公开(公告)号：US20060033050A1

公开(公告)日：2006-02-16

申请号：US11251807

申请日：2005-10-18

申请人： Kimiaki Ando ,  Haruo Yoda ,  Rikio Tomiyoshi ,  Masamichi Kawano

发明人： Kimiaki Ando ,  Haruo Yoda ,  Rikio Tomiyoshi ,  Masamichi Kawano

IPC分类号： G21K5/10

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/09 ,  H01J37/3174 ,  H01J2237/31776

摘要： In the case of drawing an oblique figure pattern, when drawing an oblique figure by using a slender rectangular beam, a problem occurs that edge roughness occurs at an oblique-side portion to deteriorate the drawing accuracy. The present invention solves the above problem and provides an electron-beam drawing apparatus and an electron-beam drawing method capable of accurately drawing even an oblique figure. A first rectangular aperture and a second parallelogrammatic aperture are used and a variable parallelogrammatic electron beam formed by two apertures is used to draw a desired pattern on the surface of a sample. Moreover, oblique-side-portion-contour decomposition means is used to draw an oblique-side portion by a variable parallelogram and the inside of an oblique side by a triangle and a quadrangle (rectangle).

摘要翻译： 在绘制斜图形图形的情况下，当使用细长矩形波束绘制斜图时，会出现在倾斜侧部分发生边缘粗糙度以降低绘图精度的问题。 本发明解决了上述问题，并且提供了能够精确地绘制斜图的电子束描绘装置和电子束描绘方法。 使用第一矩形孔和第二平行四边形孔，并且使用由两个孔形成的可变平行四边形电子束来在样品的表面上画出期望的图案。 此外，倾斜侧部分轮廓分解装置用于通过可变的平行四边形和斜边的内侧以三角形和四边形（矩形）绘制斜侧部分。

公开(公告)号：US08008622B2

公开(公告)日：2011-08-30

申请号：US12630346

申请日：2009-12-03

申请人： Ryo Fujita ,  Haruo Yoda ,  Kimiaki Ando ,  Yuji Inoue ,  Masato Muraki

发明人： Ryo Fujita ,  Haruo Yoda ,  Kimiaki Ando ,  Yuji Inoue ,  Masato Muraki

IPC分类号： H01J37/26

CPC分类号： H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J2237/31762 ,  H01J2237/31769

摘要： High-contrast exposure is performed by use of a small dose of electron beams, a pattern is formed on a wafer with high accuracy, and high-precision inspection is performed. In pattern formation, proximity effect correction processing is performed. Moreover, exposure of electron beams is performed based on a result of filtering using an inverse characteristic of exposure characteristics of the electron beams. Furthermore, in pattern inspection, electron beams are irradiated based on a result of filtering for obtaining a peripheral region of an edge of the pattern formed.

摘要翻译： 通过使用小剂量的电子束进行高对比度曝光，以高精度在晶片上形成图案，进行高精度检查。 在图案形成中，执行邻近效应校正处理。 此外，基于使用电子束的曝光特性的逆特性的滤波结果来执行电子束的曝光。 此外，在图案检查中，基于滤波结果照射电子束，以获得形成的图案的边缘的周边区域。

公开(公告)号：US06172363B2

公开(公告)日：2001-01-09

申请号：US08811511

申请日：1997-03-04

申请人： Hiroyuki Shinada ,  Mari Nozoe ,  Haruo Yoda ,  Kimiaki Ando ,  Katsuhiro Kuroda ,  Yutaka Kaneko ,  Maki Tanaka ,  Shunji Maeda ,  Hitoshi Kubota ,  Aritoshi Sugimoto ,  Katsuya Sugiyama ,  Atsuko Takafuji ,  Yusuke Yajima ,  Hiroshi Tooyama ,  Tadao Ino ,  Takashi Hiroi ,  Kazushi Yoshimura ,  Yasutsugu Usami

发明人： Hiroyuki Shinada ,  Mari Nozoe ,  Haruo Yoda ,  Kimiaki Ando ,  Katsuhiro Kuroda ,  Yutaka Kaneko ,  Maki Tanaka ,  Shunji Maeda ,  Hitoshi Kubota ,  Aritoshi Sugimoto ,  Katsuya Sugiyama ,  Atsuko Takafuji ,  Yusuke Yajima ,  Hiroshi Tooyama ,  Tadao Ino ,  Takashi Hiroi ,  Kazushi Yoshimura ,  Yasutsugu Usami

IPC分类号： H01J37244

CPC分类号： G01R31/305 ,  G01R31/307 ,  H01J37/28 ,  H01J2237/2817

摘要： A circuit pattern inspection method and an apparatus therefor, in which the whole of a portion to be inspected of a sample to be inspected is made to be in a predetermined charged state, the portion to be inspected is irradiated with an image-forming high-density electron beam while scanning the electron beam, secondary charged particles are detected at a portion irradiated with the electron beam after a predetermined period of time from an instance when the electron beam is irradiated, an image is formed on the basis of the thus detected secondary charged particle signal, and the portion to be inspected is inspected by using the thus formed image.

