公开(公告)号：US08492237B2

公开(公告)日：2013-07-23

申请号：US13042902

申请日：2011-03-08

申请人： Kevin K. Chan ,  Erik M. Dahlstrom ,  Peter B. Gray ,  David L. Harame ,  Qizhi Liu

发明人： Kevin K. Chan ,  Erik M. Dahlstrom ,  Peter B. Gray ,  David L. Harame ,  Qizhi Liu

IPC分类号： H01L21/8222

CPC分类号： H01L29/73 ,  H01L21/28518 ,  H01L29/0821 ,  H01L29/66272 ,  H01L29/732 ,  H01L29/7378

摘要： Methods for fabricating bipolar junction transistors with self-aligned emitter and extrinsic base, bipolar junction transistors made by the methods, and design structures for a BiCMOS integrated circuit. The bipolar junction transistor is fabricated using a sacrificial emitter pedestal that provides a sacrificial mandrel promoting self-alignment between the emitter and the extrinsic base. The sacrificial emitter pedestal is subsequently removed to open an emitter window extending to the intrinsic base. An emitter is formed in the emitter window that lands on the intrinsic base.

摘要翻译： 用于制造具有自对准发射极和非本征基极的双极结型晶体管的方法，通过该方法制造的双极结型晶体管以及用于BiCMOS集成电路的设计结构。 使用牺牲发射器基座制造双极结型晶体管，该牺牲发射器基座提供牺牲的心轴，以促进发射极和外部基极之间的自对准。 随后去除牺牲发射器基座以打开延伸到本征基底的发射器窗口。 在发射器窗口中形成发射极，其位于本征基极上。

公开(公告)号：US20120228611A1

公开(公告)日：2012-09-13

申请号：US13042902

申请日：2011-03-08

申请人： Kevin K. Chan ,  Erik M. Dahlstrom ,  Peter B. Gray ,  David L. Harame ,  Qizhi Liu

发明人： Kevin K. Chan ,  Erik M. Dahlstrom ,  Peter B. Gray ,  David L. Harame ,  Qizhi Liu

IPC分类号： H01L29/73 ,  H01L21/331

CPC分类号： H01L29/73 ,  H01L21/28518 ,  H01L29/0821 ,  H01L29/66272 ,  H01L29/732 ,  H01L29/7378

摘要： Methods for fabricating bipolar junction transistors with self-aligned emitter and extrinsic base, bipolar junction transistors made by the methods, and design structures for a BiCMOS integrated circuit. The bipolar junction transistor is fabricated using a sacrificial emitter pedestal that provides a sacrificial mandrel promoting self-alignment between the emitter and the extrinsic base. The sacrificial emitter pedestal is subsequently removed to open an emitter window extending to the intrinsic base. An emitter is formed in the emitter window that lands on the intrinsic base.

摘要翻译： 用于制造具有自对准发射极和非本征基极的双极结型晶体管的方法，通过该方法制造的双极结型晶体管以及用于BiCMOS集成电路的设计结构。 使用牺牲发射器基座制造双极结型晶体管，该牺牲发射器基座提供牺牲的心轴，以促进发射极和外部基极之间的自对准。 随后去除牺牲发射器基座以打开延伸到本征基底的发射器窗口。 在发射器窗口中形成发射极，其位于本征基极上。

公开(公告)号：US20120126292A1

公开(公告)日：2012-05-24

申请号：US12951516

申请日：2010-11-22

申请人： Erik M. Dahlstrom ,  Peter B. Gray ,  Qizhi Liu

发明人： Erik M. Dahlstrom ,  Peter B. Gray ,  Qizhi Liu

IPC分类号： H01L29/737 ,  G06F9/45 ,  H01L21/331

CPC分类号： H01L29/7378 ,  H01L29/66242

摘要： Heterojunction bipolar transistors with reduced base resistance, as well as fabrication methods for heterojunction bipolar transistors and design structures for BiCMOS integrated circuits. The heterojunction bipolar transistor includes a conductive layer between the intrinsic base and the extrinsic base. The conductive layer is comprised of a conductive material, such as a silicide, having a lower resistivity than the materials forming the intrinsic base and the extrinsic base.

