公开(公告)号：US06759179B1

公开(公告)日：2004-07-06

申请号：US10050417

申请日：2002-01-16

申请人： Khoi A. Phan ,  Jeffrey Erhardt ,  Jerry Cheng ,  Richard J. Bartlett ,  Anthony P. Coniglio ,  Wolfram Grundke ,  Carol M. Bradway ,  Daniel E. Sutton ,  Martin Mazur

发明人： Khoi A. Phan ,  Jeffrey Erhardt ,  Jerry Cheng ,  Richard J. Bartlett ,  Anthony P. Coniglio ,  Wolfram Grundke ,  Carol M. Bradway ,  Daniel E. Sutton ,  Martin Mazur

IPC分类号： G03F720

CPC分类号： G03F7/168 ,  G03F7/3021 ,  H01L21/0274 ,  H01L21/28035 ,  H01L21/32139

摘要： Methods and systems are disclosed for reducing resist residue defects in a semiconductor manufacturing process. The methods comprise appropriate adjustment of hardware, substrate, resist, developer, and process variables in order to remove resist residues from a semiconductor substrate structure in order to reduce resist residue defects therein, including special vapor prime and development operations.

摘要翻译： 公开了用于减少半导体制造工艺中的抗蚀剂残留缺陷的方法和系统。 这些方法包括硬件，基板，抗蚀剂，显影剂和工艺变量的适当调整，以便从半导体衬底结构去除抗蚀剂残留物，以减少其中的抗蚀剂残留缺陷，包括特殊的气相和显影操作。

公开(公告)号：US06649525B1

公开(公告)日：2003-11-18

申请号：US10050485

申请日：2002-01-16

申请人： Khoi A. Phan ,  Jeffrey Erhardt ,  Jerry Cheng ,  Richard J. Bartlett ,  Anthony P. Coniglio ,  Wolfram Grundke ,  Carol M. Bradway ,  Daniel E. Sutton ,  Martin Mazur

发明人： Khoi A. Phan ,  Jeffrey Erhardt ,  Jerry Cheng ,  Richard J. Bartlett ,  Anthony P. Coniglio ,  Wolfram Grundke ,  Carol M. Bradway ,  Daniel E. Sutton ,  Martin Mazur

IPC分类号： H01L21461

CPC分类号： G03F7/16 ,  G03F7/30 ,  G03F7/40 ,  H01L21/0274 ,  H01L21/32139

摘要： Methods and systems are disclosed for reducing resist residue defects in a semiconductor manufacturing process. The methods comprise appropriate adjustment of hardware, substrate, resist, developer, and process variables in order to remove resist residues from a semiconductor substrate structure in order to reduce resist residue defects therein. The method may comprise employing an anti reflective coating prior to applying a photo resist coating in a semiconductor manufacturing process. Also disclosed are methodologies for exhausting resist residue during development via a rinsing fluid.

摘要翻译： 公开了用于减少半导体制造工艺中的抗蚀剂残留缺陷的方法和系统。 这些方法包括硬件，衬底，抗蚀剂，显影剂和工艺变量的适当调整，以便从半导体衬底结构去除抗蚀剂残留物，以减少其中的抗蚀剂残留缺陷。 该方法可以包括在半导体制造工艺中施加光致抗蚀剂涂层之前采用抗反射涂层。 还公开了通过冲洗流体在显影期间排出抗蚀剂残留物的方法。

公开(公告)号：US06524869B1

公开(公告)日：2003-02-25

申请号：US09780178

申请日：2001-02-09

申请人： Michael J. Satterfield ,  Laura A. Pressley ,  Terri A. Couteau ,  Daniel E. Sutton ,  Bryon K. Hance ,  David Hendrix

发明人： Michael J. Satterfield ,  Laura A. Pressley ,  Terri A. Couteau ,  Daniel E. Sutton ,  Bryon K. Hance ,  David Hendrix

IPC分类号： H01L2166

CPC分类号： H01L22/12

摘要： Various methods and apparatus are provided for testing an ion implantation tool. In one aspect, a method of testing an ion implanter is provided that includes forming a mask with a preselected pattern on a substrate. An ion implant is performed on the mask with the ion implanter. Following the ion implant, a scan of the mask is performed to identify any defects thereon. Defects appearing on the mask following the implant are indicative of latent mechanisms at work within the implanter. Ion implanter induced defects may be economically analyzed.

摘要翻译： 提供了用于测试离子注入工具的各种方法和装置。 一方面，提供了一种测试离子注入机的方法，其包括在衬底上形成具有预选图案的掩模。 用离子注入机在掩模上进行离子注入。 在离子注入之后，执行掩模的扫描以识别其上的任何缺陷。 在植入物之后出现在掩模上的缺陷表示在注入机内工作的潜在机制。 离子注入机诱导的缺陷可能经济分析。

公开(公告)号：US06440621B1

公开(公告)日：2002-08-27

申请号：US09703081

申请日：2000-10-31

申请人： Daniel E. Sutton ,  Christopher H. Lansford

发明人： Daniel E. Sutton ,  Christopher H. Lansford

IPC分类号： G03F900

CPC分类号： H01L22/24 ,  G01N21/91 ,  G01N21/9501 ,  G01N21/9505 ,  G03F7/00

摘要： Various methods of inspecting a semiconductor workpiece for defects are provided. In one aspect, a method of inspecting a surface of a semiconductor workpiece for defects is provided that includes applying a negative-tone photoresist film to the surface and baking the negative-tone photoresist film to release solvent therefrom and to facilitate release of catalyzing substances held by the defects into the negative-tone photoresist film. The catalyzing substances react chemically with at least one moiety of the photoresist film to thereby lower the solubility of one or more portions of the negative-tone photoresist film in a developer. The negative-tone photoresist film is developed with the developer and the surface is inspected for the portions of the negative-tone photoresist film remaining after the developing process. The remaining portions of the negative-tone photoresist film are indicative of the locations of the defects.

摘要翻译： 提供了检测半导体工件的缺陷的各种方法。 一方面，提供了一种检查半导体工件表面的缺陷的方法，其中包括将负色调光致抗蚀剂膜施加到表面上并烘烤负色光致抗蚀剂膜以从其中释放溶剂并促进所保持的催化物质的释放 通过缺陷进入负光致抗蚀剂膜。 催化物质与光致抗蚀剂膜的至少一个部分发生化学反应，从而降低负性光致抗蚀剂膜在显影剂中的一个或多个部分的溶解度。 负色调光致抗蚀剂膜用显影剂显影，并且在显影过程之后检查保留的负色调光致抗蚀剂膜的部分的表面。 负色调光致抗蚀剂膜的其余部分指示缺陷的位置。