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1.发明授权
公开(公告)号：US5362960A
公开(公告)日：1994-11-08
申请号：US10794
申请日：1993-01-29
IPC分类号： H01L27/14 , B81B1/00 , H01L27/144 , H02M7/537 , H01J40/14
CPC分类号： H01L27/1443
摘要： A photoelectric transducer advantageously usable as an electrical energy source for driving units of work modules and sensors of a micromachine is provided. This photoelectric transducer is characterized by having a photoelectric transducing element, a self-exciting oscillating circuit, and voltage transformer and optionally further a storage mechanism formed on one substrate. It is further characterized by producing electrical power by the exposure of the photoelectric transducing element to a continuous light.
摘要翻译： 提供了有利地用作用于驱动工作模块和微机械传感器的电能源的光电传感器。 该光电传感器的特征在于具有光电转换元件，自激振荡电路和电压互感器以及可选地进一步形成在一个基板上的存储机构。 其特征在于通过将光电转换元件暴露于连续光来产生电力。
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公开(公告)号：US5397897A
公开(公告)日：1995-03-14
申请号：US047472
申请日：1993-04-19
申请人： Kiyoshi Komatsu , Takehisa Mori , Atsushi Sone , Mitsuteru Kimura
发明人： Kiyoshi Komatsu , Takehisa Mori , Atsushi Sone , Mitsuteru Kimura
CPC分类号： G01J5/04 , G01J5/045 , G01J5/20 , H01L31/095
摘要： An infrared sensor including a substrate provided with a bridging part; a detecting part composed of an infrared temperature-sensitive film formed in the bridging part; an electrode pad formed of a laminate film and an etchant-resistant electrically conductive film electrically connected to the infrared temperature-sensitive film; a first lid covering the detecting part and the bridging part; and a second lid covering another surface of the substrate and tightly closing a cavity formed between the substrate and the bridging part.
摘要翻译： 一种红外线传感器，包括：设置有桥接部的基板; 检测部，由形成在桥接部的红外线感光膜构成; 由层压膜形成的电极焊盘和与红外线感光膜电连接的耐蚀刻导电膜; 覆盖所述检测部和所述桥接部的第一盖; 以及覆盖所述基板的另一表面的第二盖，并紧密地封闭在所述基板和所述桥接部之间形成的空腔。
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公开(公告)号：US5521123A
公开(公告)日：1996-05-28
申请号：US365036
申请日：1994-12-28
申请人： Kiyoshi Komatsu , Takehisa Mori , Atsushi Sone , Mitsuteru Kimura
发明人： Kiyoshi Komatsu , Takehisa Mori , Atsushi Sone , Mitsuteru Kimura
CPC分类号： G01J5/04 , G01J5/045 , G01J5/20 , H01L31/095
摘要： The disclosed infrared sensor comprises a substrate provided with a bridging part and a sensing part made of an infrared temperature-sensitive film formed on the bridging part. A first lid member covers the sensing part and bridging part and a second lid member covers the reverse surface of the substrate and tightly seals a cavity formed between the substrate and the bridging part. The invention preferably comprises an electrode pad electrically connected to the infrared temperature sensitive film and formed of a laminate film including an etchant-resistant electrically conductive film. The invention provides an infrared sensor with a small stable bridging structure which allows easy formation of a contact hole on an electrode pad without causing a breakage of the bridging part. A method for the production of an infrared sensor is also disclosed.
摘要翻译： 所公开的红外传感器包括设置有桥接部分的基板和由形成在桥接部分上的红外温度敏感膜制成的感测部分。 第一盖构件覆盖感测部分和桥接部分，并且第二盖构件覆盖衬底的相反表面并且紧密地密封形成在衬底和桥接部件之间的空腔。 本发明优选包括与红外线感光膜电连接并由包括耐蚀刻导电膜的层叠膜形成的电极焊盘。 本发明提供了具有小稳定桥接结构的红外传感器，其允许在电极焊盘上容易地形成接触孔而不引起桥接部分的断裂。 还公开了一种生产红外传感器的方法。
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公开(公告)号：US5302933A
公开(公告)日：1994-04-12
申请号：US950085
申请日：1992-09-22
申请人： Takeshi Kudo , Takehisa Mori , Kiyoshi Komatsu
发明人： Takeshi Kudo , Takehisa Mori , Kiyoshi Komatsu
CPC分类号： H01L31/202 , G01J5/20 , H01L31/095 , G01J5/12 , Y02E10/50 , Y02P70/521
摘要： An infrared radiation sensor has a bridge portion which bridges a cave portion formed in a sensor substrate. The bridge portion includes an infrared radiation receiving portion and support portions for supporting the infrared radiation receiving portion. The plane shape of the infrared radiation receiving portion is a square or a circle which has a greater side length or a greater diameter than the width of the supporting portions to increase the amount of infrared radiation received by the infrared receiving portion.
