Spin valve magnetoresistive sensor with self-pinned laminated layer and
magnetic recording system using the sensor
    1.
    发明授权
    Spin valve magnetoresistive sensor with self-pinned laminated layer and magnetic recording system using the sensor 失效
    旋转阀磁阻传感器采用自锁层压层和磁记录系统,采用传感器

    公开(公告)号:US5583725A

    公开(公告)日:1996-12-10

    申请号:US259815

    申请日:1994-06-15

    摘要: A magnetic recording system uses an improved spin valve magnetoresistive (SVMR) sensor. The SVMR sensor has a self-pinned laminated layer as the pinned ferromagnetic layer in place of the conventional single-layer pinned layer. Because this laminated layer is "self-pinned", a hard bias or exchange bias layer is not needed. The self-pinned laminated layer has at least two ferromagnetic films antiferromagnetically coupled to one another across a thin antiferromagnetically (AF) coupling film. Since the two ferromagnetic films in this laminated layer have their magnetic moments aligned antiparallel, their two magnetic moments can be made to essentially cancel by making the two ferromagnetic films of substantially the same thickness. The magnetic field energy generated by the signal field acting on this laminated layer will be significantly less than the effective anisotropy energy of the laminated layer. This is because the former is proportional to the difference in thicknesses of the two ferromagnetic films in the laminated layer, while the latter is proportional to the sum of the thicknesses. As a result, the laminated layer will not rotate in the presence of the signal field, but will be "self-pinned". The elimination of the exchange bias layer previously required for pinning also eliminates the need for Ni--Mn and its associated high-temperature process.

    摘要翻译: 磁记录系统使用改进的自旋阀磁阻(SVMR)传感器。 SVMR传感器具有作为固定铁磁层的自固定层压层,代替传统的单层固定层。 因为该层叠层是“自固定的”,所以不需要硬偏置或交换偏置层。 自固定层叠层具有至少两个铁磁膜,其通过薄的反铁磁(AF)耦合膜彼此反铁磁耦合。 由于该层压层中的两个铁磁膜的磁矩反平行取向,所以通过使两个铁磁膜的厚度基本相同,可以使它们的两个磁矩基本抵消。 由作用在该层叠层上的信号场产生的磁场能量将显着小于层压层的有效各向异性能量。 这是因为前者与层叠层中的两个铁磁膜的厚度差成比例,而后者与厚度之和成比例。 结果,叠层在信号场的存在下不会旋转,而是“自固定”。 先前为钉扎所需的消除交换偏置层也消除了对Ni-Mn及其相关高温工艺的需要。

    Magnetoresistive spin valve sensor having a nonmagnetic back layer
    2.
    发明授权
    Magnetoresistive spin valve sensor having a nonmagnetic back layer 失效
    具有非磁性背层的磁阻自旋阀传感器

    公开(公告)号:US5422571A

    公开(公告)日:1995-06-06

    申请号:US14981

    申请日:1993-02-08

    摘要: A magnetoresistive read sensor based on the spin valve effect in which a component of the read element resistance varies as the cosine of the angle between the magnetization directions in two adjacent magnetic layers is described. The sensor read element includes two adjacent ferromagnetic layers separated by a nonmagnetic metallic layer. A layer of nonmagnetic electrically conductive material is deposited adjacent to and in contact with one of the ferromagnetic layers, referred to as a filter layers to form a back or conduction layer which provides a low resistance path for conduction electrons transmitted through the adjacent filter layer. The thickness of the filter layer is selected such that it effectively blocks conduction electrons having spins antiparallel to the direction of magnetization in the filter layer while allowing conduction electrons with parallel spins to be transmitted through the layer into the adjacent back layer. The magnetization of the filter layer is free to rotate in response to an applied magnetic field thereby effectively varying the electrically resistance to conduction electrons in the back/filter layer. The thickness of the back layer is selected to optimize the sensor parameters being measured and is in a range of about 4.0 A to 1000 A.