摘要翻译： 具有降低的基极电阻的异质结双极晶体管，以及用于BiCMOS集成电路的异质结双极晶体管和设计结构的制造方法。 异质结双极晶体管包括在本征基极和外部基极之间的导电层。 导电层由诸如硅化物的导电材料构成，其电阻率低于形成本征碱和非本征基的材料。

公开(公告)号：US08389372B2

公开(公告)日：2013-03-05

申请号：US12951516

申请日：2010-11-22

申请人： Erik M. Dahlstrom ,  Peter B. Gray ,  Qizhi Liu

发明人： Erik M. Dahlstrom ,  Peter B. Gray ,  Qizhi Liu

IPC分类号： H01L21/331 ,  H01L21/8222

CPC分类号： H01L29/7378 ,  H01L29/66242

摘要： Heterojunction bipolar transistors with reduced base resistance, as well as fabrication methods for heterojunction bipolar transistors and design structures for BiCMOS integrated circuits. The heterojunction bipolar transistor includes a conductive layer between the intrinsic base and the extrinsic base. The conductive layer is comprised of a conductive material, such as a silicide, having a lower resistivity than the materials forming the intrinsic base and the extrinsic base.

公开(公告)号：US20130009280A1

公开(公告)日：2013-01-10

申请号：US13177146

申请日：2011-07-06

申请人： Renata Camillo-Castillo ,  Peter B. Gray ,  David L. Harame ,  Alvin J. Joseph ,  Marwan H. Khater ,  Qizhi Liu

发明人： Renata Camillo-Castillo ,  Peter B. Gray ,  David L. Harame ,  Alvin J. Joseph ,  Marwan H. Khater ,  Qizhi Liu

IPC分类号： H01L21/331 ,  H01L29/73

CPC分类号： H01L29/73 ,  H01L21/8249 ,  H01L27/0623 ,  H01L29/0821 ,  H01L29/107 ,  H01L29/66272 ,  H01L29/7322

摘要： Methods for fabricating bipolar junction transistors, bipolar junction transistors made by the methods, and design structures for a bipolar junction transistor. The bipolar junction transistor includes a dielectric layer on an intrinsic base and an extrinsic base at least partially separated from the intrinsic base by the dielectric layer. An emitter opening extends through the extrinsic base and the dielectric layer. The dielectric layer is recessed laterally relative to the emitter opening to define a cavity between the intrinsic base and the extrinsic base. The cavity is filled with a semiconductor layer that physically links the extrinsic base and the intrinsic base together.

摘要翻译： 用于制造双极结型晶体管的方法，通过该方法制造的双极结型晶体管以及双极结型晶体管的设计结构。 双极结晶体管包括在本征基极上的电介质层和通过电介质层至少部分地与本征基极分离的外部基极。 发射极开口延伸穿过外部基极和电介质层。 电介质层相对于发射器开口横向凹入以限定内部基极和外部基极之间的腔。 空腔填充有将外部基极和内在基极物理连接在一起的半导体层。

公开(公告)号：US08536012B2

公开(公告)日：2013-09-17

申请号：US13177146

申请日：2011-07-06

申请人： Renata Camillo-Castillo ,  Peter B. Gray ,  David L. Harame ,  Alvin J. Joseph ,  Marwan H. Khater ,  Qizhi Liu

发明人： Renata Camillo-Castillo ,  Peter B. Gray ,  David L. Harame ,  Alvin J. Joseph ,  Marwan H. Khater ,  Qizhi Liu

IPC分类号： H01L21/331 ,  H01L21/02

CPC分类号： H01L29/73 ,  H01L21/8249 ,  H01L27/0623 ,  H01L29/0821 ,  H01L29/107 ,  H01L29/66272 ,  H01L29/7322

摘要： Methods for fabricating bipolar junction transistors, bipolar junction transistors made by the methods, and design structures for a bipolar junction transistor. The bipolar junction transistor includes a dielectric layer on an intrinsic base and an extrinsic base at least partially separated from the intrinsic base by the dielectric layer. An emitter opening extends through the extrinsic base and the dielectric layer. The dielectric layer is recessed laterally relative to the emitter opening to define a cavity between the intrinsic base and the extrinsic base. The cavity is filled with a semiconductor layer that physically links the extrinsic base and the intrinsic base together.