公开(公告)号：US07952074B2

公开(公告)日：2011-05-31

申请号：US12190388

申请日：2008-08-12

申请人： Hiroyuki Shinada ,  Mari Nozoe ,  Haruo Yoda ,  Kimiaki Ando ,  Katsuhiro Kuroda ,  Yutaka Kaneko ,  Maki Tanaka ,  Shunji Maeda ,  Hitoshi Kubota ,  Aritoshi Sugimoto ,  Katsuya Sugiyama ,  Atsuko Takafuji ,  Yusuke Yajima ,  Hiroshi Tooyama ,  Tadao Ino ,  Takashi Hiroi ,  Kazushi Yoshimura ,  Yasutsugu Usami

发明人： Hiroyuki Shinada ,  Mari Nozoe ,  Haruo Yoda ,  Kimiaki Ando ,  Katsuhiro Kuroda ,  Yutaka Kaneko ,  Maki Tanaka ,  Shunji Maeda ,  Hitoshi Kubota ,  Aritoshi Sugimoto ,  Katsuya Sugiyama ,  Atsuko Takafuji ,  Yusuke Yajima ,  Hiroshi Tooyama ,  Tadao Ino ,  Takashi Hiroi ,  Kazushi Yoshimura ,  Yasutsugu Usami

IPC分类号： G01N23/22

CPC分类号： G01R31/305 ,  G01R31/307 ,  H01J37/28 ,  H01J2237/2817

摘要： A circuit pattern inspection method and an apparatus therefore, in which the whole of a portion to be inspected of a sample to be inspected is made to be in a predetermined changed state, the portion to be inspected is irradiated with an image-forming high-density electron beam while scanning the electron beam, secondary charged particles are detected at a portion irradiated with the electron beam after a predetermined period of time from an instance when the electron beam is irradiated, an image is formed on the basis of the thus detected secondary charged particle signal, and the portion to be inspected is inspected by using the thus formed image.

摘要翻译： 因此，电路图案检查方法和其中待检查的样品的待检查部分的整体被制成处于预定的改变状态的装置，被检查部分被成像高分辨率照射， 在扫描电子束时，在从电子束照射的时刻起经过规定的时间后，在照射电子束的部分检测到二次带电粒子，根据这样检测的次级 通过使用如此形成的图像来检查带电粒子信号，并检查待检查的部分。

公开(公告)号：US20100078556A1

公开(公告)日：2010-04-01

申请号：US12630378

申请日：2009-12-03

申请人： Ryo Fujita ,  Haruo Yoda ,  Kimiaki Ando ,  Yuji Inoue ,  Masato Muraki

发明人： Ryo Fujita ,  Haruo Yoda ,  Kimiaki Ando ,  Yuji Inoue ,  Masato Muraki

IPC分类号： G01N23/00

CPC分类号： H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J2237/31762 ,  H01J2237/31769

摘要： High-contrast exposure is performed by use of a small dose of electron beams, a pattern is formed on a wafer with high accuracy, and high-precision inspection is performed. In pattern formation, proximity effect correction processing is performed. Moreover, exposure of electron beams is performed based on a result of filtering using an inverse characteristic of exposure characteristics of the electron beams. Furthermore, in pattern inspection, electron beams are irradiated based on a result of filtering for obtaining a peripheral region of an edge of the pattern formed.

