公开(公告)号：US20240032289A1

公开(公告)日：2024-01-25

申请号：US18482070

申请日：2023-10-06

Applicant: KIOXIA CORPORATION

Inventor： Wataru SAKAMOTO

IPC: H10B41/27 ,  H01L29/10 ,  H01L21/28 ,  H10B41/10 ,  H10B41/35 ,  H10B43/10 ,  H10B43/27 ,  H10B43/35

CPC classification number: H10B41/27 ,  H01L29/1037 ,  H01L29/40114 ,  H01L29/40117 ,  H10B41/10 ,  H10B41/35 ,  H10B43/10 ,  H10B43/27 ,  H10B43/35

Abstract: According to one embodiment, a semiconductor device includes a stacked body, a columnar portion, a first charge storage portion, and a second charge storage portion. The stacked body includes a plurality of electrode layers stacked in a first direction. The plurality of electrode layers includes a first electrode layer, and a second electrode layer. The columnar portion extends in the first direction in the stacked body. The first charge storage portion provides between the first electrode layer and the columnar portion. The second charge storage portion provides between the second electrode layer and the columnar portion. A first thickness in a second direction intersecting the first direction of the first charge storage portion between the first electrode layer and the columnar portion is thicker than a second thickness in the second direction of the second charge storage portion between the second electrode layer and the columnar portion.

公开(公告)号：US20220285380A1

公开(公告)日：2022-09-08

申请号：US17827107

申请日：2022-05-27

Applicant: Kioxia Corporation

Inventor： Wataru SAKAMOTO ,  Ryota SUZUKI ,  Tatsuya OKAMOTO ,  Tatsuya KATO ,  Fumitaka ARAI

IPC: H01L27/11556 ,  G11C16/04 ,  H01L27/11582 ,  H01L29/66 ,  H01L29/792 ,  H01L23/528 ,  H01L27/11519 ,  H01L29/06

Abstract: A semiconductor memory device includes two first electrode films, a first column and a second insulating film. The two first electrode films extend in a first direction and are separated from each other in a second direction. The first column is provided between the two first electrode films and has a plurality of first members and a plurality of insulating members. Each of the first members and each of the insulating members are arranged alternately in the first direction. One of the plurality of first members has a semiconductor pillar, a second electrode film and a first insulating film provided between the semiconductor pillar and the second electrode film. The semiconductor pillar, the first insulating film and the second electrode film are arranged in the second direction. The second insulating film is provided between the first column and one of the two first electrode films.