公开(公告)号：US07863086B2

公开(公告)日：2011-01-04

申请号：US12553780

申请日：2009-09-03

申请人： Bo-sung Kim ,  Soo-jin Kim ,  Young-min Kim ,  Keun-kyu Song ,  Yong-uk Lee ,  Mun-pyo Hong ,  Tae-young Choi ,  Joon-hak Oh

发明人： Bo-sung Kim ,  Soo-jin Kim ,  Young-min Kim ,  Keun-kyu Song ,  Yong-uk Lee ,  Mun-pyo Hong ,  Tae-young Choi ,  Joon-hak Oh

IPC分类号： H01L51/40

CPC分类号： H01L51/0533 ,  H01L51/107

摘要： A thin film transistor substrate includes an insulating substrate, a gate electrode formed on the insulating substrate, a first gate insulating film formed on the gate electrode and having an opening for exposing at least part of the gate electrode, a second gate insulating film covering the gate electrode exposed by the opening and having a larger dielectric constant than the first gate insulating film, a source electrode and a drain electrode disposed apart from each other in a central area of the second gate insulating film and defining a channel region there between, and an organic semiconductor layer formed in the channel region. A method for forming the TFT substrate is also provided. Thus, the present invention provides a TFT substrate in which a characteristic of a TFT is improved.

摘要翻译： 薄膜晶体管基板包括绝缘基板，形成在绝缘基板上的栅极电极，形成在栅电极上并具有用于暴露栅电极的至少一部分的开口的第一栅极绝缘膜，覆盖 栅电极由开口暴露并且具有比第一栅极绝缘膜更大的介电常数，在第二栅极绝缘膜的中心区域彼此分开设置的源电极和漏电极，并在其间限定沟道区域， 形成在沟道区域中的有机半导体层。 还提供了一种用于形成TFT基板的方法。 因此，本发明提供了TFT的特性提高的TFT基板。

公开(公告)号：US20070018161A1

公开(公告)日：2007-01-25

申请号：US11433733

申请日：2006-05-12

申请人： Keun-kyu Song ,  Yong-uk Lee ,  Mun-pyo Hong ,  Tae-young Choi ,  Joon-hak Oh ,  Bo-sung Kim ,  Soo-jin Kim ,  Young-min Kim

发明人： Keun-kyu Song ,  Yong-uk Lee ,  Mun-pyo Hong ,  Tae-young Choi ,  Joon-hak Oh ,  Bo-sung Kim ,  Soo-jin Kim ,  Young-min Kim

IPC分类号： H01L29/04 ,  H01L21/84

CPC分类号： H01L51/0533 ,  H01L51/107

摘要： A thin film transistor substrate includes an insulating substrate, a gate electrode formed on the insulating substrate, a first gate insulating film formed on the gate electrode and having an opening for exposing at least part of the gate electrode, a second gate insulating film covering the gate electrode exposed by the opening and having a larger dielectric constant than the first gate insulating film, a source electrode and a drain electrode disposed apart from each other in a central area of the second gate insulating film and defining a channel region there between, and an organic semiconductor layer formed in the channel region. A method for forming the TFT substrate is also provided. Thus, the present invention provides a TFT substrate in which a characteristic of a TFT is improved.

摘要翻译： 薄膜晶体管基板包括绝缘基板，形成在绝缘基板上的栅极电极，形成在栅电极上并具有用于暴露栅电极的至少一部分的开口的第一栅极绝缘膜，覆盖 栅电极由开口暴露并且具有比第一栅极绝缘膜更大的介电常数，在第二栅极绝缘膜的中心区域彼此分开设置的源电极和漏电极，并在其间限定沟道区域， 形成在沟道区域中的有机半导体层。 还提供了一种用于形成TFT基板的方法。 因此，本发明提供了TFT的特性提高的TFT基板。

公开(公告)号：US07605395B2

公开(公告)日：2009-10-20

申请号：US11433733

申请日：2006-05-12

申请人： Keun-kyu Song ,  Yong-uk Lee ,  Mun-pyo Hong ,  Tae-young Choi ,  Joon-hak Oh ,  Bo-sung Kim ,  Soo-jin Kim ,  Young-min Kim

发明人： Keun-kyu Song ,  Yong-uk Lee ,  Mun-pyo Hong ,  Tae-young Choi ,  Joon-hak Oh ,  Bo-sung Kim ,  Soo-jin Kim ,  Young-min Kim

IPC分类号： H01L51/10

CPC分类号： H01L51/0533 ,  H01L51/107

摘要： A thin film transistor substrate includes an insulating substrate, a gate electrode formed on the insulating substrate, a first gate insulating film formed on the gate electrode and having an opening for exposing at least part of the gate electrode, a second gate insulating film covering the gate electrode exposed by the opening and having a larger dielectric constant than the first gate insulating film, a source electrode and a drain electrode disposed apart from each other in a central area of the second gate insulating film and defining a channel region there between, and an organic semiconductor layer formed in the channel region. A method for forming the TFT substrate is also provided. Thus, the present invention provides a TFT substrate in which a characteristic of a TFT is improved.

