公开(公告)号：US20160197081A1

公开(公告)日：2016-07-07

申请号：US15072521

申请日：2016-03-17

申请人： Ki-Yeon Park ,  Jae-Hyoung CHOI ,  Vladimir URAZAEV ,  Jin-Ha JEONG

发明人： Ki-Yeon Park ,  Jae-Hyoung CHOI ,  Vladimir URAZAEV ,  Jin-Ha JEONG

IPC分类号： H01L27/108 ,  H01L21/283 ,  H01L49/02 ,  H01L21/311 ,  H01L21/768

CPC分类号： H01L27/1085 ,  H01L21/283 ,  H01L21/311 ,  H01L21/76802 ,  H01L27/108 ,  H01L27/10852 ,  H01L28/60 ,  H01L28/92

摘要： Provided are semiconductor devices and methods of fabricating the same. The methods may include forming a molding layer on a semiconductor substrate. A storage electrode passing through the molding layer is formed. A part of the storage electrode is exposed by partially etching the molding layer. A sacrificial oxide layer is formed by oxidizing the exposed part of the storage electrode. The partially-etched molding layer and the sacrificial oxide layer are removed. A capacitor dielectric layer is formed on the substrate of which the molding layer and the sacrificial oxide layer are removed. A plate electrode is formed on the capacitor dielectric layers.