Magnetic recording head and method for manufacturing
    1.
    发明授权
    Magnetic recording head and method for manufacturing 失效
    磁记录头及制造方法

    公开(公告)号:US07333301B2

    公开(公告)日:2008-02-19

    申请号:US10650832

    申请日:2003-08-29

    IPC分类号: G11B5/127

    摘要: A thin-film magnetic head having little temperature rise in the element, good heat dissipation and a short magnetic path length (narrow coil pitch) and manufacturing method for same is provided. To form the coil of the thin-film magnetic head, a lower coil is first formed and after forming alumina and an inorganic compound containing alumina, a trench is formed for the upper coil by reactive ion etching. The lower coil allows uniform etching at this time and functions as a film to prevent loading effects occurring during reactive ion etching. This trench is then plated in copper and chemical mechanical planarization performed to form the upper layer coil as the dual-layer coil of the present invention. Heat from the coil is efficiently radiated towards the substrate by alumina and an inorganic compound containing alumina with good heat propagation. The ratio of alumina or inorganic compound containing alumina in the lower coil can be selected by reactive ion etching so that an upper coil trench functioning as an etching stopper can be securely formed to allow forming a stable coil film thickness and a short magnetic path length.

    摘要翻译: 提供元件温度上升较小,散热好,磁路长度短(窄线圈间距)及其制造方法的薄膜磁头。 为了形成薄膜磁头的线圈,首先形成下线圈,在形成氧化铝和含有氧化铝的无机化合物之后,通过反应离子蚀刻形成用于上部线圈的沟槽。 此时,下线圈允许均匀刻蚀,起到膜的作用,以防止在反应离子蚀刻期间发生的负载效应。 然后将该沟槽镀铜并进行化学机械平面化以形成上层线圈作为本发明的双层线圈。 来自线圈的热量通过氧化铝和含有良好热传播的氧化铝的无机化合物有效地朝向基板辐射。 可以通过反应离子蚀刻来选择下层线圈中的氧化铝或含有氧化铝的无机化合物的比例,从而可以可靠地形成用作蚀刻停止层的上部线圈沟槽,以形成稳定的线圈膜厚度和短的磁路长度。

    Magnetoresistive sensor with refill film, fabrication process, and magnetic disk storage apparatus mounting magnetoresistive sensor
    2.
    发明申请
    Magnetoresistive sensor with refill film, fabrication process, and magnetic disk storage apparatus mounting magnetoresistive sensor 审中-公开
    具有补充膜的磁阻传感器,制造工艺和安装磁阻传感器的磁盘存储装置

    公开(公告)号:US20060007603A1

    公开(公告)日:2006-01-12

    申请号:US11177967

    申请日:2005-07-08

    IPC分类号: G11B5/33 G11B5/127 G11B5/147

    摘要: Embodiments of the invention provide a high-output magnetic reading head by making it easy to remove a re-deposited substance that deposits on the side wall surface in the track width direction or the side wall surface in the sensor height direction of a magneto-resistance film in a fabrication process of the magnetic reading head. In one embodiment, a refill film that is fabricated first of a refill film along track width direction or a refill film along sensor height direction is fabricated such that a layer in contact with the magneto-resistance film is formed of a material that is slow in etching rate but possible to minimize deterioration of characteristics due to thermal treatment and a layer(s) other than the layer in contact with the magneto-resistance film is formed of a material(s) that is fast in etching rate.

    摘要翻译: 本发明的实施例提供了一种高输出磁读头,其特征在于,能够容易地除去在磁阻的传感器高度方向上的轨道宽度方向或侧壁面上的侧壁面上沉积的再沉积物质 胶片在磁读头的制作过程中。 在一个实施例中,制造沿着轨道宽度方向首先由补充膜制造的补充膜,或沿着传感器高度方向的补片膜,使得与磁阻膜接触的层由缓慢的材料形成 蚀刻速率,但是可能使由于热处理引起的特性劣化最小化,并且除了与磁阻膜接触的层以外的层由蚀刻速率快的材料形成。

    CPP structure magnetoresistive head
    3.
    发明授权
    CPP structure magnetoresistive head 有权
    CPP结构磁阻头

    公开(公告)号:US08537503B2

    公开(公告)日:2013-09-17

    申请号:US12547394

    申请日:2009-08-25

    IPC分类号: G11B5/33

    摘要: According to one embodiment, a magnetoresistive head has a magnetoresistive sensor film between a lower shield layer and an upper shield layer. The magnetoresistive sensor film is formed by stacking at least a pinning layer, a first ferromagnetic layer, an intermediate layer, and a second ferromagnetic layer, in which a sense current flows so as to pass through an interface between the intermediate layer and the second ferromagnetic layer, and a resistance change of the magnetoresistive sensor film in accordance with the change of an external magnetic field is detected. Also, a lateral side metal layer having an electric resistivity lower than the electric resistivity of the pinning layer is disposed at least on a side wall of the pinning layer among side walls of layers constituting the magnetoresistive sensor film, the lateral side metal layer being in contact with the lower shield layer. Other embodiments are described as well.

