公开(公告)号：US06890863B1

公开(公告)日：2005-05-10

申请号：US09559504

申请日：2000-04-27

申请人： Kevin G. Donohoe ,  David S. Becker

发明人： Kevin G. Donohoe ,  David S. Becker

IPC分类号： H01L21/302 ,  H01L21/311 ,  H01L21/461 ,  H01L21/60 ,  H01L21/82

CPC分类号： H01L21/76897 ,  C09K13/08 ,  H01L21/31116 ,  H01L21/76802

摘要： The present invention relates to a method of anisotropically etching a semiconductive substrate uses a hydrofluorocarbon etch gas with an etch selectivity fluorocarbon gas that previously was used to enhance oxide etching but not nitride selectivity. The present invention uses the fluorocarbon gas under conditions that enhance selectivity of the etch to nitride with respect to a bulk dielectric material such as doped and undoped silicon dioxide.

摘要翻译： 本发明涉及一种各向异性蚀刻半导体衬底的方法，其使用具有预先用于增强氧化物蚀刻而不是氮化物选择性的蚀刻选择性碳氟化合物气体的氢氟烃蚀刻气体。 本发明在相对于诸如掺杂和未掺杂二氧化硅的体电介质材料增强蚀刻对氮化物的选择性的条件下使用碳氟化合物气体。

公开(公告)号：US06610212B2

公开(公告)日：2003-08-26

申请号：US10060436

申请日：2002-01-29

申请人： Kevin G. Donohoe ,  David S. Becker

发明人： Kevin G. Donohoe ,  David S. Becker

IPC分类号： H01L213065

CPC分类号： H01L21/31116

摘要： A plasma etch process for etching BPSG employing two primary etchants at low flows and pressures, and a relatively low temperature environment within the etch chamber, which includes a fluorine scavenger in the form of silicon. The two primary etchant gases are CHF3 and CH2F2, delivered at flow rates on the order of between about 10 and 40 sccm for CHF3 and between about 10 and 40 sccm for CH2F2. Small quantities, on the order of 10 sccm or less, of other gases such as C2HF5 and CF4 may be added.

公开(公告)号：US07163641B2

公开(公告)日：2007-01-16

申请号：US10448905

申请日：2003-05-30

申请人： Kevin G. Donohoe ,  David S. Becker

发明人： Kevin G. Donohoe ,  David S. Becker

IPC分类号： H01L21/3065 ,  H01L21/308 ,  H05H1/46 ,  C03C15/00 ,  C03C25/68

CPC分类号： H01L21/31116

摘要： A plasma etch process for etching BPSG employing two primary etchants at low flows and pressures, and a relatively low temperature environment within the etch chamber, which includes a fluorine scavenger in the form of silicon. The two primary etchant gases are CHF3 and CH2F2, delivered at flow rates on the order of between about 10 and 40 sccm for CHF3 and between about 10 and 40 sccm for CH2F2. Small quantities, on the order of 10 sccm or less, of other gases such as C2HF5 and CF4 may be added.

摘要翻译： 用于在低流量和压力下使用两个主要蚀刻剂蚀刻BPSG的等离子体蚀刻工艺，以及蚀刻室内的相对低温环境，其包括硅形式的氟清除剂。 两种主要的蚀刻剂气体是CHF 3 3和CH 2 F 2 H 2，以约10至40sccm的量级的流量递送，以 CHF 3 3和CH 2/2 F 2的约10至40sccm之间。 可以添加少量，约10sccm或更小的其它气体，例如C 2 H 5 H 3和CF 4。

公开(公告)号：US07074724B2

公开(公告)日：2006-07-11

申请号：US10888255

申请日：2004-07-09

申请人： Kevin G. Donohoe ,  David S. Becker

发明人： Kevin G. Donohoe ,  David S. Becker

IPC分类号： H01L21/302

CPC分类号： H01L21/76897 ,  C09K13/08 ,  H01L21/31116 ,  H01L21/76802

摘要： A method of anisotropiocally etching a semiconductive substrate uses a hydrofluorocarbon etch gas with an etch selectivity fluorocarbon gas. The fluorocarbon gas is used under conditions that enhance selectivity of the etch to an etch stop layer with respect to a bulk dielectric material such as doped or undoped silicon dioxide. In one method, a silicon dioxide dielectric layer is provided upon an etch stop layer, wherein the etch stop layer comprises silicon dioxide that is doped differently from the silicon dioxide dielectric layer. A gaseous etchant including a hydrofluorocarbon etch gas and a fluorocarbon selectivity compound is provided, and the silicon dioxide dielectric layer is exposed to the gaseous-etchant.

