured to discharge the chemical solution or the cleaning liquid when the first or second line is selected via the three-way valve. The three-way valve selects the first line when the substrate is coated with the chemical solution, and selects the second line in other cases.

摘要翻译： 基板处理装置包括安装在被处理基板上的样品台，供给化学溶液的第一管线，供给清洗液的第二管线，与第一管路和第二管路连接的三通阀 并且构造成选择第一和第二管线中的一个，设置在三通阀上游的第一线上的过滤器，并且被配置为从化学溶液中除去异物，以及设置在三通阀下游的喷嘴 并且构造成当通过三通阀选择第一或第二管线时，排出化学溶液或清洗液体。 当基材涂有化学溶液时，三通阀选择第一行，在其他情况下选择第二行。

公开(公告)号：US06270948B1

公开(公告)日：2001-08-07

申请号：US09327223

申请日：1999-06-07

申请人： Yasuhiko Sato ,  Yoshihiko Nakano ,  Rikako Kani ,  Shuji Hayase ,  Yasunobu Onishi ,  Eishi Shiobara ,  Seiro Miyoshi ,  Hideto Matsuyama ,  Masaki Narita ,  Sawako Yoshikawa

发明人： Yasuhiko Sato ,  Yoshihiko Nakano ,  Rikako Kani ,  Shuji Hayase ,  Yasunobu Onishi ,  Eishi Shiobara ,  Seiro Miyoshi ,  Hideto Matsuyama ,  Masaki Narita ,  Sawako Yoshikawa

IPC分类号： G03F700

CPC分类号： G03F7/094 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02282 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/3121

摘要： A method of forming a pattern which comprises the steps of, forming an organosilicon film on a work film, the organosilicon film comprising an organosilicon compound having a silicon-silicon bond in a backbone chain thereof and a glass transition temperature of 0° C. or more, forming a resist pattern on the organosilicon film, and transcribing the resist pattern on the organosilicon film through an etching of the organosilicon film by making use of an etching gas containing at least one kind of atom selected from the group consisting of chlorine, bromine and iodine. The organosilicon pattern obtained by the etching is employed as a mask for patterning the work film.

摘要翻译： 一种形成图案的方法，包括以下步骤：在工作薄膜上形成有机硅膜，所述有机硅膜包含其主链中具有硅 - 硅键的有机硅化合物和玻璃化转变温度为0℃，或 在有机硅膜上形成抗蚀剂图案，通过利用含有选自氯，溴中的至少一种原子的蚀刻气体，通过蚀刻有机硅膜来转印有机硅膜上的抗蚀剂图案 和碘。 采用通过蚀刻获得的有机硅图案用作对工作膜进行图案化的掩模。

公开(公告)号：US20110012297A1

公开(公告)日：2011-01-20

申请号：US12718778

申请日：2010-03-05

申请人： Ayumi KOBIKI ,  Takeshi Koshiba ,  Hidefumi Mukai ,  Seiro Miyoshi

发明人： Ayumi KOBIKI ,  Takeshi Koshiba ,  Hidefumi Mukai ,  Seiro Miyoshi

IPC分类号： B29C35/08 ,  B29C39/00

CPC分类号： G03F7/0002 ,  B82Y10/00 ,  B82Y40/00

摘要： A pattern transfer method for transferring an uneven pattern onto a resist material is disclosed. The uneven pattern is formed in a template having a through-groove in a predetermined region. The resist material is applied to a substrate. The template is made to come into contact with the resist material. The resist material is filled to concave portion in the uneven pattern. The residual resist material leaked from a gap between the substrate and the template to the outside is sucked through the through-groove in a state where the template is in contact with the resist material. The resist material is made to cure in a state where the template is in contact with the resist material after the suction of the residual resist material. The template is separated from the cured resist material.

摘要翻译： 公开了一种用于将不均匀图案转印到抗蚀剂材料上的图案转印方法。 不规则图案形成在具有预定区域中的通槽的模板中。 将抗蚀剂材料施加到基底上。 使模板与抗蚀剂材料接触。 抗蚀剂材料以不均匀图案填充到凹部。 在模板与抗蚀剂材料接触的状态下，从基板和模板之间的间隙向外部泄漏的残留抗蚀剂材料通过贯通槽进行吸引。 抗蚀剂材料在残留抗蚀剂材料的吸附之后，在模板与抗蚀剂材料接触的状态下使其固化。 将模板与固化的抗蚀剂材料分离。

公开(公告)号：US20110224934A1

公开(公告)日：2011-09-15

申请号：US12882998

申请日：2010-09-15

申请人： Seiro Miyoshi ,  Hideaki Abe ,  Kazuhiro Takahata ,  Masafumi Asano ,  Shoji Mimotogi ,  Tomoko Ojima ,  Masanari Kajiwara

