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    Three dimensional semiconductor memory devices and methods of fabricating the same
    2.
    发明授权
    Three dimensional semiconductor memory devices and methods of fabricating the same 有权
    三维半导体存储器件及其制造方法

    公开(公告)号：US08809943B2

    公开(公告)日：2014-08-19

    申请号：US13456552

    申请日：2012-04-26

    申请人： Jin-Soo Lim ,  Vladimir Urazaev ,  Jin Ha Jeong ,  Hansoo Kim ,  Heayun Lee

    发明人： Jin-Soo Lim ,  Vladimir Urazaev ,  Jin Ha Jeong ,  Hansoo Kim ,  Heayun Lee

    IPC分类号： H01L29/66

    CPC分类号： H01L27/0688 ,  H01L27/11582 ,  H01L29/7926

    摘要： A three dimensional semiconductor memory device includes an electrode structure having a plurality of conductive electrode patterns and insulating patterns alternatingly stacked on a substrate. Opposite sidewalls of the electrode structure include respective grooves therein extending in a direction substantially perpendicular to the substrate. First and second active patterns protrude from the substrate and extend within the grooves in the opposite sidewalls of the electrode structure, respectively. Respective data storing layers extend in the grooves between the conductive electrode patterns of the electrode structure and sidewalls of the first and second active patterns adjacent thereto. Related fabrication methods are also discussed.

    摘要翻译： 三维半导体存储器件包括具有交替层叠在基板上的多个导电电极图案和绝缘图案的电极结构。 电极结构的相对侧壁包括各自的凹槽，其沿基本上垂直于衬底的方向延伸。 第一和第二有源图案从基板突出并分别在电极结构的相对侧壁中的槽内延伸。 相应的数据存储层在电极结构的导电电极图案和与其相邻的第一和第二活动图案的侧壁之间的凹槽中延伸。 还讨论了相关的制造方法。

    Exposure systems for integrated circuit fabrication
    3.
    发明授权
    Exposure systems for integrated circuit fabrication 有权
    用于集成电路制造的曝光系统

    公开(公告)号：US08563951B2

    公开(公告)日：2013-10-22

    申请号：US13419761

    申请日：2012-03-14

    申请人： Jin Choi ,  Jin-Ha Jeong ,  Vladimir Urazaev ,  Hea-Yun Lee

    发明人： Jin Choi ,  Jin-Ha Jeong ,  Vladimir Urazaev ,  Hea-Yun Lee

    IPC分类号： G21K5/04

    CPC分类号： G03F1/78 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/09 ,  H01J37/3026 ,  H01J37/3174 ,  H01J2237/0455 ,  H01J2237/30472 ,  H01J2237/31776

    摘要： Exposure systems include a beam generator, which is configured to irradiate source beams in a direction of an object to be exposed by the source beams, along with first and second beam shapers. The first beam shaper, which is disposed proximate the beam generator, has a first aperture therein positioned to pass through the source beams received from the beam generator. The second beam shaper is disposed proximate the first beam shaper. The second beam shaper includes a plate having a second aperture therein, which is positioned to receive the source beams that are passed through the first aperture of the first beam shaper. The second beam shaper further includes a first actuator and a first shift screen mechanically coupled to the first actuator.

    摘要翻译： 曝光系统包括光束发生器，其被配置成沿着第一和第二光束整形器照射源光束的待曝光物体的方向上的光源射束。 设置在光束发生器附近的第一光束整形器具有其中定位成穿过从光束发生器接收的源光束的第一孔。 第二光束整形器靠近第一光束整形器设置。 第二光束整形器包括其中具有第二孔的板，其被定位成接收穿过第一光束整形器的第一孔的源光束。 第二光束整形器还包括机械耦合到第一致动器的第一致动器和第一移位屏幕。

    Refrigerator and method to control the same
    4.
    发明授权
    Refrigerator and method to control the same 失效
    冰箱和方法控制相同

    公开(公告)号：US07908876B2

    公开(公告)日：2011-03-22

    申请号：US12073714

    申请日：2008-03-07

    申请人： Young Shik Shin ,  Vladimir Urazaev ,  Jin Ha Jeong ,  Jung Soo Lim ,  Bong Su Son

    发明人： Young Shik Shin ,  Vladimir Urazaev ,  Jin Ha Jeong ,  Jung Soo Lim ,  Bong Su Son

    IPC分类号： F25D21/00

    CPC分类号： F25D23/12 ,  F25D17/065 ,  F25D2317/061 ,  F25D2317/0665 ,  F25D2400/02 ,  F25D2400/06 ,  F25D2700/08 ,  F25D2700/121 ,  F25D2700/16