摘要翻译： 用各向异性蚀刻半导体衬底的方法使用具有蚀刻选择性碳氟化合物气体的氢氟烃蚀刻气体。 碳氟化合物气体在相对于诸如掺杂或未掺杂的二氧化硅的体电介质材料增强蚀刻停止层的蚀刻选择性的条件下使用。 在一种方法中，在蚀刻停止层上提供二氧化硅介电层，其中蚀刻停止层包括与二氧化硅介电层不同地掺杂的二氧化硅。 提供包括氢氟烃蚀刻气体和氟碳选择性化合物的气体蚀刻剂，并且将二氧化硅介电层暴露于气体蚀刻剂。

公开(公告)号：US06812154B2

公开(公告)日：2004-11-02

申请号：US10273851

申请日：2002-10-17

申请人： David S. Becker ,  Bradley J. Howard ,  Kevin G. Donohoe

发明人： David S. Becker ,  Bradley J. Howard ,  Kevin G. Donohoe

IPC分类号： H01L21302

CPC分类号： H01J37/321 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/76802 ,  H01L21/76804

摘要： A patterned organic masking layer is formed outwardly of a feature layer to be etched. It has at least one feature pattern having a minimum feature dimension of less than or equal to 0.3 micron. The feature layer has a thickness which is to be etched to form the one feature pattern in the feature layer. The feature pattern is plasma etched into the feature layer using the masking layer as a mask. The plasma etching comprises at least one etching segment where at least 30% of said thickness of the feature layer is etched using an etching gas comprising one gas compound comprising carbon, hydrogen and at least one halogen present at greater than or equal to 70% concentration by volume as compared to all carbon, hydrogen and halogen containing gas compounds in the etching gas. Such plasma etching is conducted under conditions effective to produce at least that portion of the one feature pattern in the feature layer formed during the one etching segment to have a sidewall taper, if any, of less than or equal to 5° and an organic masking layer top outer surface roughness proximate the feature pattern at a conclusion of the etching segment which is characterizable by an average value less than 100 Angstroms. Such value is determinable by scanning electron microscopy as an average maximum size of all surface discernible objects of the patterned masking layer as measured and averaged along any 0.3 micron length of top outer surface from the one feature pattern. Other implementations are also contemplated.

摘要翻译： 图案化的有机掩模层形成在要蚀刻的特征层的外侧。 它具有至少一个具有小于或等于0.3微米的最小特征尺寸的特征图案。 特征层具有要被蚀刻以在特征层中形成一个特征图案的厚度。 使用掩模层作为掩模将特征图案等离子体蚀刻到特征层中。 等离子体蚀刻包括至少一个蚀刻段，其中使用蚀刻气体蚀刻所述特征层的所述厚度的至少30％，所述蚀刻气体包括一种包含碳，氢和至少一种以大于或等于70％浓度的卤素的气体化合物 与蚀刻气体中的所有碳，氢和含卤素的气体化合物相比都是体积的。 这种等离子体蚀刻在有效地产生在一个蚀刻段期间形成的特征层中的至少一部分特征图案的条件下进行，以具有小于或等于5°的侧壁锥度（如果有的话）和有机掩模 在蚀刻段的结论处，靠近特征图案的顶层外表面粗糙度可以由小于100埃的平均值表征。 通过扫描电子显微镜作为图案化掩模层的所有表面可辨别物体的平均最大尺寸，可以通过扫描电子显微镜来测量该值，并且从该特征图案沿着顶部外表面的任何0.3微米长度测量和平均。 还考虑了其​​他实施方案。

公开(公告)号：US07183220B1

公开(公告)日：2007-02-27

申请号：US09677478

申请日：2000-10-02

申请人： Guy T. Blalock ,  David S. Becker ,  Kevin G. Donohoe

发明人： Guy T. Blalock ,  David S. Becker ,  Kevin G. Donohoe

IPC分类号： H01L21/302

CPC分类号： H01J37/32862 ,  H01L21/31116

摘要： A plasma etching method includes forming a polymer comprising carbon and a halogen over at least some internal surfaces of a plasma etch chamber. After forming the polymer, plasma etching is conducted using a gas which is effective to etch polymer from chamber internal surfaces. In one implementation, the gas has a hydrogen component effective to form a gaseous hydrogen halide from halogen liberated from the polymer. In one implementation, the gas comprises a carbon component effective to getter the halogen from the etched polymer. In another implementation, a plasma etching method includes positioning a semiconductor wafer on a wafer receiver within a plasma etch chamber. First plasma etching of material on the semiconductor wafer occurs with a gas comprising carbon and a halogen. A polymer comprising carbon and the halogen forms over at least some internal surfaces of the plasma etch chamber during the first plasma etching. After the first plasma etching and with the wafer on the wafer receiver, second plasma etching is conducted using a gas effective to etch polymer from chamber internal surfaces and getter halogen liberated from the polymer to restrict further etching of the material on the semiconductor wafer during the second plasma etching. The first and second plasma etchings are ideally conducted at subatmospheric pressure with the wafer remaining in situ on the receiver intermediate the first and second etchings, and with the chamber maintained at some subatmospheric pressure at all time intermediate the first and second plasma etchings.

