Pattern forming method
    1.
    发明授权
    Pattern forming method 有权
    图案形成方法

    公开(公告)号:US08753803B2

    公开(公告)日:2014-06-17

    申请号:US12878828

    申请日:2010-09-09

    IPC分类号: G03F7/20

    CPC分类号: G03F7/0002

    摘要: According to one embodiment, a pattern forming method is disclosed. The method can include selectively providing a curing agent to a pattern in a template, contacting the template provided the curing agent to a substrate, irradiating the curing agent with light where the template and the substrate are contacted each other to harden the curing agent, demolding the template from the substrate to form a curing agent pattern on the substrate, and etching the substrate on a basis of the curing agent pattern.

    摘要翻译: 根据一个实施例,公开了一种图案形成方法。 该方法可以包括选择性地向模板中的图案提供固化剂,使提供固化剂的模板与基底接触,用光照射固化剂,其中模板和基底彼此接触以硬化固化剂,脱模 所述模板从所述基板在所述基板上形成固化剂图案,并且基于所述固化剂图案来蚀刻所述基板。

    PATTERN FORMING METHOD
    2.
    发明申请
    PATTERN FORMING METHOD 审中-公开
    图案形成方法

    公开(公告)号:US20100304568A1

    公开(公告)日:2010-12-02

    申请号:US12752684

    申请日:2010-04-01

    IPC分类号: H01L21/302 G03F7/20

    摘要: A pattern forming method includes forming a first photoresist on an underlying region, forming a second photoresist on the first photoresist, the second photoresist having an exposure sensitivity which is different from an exposure sensitivity of the first photoresist, radiating exposure light on the first and second photoresists via a photomask including a first transmissive region and a second transmissive region which cause a phase difference of 180° between transmissive light components passing therethrough, the first transmissive region and the second transmissive region being provided in a manner to neighbor in an irradiation region, and developing the first and second photoresists which have been irradiated with the exposure light, thereby forming a structure includes a first region where the underlying region is exposed, a second region where the first photoresist is exposed and a third region where the first photoresist and the second photoresist are left.

    摘要翻译: 图案形成方法包括在下面的区域上形成第一光致抗蚀剂,在第一光致抗蚀剂上形成第二光致抗蚀剂,第二光致抗蚀剂具有不同于第一光致抗蚀剂的曝光灵敏度的曝光灵敏度, 通过包括第一透射区域和第二透射区域的光掩模进行光刻,所述第一透射区域和第二透射区域在穿过其中的透射光分量之间产生180°的相位差,第一透射区域和第二透射区域以照射区域相邻的方式设置, 以及显影已经用曝光光照射的第一和第二光致抗蚀剂,由此形成结构,其包括下部区域被暴露的第一区域,第一光致抗蚀剂被曝光的第二区域和第一光致抗蚀剂 剩下第二光致抗蚀剂。

    IMPRINT METHOD
    3.
    发明申请
    IMPRINT METHOD 有权
    IMPRINT方法

    公开(公告)号:US20100078860A1

    公开(公告)日:2010-04-01

    申请号:US12563461

    申请日:2009-09-21

    IPC分类号: B29C35/08

    摘要: An imprint method includes applying a light curable resin on a substrate to be processed, the substrate including first and second regions on which the light curable resin is applied, contacting an imprint mold with the light curable resin, curing the light curable resin by irradiating the light curable resin with light passing through the imprint mold, generating gas by performing a predetermined process to the light curable resin applied on a region of the substrate, the region including at least the first region, wherein an amount of gas generated from the light curable resin applied on the first region is larger than an amount of gas generated from the light curable resin of the second region, and forming a pattern by separating the imprint mold from the light curable resin after the gas being generated.

    摘要翻译: 压印方法包括将光固化树脂施加在待加工的基板上,所述基板包括施加有光固化树脂的第一和第二区域,使印模与光固化树脂接触,通过照射光固化树脂来固化光固化树脂 光固化树脂,其光通过压印模具,通过对施加在基板的区域上的光固化树脂进行预定处理产生气体,该区域至少包括第一区域,其中从光可固化 施加在第一区域上的树脂大于由第二区域的光固化树脂产生的气体的量,并且在产生气体之后通过从光固化树脂分离压印模具来形成图案。

    SUBSTRATE PROCESSING APPARATUS AND METHOD
    4.
    发明申请
    SUBSTRATE PROCESSING APPARATUS AND METHOD 失效
    基板加工装置和方法

    公开(公告)号:US20090226624A1

    公开(公告)日:2009-09-10

    申请号:US12466525

    申请日:2009-05-15

    摘要: A substrate-processing apparatus includes a sample table which mounts thereon a to-be-processed substrate, a first line which supplies a chemical solution, a second line which supplies a cleaning liquid, a three-way valve connected to the first and second lines and configured to select one of the first and second lines, a filter provided across the first line upstream of the three-way valve, and configured to eliminate a foreign material from the chemical solution, and a nozzle provided downstream of the three-way valve and configured to discharge the chemical solution or the cleaning liquid when the first or second line is selected via the three-way valve. The three-way valve selects the first line when the substrate is coated with the chemical solution, and selects the second line in other cases.

