公开(公告)号：US20050156129A1

公开(公告)日：2005-07-21

申请号：US11075057

申请日：2005-03-07

Applicant: Nadim Maluf ,  Kirt Williams ,  Bert Van Drieenhuizen ,  Edward Fuller ,  Richard Barron

Inventor： Nadim Maluf ,  Kirt Williams ,  Bert Van Drieenhuizen ,  Edward Fuller ,  Richard Barron

IPC: B60T8/36 ,  B81B3/00 ,  F15C3/00 ,  F15C5/00 ,  F16K31/00 ,  F16K31/02 ,  F16K31/18 ,  F16K99/00

CPC classification number: F15C5/00 ,  B81B3/0024 ,  F16K99/0001 ,  F16K99/0011 ,  F16K99/0013 ,  F16K99/0034 ,  F16K99/0044 ,  F16K2099/0074 ,  F16K2099/008 ,  F16K2099/0098 ,  Y10T137/0396 ,  Y10T137/2213 ,  Y10T137/2224 ,  Y10T137/8242

Abstract: The present invention provides a proportional microvalve having a first, second and third layer, and having high aspect ratio geometries. The first layer defines a cavity with inlet and outlet ports. The second layer, doped to have a low resistivity and bonded between the first and third layers, defines a cavity having a flow area to permit fluid flow between the inlet and outlet ports. The second layer further defines an actuatable displaceable member, and one or more thermal actuators for actuating the displaceable member to a position between and including an open and a closed position to permit or occlude fluid flow. The third layer provides one wall of the cavity and provides electrical contacts for electrically heating the thermally expandable actuators. The thermal actuators and the displaceable member have high aspect ratios and are formed by deep reactive ion etching such that they are displaceable in the plane of the second layer while being very stiff out of the plane. Thus, both actuation and displacement of the displaceable member are in the plane of the layer.

Abstract translation: 本发明提供具有第一层，第二层和第三层并具有高纵横比几何形状的比例微型阀。 第一层限定具有入口和出口的空腔。 掺杂为具有低电阻率并且接合在第一和第三层之间的第二层限定了具有允许流体在入口和出口之间流动的流动面积的空腔。 第二层进一步限定可致动的可移动构件，以及一个或多个热致动器，用于将可移动构件致动到打开和关闭位置之间并包括打开位置和关闭位置，以允许或阻塞流体流动。 第三层提供腔的一个壁，并提供用于电加热可热膨胀致动器的电触点。 热致动器和可移位构件具有高纵横比，并且通过深反应离子蚀刻形成，使得它们可在第二层的平面中移位，同时非常刚性地离开平面。 因此，可移动构件的致动和位移都在该层的平面内。

公开(公告)号：US20050145053A1

公开(公告)日：2005-07-07

申请号：US10752183

申请日：2004-01-07

Applicant: Qing Bai ,  Storrs Hoen ,  Jonah Harley ,  Kirt Williams

Inventor： Qing Bai ,  Storrs Hoen ,  Jonah Harley ,  Kirt Williams

IPC: B81B3/00 ,  G02B26/08 ,  F16M13/00

CPC classification number: G02B26/0841 ,  B81B3/0062 ,  B81B2201/045 ,  Y10T74/20

Abstract: A device includes first and second supports, a rotatable body and first and second flexible members. The first flexible member extends between the first support and a first position on the rotatable body. The second flexible member extends between the second support and a second position on the rotatable body. At least one of the supports is capable of linear movement in a first direction with respect to the other. The first position is offset from the second position in a second direction orthogonal to the first direction.

Abstract translation: 一种装置包括第一和第二支撑件，可旋转主体和第一和第二柔性构件。 第一柔性构件在第一支撑件和可旋转主体上的第一位置之间延伸。 第二柔性构件在第二支撑件和可旋转主体上的第二位置之间延伸。 至少一个支撑件能够相对于另一个在第一方向上线性移动。 第一位置在与第一方向正交的第二方向上偏离第二位置。

公开(公告)号：US20050062138A1

公开(公告)日：2005-03-24

申请号：US10668136

申请日：2003-09-22

Applicant: Kirt Williams

Inventor： Kirt Williams

IPC: B81B3/00 ,  H01L29/40 ,  H02N1/00

CPC classification number: H02N1/004 ,  B81B3/0018 ,  B81B2201/038

Abstract: A semiconductor structure with electrically isolated sidewall electrodes on one or more sides of the structure and a method for fabricating the structure are disclosed. The electrically isolated sidewall electrodes are composed of silicon-based conductive material, e.g., doped polysilicon, which allows the electrodes to be formed on one or more sides of the semiconductor structure by using stop-on-oxide deep reactive-ion etching (DRIE). The electrically isolated sidewall electrodes allow the semiconductor structure to generate electrostatic forces between a side surface of the semiconductor structure and a side surface of a similar semiconductor structure. Thus, the semiconductor structure may be used as a part of an electrostatic actuator in a microelectromechanical system (MEMS) device.

Abstract translation: 公开了一种在该结构的一侧或多侧上具有电隔离的侧壁电极的半导体结构以及用于制造该结构的方法。 电隔离的侧壁电极由硅基导电材料（例如掺杂多晶硅）组成，其允许通过使用停止氧化物深反应离子蚀刻（DRIE）在半导体结构的一侧或多侧上形成电极， 。 电隔离的侧壁电极允许半导体结构在半导体结构的侧表面和类似的半导体结构的侧表面之间产生静电力。 因此，半导体结构可以用作微机电系统（MEMS）装置中的静电致动器的一部分。