摘要翻译： 薄膜晶体管基板包括绝缘基板，形成在绝缘基板上的栅极电极，形成在栅电极上并具有用于暴露栅电极的至少一部分的开口的第一栅极绝缘膜，覆盖 栅电极由开口暴露并且具有比第一栅极绝缘膜更大的介电常数，在第二栅极绝缘膜的中心区域彼此分开设置的源电极和漏电极，并在其间限定沟道区域， 形成在沟道区域中的有机半导体层。 还提供了一种用于形成TFT基板的方法。 因此，本发明提供了TFT的特性提高的TFT基板。

公开(公告)号：US07599013B2

公开(公告)日：2009-10-06

申请号：US11724889

申请日：2007-03-15

申请人： Keun-kyu Song ,  Mun-pyo Hong ,  Young-min Kim

发明人： Keun-kyu Song ,  Mun-pyo Hong ,  Young-min Kim

IPC分类号： G02F1/1343

CPC分类号： G02F1/136213 ,  G02F1/136286 ,  G02F2201/50

摘要： A display device capable of minimizing leakage of a voltage applied to a storage line, comprising an insulating substrate; a first metal wiring layer which is formed on the insulating substrate; a storage line which is isolated from the first metal wiring layer and formed along the first metal wiring layer; a first insulating film which covers the first metal wiring layer and the storage line; a second metal wiring layer which is formed on the first insulating film and comprises a storage capacity forming layer corresponding to the storage line; a second insulating film which covers the second metal wiring layer and comprises a pixel contact hole exposing a portion of the storage capacity forming layer; and a pixel electrode which is formed on the second insulating film and connected to the storage capacity forming layer via the pixel contact hole.

摘要翻译： 一种显示装置，其能够使施加到存储线的电压的泄漏最小化，包括绝缘基板; 形成在绝缘基板上的第一金属布线层; 存储线，与所述第一金属布线层隔离并且沿着所述第一金属布线层形成; 覆盖第一金属布线层和存储线的第一绝缘膜; 第二金属布线层，其形成在所述第一绝缘膜上并且包括与所述存储线相对应的存储容量形成层; 第二绝缘膜，其覆盖所述第二金属布线层并且包括暴露所述存储电容形成层的一部分的像素接触孔; 以及形成在第二绝缘膜上并经由像素接触孔连接到存储电容形成层的像素电极。

公开(公告)号：US20070216823A1

公开(公告)日：2007-09-20

申请号：US11724889

申请日：2007-03-15

申请人： Keun-kyu Song ,  Mun-pyo Hong ,  Young-min Kim

发明人： Keun-kyu Song ,  Mun-pyo Hong ,  Young-min Kim

IPC分类号： G02F1/136

CPC分类号： G02F1/136213 ,  G02F1/136286 ,  G02F2201/50

摘要： A display device capable of minimizing leakage of a voltage applied to a storage line, comprising an insulating substrate; a first metal wiring layer which is formed on the insulating substrate; a storage line which is isolated from the first metal wiring layer and formed along the first metal wiring layer; a first insulating film which covers the first metal wiring layer and the storage line; a second metal wiring layer which is formed on the first insulating film and comprises a storage capacity forming layer corresponding to the storage line; a second insulating film which covers the second metal wiring layer and comprises a pixel contact hole exposing a portion of the storage capacity forming layer; and a pixel electrode which is formed on the second insulating film and connected to the storage capacity forming layer via the pixel contact hole.

摘要翻译： 一种显示装置，其能够使施加到存储线的电压的泄漏最小化，包括绝缘基板; 形成在绝缘基板上的第一金属布线层; 存储线，与所述第一金属布线层隔离并且沿着所述第一金属布线层形成; 覆盖第一金属布线层和存储线的第一绝缘膜; 第二金属布线层，其形成在所述第一绝缘膜上并且包括与所述存储线相对应的存储容量形成层; 第二绝缘膜，其覆盖所述第二金属布线层并且包括暴露所述存储电容形成层的一部分的像素接触孔; 以及形成在第二绝缘膜上并经由像素接触孔连接到存储电容形成层的像素电极。