摘要翻译： 通过使用小剂量的电子束进行高对比度曝光，以高精度在晶片上形成图案，进行高精度检查。 在图案形成中，执行邻近效应校正处理。 此外，基于使用电子束的曝光特性的逆特性的滤波结果来执行电子束的曝光。 此外，在图案检查中，基于滤波结果照射电子束，以获得形成的图案的边缘的周边区域。

公开(公告)号：US07635851B2

公开(公告)日：2009-12-22

申请号：US11519872

申请日：2006-09-13

申请人： Ryo Fujita ,  Haruo Yoda ,  Kimiaki Ando ,  Yuji Inoue ,  Masato Muraki

发明人： Ryo Fujita ,  Haruo Yoda ,  Kimiaki Ando ,  Yuji Inoue ,  Masato Muraki

IPC分类号： H01J37/08

CPC分类号： H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J2237/31762 ,  H01J2237/31769

摘要： High-contrast exposure is performed by use of a small dose of electron beams, a pattern is formed on a wafer with high accuracy, and high-precision inspection is performed. In pattern formation, proximity effect correction processing is performed. Moreover, exposure of electron beams is performed based on a result of filtering using an inverse characteristic of exposure characteristics of the electron beams. Furthermore, in pattern inspection, electron beams are irradiated based on a result of filtering for obtaining a peripheral region of an edge of the pattern formed.

摘要翻译： 通过使用小剂量的电子束进行高对比度曝光，以高精度在晶片上形成图案，进行高精度检查。 在图案形成中，执行邻近效应校正处理。 此外，基于使用电子束的曝光特性的逆特性的滤波结果来执行电子束的曝光。 此外，在图案检查中，基于滤波结果照射电子束，以获得形成的图案的边缘的周边区域。

公开(公告)号：US20080302964A1

公开(公告)日：2008-12-11

申请号：US12190388

申请日：2008-08-12

申请人： Hiroyuki Shinada ,  Mari Nozoe ,  Haruo Yoda ,  Kimiaki Ando ,  Katsuhiro Kuroda ,  Yutaka Kaneko ,  Maki Tanaka ,  Shunji Maeda ,  Hitoshi Kubota ,  Aritoshi Sugimoto ,  Katsuya Sugiyama ,  Atsuko Takafuji ,  Yusuke Yajima ,  Hiroshi Tooyama ,  Tadao Ino ,  Takashi Hiroi ,  Kazushi Yoshimura ,  Yasutsugu Usami

发明人： Hiroyuki Shinada ,  Mari Nozoe ,  Haruo Yoda ,  Kimiaki Ando ,  Katsuhiro Kuroda ,  Yutaka Kaneko ,  Maki Tanaka ,  Shunji Maeda ,  Hitoshi Kubota ,  Aritoshi Sugimoto ,  Katsuya Sugiyama ,  Atsuko Takafuji ,  Yusuke Yajima ,  Hiroshi Tooyama ,  Tadao Ino ,  Takashi Hiroi ,  Kazushi Yoshimura ,  Yasutsugu Usami

IPC分类号： G01N23/00 ,  G01R31/305

CPC分类号： G01R31/305 ,  G01R31/307 ,  H01J37/28 ,  H01J2237/2817

摘要： A circuit pattern inspection method and an apparatus therefor, in which the whole of a portion to be inspected of a sample to be inspected is made to be in a predetermined changed state, the portion to be inspected is irradiated with an image-forming high-density electron beam while scanning the electron beam, secondary charged particles are detected at a portion irradiated with the electron beam after a predetermined period of time from an instance when the electron beam is irradiated, an image is formed on the basis of the thus detected secondary charged particle signal, and the portion to be inspected is inspected by using the thus formed image.

摘要翻译： 电路图案检查方法及其装置，其中待检查的样品的待检查部分的整体部分处于预定的改变状态，被检查的部分用成像高分辨率照射， 在扫描电子束时，在从电子束照射的时刻起经过规定的时间后，在照射电子束的部分检测到二次带电粒子，根据这样检测的次级 通过使用如此形成的图像来检查带电粒子信号，并检查待检查的部分。

公开(公告)号：US20100078555A1

公开(公告)日：2010-04-01

申请号：US12630346

申请日：2009-12-03

申请人： Ryo FUJITA ,  Haruo Yoda ,  Kimiaki Ando ,  Yuji Inoue ,  Masato Muraki

发明人： Ryo FUJITA ,  Haruo Yoda ,  Kimiaki Ando ,  Yuji Inoue ,  Masato Muraki

IPC分类号： G01N23/00

CPC分类号： H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J2237/31762 ,  H01J2237/31769

摘要： High-contrast exposure is performed by use of a small dose of electron beams, a pattern is formed on a wafer with high accuracy, and high-precision inspection is performed. In pattern formation, proximity effect correction processing is performed. Moreover, exposure of electron beams is performed based on a result of filtering using an inverse characteristic of exposure characteristics of the electron beams. Furthermore, in pattern inspection, electron beams are irradiated based on a result of filtering for obtaining a peripheral region of an edge of the pattern formed.