摘要翻译： 红外线辐射传感器具有桥接形成在传感器基板中的洞穴部分的桥接部分。 桥接部分包括红外辐射接收部分和用于支撑红外辐射接收部分的支撑部分。 红外辐射接收部分的平面形状是方形或圆形，其具有比支撑部分的宽度更大的侧边长度或更大的直径，以增加由红外线接收部分接收的红外线辐射量。
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公开(公告)号：US5404125A
公开(公告)日：1995-04-04
申请号：US916192
申请日：1992-07-17
申请人： Takehisa Mori , Kiyoshi Komatsu
发明人： Takehisa Mori , Kiyoshi Komatsu
CPC分类号： H01L31/095 , G01J5/20
摘要： An infrared sensor comprising a sensor substrate formed of a semiconducting material and at least one set of infrared sensing portions formed one each on the opposite surfaces of said sensor substrate, wherein said infrared sensing portions are superposed one each on bride portions formed on cavities formed one each on the opposite surfaces of said sensor substrate.
摘要翻译： 一种红外传感器，包括由半导体材料形成的传感器基板和在所述传感器基板的相对表面上形成的至少一组红外感测部分，其中所述红外感测部分在形成在形成一个 每个在所述传感器基板的相对表面上。
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公开(公告)号：US5335498A
公开(公告)日：1994-08-09
申请号：US10788
申请日：1993-01-29
申请人： Kiyoshi Komatsu , Takehisa Mori , Masao Takinami
发明人： Kiyoshi Komatsu , Takehisa Mori , Masao Takinami
CPC分类号： F03G7/065 , B25J9/1085
摘要： A contraction-extension mechanism type actuator is provided which operates with a small and simple mechanism, offers no hindrance to other work units, adopts a construction capable of fine adjustment, and enables only the leading end of a module to be freely moved while producing virtually no motion of the module itself. These objects are accomplished by a contraction-extension mechanism type actuator which is a joint array formed of a shape-memorizing alloy and provided with a contraction-extension mechanism having shape-controlling heaters integrally attached to the component joints of the array and having the joint array itself serving as its own a drive source.
摘要翻译： 提供了一种收缩延伸机构型致动器，其以小而简单的机构操作，不会妨碍其他作业单元，采用能够进行微调的结构，并且仅使模块的前端可自由移动，同时实际生产 模块本身没有运动。 这些目的是通过收缩延伸机构型致动器实现的，该致动器是由形状记忆合金形成的联合阵列，并且具有收缩延伸机构，该收缩延伸机构具有整体连接到阵列的部件接头并具有接头的形状控制加热器 阵列本身作为自己的驱动源。
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公开(公告)号：US5362213A
公开(公告)日：1994-11-08
申请号：US10795
申请日：1993-01-29
申请人： Kiyoshi Komatsu , Takeshi Kudo , Takashi Kitamura , Ryo Tsukamoto
发明人： Kiyoshi Komatsu , Takeshi Kudo , Takashi Kitamura , Ryo Tsukamoto
CPC分类号： F04B19/006
摘要： A micro-pump having a cross-sectional area of not more than 5 mm.sup.2 and usable as a drive source for the operation of a micro-machine and as the controlled flow of a fluid and a method for the production of this micro-pump are provided. The micro-pump is characterized by comprising a comb-shaped stationary electrodes, a fluid chamber, a piston formed in the fluid chamber, comb-shaped movable electrodes formed integrally with the piston, a conductive film for imparting a grounding potential to the piston and the comb-shaped movable electrodes, and check valves and consequently having a drive source integrally formed therein.