发明人： Seiro Miyoshi ,  Hideaki Abe ,  Kazuhiro Takahata ,  Masafumi Asano ,  Shoji Mimotogi ,  Tomoko Ojima ,  Masanari Kajiwara

IPC分类号： G06F19/00

CPC分类号： G03F7/70625 ,  G03F7/70525 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

摘要： According to one embodiment, an evaluating apparatus includes a resist-pattern-data acquiring unit and an evaluating unit. The resist-pattern-data acquiring unit acquires resist pattern data having a plurality of feature values including at least two among a hole diameter measured concerning a pattern for hole formation in the resist pattern, an aspect ratio of the hole diameter, and a difference of hole diameters at a plurality of signal thresholds. The evaluating unit calculates an evaluation value using an evaluation function for evaluating whether a hole pattern formed on a processing target by using the pattern for hole formation is unopened and the resist pattern data and evaluates presence or absence of a risk that the hole pattern is unopened.

摘要翻译： 根据一个实施例，评估装置包括抗蚀剂图案数据获取单元和评估单元。 抗蚀剂图案数据获取单元获取具有多个特征值的抗蚀剂图案数据，所述多个特征值包括测量的关于抗蚀剂图案中的孔形成图案的孔直径，孔直径的纵横比和 孔径在多个信号阈值。 评价单元使用评价函数来计算评价值，该评价函数用于评估是否未打开通过使用用于形成孔的图案而形成在处理对象上的孔图案，并且抵抗图案数据并评估是否存在未打开孔图案的风险 。

公开(公告)号：US07985685B2

公开(公告)日：2011-07-26

申请号：US12262439

申请日：2008-10-31

申请人： Yukiteru Matsui ,  Masako Kinoshita ,  Seiro Miyoshi ,  Yoshikuni Tateyama ,  Takeshi Nishioka ,  Hiroyuki Yano

发明人： Yukiteru Matsui ,  Masako Kinoshita ,  Seiro Miyoshi ,  Yoshikuni Tateyama ,  Takeshi Nishioka ,  Hiroyuki Yano

IPC分类号： H01L21/311

CPC分类号： H01L21/02118 ,  C09G1/02 ,  H01L21/022 ,  H01L21/02282 ,  H01L21/31058 ,  H01L21/31144 ,  H01L21/312 ,  H01L21/76808 ,  H01L21/76811 ,  H01L21/76835

摘要： A method for manufacturing a semiconductor device is provided, the method includes forming a coated film by coating a solution containing a solvent and an organic component above an insulating film located above a semiconductor substrate and having a recess, baking the coated film at a first temperature which does not accomplish cross-linking of the organic component to obtain an organic film precursor, polishing the organic film precursor using a slurry containing resin particles to leave the organic film precursor in the recess, baking the left organic film precursor at a second temperature which is higher than the first temperature to remove the solvent to obtain a first organic film embedded in the recess, forming a second organic film on the insulating film, thereby obtaining an underlying film, forming an intermediate layer and a resist film successively above the underlying film, and subjecting the resist film to patterning exposure.

摘要翻译： 提供了一种制造半导体器件的方法，该方法包括通过将含有溶剂和有机组分的溶液涂覆在位于半导体衬底上方并具有凹槽的绝缘膜上的溶液形成涂覆膜，在第一温度下烘烤该涂膜 其不能实现有机成分的交联以获得有机膜前体，使用含有树脂颗粒的浆料将有机膜前体抛光以在凹槽中离开有机膜前体，在第二温度下烘烤左有机膜前体 高于第一温度以除去溶剂以获得嵌入在凹部中的第一有机膜，在绝缘膜上形成第二有机膜，从而获得下面的膜，在基底膜上连续形成中间层和抗蚀剂膜 并对抗蚀剂膜进行图案曝光。

公开(公告)号：US06576375B1

公开(公告)日：2003-06-10

申请号：US09671678

申请日：2000-09-28

申请人： Seiro Miyoshi ,  Tsukasa Azuma ,  Hideyuki Kanemitsu

发明人： Seiro Miyoshi ,  Tsukasa Azuma ,  Hideyuki Kanemitsu

IPC分类号： G03F900

CPC分类号： G03F1/62 ,  G03F1/46 ,  G03F1/48 ,  G03F1/50 ,  G03F1/58

摘要： A photomask comprises a transparent substrate, a anti-reflection structure having a chromium oxide film, a chromium film and a chromium oxide film laminated in order on the major surface of the transparent substrate, an LiF film as a anti-reflection film formed on the surface of the first chromium oxide and at the interface between the chromium oxide film and the transparent substrate, and a spin-on-glass film formed on the surface of the chromium oxide film.

摘要翻译： 光掩模包括透明基板，在透明基板的主表面上依次层叠有氧化铬膜，铬膜和氧化铬膜的防反射结构，形成在透明基板上的防反射膜的LiF膜 第一氧化铬的表面和氧化铬膜与透明基板的界面，以及在氧化铬膜的表面上形成的旋涂玻璃膜。