    摘要翻译: 基板处理装置包括安装在被处理基板上的样品台,供给化学溶液的第一管线,供给清洗液的第二管线,与第一管路和第二管路连接的三通阀 并且构造成选择第一和第二管线中的一个,设置在三通阀上游的第一线上的过滤器,并且被配置为从化学溶液中除去异物,以及设置在三通阀下游的喷嘴 并且构造成当通过三通阀选择第一或第二管线时,排出化学溶液或清洗液体。 当基材涂有化学溶液时,三通阀选择第一行,在其他情况下选择第二行。

    Method of manufacturing semiconductor device
    5.
    发明授权
    Method of manufacturing semiconductor device 失效
    制造半导体器件的方法

    公开(公告)号:US07537871B2

    公开(公告)日:2009-05-26

    申请号:US11543208

    申请日:2006-10-05

    IPC分类号: G03C5/00 G03F9/00 G01N21/41

    CPC分类号: G03F7/70341 G03F7/70625

    摘要: A method of manufacturing a semiconductor device using immersion exposure in which exposure is carried out with an immersion exposure liquid interposed between a projection lens and a substrate, includes preparing a photomask on which a plurality of patterns are formed, projecting the patterns formed on the photomask, on a predetermined surface via the projection lens and the immersion exposure liquid, acquiring dimensional information on dimension acquiring patterns based on the patterns projected on the predetermined surface, adjusting a refractive index of the immersion exposure liquid on the basis of the dimensional information, and projecting patterns formed on the photomask, on a substrate via the projection lens and the immersion exposure liquid with the refractive index adjusted.

    摘要翻译: 一种使用浸渍曝光制造半导体器件的方法,其中浸渍曝光液体介于投影透镜和基片之间进行曝光,包括制备其上形成有多个图案的光掩模,突出形成在光掩模上的图案 经由投影透镜和浸渍曝光液体在预定表面上,基于投影在预定表面上的图案获取关于尺寸获取图案的尺寸信息,基于尺寸信息调整浸没曝光液体的折射率,以及 通过投影透镜和折射率调节的浸渍曝光液体在光掩模上形成在基板上的投射图案。

    PATTERNING METHOD
    6.
    发明申请
    PATTERNING METHOD 审中-公开
    绘图方法

    公开(公告)号:US20090123878A1

    公开(公告)日:2009-05-14

    申请号:US12256240

    申请日:2008-10-22

    IPC分类号: G03F7/20

    摘要: A patterning method includes: forming a first film on a workpiece substrate; forming a second film on the first film, the second film being a silicon film having a lower optical absorption coefficient with respect to EUV (extreme ultraviolet) light than the first film; forming a resist film on the second film; selectively irradiating the resist film with the EUV light; and developing the resist film.

    摘要翻译: 图案化方法包括:在工件基板上形成第一膜; 在第一膜上形成第二膜,第二膜是相对于第一膜的EUV(极紫外)光具有较低的光吸收系数的硅膜; 在第二膜上形成抗蚀剂膜; 用EUV光选择性地照射抗蚀剂膜; 并开发抗蚀膜。

    Pattern formation method using fine pattern formation material for use in semiconductor fabrication step
    7.
    发明申请
    Pattern formation method using fine pattern formation material for use in semiconductor fabrication step 审中-公开
    使用精细图案形成材料的图案形成方法用于半导体制造步骤

    公开(公告)号:US20080138746A1

    公开(公告)日:2008-06-12

    申请号:US11896870

    申请日:2007-09-06

    IPC分类号: G03F7/26

    CPC分类号: G03F7/40

    摘要: A resist pattern is formed on the major surface of a semiconductor substrate, and coated with a water-soluble pattern formation material having thermal crosslinking properties in the presence of an acid. A crosslinking film is formed by heating in that portion of the water-soluble pattern formation material which is in contact with the resist pattern. A pattern is formed by removing a portion of the water-soluble pattern formation material except for the crosslinking film by using an aqueous alkali solution containing a surfactant.

    摘要翻译: 在半导体基板的主表面上形成抗蚀剂图案,并在酸存在下涂布具有热交联性的水溶性图案形成材料。 在与抗蚀剂图案接触的部分水溶性图案形成材料中加热形成交联膜。 通过使用含有表面活性剂的碱性水溶液除去交联膜以外的一部分水溶性图案形成材料,形成图案。

    Method of processing a substrate, heating apparatus, and method of forming a pattern
    8.
    发明申请
    Method of processing a substrate, heating apparatus, and method of forming a pattern 审中-公开
    加工基板的方法,加热装置以及形成图案的方法

    公开(公告)号:US20080064226A1

    公开(公告)日:2008-03-13

    申请号:US11976499

    申请日:2007-10-25

    IPC分类号: H01L21/31

    摘要: A method of processing a substrate, comprising forming a chemically amplified resist film on a substrate, irradiating energy beams to the chemically amplified resist film to form a latent image therein, carrying out heat treatment with respect to the chemically amplified resist film, heating treatment being carried out in a manner of relatively moving a heating section for heating the chemically amplified resist film and the substrate forming a gas stream flowing reverse to the relatively moving direction of the heating section between the lower surface of the heating section and the chemically amplified resist film.

    摘要翻译: 一种处理衬底的方法,包括在衬底上形成化学放大抗蚀剂膜,将能量束照射到化学放大抗蚀剂膜上以在其中形成潜像,对化学放大抗蚀剂膜进行热处理,加热处理为 以相对移动用于加热化学放大抗蚀剂膜的加热部分和形成在加热部分的下表面和化学放大抗蚀剂膜之间形成与加热部分的相对移动方向相反的方向流动的气流的加热部分的方式进行 。