公开(公告)号：US07575951B2

公开(公告)日：2009-08-18

申请号：US11486685

申请日：2006-07-14

申请人： Tae-young Choi ,  Jun-hyung Kim ,  Keun-kyu Song ,  Mun-pyo Hong

发明人： Tae-young Choi ,  Jun-hyung Kim ,  Keun-kyu Song ,  Mun-pyo Hong

IPC分类号： H01L51/40

CPC分类号： H01L27/283 ,  H01L27/3244 ,  H01L51/0545

摘要： A method for fabricating a flat panel display, comprising preparing an insulating substrate; forming separated source and drain electrodes on the insulating substrate to define a channel region; forming a first passivation layer on the source and drain electrodes; forming a metal layer having an opening corresponding to the channel region on the first passivation layer; forming a deposition opening in the passivation layer by using the metal layer as a mask to expose the channel region; forming an organic semiconductor layer and a second passivation layer, in turn, in the deposition opening and on the metal layer; and removing the metal layer, the organic semiconductor layer and the second passivation layer while allowing the layers formed in the deposition opening to remain.

摘要翻译： 一种制造平板显示器的方法，包括制备绝缘基板; 在所述绝缘基板上形成分离的源极和漏极以限定沟道区; 在源极和漏极上形成第一钝化层; 在所述第一钝化层上形成具有与所述沟道区对应的开口的金属层; 通过使用金属层作为掩模在钝化层中形成沉积开口以暴露沟道区; 在沉积开口和金属层上依次形成有机半导体层和第二钝化层; 并且在保留形成在沉积开口中的层的同时去除金属层，有机半导体层和第二钝化层。

公开(公告)号：US20070012920A1

公开(公告)日：2007-01-18

申请号：US11487234

申请日：2006-07-14

申请人： Tae-young Choi ,  Bo-sung Kim ,  Keun-kyu Song ,  Mun-pyo Hong

发明人： Tae-young Choi ,  Bo-sung Kim ,  Keun-kyu Song ,  Mun-pyo Hong

IPC分类号： G02F1/136 ,  H01L29/04

CPC分类号： G02F1/136227 ,  G02F1/13458 ,  G02F2001/136295 ,  G02F2202/02 ,  H01L27/3244

摘要： The invention provides a flat panel display having an insulating substrate; a data line formed on the insulating substrate; an interlayer insulating film formed on the data line having a first contact opening exposing the data line; a connecting member formed in a part of the first contact opening; an interlayer insulating film around the first contact opening; a gate insulating film formed on the connecting member having a second contact opening exposing the connecting member; and an organic semiconductor layer formed on the gate insulating film.

摘要翻译： 本发明提供一种具有绝缘基板的平板显示器; 形成在所述绝缘基板上的数据线; 形成在数据线上的层间绝缘膜，具有暴露数据线的第一接触开口; 形成在所述第一接触开口的一部分中的连接构件; 围绕所述第一接触开口的层间绝缘膜; 形成在所述连接构件上的栅极绝缘膜，具有暴露所述连接构件的第二接触开口; 以及形成在栅极绝缘膜上的有机半导体层。

公开(公告)号：US20080090404A1

公开(公告)日：2008-04-17

申请号：US11947204

申请日：2007-11-29

申请人： Seung-Taek Lim ,  Mun-Pyo Hong ,  Nam-Seok Roh ,  Young-Joo Song ,  Sang-Ki Kwak ,  Kwon-Young Choi ,  Keun-kyu Song

发明人： Seung-Taek Lim ,  Mun-Pyo Hong ,  Nam-Seok Roh ,  Young-Joo Song ,  Sang-Ki Kwak ,  Kwon-Young Choi ,  Keun-kyu Song

IPC分类号： H01L21/4763

CPC分类号： G02F1/13458 ,  G02F1/136227 ,  G02F1/136286 ,  G02F2001/13629 ,  H01L21/76805 ,  H01L21/76816 ,  H01L23/53223 ,  H01L27/124 ,  H01L2924/0002 ,  H01L2924/00

摘要： In a method of fabricating a thin film transistor array substrate for a liquid crystal display, a gate line assembly is formed on a substrate with a chrome-based under-layer and an aluminum alloy-based over-layer while proceeding in the horizontal direction. The gate line assembly has gate lines, and gate electrodes, and gate pads. A gate insulating layer is deposited onto the insulating substrate such that the gate insulating layer covers the gate line assembly. A semiconductor layer and an ohmic contact layer are sequentially formed on the gate insulating layer. A data line assembly is formed on the ohmic contact layer with a chrome-based under-layer and an aluminum alloy-based over-layer. The data line assembly has data lines crossing over the gate lines, source electrodes, drain electrodes, and data pads. A protective layer is deposited onto the substrate, and patterned to thereby form contact holes exposing the drain electrodes, the gate pads, and the data pads. The sidewall of the under-layers for the gate line assembly and the data line assembly is exposed through the contact holes. An IZO-based layer is deposited onto the substrate, and patterned to thereby form pixel electrodes, subsidiary gate pads, and subsidiary data pads. The pixel electrodes are connected to the sidewall of the drain electrodes, and the subsidiary gate and data pads are connected to the sidewall of the gate and the data pads.