摘要翻译： 具有不大于5mm 2的横截面积并且可用作微机操作的驱动源和作为流体的受控流动的微型泵和用于生产该微型泵的方法是： 提供。 微型泵的特征在于包括梳状固定电极，流体室，形成在流体室中的活塞，与活塞一体形成的梳形可动电极，用于向活塞施加接地电位的导电膜，以及 梳状可动电极和止回阀，因此具有一体地形成在其中的驱动源。
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公开(公告)号：US5382823A
公开(公告)日：1995-01-17
申请号：US71311
申请日：1993-06-02
申请人： Kiyoshi Komatsu , Takeshi Kudo
发明人： Kiyoshi Komatsu , Takeshi Kudo
CPC分类号： G01L9/0042
摘要： A semiconductor device includes a cavity portion formed in a supporting portion made of a semiconductor material so as to be surrounded by the supporting portion, and a silicon oxynitride film supported on one surface of the supporting portion so as to cover the cavity portion on the side of the one surface or a silicon oxynitride film supported on one surface of the supporting portion and so arranged as to form a bridged structure over the cavity portion. The composition of the silicon oxynitride film is selected in accordance with the material of the supporting portion. The former semiconductor device is produced by forming a silicon oxynitride film on one surface of a semiconductor substrate, forming an etching resistant film which has a pattern of a cavity portion, on another surface of the semiconductor substrate, and forming the cavity portion by selectively etching the semiconductor substrate using the etching resistant film as a mask until the formed cavity portion reaches said silicon oxynitride film. The latter semiconductor device is produced by the same process except that another step for patterning the silicon oxynitride film to form a bridge structure is included.
摘要翻译： 半导体器件包括形成在由半导体材料制成的支撑部分中以被支撑部分包围的空腔部分，以及支撑在支撑部分的一个表面上以便覆盖侧面上的空腔部分的氧氮化硅膜 的一个表面或氧氮化硅膜，其被支撑在支撑部分的一个表面上并且被布置成在空腔部分上形成桥接结构。 氮氧化硅膜的组成根据支撑部分的材料选择。 前半导体器件通过在半导体衬底的一个表面上形成氧氮化硅膜，在半导体衬底的另一表面上形成具有空腔部分图案的耐蚀刻膜，并通过选择性蚀刻形成空腔部分 使用耐蚀刻膜作为掩模的半导体基板，直到形成的空腔部分到达所述氮氧化硅膜。 后一种半导体器件通过相同的工艺制造，除了包括用于图案化氮氧化硅膜以形成桥结构的另一步骤。
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公开(公告)号：US08464015B2
公开(公告)日：2013-06-11
申请号：US13233358
申请日：2011-09-15
申请人： Kiyoshi Komatsu
发明人： Kiyoshi Komatsu
CPC分类号： G06F21/78 , G06F2221/2143
摘要： Predetermined information is received from an external device and when receiving the information, an area in which the data stored in the first memory shall be erased is determined corresponding to a battery residual quantity of a power supply unit of the arithmetic processing device, and a data erasing process is controlled and executed with respect to the thus-determined area.
摘要翻译： 从外部设备接收预定信息，并且当接收到信息时，根据算术处理设备的电源单元的电池剩余量确定存储在第一存储器中的数据将被擦除的区域，以及数据 相对于如此确定的区域来控制和执行擦除处理。
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公开(公告)号：US20120005417A1
公开(公告)日：2012-01-05
申请号：US13233358
申请日：2011-09-15
申请人： Kiyoshi Komatsu
发明人： Kiyoshi Komatsu
IPC分类号： G06F12/02
CPC分类号： G06F21/78 , G06F2221/2143
摘要： Predetermined information is received from an external device and when receiving the information, an area in which the data stored in the first memory shall be erased is determined corresponding to a battery residual quantity of a power supply unit of the arithmetic processing device, and a data erasing process is controlled and executed with respect to the thus-determined area.
摘要翻译： 从外部设备接收预定信息，并且当接收到信息时，根据算术处理设备的电源单元的电池剩余量确定存储在第一存储器中的数据将被擦除的区域，以及数据 相对于如此确定的区域来控制和执行擦除处理。
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