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公开(公告)号：US08643044B2
公开(公告)日：2014-02-04
申请号：US13222912
申请日：2011-08-31
申请人： Koichi Tachibana , Shigeya Kimura , Toshiki Hikosaka , Taisuke Sato , Toshiyuki Oka , Shinya Nunoue
发明人： Koichi Tachibana , Shigeya Kimura , Toshiki Hikosaka , Taisuke Sato , Toshiyuki Oka , Shinya Nunoue
IPC分类号： H01L33/00
CPC分类号： H01L33/42
摘要： According to one embodiment, a semiconductor light emitting device includes: a stacked structure body, first and second electrodes, and a pad layer. The body includes first semiconductor layer of a first conductivity type, a light emitting layer, and a second semiconductor layer of second conductivity type. The first semiconductor layer has first and second portions. The light emitting layer is provided on the second portion. The second semiconductor layer is provided on the light emitting layer. The first electrode is provided on the first portion. The second electrode is provided on the second semiconductor layer and is transmittable to light emitted from the light emitting layer. The pad layer is connected to the second electrode. A transmittance of the pad layer is lower than that of the second electrode. A sheet resistance of the second electrode increases continuously along a direction from the pad layer toward the first electrode.
摘要翻译： 根据一个实施例，半导体发光器件包括：堆叠结构体，第一和第二电极以及衬垫层。 主体包括第一导电类型的第一半导体层，发光层和第二导电类型的第二半导体层。 第一半导体层具有第一和第二部分。 发光层设置在第二部分上。 第二半导体层设置在发光层上。 第一电极设置在第一部分上。 第二电极设置在第二半导体层上，并且可透射到从发光层发射的光。 焊盘层连接到第二电极。 焊盘层的透射率低于第二电极的透射率。 第二电极的薄层电阻沿着从衬垫层向第一电极的方向连续地增加。
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公开(公告)号：US20120061713A1
公开(公告)日：2012-03-15
申请号：US13222912
申请日：2011-08-31
申请人： Koichi Tachibana , Shigeya Kimura , Toshiki Hikosaka , Taisuke Sato , Toshiyuki Oka , Shinya Nunoue
发明人： Koichi Tachibana , Shigeya Kimura , Toshiki Hikosaka , Taisuke Sato , Toshiyuki Oka , Shinya Nunoue
IPC分类号： H01L33/42
CPC分类号： H01L33/42
摘要： According to one embodiment, a semiconductor light emitting device includes: a stacked structure body, first and second electrodes, and a pad layer. The body includes first semiconductor layer of a first conductivity type, a light emitting layer, and a second semiconductor layer of second conductivity type. The first semiconductor layer has first and second portions. The light emitting layer is provided on the second portion. The second semiconductor layer is provided on the light emitting layer. The first electrode is provided on the first portion. The second electrode is provided on the second semiconductor layer and is transmittable to light emitted from the light emitting layer. The pad layer is connected to the second electrode. A transmittance of the pad layer is lower than that of the second electrode. A sheet resistance of the second electrode increases continuously along a direction from the pad layer toward the first electrode.
摘要翻译： 根据一个实施例，半导体发光器件包括：堆叠结构体，第一和第二电极以及衬垫层。 主体包括第一导电类型的第一半导体层，发光层和第二导电类型的第二半导体层。 第一半导体层具有第一和第二部分。 发光层设置在第二部分上。 第二半导体层设置在发光层上。 第一电极设置在第一部分上。 第二电极设置在第二半导体层上，并且可透射到从发光层发射的光。 焊盘层连接到第二电极。 焊盘层的透射率低于第二电极的透射率。 第二电极的薄层电阻沿着从衬垫层向第一电极的方向连续地增加。
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公开(公告)号：US20110215351A1
公开(公告)日：2011-09-08
申请号：US12875822
申请日：2010-09-03
申请人： Shigeya Kimura , Hajime Nago , Toshiyuki Oka , Koichi Tachibana , Toshiki Hikosaka , Shinya Nunoue
发明人： Shigeya Kimura , Hajime Nago , Toshiyuki Oka , Koichi Tachibana , Toshiki Hikosaka , Shinya Nunoue
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/04 , H01L33/06 , H01S5/3216 , H01S5/34333
摘要： According to one embodiment, a semiconductor light-emitting device includes an n-type semiconductor layer including a nitride semiconductor, a p-type semiconductor layer including a nitride semiconductor, a light-emitting portion and a stacked body. The light-emitting portion is provided between the n-type and p-type semiconductor layers and includes a barrier layer and a well layer. The well layer is stacked with the barrier layer. The stacked body is provided between the light-emitting portion and the n-type semiconductor layer and includes a first layer and a second layer. The second layer is stacked with the first layer. Average In composition ratio of the stacked body is higher than 0.4 times average In composition ratio of the light-emitting portion. The layer thickness tb of the barrier layer is 10 nanometers or less.