摘要翻译： 在制造用于液晶显示器的薄膜晶体管阵列基板的方法中，栅极线组件在沿水平方向前进的基底上形成有铬基底层和基于铝合金的超层。 栅极线组件具有栅极线，栅电极和栅极焊盘。 栅极绝缘层沉积在绝缘基板上，使得栅极绝缘层覆盖栅极线组件。 在栅极绝缘层上依次形成半导体层和欧姆接触层。 数据线组件在欧姆接触层上形成有铬基底层和基于铝合金的超层。 数据线组件具有跨越栅极线，源电极，漏电极和数据焊盘的数据线。 保护层沉积到衬底上，并被图案化，从而形成露出漏电极，栅极焊盘和数据焊盘的接触孔。 用于栅极线组件和数据线组件的下层的侧壁通过接触孔暴露。 将基于IZO的层沉积到衬底上并构图，从而形成像素电极，辅助栅极焊盘和辅助数据焊盘。 像素电极连接到漏电极的侧壁，辅助栅极和数据焊盘连接到栅极和数据焊盘的侧壁。

公开(公告)号：US20070012916A1

公开(公告)日：2007-01-18

申请号：US11486685

申请日：2006-07-14

申请人： Tae-young Choi ,  Jun-hyung Kim ,  Keun-kyu Song ,  Mun-pyo Hong

发明人： Tae-young Choi ,  Jun-hyung Kim ,  Keun-kyu Song ,  Mun-pyo Hong

IPC分类号： H01L51/00 ,  H01L51/40

CPC分类号： H01L27/283 ,  H01L27/3244 ,  H01L51/0545

摘要： A method for fabricating a flat panel display, comprising preparing an insulating substrate; forming separated source and drain electrodes on the insulating substrate to define a channel region; forming a first passivation layer on the source and drain electrodes; forming a metal layer having an opening corresponding to the channel region on the first passivation layer; forming a deposition opening in the passivation layer by using the metal layer as a mask to expose the channel region; forming an organic semiconductor layer and a second passivation layer, in turn, in the deposition opening and on the metal layer; and removing the metal layer, the organic semiconductor layer and the second passivation layer while allowing the layers formed in the deposition opening to remain.

摘要翻译： 一种制造平板显示器的方法，包括制备绝缘基板; 在所述绝缘基板上形成分离的源极和漏极以限定沟道区; 在源极和漏极上形成第一钝化层; 在所述第一钝化层上形成具有与所述沟道区对应的开口的金属层; 通过使用金属层作为掩模在钝化层中形成沉积开口以暴露沟道区; 在沉积开口和金属层上依次形成有机半导体层和第二钝化层; 并且在保留形成在沉积开口中的层的同时去除金属层，有机半导体层和第二钝化层。

公开(公告)号：US07538342B2

公开(公告)日：2009-05-26

申请号：US11487234

申请日：2006-07-14

申请人： Tae-young Choi ,  Bo-sung Kim ,  Keun-kyu Song ,  Mun-pyo Hong

发明人： Tae-young Choi ,  Bo-sung Kim ,  Keun-kyu Song ,  Mun-pyo Hong

IPC分类号： H01L29/08

CPC分类号： G02F1/136227 ,  G02F1/13458 ,  G02F2001/136295 ,  G02F2202/02 ,  H01L27/3244

摘要： The invention provides a flat panel display having an insulating substrate; a data line formed on the insulating substrate; an interlayer insulating film formed on the data line having a first contact opening exposing the data line; a connecting member formed in a part of the first contact opening; an interlayer insulating film around the first contact opening; a gate insulating film formed on the connecting member having a second contact opening exposing the connecting member; and an organic semiconductor layer formed on the gate insulating film.

摘要翻译： 本发明提供一种具有绝缘基板的平板显示器; 形成在所述绝缘基板上的数据线; 形成在数据线上的层间绝缘膜，具有暴露数据线的第一接触开口; 形成在所述第一接触开口的一部分中的连接构件; 围绕所述第一接触开口的层间绝缘膜; 形成在所述连接构件上的栅极绝缘膜，具有暴露所述连接构件的第二接触开口; 以及形成在栅极绝缘膜上的有机半导体层。