摘要翻译： 通过使用小剂量的电子束进行高对比度曝光，以高精度在晶片上形成图案，进行高精度检查。 在图案形成中，执行邻近效应校正处理。 此外，基于使用电子束的曝光特性的逆特性的滤波结果来执行电子束的曝光。 此外，在图案检查中，基于滤波结果照射电子束，以获得形成的图案的边缘的周边区域。

公开(公告)号：US07608844B2

公开(公告)日：2009-10-27

申请号：US11136703

申请日：2005-05-25

申请人： Yuji Inoue ,  Haruo Yoda ,  Kimiaki Ando ,  Yoshikiyo Yui

发明人： Yuji Inoue ,  Haruo Yoda ,  Kimiaki Ando ,  Yoshikiyo Yui

IPC分类号： G21K5/10

CPC分类号： H01J37/3026 ,  B82Y10/00 ,  B82Y40/00 ,  G21K1/08 ,  H01J37/3174 ,  H01J2237/31762

摘要： In the present invention, vector data developing unit, ends separating unit, overlap removing unit and bitmapped data generating unit are sequentially connected in order to make pipeline processing. In addition, data of each raster is orderly arranged as a unit so that each processor can process data of each raster at a time. Each processor can make the pipeline processing to fast generate data. In addition, small-scale circuits can be used to realize the system because each raster can be processed as a unit of processing. Moreover, since data is orderly arranged before being processed, multi-valued bitmapped data can be generated in the order of drawing. Therefore, the drawing operation and data generating operation can be performed in parallel without use of any large-scale storage device.

摘要翻译： 在本发明中，为了进行流水线处理，顺序地连接矢量数据显影单元，端部分离单元，重叠移除单元和位图数据生成单元。 此外，每个光栅的数据被有序地排列成一个单元，使得每个处理器可以一次处理每个光栅的数据。 每个处理器可以使流水线处理快速生成数据。 此外，可以使用小规模电路来实现系统，因为每个光栅可以作为处理单元被处理。 此外，由于在处理之前数据被有序排列，所以可以按照绘制的顺序生成多值位图数据。 因此，绘图操作和数据生成操作可以并行执行而不使用任何大型存储设备。

公开(公告)号：US07417444B2

公开(公告)日：2008-08-26

申请号：US11269617

申请日：2005-11-09

申请人： Hiroyuki Shinada ,  Mari Nozoe ,  Haruo Yoda ,  Kimiaki Ando ,  Katsuhiro Kuroda ,  Yutaka Kaneko ,  Maki Tanaka ,  Shunji Maeda ,  Hitoshi Kubota ,  Aritoshi Sugimoto ,  Katsuya Sugiyama ,  Atsuko Takafuji ,  Yusuke Yajima ,  Hiroshi Tooyama ,  Tadao Ino ,  Takashi Hiroi ,  Kazushi Yoshimura ,  Yasutsugu Usami

发明人： Hiroyuki Shinada ,  Mari Nozoe ,  Haruo Yoda ,  Kimiaki Ando ,  Katsuhiro Kuroda ,  Yutaka Kaneko ,  Maki Tanaka ,  Shunji Maeda ,  Hitoshi Kubota ,  Aritoshi Sugimoto ,  Katsuya Sugiyama ,  Atsuko Takafuji ,  Yusuke Yajima ,  Hiroshi Tooyama ,  Tadao Ino ,  Takashi Hiroi ,  Kazushi Yoshimura ,  Yasutsugu Usami

IPC分类号： G01R31/305 ,  H01J37/28

CPC分类号： G01R31/305 ,  G01R31/307 ,  H01J37/28 ,  H01J2237/2817

摘要： A circuit pattern inspection method and an apparatus therefor, in which the whole of a portion to be inspected of a sample to be inspected is made to be in a predetermined charged state, the portion to be inspected is irradiated with an image-forming high-density electron beam while scanning the electron beam, secondary charged particles are detected at a portion irradiated with the electron beam after a predetermined period of time from an instance when the electron beam is irradiated, an image is formed on the basis of the thus detected secondary charged particle signal, and the portion to be inspected is inspected by using the thus formed image.

摘要翻译： 一种电路图案检查方法及其装置，其中待检查样品的待检查部分的整个部分被制成处于预定的充电状态，被检查的部分用图像形成高分辨率照射， 在扫描电子束时，在从电子束照射的时刻起经过规定的时间后，在照射电子束的部分检测到二次带电粒子，根据这样检测的次级 通过使用如此形成的图像来检查带电粒子信号，并检查待检查的部分。