摘要翻译： 根据一个实施例，半导体发光器件包括包括氮化物半导体的n型半导体层，包括氮化物半导体的p型半导体层，发光部分和层叠体。 发光部分设置在n型和p型半导体层之间，并且包括阻挡层和阱层。 阱层与阻挡层堆叠。 所述层叠体设置在所述发光部和所述n型半导体层之间，并且包括第一层和第二层。 第二层与第一层堆叠。 平均层叠体的组成比高于发光部的平均In组成比的0.4倍。 阻挡层的层厚度tb为10纳米以下。
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公开(公告)号：US08461606B2
公开(公告)日：2013-06-11
申请号：US12875822
申请日：2010-09-03
申请人： Shigeya Kimura , Hajime Nago , Toshiyuki Oka , Koichi Tachibana , Toshiki Hikosaka , Shinya Nunoue
发明人： Shigeya Kimura , Hajime Nago , Toshiyuki Oka , Koichi Tachibana , Toshiki Hikosaka , Shinya Nunoue
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/04 , H01L33/06 , H01S5/3216 , H01S5/34333
摘要： According to one embodiment, a semiconductor light-emitting device includes an n-type semiconductor layer including a nitride semiconductor, a p-type semiconductor layer including a nitride semiconductor, a light-emitting portion and a stacked body. The light-emitting portion is provided between the n-type and p-type semiconductor layers and includes a barrier layer and a well layer. The well layer is stacked with the barrier layer. The stacked body is provided between the light-emitting portion and the n-type semiconductor layer and includes a first layer and a second layer. The second layer is stacked with the first layer. Average In composition ratio of the stacked body is higher than 0.4 times average In composition ratio of the light-emitting portion. The layer thickness tb of the barrier layer is 10 nanometers or less.
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公开(公告)号：US08525195B2
公开(公告)日：2013-09-03
申请号：US12873662
申请日：2010-09-01
IPC分类号： H01L33/02
CPC分类号： H01L33/12 , B82Y20/00 , H01L33/04 , H01L33/32 , H01S5/34333
摘要： According to one embodiment, a semiconductor light emitting device includes n-type and p-type semiconductor layers, a light emitting portion, a multilayered structural body, and an n-side intermediate layer. The light emitting portion is provided between the semiconductor layers. The light emitting portion includes barrier layers containing GaN, and a well layer provided between the barrier layers. The well layer contains Inx1Ga1-x1N. The body is provided between the n-type semiconductor layer and the light emitting portion. The body includes: first layers containing GaN, and a second layer provided between the first layers. The second layer contains Inx2Ga1-x2N. Second In composition ratio x2 is not less than 0.6 times of first In composition ratio x1 and is lower than the first In composition x1. The intermediate layer is provided between the body and the light emitting portion and includes a third layer containing Aly1Ga1-y1N (0
摘要翻译： 根据一个实施例，半导体发光器件包括n型和p型半导体层，发光部分，多层结构体和n侧中间层。 发光部分设置在半导体层之间。 发光部分包括含有GaN的阻挡层，以及设置在阻挡层之间的阱层。 阱层包含Inx1Ga1-x1N。 本体设置在n型半导体层和发光部之间。 主体包括：包含GaN的第一层，以及设置在第一层之间的第二层。 第二层包含Inx2Ga1-x2N。 第二组成比x2不小于第一In组成比x1的0.6倍，并且低于第一In组成x1。 中间层设置在主体和发光部分之间，并且包括含有Aly1Ga1-y1N（0
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公开(公告)号：US08674338B2
公开(公告)日：2014-03-18
申请号：US12871285
申请日：2010-08-30
CPC分类号： H01L33/06 , H01L33/32 , H01L33/325
摘要： According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting portion. The light emitting portion is provided between the semiconductor layers and includes barrier layers and well layers alternately stacked. An n-side end well layer which is closest to the n-type semiconductor layer contains InwnGa1-wnN and has a layer thickness twn. An n-side end barrier layer which is closest to the n-type semiconductor layer contains InbnGa1-bnN and has a layer thickness tbn. A p-side end well layer which is closest to the p-type semiconductor layer contains InwpGa1-wpN and has a layer thickness twp. A p-side end barrier layer which is closest to the p-type semiconductor contains InbpGa1-bpN and has a layer thickness tbp. A value of (wp×twp+bp×tbp)/(twp+tbp) is higher than (wn×twn+bn×tbn)/(twn+tbn) and is not higher than 5 times (wn×twn+bn×tbn)/(twn+tbn).