    摘要翻译: 基于自旋阀效应的磁阻读取传感器,其中读取元件电阻的分量随着两个相邻磁性层中的磁化方向之间的角度的余弦而变化。 传感器读取元件包括由非磁性金属层隔开的两个相邻的铁磁层。 一层非磁性导电材料沉积在一个铁磁层附近并与之接触,被称为过滤层,以形成背面或导电层,该导电层为通过相邻的过滤层传导的传导电子提供低电阻路径。 选择滤光层的厚度,使得其有效地阻挡具有与滤光层中的磁化方向反平行的传导的传导电子,同时允许具有平行自旋的传导电子通过该层传输到相邻的背层中。 过滤层的磁化响应于施加的磁场而自由旋转,从而有效地改变后/过滤层中的传导电子的电阻。 选择背层的厚度以优化被测量的传感器参数,并且在约4.0A至1000A的范围内。

    MR read transducer with thermal noise cancellation
    3.
    发明授权
    MR read transducer with thermal noise cancellation 失效
    MR读取具有热噪声消除的换能器

    公开(公告)号:US5420736A

    公开(公告)日:1995-05-30

    申请号:US228046

    申请日:1994-04-15

    摘要: Three leads L1, L2, and L3 connected to an MR stripe of an MR read transducer are arranged in a circuit for eliminating: (1) thermal asperity noise, (2) damage from shorting from the transducer to a magnetic medium, and (3) signal reduction from shorting between the conductive layers of the transducer at the ABS. The first and second leads L1 and L2 are connected to the MR stripe adjacent its top edge and the third lead L3 is connected to the MR stripe adjacent its bottom edge, the bottom edge being at the ABS of the transducer. A current of equal magnitude is applied to each of the first and second leads to flow at an angle from each of these leads to the third lead L3, this angle being preferably 45.degree. to the longitudinal axis or ABS of the MR stripe. A differential preamplifier is connected across the first and second leads L1 and L2. With this arrangement, thermal asperity noise is cancelled by common mode rejection at the differential preamplifier. The third lead L3 and the support device for a magnetic medium are grounded to prevent sensor damage from shorting between these components. The third lead also electrically interconnects the MR stripe to one of the shield layers S1 or S2 and both shield layers are grounded to prevent signal loss from shorting between these conductive layers at the ABS.

    摘要翻译: 连接到MR读取传感器的MR条的三个引线L1,L2和L3布置在一个电路中,用于消除:(1)热凹凸噪声,(2)从换能器短路到磁介质的损坏,(3) )信号从ABS处的换能器的导电层之间的短路引起的信号减少。 第一和第二引线L1和L2连接到邻近其顶部边缘的MR条带,并且第三引线L3连接到邻近其底部边缘的MR条带,底部边缘位于换能器的ABS处。 相同大小的电流被施加到第一和第二引线中的每一个以一定角度从这些引线流向第三引线L3,该角度优选地相对于MR条纹的纵轴或ABS为45°。 差分前置放大器连接在第一和第二引线L1和L2两端。 利用这种布置,差分前置放大器的共模抑制消除了热粗糙度噪声。 第三引线L3和用于磁介质的支撑装置接地以防止传感器损坏这些部件之间的短路。 第三引线还将MR条纹与屏蔽层S1或S2中的一个电互连,并且两个屏蔽层都被接地,以防止ABS处的这些导电层之间的信号丢失。

    Thin film magnetoresistive head with reduced lead-shield shorting
    4.
    发明授权
    Thin film magnetoresistive head with reduced lead-shield shorting 失效
    薄膜磁阻头减少铅屏蔽短路

    公开(公告)号:US5557492A

    公开(公告)日:1996-09-17

    申请号:US400689

    申请日:1995-03-08

    IPC分类号: G11B5/31 G11B5/39 G11B5/40

    摘要: A magnetoresistive head is provided which includes a magnetoresistive thin film sensing element. The sensing element has film surfaces which are bounded by top and bottom surfaces and side surfaces, the bottom surface forming a portion of an air bearing surface. First and second thin film gap layers and first and second thin film shield layers are provided. The magnetoresistive element and between the first and second gap layers. The magnetoresistive element, the first and second gap layers are located between the first and second shield layers. One end of the MR element is electrically shorted to the first shield layer, and an opposite end of the MR element is electrically shorted to the second shield layer. This arrangement makes each shield layer serve as current carrying leads for the magnetoresistive head. By eliminating prior art current carrying lead layers, the electrical shorting problem is minimized because the gap insulation between the shields is twice the thickness of the gap insulation between the leads and the shields of prior art heads.