摘要翻译： 用于制造双极结型晶体管的方法，通过该方法制造的双极结型晶体管以及双极结型晶体管的设计结构。 双极结晶体管包括在本征基极上的电介质层和通过电介质层至少部分地与本征基极分离的外部基极。 发射极开口延伸穿过外部基极和电介质层。 电介质层相对于发射器开口横向凹入以限定内部基极和外部基极之间的腔。 空腔填充有将外部基极和内在基极物理连接在一起的半导体层。

公开(公告)号：US20110309471A1

公开(公告)日：2011-12-22

申请号：US12817249

申请日：2010-06-17

申请人： Renata Camillo-Castillo ,  Mattias E. Dahlstrom ,  Peter B. Gray ,  David L. Harame ,  Russell T. Herrin ,  Alvin J. Joseph ,  Andreas D. Stricker

发明人： Renata Camillo-Castillo ,  Mattias E. Dahlstrom ,  Peter B. Gray ,  David L. Harame ,  Russell T. Herrin ,  Alvin J. Joseph ,  Andreas D. Stricker

IPC分类号： H01L29/73 ,  H01L21/331

CPC分类号： H01L29/732 ,  H01L29/66242 ,  H01L29/66287 ,  H01L29/7378

摘要： Disclosed are embodiments of an improved transistor structure (e.g., a bipolar transistor (BT) structure or heterojunction bipolar transistor (HBT) structure) and a method of forming the transistor structure. The structure embodiments can incorporate a dielectric layer sandwiched between an intrinsic base layer and a raised extrinsic base layer to reduce collector-base capacitance Ccb, a sidewall-defined conductive strap for an intrinsic base layer to extrinsic base layer link-up region to reduce base resistance Rb and a dielectric spacer between the extrinsic base layer and an emitter layer to reduce base-emitter Cbe capacitance. The method embodiments allow for self-aligning of the emitter to base regions and further allow the geometries of different features (e.g., the thickness of the dielectric layer, the width of the conductive strap, the width of the dielectric spacer and the width of the emitter layer) to be selectively adjusted in order to optimize transistor performance.

摘要翻译： 公开了改进的晶体管结构（例如，双极晶体管（BT）结构或异质结双极晶体管（HBT）结构）的实施例以及形成晶体管结构的方法。 结构实施例可以包括夹在本征基极层和凸起的非本征基极层之间的电介质层，以将集电极 - 基极电容Ccb，用于本征基极层的侧壁限定导电带限制到外部基极层连接区域以减少基极 电阻Rb和外部基极层和发射极层之间的介电间隔物，以减少基极 - 发射极的Cbe电容。 该方法实施例允许发射极与基极区域的自对准，并进一步允许不同特征的几何形状（例如，电介质层的厚度，导电带的宽度，电介质间隔物的宽度和介电隔离物的宽度 发射极层）进行选择性调整，以优化晶体管性能。

公开(公告)号：US06448124B1

公开(公告)日：2002-09-10

申请号：US09439067

申请日：1999-11-12

申请人： Douglas D. Coolbaugh ,  James S. Dunn ,  Peter J. Geiss ,  Peter B. Gray ,  David L. Harame ,  Kathryn T. Schonenberg ,  Stephen A. St. Onge ,  Seshadri Subbanna

发明人： Douglas D. Coolbaugh ,  James S. Dunn ,  Peter J. Geiss ,  Peter B. Gray ,  David L. Harame ,  Kathryn T. Schonenberg ,  Stephen A. St. Onge ,  Seshadri Subbanna

IPC分类号： H01L218238

CPC分类号： H01L21/76224 ,  H01L21/763 ,  H01L21/8249

摘要： A method of forming a BiCMOS integrated circuit is provided which comprises the steps of: (a) forming a first portion of a bipolar device in first regions of a substrate; (b) forming a first protective layer over said first regions to protect said first portion of said bipolar devices; (c) forming field effect transistor devices in second regions of said substrate; (d) forming a second protective layer over said second regions of said substrate to protect said field effect transistor devices; (e) removing said first protective layer; (f) forming a second portion of said bipolar devices in said first regions of said substrate; and (g) removing said second protective layer.