摘要翻译： 等离子体蚀刻方法包括在等离子体蚀刻室的至少一些内表面上形成包含碳和卤素的聚合物。 在形成聚合物之后，使用有效地从室内表面蚀刻聚合物的气体进行等离子体蚀刻。 在一个实施方案中，气体具有有效地从从聚合物释放的卤素形成气态卤化氢的氢组分。 在一个实施方案中，气体包括有效地从蚀刻的聚合物中吸收卤素的碳组分。 在另一个实施方案中，等离子体蚀刻方法包括将半导体晶片定位在等离子体蚀刻室内的晶片接收器上。 半导体晶片上的材料的等离子体蚀刻首先用包含碳和卤素的气体进行。 在第一等离子体蚀刻期间，包含碳和卤素的聚合物在等离子体蚀刻室的至少一些内表面上形成。 在第一等离子体蚀刻和晶片接收器上的晶片之后，使用有效地从腔室内表面蚀刻聚合物的气体和从聚合物释放的吸气剂卤素来进行第二等离子体蚀刻，以限制在半导体晶片期间进一步蚀刻半导体晶片上的材料 第二等离子体蚀刻。 第一和第二等离子体蚀刻理想地在低于大气压的压力下进行，晶片在接收器上原位保留在第一和第二蚀刻物的中间，并且室在所有时间保持在一些低于大气压的压力下，介于第一和第二等离子体蚀刻之间。

公开(公告)号：US06958297B2

公开(公告)日：2005-10-25

申请号：US10445073

申请日：2003-05-23

申请人： David S. Becker ,  Bradley J. Howard ,  Kevin G. Donohoe

发明人： David S. Becker ,  Bradley J. Howard ,  Kevin G. Donohoe

IPC分类号： H01L21/302 ,  H01L21/311 ,  H01L21/461 ,  H01L21/768

CPC分类号： H01J37/321 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/76802 ,  H01L21/76804

摘要： A patterned organic masking layer is formed outwardly of a feature layer to be etched. It has at least one feature pattern having a minimum feature dimension of less than or equal to 0.3 micron. The feature pattern is plasma etched into the feature layer using the masking layer as a mask. The plasma etching comprises at least one etching segment using an etching gas comprising one gas compound comprising carbon, hydrogen and at least one halogen under conditions effective to produce at least that portion of the one feature pattern in the feature layer to have a sidewall taper, if any, of less than or equal to 5° and an organic masking layer top outer surface roughness proximate the feature pattern at a conclusion of the etching segment which is characterizable by an average value less than 100 Angstroms. Other implementations are also contemplated.

摘要翻译： 图案化的有机掩模层形成在要蚀刻的特征层的外侧。 它具有至少一个具有小于或等于0.3微米的最小特征尺寸的特征图案。 使用掩模层作为掩模将特征图案等离子体蚀刻到特征层中。 等离子体蚀刻包括使用蚀刻气体的至少一个蚀刻段，所述蚀刻气体包括一种包含碳，氢和至少一种卤素的气体化合物，该条件有效地产生至少该特征层中的一个特征图案的该部分具有侧壁锥形， 如果有的话，小于或等于5°的有机掩蔽层顶部外表面粗糙度，在蚀刻段结束时靠近特征图案，其特征在于平均值小于100埃。 还考虑了其​​他实施方案。