    摘要翻译: 提供了一种包括磁阻薄膜感测元件的磁阻头。 感测元件具有由顶表面和底表面和侧表面限定的膜表面,底表面形成空气轴承表面的一部分。 提供第一和第二薄膜间隙层以及第一和第二薄膜屏蔽层。 磁阻元件和第一和第二间隙层之间。 磁阻元件,第一和第二间隙层位于第一和第二屏蔽层之间。 MR元件的一端与第一屏蔽层电短路,并且MR元件的相对端与第二屏蔽层电短路。 这种布置使得每个屏蔽层用作磁阻头的载流导线。 通过消除现有技术的电流导电层,电短路问题最小化,因为屏蔽之间的间隙绝缘是引线与现有技术磁头的屏蔽之间的间隙绝缘的厚度的两倍。

    Design and fabrication methods of partial cladded write line to enhance write margin for magnetic random access memory
    5.
    发明申请
    Design and fabrication methods of partial cladded write line to enhance write margin for magnetic random access memory 有权
    部分包层写入线的设计和制造方法,以增强磁随机存取存储器的写入裕度

    公开(公告)号:US20110062536A1

    公开(公告)日:2011-03-17

    申请号:US12584952

    申请日:2009-09-15

    IPC分类号: H01L29/82 H01L21/00

    摘要: A cladding structure for a conductive line used to switch a free layer in a MTJ is disclosed and includes two cladding sidewalls on two sides of the conductive line, a top cladding portion on a side of the conductive line facing away from the MTJ, and a highly conductive, non-magnetic spacing control layer formed between the MTJ and conductive line. The spacing control layer has a thickness of 0.02 to 0.12 microns to maintain the distance separating free layer and conductive line between 0.03 and 0.15 microns. The spacing control layer is aligned parallel to the conductive line and contacts a plurality of MTJ elements in a row of MRAM cells. Half-select error problems are avoided while maintaining high write efficiency. A spacing control layer may be formed between a word line and a bottom electrode in a top pinned layer or dual pinned layer configuration.

    摘要翻译: 公开了用于切换MTJ中的自由层的用于导电线的包层结构,并且在导电线的两侧包括两个包层侧壁,在远离MTJ的导电线侧的顶部包层部分,以及 在MTJ和导线之间形成的高导电性,非磁性间隔控制层。 间隔控制层的厚度为0.02至0.12微米,以保持分离自由层和导电线之间的距离在0.03和0.15微米之间。 间隔控制层平行于导线对准,并接触一排MRAM单元中的多个MTJ元件。 避免半选择错误问题,同时保持较高的写入效率。 间隔控制层可以形成在顶部钉扎层或双重钉扎层构造中的字线和底部电极之间。

    Controlled saturation thin film magnetic write head
    6.
    发明授权
    Controlled saturation thin film magnetic write head 失效
    受控饱和薄膜磁写头

    公开(公告)号:US5600519A

    公开(公告)日:1997-02-04

    申请号:US399781

    申请日:1995-03-06

    CPC分类号: G11B5/3116

    摘要: A thin film magnetic head in which the width of the first and second magnetic yoke layers between the zero throat point and the yoke flare point is progressively widened to equalize the flux density over this length so that the whole length reaches saturation simultaneously at a single current. Consequently, the field at the gap at the air bearing surface increases insignificantly once saturation of this length occurs, and the write field is then constant for currents above the saturation value.