    摘要： A refrigerator and a method to control the same are provided. The refrigerator includes a body having a supercooling compartment, a cooling unit to provide cool air to the supercooling compartment, an electromagnetic radiation sensor to detect electromagnetic radiation emitted when a food placed in the supercooling compartment begins to freeze, an energy supply to apply energy to the food placed in the supercooling compartment to prevent freezing of the food, and a controller to receive a detection signal from the electromagnetic radiation and then to activate the energy supply. Electromagnetic radiation emitted from each beverage in a supercooled state when the beverage begins to freeze is detected and energy is applied to the beverage according to the detection.

    摘要翻译： 提供了一种冰箱及其控制方法。 冰箱包括具有过冷室的主体，向过冷室提供冷空气的冷却单元，用于检测放置在过冷室内的食品开始冷冻时发射的电磁辐射的电磁辐射传感器，将能量施加到 放置在过冷室中的食物防止食物冻结，以及控制器，接收来自电磁辐射的检测信号，然后激活能量供应。 检测当饮料开始冷冻时从过冷状态发出的每种饮料的电磁辐射，并根据检测将能量施加到饮料上。

    Methods of fabricating vertical semiconductor device utilizing phase changes in semiconductor materials
    6.
    发明授权
    Methods of fabricating vertical semiconductor device utilizing phase changes in semiconductor materials 有权
    使用半导体材料相变的垂直半导体器件的制造方法

    公开(公告)号：US08236673B2

    公开(公告)日：2012-08-07

    申请号：US13024924

    申请日：2011-02-10

    申请人： Yong-hoon Son ,  Jin-ha Jeong ,  Jung-ho Kim ,  Vladimir Urazaev ,  Jong-hyuk Kang ,  Sung-woo Hyun

    发明人： Yong-hoon Son ,  Jin-ha Jeong ,  Jung-ho Kim ,  Vladimir Urazaev ,  Jong-hyuk Kang ,  Sung-woo Hyun

    IPC分类号： H01L21/20

    CPC分类号： H01L21/20

    摘要： A method of fabricating a vertical NAND semiconductor device can include changing a phase of a first preliminary semiconductor layer in an opening from solid to liquid to form a first single crystalline semiconductor layer in the opening and then forming a second preliminary semiconductor layer on the first single crystalline semiconductor layer. The phase of the second preliminary semiconductor layer is changed from solid to liquid to form a second single crystalline semiconductor layer that combines with the first single crystalline semiconductor layers to form a single crystalline semiconductor layer in the opening.

    摘要翻译： 制造垂直NAND半导体器件的方法可以包括将开口中的第一初级半导体层的相位从固体改变为在开口中形成第一单晶半导体层，然后在第一单个晶体管上形成第二初步半导体层 晶体半导体层。 第二初步半导体层的相位从固体变为液态，形成与第一单晶半导体层结合以在开口中形成单晶半导体层的第二单晶半导体层。

    METHODS OF FABRICATING VERTICAL SEMICONDUCTOR DEVICE UTILIZING PHASE CHANGES IN SEMICONDUCTOR MATERIALS
    7.
    发明申请
    METHODS OF FABRICATING VERTICAL SEMICONDUCTOR DEVICE UTILIZING PHASE CHANGES IN SEMICONDUCTOR MATERIALS 有权
    在半导体材料中利用相变的垂直半导体器件制造方法

    公开(公告)号：US20110217828A1

    公开(公告)日：2011-09-08

    申请号：US13024924

    申请日：2011-02-10

    申请人： Yong-hoon Son ,  Jin-ha Jeong ,  Jung-ho Kim ,  Vladimir Urazaev ,  Jong-hyuk Kang ,  Sung-woo Hyun

    发明人： Yong-hoon Son ,  Jin-ha Jeong ,  Jung-ho Kim ,  Vladimir Urazaev ,  Jong-hyuk Kang ,  Sung-woo Hyun

    IPC分类号： H01L21/20

    CPC分类号： H01L21/20

    摘要： A method of fabricating a vertical NAND semiconductor device can include changing a phase of a first preliminary semiconductor layer in an opening from solid to liquid to form a first single crystalline semiconductor layer in the opening and then forming a second preliminary semiconductor layer on the first single crystalline semiconductor layer. The phase of the second preliminary semiconductor layer is changed from solid to liquid to form a second single crystalline semiconductor layer that combines with the first single crystalline semiconductor layers to form a single crystalline semiconductor layer in the opening.