公开(公告)号：US06342165B1

公开(公告)日：2002-01-29

申请号：US09619101

申请日：2000-07-19

申请人： Kevin G. Donohoe ,  David S. Becker

发明人： Kevin G. Donohoe ,  David S. Becker

IPC分类号： H01L213065

CPC分类号： H01L21/31116

摘要： A plasma etch process for etching BPSG employing two primary etchants at low flows and pressures, and a relatively low temperature environment within the etch chamber, which includes a fluorine scavenger in the form of silicon. The two primary etchant gases are CHF3 and CH2F2, delivered at flow rates on the order of between about 10 and 40 sccm for CHF3 and between about 10 and 40 sccm for CH2F2. Small quantities, on the order of 10 sccm or less, of other gases such as C2HF5 and CF4 may be added. A variant of the inventive etch process employing only CHF3 during a second phase thereof may be useful in providing a “punch” or dimple at the contact bottom extending into the pristine substrate silicon under the BPSG and, optionally, other layers, and can be used to etch through both BPSG layers and nitride films to contact a word line (or the like) thereunder wherein the contact so formed has a reduced taper as it passes through the nitride film above the word line, resulting in a desirable, larger contact dimension. The system chamber temperature is defined and controlled at the roof over the wafer and the ring surrounding the wafer, the roof being held at a temperature of about 115° C. to 150° C. and preferably about 140° C., and the ring at about 200° C. to 250° C., and preferably at about 200° C. The temperature of the chuck supporting the wafer is maintained at between about −10° C. and +30° C. Chamber pressure is maintained at least at about >5 mTorr, preferably ≧20 mTorr, and most preferably between about 20 and 65 mTorr.

摘要翻译： 用于在低流量和压力下使用两个主要蚀刻剂蚀刻BPSG的等离子体蚀刻工艺，以及蚀刻室内的相对低温环境，其包括硅形式的氟清除剂。 两种主要的蚀刻剂气体是CHF 3和CH 2 F 2，以CHF 3的约10至40sccm的量级和CH 2 F 2的约10至40sccm的流速递送。 可以添加少量，大约10sccm或更小的其他气体，如C2HF5和CF4。 本发明的在其第二阶段仅使用CHF 3的蚀刻工艺的变型可用于在BPSG和任选的其他层下在延伸到原始衬底硅中的接触底部提供“冲孔”或凹坑，并且可以使用 以蚀刻通过两个BPSG层和氮化物膜以接触其上的字线（等），其中如此形成的接触在其通过字线上方的氮化物膜时具有减小的锥度，导致期望的更大的接触尺寸。 系统室温度被限定和控制在晶片周围的屋顶和围绕晶片的环上，屋顶保持在约115℃至150℃，优选约140℃的温度，并且环 约200℃至250℃，优选约200℃。支撑晶片的卡盘的温度保持在约-10℃至+ 30℃之间。腔室压力至少保持 在约> 5mTorr，优选> = 20mTorr，最优选在约20和65mTorr之间。

公开(公告)号：US07608196B2

公开(公告)日：2009-10-27

申请号：US11638955

申请日：2006-12-14

申请人： Kevin G. Donohoe ,  David S. Becker

发明人： Kevin G. Donohoe ,  David S. Becker

IPC分类号： H01L21/3065 ,  H01L21/308 ,  H05H1/46 ,  C03C15/00 ,  C03C25/68

CPC分类号： H01L21/31116

摘要： A plasma etch process for etching a dielectric material employing two primary etchants at low flows and pressures, and a relatively low temperature environment within the etch chamber. The two primary etchant gases are CHF3 and CH2F2, delivered at flow rates on the order of between about 10 sccm and 40 sccm for CHF3 and between about 10 sccm and 40 sccm for CH2F2. Small quantities, on the order of 10 sccm or less, of other gases such as C2HF5 and CF4 may be added.

摘要翻译： 用于在低流量和压力下使用两个初级蚀刻剂蚀刻介电材料的等离子体蚀刻工艺，以及蚀刻室内的相对低温环境。 两种主要的蚀刻剂气体是CHF 3和CH 2 F 2，以CHF 3约10sccm至40sccm的量级和CH 2 F 2约10sccm至40sccm的流速递送。 可以添加少量，大约10sccm或更小的其他气体，如C2HF5和CF4。

公开(公告)号：US06784108B1

公开(公告)日：2004-08-31

申请号：US09651871

申请日：2000-08-31

申请人： Kevin G. Donohoe ,  David S. Becker

发明人： Kevin G. Donohoe ,  David S. Becker

IPC分类号： H01L21302

CPC分类号： H01L21/76897 ,  H01J37/32082 ,  H01J2237/334 ,  H01L21/31116 ,  H01L21/76802

摘要： Etch profile control with pulsed gas flow and its applications to etching such as anisotropic etching of high aspect ratio features and etching of self-aligned contact structures in various processes. Pulsing can be applied according to this invention to the flow rate of a gas such as an etchant gas, a gas that leads to the deposition of a protective layer, a gas that modifies the deposition of a protective layer, and a gas that modifies etching.

摘要翻译： 具有脉冲气流的蚀刻轮廓控制及其在蚀刻中的应用，如各向异性蚀刻高纵横比特征以及在各种工艺中蚀刻自对准接触结构。 根据本发明的脉冲可以用于诸如蚀刻剂气体的气体的流量，导致保护层的沉积的气体，改变保护层的沉积的气体和改变蚀刻的气体 。