    摘要翻译: 一个薄膜磁头,其中在零喉点和磁轭扩张点之间的第一和第二磁轭层的宽度被逐渐加宽以使该长度上的磁通密度相等,使得整个长度在单个电流下同时达到饱和 。 因此,一旦出现该长度的饱和,空气轴承表面间隙处的磁场就不会显着增加,而对于高于饱和值的电流而言,写入场是恒定的。

    Magnetic disk drive with electrical shorting protection
    7.
    发明授权
    Magnetic disk drive with electrical shorting protection 失效
    具有电气短路保护的磁盘驱动器

    公开(公告)号:US5375022A

    公开(公告)日:1994-12-20

    申请号:US103500

    申请日:1993-08-06

    IPC分类号: G11B5/39 G11B5/40 G11B19/04

    CPC分类号: G11B5/3903 G11B19/04 G11B5/40

    摘要: A thin film magnetoresistive head is provided which has a magnetoresistive thin film sensing element. The film surfaces of the sensing element are bounded by top and bottom surfaces and a pair of side surfaces, the bottom surface forming a portion of an air-bearing surface. First and second sense current thin film lead layers are provided. The first lead layer is electrically connected to the top surface of the magnetoresistive element and the second lead layer is electrically connected to the bottom surface of the magnetoresistive element. First and second gap layers and first and second shield layers are provided. The magnetoresistive element is located between the first and second gap layers. The magnetoresistive element, the lead layers, and the first and second gap layers are located between the first and second shield layers. Provision is made for electrically connecting the second lead layer to the second shield layer and provision is made for electrically connecting the first and second shield layers. With this arrangement, shorting between the layers at the air-bearing surface of the head is overcome. Further, by proper electrical connection of these components to a turntable, electrical shorting between the head, at the air-bearing surface, and the surface of a magnetic disk rotating therebelow is overcome.

    摘要翻译: 提供了具有磁阻薄膜感测元件的薄膜磁阻头。 感测元件的膜表面由顶表面和底表面以及一对侧表面限定,底表面形成空气轴承表面的一部分。 提供第一和第二感测电流薄膜引线层。 第一引线层电连接到磁阻元件的顶表面,并且第二引线层电连接到磁阻元件的底表面。 提供第一和第二间隙层以及第一和第二屏蔽层。 磁阻元件位于第一和第二间隙层之间。 磁阻元件,引线层以及第一和第二间隙层位于第一和第二屏蔽层之间。 提供了将第二引线层电连接到第二屏蔽层,并且提供用于电连接第一和第二屏蔽层。 利用这种布置,克服了在头部的空气轴承表面处的层之间的短路。 此外,通过将这些部件适当地电连接到转盘,克服了头部之间,空气轴承表面和其下方旋转的磁盘的表面之间的电短路。

    Three pole single element magnetic read/write head
    8.
    发明授权
    Three pole single element magnetic read/write head 失效
    三极单元磁读/写头

    公开(公告)号:US4644432A

    公开(公告)日:1987-02-17

    申请号:US695647

    申请日:1985-01-28

    申请人: David E. Heim

    发明人: David E. Heim

    摘要: A magnetic head has three pole pieces that form a magnetic circuit. The magnetic pole pieces are arranged in a common plane so that the two outside pole pieces are each spaced from the central pole piece to form a transducing gap between each of the outside pole pieces and the central pole piece. A first and a second coil, each having the same magnetic sense, is wound on the magnetic structure between an outside and the center pole piece. The coils are connected in series for a write operation so that the flux in the outside pole pieces is additive for writing, and the coils are connected in series opposition for a read operation so that the flux produced in the center pole by a previously recorded magnetic transition in the magnetic recording medium adjacent to the transducing gaps is sensed additively in the coils.

    摘要翻译: 磁头具有形成磁路的三个极片。 磁极片布置在公共平面中,使得两个外部极片与中心极片分开,以在每个外部极片和中心极片之间形成换能间隙。 每个具有相同磁感的第一和第二线圈缠绕在外部和中心极片之间的磁性结构上。 线圈串联连接用于写入操作,使得外部极片中的磁通量是相加的用于写入,并且线圈串联连接用于读取操作,使得在中心极处产生的磁通由先前记录的磁 在线圈中相加地感测与传感间隙相邻的磁记录介质中的过渡。

    Magnetic storage system with canted hardbias magnetoresistive head
    9.
    发明授权
    Magnetic storage system with canted hardbias magnetoresistive head 失效
    磁性存储系统,带有倾斜硬质磁阻头