摘要翻译： 根据一个实施例，半导体发光器件包括n型半导体层，p型半导体层和发光部分。 发光部分设置在半导体层之间，并且包括交替堆叠的势垒层和阱层。 最靠近n型半导体层的n侧端阱层包含InwnGa1-wnN并具有层厚度twn。 最靠近n型半导体层的n侧端势垒层包含InbnGa1-bnN并具有层厚度tbn。 最靠近p型半导体层的p侧端阱层包含InwpGa1-wpN，并具有层厚度twp。 最靠近p型半导体的p侧端势垒层包含InbpGa1-bpN，并具有层厚度tbp。 （wp×twp + bp×tbp）/（twp + tbp）的值高于（wn×twn + bn×tbn）/（twn + tbn），并且不高于5次（wn×twn + bn× tbn）/（twn + tbn）。
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公开(公告)号：US08525203B2
公开(公告)日：2013-09-03
申请号：US12874510
申请日：2010-09-02
IPC分类号： H01L33/00
CPC分类号： H01L33/145 , B82Y20/00 , H01L33/06 , H01L33/32 , H01S5/34333
摘要： According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, a light emitting portion, a first layer, a second layer, and an intermediate layer. The semiconductor layers include nitride semiconductor. The light emitting portion is provided between the n-type semiconductor layer and the p-type semiconductor layer and includes a quantum well layer. The first layer is provided between the light emitting portion and the p-type semiconductor layer and includes AlX1Ga1-x1N having first Al composition ratio x1. The second layer is provided between the first layer and the p-type semiconductor layer and includes Alx2Ga1-x2N having second Al composition ratio x2 higher than the first Al composition ratio x1. The intermediate layer is provided between the first layer and the light emitting portion and has a thickness not smaller than 3 nanometers and not larger than 8 nanometers and includes Inz1Ga1-z1N (0≦z1
摘要翻译： 根据一个实施例，半导体发光器件包括n型半导体层，p型半导体层，发光部分，第一层，第二层和中间层。 半导体层包括氮化物半导体。 发光部分设置在n型半导体层和p型半导体层之间，并且包括量子阱层。 第一层设置在发光部和p型半导体层之间，并且包括具有第一Al组成比x1的AlX1Ga1-x1N。 第二层设置在第一层和p型半导体层之间，并且包括具有比第一Al组成比x1高的第二Al组成比x2的Al x2 Ga1-x2N。 中间层设置在第一层和发光部之间，并且具有不小于3纳米且不大于8纳米的厚度，并且包括Inz1Ga1-z1N（0 @ z1 <1）。
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公开(公告)号：US20120049155A1
公开(公告)日：2012-03-01
申请号：US13030440
申请日：2011-02-18
IPC分类号： H01L33/04
摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a second semiconductor layer, a light emitting part, and a multilayered structural body. The light emitting part is provided between the first and second semiconductor layers and includes barrier layers and well layers alternately stacked. The multilayered structural body is provided between the first semiconductor layer and the light emitting part and includes high energy layers and low energy layers alternately stacked. An average In composition ratio on a side of the second semiconductor is higher than that on a side of the first semiconductor in the multilayered structural body. An average In composition ratio on a side of the second semiconductor is higher than that on a side of the first semiconductor in the light emitting part.