    摘要翻译: 根据一个实施例,磁阻头在下屏蔽层和上屏蔽层之间具有磁阻传感器膜。 磁阻传感器膜通过堆叠至少一个感测电流流过的钉扎层,第一铁磁层,中间层和第二铁磁层形成,以便穿过中间层和第二铁磁体之间的界面 层,并且检测到根据外部磁场的变化的磁阻传感器膜的电阻变化。 此外,具有低于钉扎层的电阻率的电阻率的侧面金属层至少设置在构成磁阻传感器膜的层的侧壁中的钉扎层的侧壁上,侧面金属层位于 与下屏蔽层接触。 还描述了其它实施例。

    Magnetic head and magnetic recording/reproducing system
    7.
    发明申请
    Magnetic head and magnetic recording/reproducing system 失效
    磁头和磁记录/再现系统

    公开(公告)号:US20060109592A1

    公开(公告)日:2006-05-25

    申请号:US11322262

    申请日:2006-01-03

    IPC分类号: G11B5/33

    摘要: A high output, magnetoresistive head with a CPP structure is disclosed which reduces or prevents deformation near the air bearing surface of the read element portion layer at the time of air bearing surface processing. In the CPP structure magnetoresistive head, the deformation near the air bearing surface as a result of mechanical polishing during the air bearing surface processing can be reduced by forming deformation prevention layers having a higher shear modulus than the first ferromagnetic layer, and a second ferromagnetic layer between a magnetoresistive film and at least one of a lower shield layer and an upper shield layer.

    摘要翻译: 公开了一种具有CPP结构的高输出磁阻头,其在空气轴承表面处理时减小或防止读取元件部分层的空气支承表面附近的变形。 在CPP结构磁阻头中,通过形成具有比第一铁磁层更高的剪切模量的变形防止层,可以减少在空气轴承表面加工期间由于机械抛光而在空气轴承表面附近的变形,以及第二铁磁层 在磁阻膜和下屏蔽层和上屏蔽层中的至少一个之间。

    CPP Structure Magnetoresistive Head
    9.
    发明申请
    CPP Structure Magnetoresistive Head 有权
    CPP结构磁阻头

    公开(公告)号:US20100053821A1

    公开(公告)日:2010-03-04

    申请号:US12547394

    申请日:2009-08-25

    IPC分类号: G11B5/127

    摘要: According to one embodiment, a magnetoresistive head has a magnetoresistive sensor film between a lower shield layer and an upper shield layer. The magnetoresistive sensor film is formed by stacking at least a pinning layer, a first ferromagnetic layer, an intermediate layer, and a second ferromagnetic layer, in which a sense current flows so as to pass through an interface between the intermediate layer and the second ferromagnetic layer, and a resistance change of the magnetoresistive sensor film in accordance with the change of an external magnetic field is detected. Also, a lateral side metal layer having an electric resistivity lower than the electric resistivity of the pinning layer is disposed at least on a side wall of the pinning layer among side walls of layers constituting the magnetoresistive sensor film, the lateral side metal layer being in contact with the lower shield layer. Other embodiments are described as well.

    摘要翻译: 根据一个实施例,磁阻头在下屏蔽层和上屏蔽层之间具有磁阻传感器膜。 磁阻传感器膜通过堆叠至少一个感测电流流过的钉扎层,第一铁磁层,中间层和第二铁磁层形成,以便穿过中间层和第二铁磁体之间的界面 层,并且检测到根据外部磁场的变化的磁阻传感器膜的电阻变化。 此外,具有低于钉扎层的电阻率的电阻率的侧面金属层至少设置在构成磁阻传感器膜的层的侧壁中的钉扎层的侧壁上,侧面金属层位于 与下屏蔽层接触。 还描述了其它实施例。

    Magnetoresistive head
    10.
    发明授权
    Magnetoresistive head 有权
    磁阻头

    公开(公告)号:US07280321B2

    公开(公告)日:2007-10-09

    申请号:US11501844

    申请日:2006-08-10

    IPC分类号: G11B5/39

    摘要: A magnetoresistive head of a type including a magnetoresistive film arranged between a lower shield layer and an upper shield layer, wherein the lower shield layer has a non-magnetic layer adjacent to it and the lower shield layer and the upper shield layer are formed such that their separation at at least part of a boundary between the lower shield layer and the upper shield layer is larger than their separation in a vicinity of the magnetoresistive film, and an insulating film is arranged between the lower shield layer and the upper shield layer, wherein the lower shield layer and the non-magnetic layer adjacent thereto are formed such that they differ in height and there exists a difference in level at their boundary.

    摘要翻译: 一种包括布置在下屏蔽层和上屏蔽层之间的磁阻膜的类型的磁阻头,其中下屏蔽层具有与其相邻的非磁性层,并且形成下屏蔽层和上屏蔽层,使得 它们在下屏蔽层和上屏蔽层之间的边界的至少一部分上的分离大于其在磁阻膜附近的分离,并且绝缘膜布置在下屏蔽层和上屏蔽层之间,其中 形成下部屏蔽层和与其相邻的非磁性层,使得它们的高度不同,并且在其边界处存在水平差异。