    公开(公告)号:US5638235A

    公开(公告)日:1997-06-10

    申请号:US735044

    申请日:1996-10-22

    IPC分类号: G11B5/11 G11B5/39 G11B5/127

    CPC分类号: G11B5/3932 G11B5/399

    摘要: A magnetic storage system in which a magnetoresistive (MR) transducer utilizes a high coercivity magnetic material to produce a bias field for achieving higher signal output with low currents for narrow track width applications. Strips of high coercivity magnetic material contiguously contact opposite track-overlying edges of an MR layer. Each strip has a horizontal component of magnetization times its thickness that is at least equal to a horizontal component of magnetization of the MR layer times its thickness before the MR layer is biased by the strips, and each strip has its magnetization direction canted at an angle .phi. from its horizontal component. The MR layer is asymmetrically positioned between spaced magnetic shields and the MR layer is separated by a conductive nonmagnetic spacer layer from a shunt layer. Alternatively, the shunt layer is replaced by a reduced thickness soft film layer and the MR layer is centered between the shields and the strips also contiguously contact track overlying edges of the soft film layer.

    摘要翻译: 一种磁存储系统,其中磁阻(MR)传感器利用高矫顽力磁性材料产生偏置场,以实现用于窄轨宽度应用的低电流的较高信号输出。 高矫顽力磁性材料的条带连续地接触MR层的相对的轨迹上缘。 每个条带具有磁化的水平分量,其厚度至少等于MR层的磁化的水平分量乘以其厚度,之后MR层被条带偏置,并且每个条带具有以一定角度倾斜的磁化方向 phi从其水平分量。 MR层不对称地位于间隔的磁屏蔽之间,并且MR层由分流层的导电非磁性间隔层隔开。 或者,分流层由减薄厚度的软膜层代替,并且MR层在屏蔽件和条带之间居中并且也连续地接触软膜层的轨道上覆边缘。

    Magnetoresistive sensor with flux keepered spin valve configuration
    10.
    发明授权
    Magnetoresistive sensor with flux keepered spin valve configuration 失效
    具有助焊剂自旋阀配置的磁阻传感器

    公开(公告)号:US5508867A

    公开(公告)日:1996-04-16

    申请号:US349763

    申请日:1994-12-05

    摘要: A magnetoresistive (MR) sensing system comprises an MR sensor with a layered spin valve structure including thin first and second layers of ferromagnetic material separated by a thin layer of nonmagnetic metallic material. The magnetization direction of the first layer at a zero applied magnetic field is substantially parallel to the longitudinal dimension of the MR sensor and substantially perpendicular to the fixed or "pinned" magnetization direction of the second layer. A thin keeper layer of ferromagnetic material is separated by a thin spacer layer from the layered spin valve structure. This keeper layer has a fixed magnetization direction substantially opposite that of the second layer and a moment-thickness product substantially equal to that of the second layer for cancelling the magnetostatic field from the second layer. A current flow is produced through the MR sensor to produce a magnetic field of a sign and magnitude which cancels the ferromagnetic exchange coupling between the first and second layers. Variations in resistivity of the MR sensor due to difference in rotation of the magnetizations in the first and second layers are sensed as a function of the magnetic field being sensed.

    摘要翻译: 磁阻(MR)感测系统包括具有分层自旋阀结构的MR传感器,其包括由非磁性金属材料的薄层隔开的薄的第一和第二层铁磁材料。 在零施加磁场处的第一层的磁化方向基本上平行于MR传感器的纵向尺寸并且基本上垂直于第二层的固定或“固定”磁化方向。 铁磁材料的薄的保持层由薄的间隔层与分层自旋阀结构隔开。 该保持层具有与第二层基本上相反的固定磁化方向,以及基本上等于第二层的力矩厚度乘积,用于抵消来自第二层的静磁场。 通过MR传感器产生电流,以产生抵消第一和第二层之间的铁磁交换耦合的符号和幅度的磁场。 作为感测的磁场的函数,感测由于第一层和第二层中的磁化的旋转差异导致的MR传感器的电阻率变化。