    摘要翻译： 制造垂直NAND半导体器件的方法可以包括将开口中的第一初级半导体层的相位从固体改变为在开口中形成第一单晶半导体层，然后在第一单个晶体管上形成第二初步半导体层 晶体半导体层。 第二初步半导体层的相位从固体变为液态，形成与第一单晶半导体层结合以在开口中形成单晶半导体层的第二单晶半导体层。

    Refrigerator and method to control the same
    8.
    发明申请
    Refrigerator and method to control the same 失效
    冰箱和方法控制相同

    公开(公告)号：US20080245081A1

    公开(公告)日：2008-10-09

    申请号：US12073714

    申请日：2008-03-07

    申请人： Young Shik Shin ,  Vladimir Urazaev ,  Jin Ha Jeong ,  Jung Soo Lim ,  Bong Su Son

    发明人： Young Shik Shin ,  Vladimir Urazaev ,  Jin Ha Jeong ,  Jung Soo Lim ,  Bong Su Son

    IPC分类号： F25D21/00 ,  F25D21/02 ,  F25D23/00 ,  G05B15/00

    CPC分类号： F25D23/12 ,  F25D17/065 ,  F25D2317/061 ,  F25D2317/0665 ,  F25D2400/02 ,  F25D2400/06 ,  F25D2700/08 ,  F25D2700/121 ,  F25D2700/16

    摘要： A refrigerator and a method to control the same are provided. The refrigerator includes a body having a supercooling compartment, a cooling unit to provide cool air to the supercooling compartment, an electromagnetic radiation sensor to detect electromagnetic radiation emitted when a food placed in the supercooling compartment begins to freeze, an energy supply to apply energy to the food placed in the supercooling compartment to prevent freezing of the food, and a controller to receive a detection signal from the electromagnetic radiation and then to activate the energy supply. Electromagnetic radiation emitted from each beverage in a supercooled state when the beverage begins to freeze is detected and energy is applied to the beverage according to the detection.

    摘要翻译： 提供了一种冰箱及其控制方法。 冰箱包括具有过冷室的主体，向过冷室提供冷空气的冷却单元，用于检测放置在过冷室内的食品开始冷冻时发射的电磁辐射的电磁辐射传感器，将能量施加到 放置在过冷室中的食物防止食物冻结，以及控制器，接收来自电磁辐射的检测信号，然后激活能量供应。 检测当饮料开始冷冻时从过冷状态发出的每种饮料的电磁辐射，并根据检测将能量施加到饮料上。

    Three Dimensional Semiconductor Memory Devices and Methods of Fabricating the Same
    10.
    发明申请
    Three Dimensional Semiconductor Memory Devices and Methods of Fabricating the Same 有权
    三维半导体存储器件及其制造方法

    公开(公告)号：US20120273872A1

    公开(公告)日：2012-11-01

    申请号：US13456552

    申请日：2012-04-26

    申请人： Jin-Soo Lim ,  Vladimir Urazaev ,  Jin Ha Jeong ,  Hansoo Kim ,  Heayun Lee

    发明人： Jin-Soo Lim ,  Vladimir Urazaev ,  Jin Ha Jeong ,  Hansoo Kim ,  Heayun Lee

    IPC分类号： H01L29/78 ,  H01L27/088

    CPC分类号： H01L27/0688 ,  H01L27/11582 ,  H01L29/7926

    摘要： A three dimensional semiconductor memory device includes an electrode structure having a plurality of conductive electrode patterns and insulating patterns alternatingly stacked on a substrate. Opposite sidewalls of the electrode structure include respective grooves therein extending in a direction substantially perpendicular to the substrate. First and second active patterns protrude from the substrate and extend within the grooves in the opposite sidewalls of the electrode structure, respectively. Respective data storing layers extend in the grooves between the conductive electrode patterns of the electrode structure and sidewalls of the first and second active patterns adjacent thereto. Related fabrication methods are also discussed.

    摘要翻译： 三维半导体存储器件包括具有交替层叠在基板上的多个导电电极图形和绝缘图案的电极结构。 电极结构的相对侧壁包括各自的凹槽，其沿基本上垂直于衬底的方向延伸。 第一和第二有源图案从基板突出并分别在电极结构的相对侧壁中的槽内延伸。 相应的数据存储层在电极结构的导电电极图案和与其相邻的第一和第二活动图案的侧壁之间的凹槽中延伸。 还讨论了相关的制造方法。