摘要翻译： 根据一个实施例，半导体发光器件包括第一半导体层，第二半导体层，发光部分和多层结构体。 发光部分设置在第一和第二半导体层之间，并且包括交替层叠的势垒层和阱层。 多层结构体设置在第一半导体层和发光部之间，并且包含交替堆叠的高能层和低能层。 第二半导体侧的平均In组成比高于多层结构体中的第一半导体侧的平均In组成比。 第二半导体侧的平均In组成比高于发光部中的第一半导体侧的平均In组成比。
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公开(公告)号：US20110198633A1
公开(公告)日：2011-08-18
申请号：US12871285
申请日：2010-08-30
IPC分类号： H01L33/34
CPC分类号： H01L33/06 , H01L33/32 , H01L33/325
摘要： According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting portion. The light emitting portion is provided between the semiconductor layers and includes barrier layers and well layers alternately stacked. An n-side end well layer which is closest to the n-type semiconductor layer contains InwnGa1-wnN and has a layer thickness twn. An n-side end barrier layer which is closest to the n-type semiconductor layer contains InbnGa1-bnN and has a layer thickness tbn. A p-side end well layer which is closest to the p-type semiconductor layer contains InwpGa1-wpN and has a layer thickness twp. A p-side end barrier layer which is closest to the p-type semiconductor contains InbpGa1-bpN and has a layer thickness tbp. A value of (wp×twp+bp×tbp)/(twp+tbp) is higher than (wn×twn+bn×tbn)/(twn+tbn) and is not higher than 5 times (wn×twn+bn×tbn)/(twn+tbn).
摘要翻译： 根据一个实施例，半导体发光器件包括n型半导体层，p型半导体层和发光部分。 发光部分设置在半导体层之间，并且包括交替堆叠的势垒层和阱层。 最靠近n型半导体层的n侧端阱层包含InwnGa1-wnN并具有层厚度twn。 最靠近n型半导体层的n侧端势垒层包含InbnGa1-bnN并具有层厚度tbn。 最靠近p型半导体层的p侧端阱层包含InwpGa1-wpN，并具有层厚度twp。 最靠近p型半导体的p侧端势垒层包含InbpGa1-bpN，并具有层厚度tbp。 （wp×twp + bp×tbp）/（twp + tbp）的值高于（wn×twn + bn×tbn）/（twn + tbn），并且不高于5次（wn×twn + bn× tbn）/（twn + tbn）。
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公开(公告)号：US20110198583A1
公开(公告)日：2011-08-18
申请号：US12873662
申请日：2010-09-01
CPC分类号： H01L33/12 , B82Y20/00 , H01L33/04 , H01L33/32 , H01S5/34333
摘要： According to one embodiment, a semiconductor light emitting device includes n-type and p-type semiconductor layers, a light emitting portion, a multilayered structural body, and an n-side intermediate layer. The light emitting portion is provided between the semiconductor layers. The light emitting portion includes barrier layers containing GaN, and a well layer provided between the barrier layers. The well layer contains Inx1Ga1-x1N. The body is provided between the n-type semiconductor layer and the light emitting portion. The body includes: first layers containing GaN, and a second layer provided between the first layers. The second layer contains Inx2Ga1-x2N. Second In composition ratio x2 is not less than 0.6 times of first In composition ratio x1 and is lower than the first In composition x1. The intermediate layer is provided between the body and the light emitting portion and includes a third layer containing Aly1Ga1-y1N (0
摘要翻译： 根据一个实施例，半导体发光器件包括n型和p型半导体层，发光部分，多层结构体和n侧中间层。 发光部分设置在半导体层之间。 发光部分包括含有GaN的阻挡层，以及设置在阻挡层之间的阱层。 阱层包含Inx1Ga1-x1N。 本体设置在n型半导体层和发光部之间。 主体包括：包含GaN的第一层，以及设置在第一层之间的第二层。 第二层包含Inx2Ga1-x2N。 第二组成比x2不小于第一In组成比x1的0.6倍，并且低于第一In组成x1。 中间层设置在主体和发光部分之间，并且包括含有Aly1Ga1-y1N（0
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