摘要翻译： 提供一种形成BiCMOS集成电路的方法，其包括以下步骤：（a）在衬底的第一区域中形成双极器件的第一部分; （b）在所述第一区域上形成第一保护层以保护所述双极器件的所述第一部分; （c）在所述衬底的第二区域中形成场效应晶体管器件; （d）在所述衬底的所述第二区域上形成第二保护层以保护所述场效应晶体管器件; （e）去除所述第一保护层; （f）在所述衬底的所述第一区域中形成所述双极器件的第二部分; 和（g）去除所述第二保护层。

公开(公告)号：US08405186B2

公开(公告)日：2013-03-26

申请号：US12817249

申请日：2010-06-17

申请人： Renata Camillo-Castillo ,  Mattias E. Dahlstrom ,  Peter B. Gray ,  David L. Harame ,  Russell T. Herrin ,  Alvin J. Joseph ,  Andreas D. Stricker

发明人： Renata Camillo-Castillo ,  Mattias E. Dahlstrom ,  Peter B. Gray ,  David L. Harame ,  Russell T. Herrin ,  Alvin J. Joseph ,  Andreas D. Stricker

IPC分类号： H01L21/70

CPC分类号： H01L29/732 ,  H01L29/66242 ,  H01L29/66287 ,  H01L29/7378

摘要： Disclosed are embodiments of an improved transistor structure (e.g., a bipolar transistor (BT) structure or heterojunction bipolar transistor (HBT) structure) and a method of forming the transistor structure. The structure embodiments can incorporate a dielectric layer sandwiched between an intrinsic base layer and a raised extrinsic base layer to reduce collector-base capacitance Ccb, a sidewall-defined conductive strap for an intrinsic base layer to extrinsic base layer link-up region to reduce base resistance Rb and a dielectric spacer between the extrinsic base layer and an emitter layer to reduce base-emitter Cbe capacitance. The method embodiments allow for self-aligning of the emitter to base regions and further allow the geometries of different features (e.g., the thickness of the dielectric layer, the width of the conductive strap, the width of the dielectric spacer and the width of the emitter layer) to be selectively adjusted in order to optimize transistor performance.

摘要翻译： 公开了改进的晶体管结构（例如，双极晶体管（BT）结构或异质结双极晶体管（HBT）结构）的实施例以及形成晶体管结构的方法。 结构实施例可以包括夹在本征基极层和凸起的非本征基极层之间的电介质层，以将集电极 - 基极电容Ccb，用于本征基极层的侧壁限定导电带限制到外部基极层连接区域以减少基极 电阻Rb和外部基极层和发射极层之间的介电间隔物，以减少基极 - 发射极的Cbe电容。 该方法实施例允许发射极与基极区域的自对准，并进一步允许不同特征的几何形状（例如，电介质层的厚度，导电带的宽度，电介质间隔物的宽度和介电隔离物的宽度 发射极层）进行选择性调整，以优化晶体管性能。

公开(公告)号：US20090020851A1

公开(公告)日：2009-01-22

申请号：US11614757

申请日：2006-12-21

申请人： Qizhi Liu ,  Peter B. Gray ,  Alvin J. Joseph

发明人： Qizhi Liu ,  Peter B. Gray ,  Alvin J. Joseph

IPC分类号： H01L21/331 ,  H01L29/73

CPC分类号： H01L29/41708 ,  H01L29/66242 ,  H01L29/66287 ,  H01L29/732 ,  H01L29/7371

摘要： A method of fabricating an heterojunction bipolar transistor (HBT) structure in a bipolar complementary metal-oxide-semiconductor (BiCMOS) process selectively thickens an oxide layer overlying a base region in areas that are not covered by a temporary emitter and spacers such that the temporary emitter can be removed and the base-emitter junction can be exposed without also completely removing the oxide overlying the areas of the base region that are not covered by the temporary emitter or spacers. As a result, a photomask is not required to remove the temporary emitter and to expose the base-emitter junction.

摘要翻译： 在双极互补金属氧化物半导体（BiCMOS）工艺中制造异质结双极晶体管（HBT）结构的方法在未被临时发射极和间隔物覆盖的区域中的基极区域上选择性地增厚氧化物层，使得临时 可以去除发射极，并且可以暴露基极 - 发射极结，而不会完全去除覆盖在未被临时发射极或间隔物覆盖的基极区域的区域上的氧化物。 结果，不需要光掩模去除临时发射体并露出基极 - 发射极结。